Valentini M, Sagi O, Baghumyan L, et al. Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium. Nature Communications. 2024;15. doi:10.1038/s41467-023-44114-0

Shimura Y, Godfrin C, Hikavyy A, et al. Compressively strained epitaxial Ge layers for quantum computing applications. Materials Science in Semiconductor Processing. 2024;174(5). doi:10.1016/j.mssp.2024.108231

Seoane Souto R, Leijnse M, Schrade C, Valentini M, Katsaros G, Danon J. Tuning the Josephson diode response with an ac current. Physical Review Research. 2024;6(2). doi:10.1103/PhysRevResearch.6.L022002

Valentini M, Sagi O, Baghumyan L, et al. Radio frequency driven superconducting diode and parity conserving  Cooper pair transport in a two-dimensional germanium hole gas. arXiv. doi:10.48550/arXiv.2306.07109

Jirovec D, Mutter PM, Hofmann AC, et al. Dynamics of hole singlet-triplet qubits with large g-factor differences. Physical Review Letters. 2022;128(12). doi:10.1103/PhysRevLett.128.126803

Valentini M, Borovkov M, Prada E, et al. Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks. Nature. 2022;612(7940):442-447. doi:10.1038/s41586-022-05382-w

Gao F, Zhang JY, Wang JH, et al. Ge/Si quantum wires for quantum computing. In: 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. IEEE; 2021. doi:10.1109/EDTM50988.2021.9420817

Katsaros G. Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium. 2021. doi:10.15479/AT:ISTA:9291

Valentini M, Peñaranda F, Hofmann AC, et al. Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states. Science. 2021;373(6550). doi:10.1126/science.abf1513

Aggarwal K, Hofmann AC, Jirovec D, et al. Enhancement of proximity-induced superconductivity in a planar Ge hole gas. Physical Review Research. 2021;3(2). doi:10.1103/physrevresearch.3.l022005

Scappucci G, Kloeffel C, Zwanenburg FA, et al. The germanium quantum information route. Nature Reviews Materials. 2021;6:926–943. doi:10.1038/s41578-020-00262-z

Jirovec D, Hofmann AC, Ballabio A, et al. A singlet triplet hole spin qubit in planar Ge. Nature Materials. 2021;20(8):1106–1112. doi:10.1038/s41563-021-01022-2

Severin B, Lennon DT, Camenzind LC, et al. Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. arXiv. doi:10.48550/arXiv.2107.12975

Katsaros G. Enhancement of proximity induced superconductivity in planar Germanium. 2020. doi:10.15479/AT:ISTA:8834

Gao F, Wang J-H, Watzinger H, et al. Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. Advanced Materials. 2020;32(16). doi:10.1002/adma.201906523

Katsaros G. Transport data for: Sitecontrolled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling. 2020. doi:10.15479/AT:ISTA:9222

Katsaros G, Kukucka J, Vukusi L, et al. Zero field splitting of heavy-hole states in quantum dots. Nano Letters. 2020;20(7):5201-5206. doi:10.1021/acs.nanolett.0c01466

Katsaros G. Supplementary data for “Zero field splitting of heavy-hole states in quantum dots.”10.15479/AT:ISTA:7689__2020. doi:10.15479/AT:ISTA:7689

Aggarwal K, Hofmann AC, Jirovec D, et al. Enhancement of proximity induced superconductivity in planar Germanium. arXiv.

Hofmann AC, Jirovec D, Borovkov M, et al. Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits. arXiv. doi:10.48550/arXiv.1910.05841

Watzinger H, Kukucka J, Vukusi L, et al. A germanium hole spin qubit. Nature Communications. 2018;9(3902). doi:10.1038/s41467-018-06418-4

Vukusi L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. Single-shot readout of hole spins in Ge. Nano Letters. 2018;18(11):7141-7145. doi:10.1021/acs.nanolett.8b03217

Vukusi L, Kukucka J, Watzinger H, Katsaros G. Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. Nano Letters. 2017;17(9):5706-5710. doi:10.1021/acs.nanolett.7b02627

Watzinger H, Kloeffel C, Vukusi L, et al. Heavy-hole states in germanium hut wires. Nano Letters. 2016;16(11):6879-6885. doi:10.1021/acs.nanolett.6b02715

Mongillo M, Spathis P, Katsaros G, et al. PtSi clustering in silicon probed by transport spectroscopy. Physical Review X. 2014;3(4). doi:10.1103/PhysRevX.3.041025

Ares N, Katsaros G, Golovach V, et al. SiGe quantum dots for fast hole spin Rabi oscillations. Applied Physics Letters. 2013;103(26). doi:10.1063/1.4858959

Ares N, Golovach V, Katsaros G, et al. Nature of tunable hole g factors in quantum dots. Physical Review Letters. 2013;110(4). doi:10.1103/PhysRevLett.110.046602

Zhang J, Katsaros G, Montalenti F, et al. Monolithic growth of ultrathin Ge nanowires on Si(001) . Physical Review Letters. 2012;109(8). doi:10.1103/PhysRevLett.109.085502

Lee E, Jiang X, Aguado R, Katsaros G, Lieber C, De Franceschi S. Zero-bias anomaly in a nanowire quantum dot coupled to superconductors. Physical Review Letters. 2012;109(18). doi:10.1103/PhysRevLett.109.186802

Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. Multifunctional devices and logic gates with undoped silicon nanowires. Nano Letters. 2012;12(6):3074-3079. doi:10.1021/nl300930m

Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. Joule-assisted silicidation for short-channel silicon nanowire devices. ACS Nano. 2011;5(9):7117-7123. doi:10.1021/nn202524j

Katsaros G, Golovach V, Spathis P, et al. Observation of spin-selective tunneling in sige nanocrystals. Physical Review Letters. 2011;107(24). doi:10.1103/PhysRevLett.107.246601

Katsaros G, Spathis P, Stoffel M, et al. Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology. 2010;5(6):458-464. doi:10.1038/nnano.2010.84

Songmuang R, Katsaros G, Monroy E, et al. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 2010;10(9):3545-3550. doi:10.1021/nl1017578

Katsaros G, Tersoff J, Stoffel M, et al. Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters. 2008;101(9). doi:10.1103/PhysRevLett.101.096103

Rastelli A, Stoffel M, Malachias Â, et al. Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters. 2008;8(5):1404-1409. doi:10.1021/nl080290y

Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. 2007;91(1). doi:10.1063/1.2752730

Katsaros G, Rastelli A, Stoffel M, et al. Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science. 2006;600(12):2608-2613. doi:10.1016/j.susc.2006.04.027

Rastelli A, Stoffel M, Katsaros G, et al. Reading the footprints of strained islands. Microelectronics Journal. 2006;37(12):1471-1476. doi:10.1016/j.mejo.2006.05.029

Costantini G, Rastelli A, Manzano C, et al. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. 2006;96(22). doi:10.1103/PhysRevLett.96.226106

Katsaros G, Rastelli A, Stoffel M, et al. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 2006;89(25). doi:10.1063/1.2405876

Katsaros G, Costantini G, Stoffel M, et al. Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. 2005;72(19). doi:10.1103/PhysRevB.72.195320

Costantini G, Rastelli A, Manzano C, et al. Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 2005;278(1-4):38-45. doi:10.1016/j.jcrysgro.2004.12.047

Zhong Z, Katsaros G, Stoffel M, et al. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. 2005;87(26):1-3. doi:10.1063/1.2150278

Katsaros G, Darwazeh I, Lane P. Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. 2005;152(6):344-352. doi:10.1049/ip-opt:20045067

Denker U, Rastelli A, Stoffel M, et al. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 2005;94(21). doi:10.1103/PhysRevLett.94.216103

Falaras P, Chryssou K, Stergiopoulos T, et al. Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes. In: Vol 4801. SPIE; 2002:125-135. doi:10.1117/12.452446

Stergiopoulos T, Arabatzis I, Katsaros G, Falaras P. Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells. Nano Letters. 2002;2(11):1259-1261. doi:10.1021/nl025798u

Katsaros G, Stergiopoulos T, Arabatzis I, Papadokostaki K, Falaras P. A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells. Journal of Photochemistry and Photobiology A: Chemistry. 2002;149(1-3):191-198. doi:10.1016/S1010-6030(02)00027-8

Katsaros G, Lane P, Murphy M. Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems. In: Proceedings of the 2000 IEEE Annual Meeting Conference . Vol 1. IEEE; 2000:27-28. doi:10.1109/LEOS.2000.890656