[{"OA_type":"green","scopus_import":"1","_id":"22619","volume":129,"author":[{"first_name":"Maksim","last_name":"Borovkov","full_name":"Borovkov, Maksim","id":"1fd0975f-8b61-11ed-b69e-d149334f28c5"},{"id":"fe39122d-06bb-11ec-a33b-9e22b40e40a5","full_name":"Schell, Yona A","last_name":"Schell","first_name":"Yona A"},{"full_name":"Sokolova, Dina","id":"2d2d62f8-72f0-11ef-b75a-8ec3e8a60032","first_name":"Dina","last_name":"Sokolova"},{"last_name":"Roux","first_name":"Kevin Etienne Robert","id":"53f93ea2-803f-11ed-ab7e-b283135794ef","full_name":"Roux, Kevin Etienne Robert"},{"first_name":"Paul","last_name":"Falthansl-Scheinecker","full_name":"Falthansl-Scheinecker, Paul","id":"85b43b21-15b2-11ec-abd3-e2c252cc2285"},{"full_name":"Fabris, Giorgio","id":"298cf6f3-1ff6-11ee-9fa6-d94cfa0b3352","first_name":"Giorgio","last_name":"Fabris"},{"full_name":"Shah, Devashish C","orcid":"0009-0007-5829-7707","id":"de191434-4e7e-11ef-bf4b-9a056fc19fc3","first_name":"Devashish C","last_name":"Shah"},{"last_name":"Saez Mollejo","first_name":"Jaime","id":"e0390f72-f6e0-11ea-865d-862393336714","full_name":"Saez Mollejo, Jaime"},{"first_name":"Rodolfo","last_name":"Previdi","full_name":"Previdi, Rodolfo","id":"bc4ea1dc-00ce-11ec-8a4e-b325ca8b9876"},{"last_name":"Taha","first_name":"Inas","full_name":"Taha, Inas"},{"last_name":"Genç","first_name":"Aziz","full_name":"Genç, Aziz"},{"last_name":"Arbiol","first_name":"Jordi","full_name":"Arbiol, Jordi"},{"full_name":"Calcaterra, Stefano","first_name":"Stefano","last_name":"Calcaterra"},{"first_name":"Afonso De Cerdeira","last_name":"Oliveira","full_name":"Oliveira, Afonso De Cerdeira"},{"first_name":"Daniel","last_name":"Chrastina","full_name":"Chrastina, Daniel"},{"first_name":"Giovanni","last_name":"Isella","full_name":"Isella, Giovanni"},{"first_name":"Anton","last_name":"Bubis","full_name":"Bubis, Anton","id":"1f6212b5-f795-11ec-9c0c-de4780302890"},{"first_name":"Georgios","last_name":"Katsaros","orcid":"0000-0001-8342-202X","full_name":"Katsaros, Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"}],"date_updated":"2026-08-03T11:08:39Z","article_processing_charge":"No","title":"Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting devices","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","related_material":{"record":[{"id":"22242","relation":"research_data","status":"public"}]},"external_id":{"arxiv":["2602.21363"]},"month":"07","publication":"Applied Physics Letters","doi":"10.1063/5.0333142","status":"public","quality_controlled":"1","article_type":"original","date_published":"2026-07-20T00:00:00Z","researchdata_availability":"yes","department":[{"_id":"GeKa"},{"_id":"GradSch"},{"_id":"NanoFab"}],"acknowledgement":"We sincerely thank Nick van Loo, Greg Mazur, Dhananjay Joshi, and Srijit Goswami for their inputs on low-temperature HfOx deposition; Matias Urdampilleta and Daniel Jirovec for discussions; and Kristen Léonard for the careful reading of the manuscript. This research was supported by the Scientific Service Units of ISTA through resources provided by the Miba Machine Shop and the Nanofabrication facility. The authors acknowledge support from the NOMIS Foundation; the European Innovation Council Pathfinder Grant No. 101115315 (QuKiT); the FWF Projects with DOI:10.55776/F86, DOI:10.55776/PAT7682124, and DOI:10.55776/P36507; and the HE-MSCA-PF project with DOI:10.3030/101150858. ICN2 is supported by the Severo Ochoa Program from Spanish MCIN/AEI (Grant No.: CEX2021-001214-S) and is funded by the CERCA Program/Generalitat de Catalunya. ICN2 acknowledges funding from Generalitat de Catalunya (No. 2021SGR00457). We acknowledge support from the CSIC Interdisciplinary Thematic Platform (PTI+) on Quantum Technologies (PTI-QTEP+).","citation":{"mla":"Borovkov, Maksim, et al. “Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting–Superconducting Devices.” <i>Applied Physics Letters</i>, vol. 129, no. 3, 033505, AIP Publishing, 2026, doi:<a href=\"https://doi.org/10.1063/5.0333142\">10.1063/5.0333142</a>.","ama":"Borovkov M, Schell YA, Sokolova D, et al. Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting devices. <i>Applied Physics Letters</i>. 2026;129(3). doi:<a href=\"https://doi.org/10.1063/5.0333142\">10.1063/5.0333142</a>","short":"M. Borovkov, Y.A. Schell, D. Sokolova, K.E.R. Roux, P. Falthansl-Scheinecker, G. Fabris, D.C. Shah, J. Saez Mollejo, R. Previdi, I. Taha, A. Genç, J. Arbiol, S. Calcaterra, A.D.C. Oliveira, D. Chrastina, G. Isella, A. Bubis, G. Katsaros, Applied Physics Letters 129 (2026).","chicago":"Borovkov, Maksim, Yona A Schell, Dina Sokolova, Kevin Etienne Robert Roux, Paul Falthansl-Scheinecker, Giorgio Fabris, Devashish C Shah, et al. “Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting–Superconducting Devices.” <i>Applied Physics Letters</i>. AIP Publishing, 2026. <a href=\"https://doi.org/10.1063/5.0333142\">https://doi.org/10.1063/5.0333142</a>.","apa":"Borovkov, M., Schell, Y. A., Sokolova, D., Roux, K. E. R., Falthansl-Scheinecker, P., Fabris, G., … Katsaros, G. (2026). Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting devices. <i>Applied Physics Letters</i>. AIP Publishing. <a href=\"https://doi.org/10.1063/5.0333142\">https://doi.org/10.1063/5.0333142</a>","ista":"Borovkov M, Schell YA, Sokolova D, Roux KER, Falthansl-Scheinecker P, Fabris G, Shah DC, Saez Mollejo J, Previdi R, Taha I, Genç A, Arbiol J, Calcaterra S, Oliveira ADC, Chrastina D, Isella G, Bubis A, Katsaros G. 2026. Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting devices. Applied Physics Letters. 129(3), 033505.","ieee":"M. Borovkov <i>et al.</i>, “Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting devices,” <i>Applied Physics Letters</i>, vol. 129, no. 3. AIP Publishing, 2026."},"publication_status":"published","project":[{"grant_number":"101115315","name":"Quantum bits with Kitaev Transmons","_id":"bdc2ca30-d553-11ed-ba76-cf164a5bb811"},{"grant_number":"F8606","name":"Center for Correlated Quantum Materials and Solid State Quantum Systems: Conventional  and unconventional topological superconductors","_id":"34a66131-11ca-11ed-8bc3-a31681c6b03e"},{"_id":"5b9e579c-ab3d-11f0-914f-88754c5b5a3f","name":"Superconducting spin qubits in planar Ge","grant_number":"PAT 7682124"},{"grant_number":"P36507","name":"Merging spin and superconducting qubits in planar Ge","_id":"bd8bd29e-d553-11ed-ba76-f0070d4b237a"},{"grant_number":"101150858","name":"Realization and Manipulation of a Planar hybrid superconducting Andreev spin qubit in Germanium","_id":"8ea8abf7-16d5-11f0-9cad-c41e56ec8bb3"}],"dataavailabilitystatement":"The data that support the findings of this study are openly available in Institute of Science and Technology repository at http://doi.org/10.15479/AT-ISTA-22242, Ref. 50.","main_file_link":[{"open_access":"1","url":"https://doi.org/10.48550/arXiv.2602.21363"}],"issue":"3","date_created":"2026-08-02T22:01:53Z","oa_version":"Preprint","arxiv":1,"type":"journal_article","intvolume":"       129","fulldoi":"https://doi.org/10.1063/5.0333142","oa":1,"publication_identifier":{"issn":["0003-6951"],"eissn":["1077-3118"]},"year":"2026","corr_author":"1","day":"20","acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"abstract":[{"text":"Planar germanium is currently the only semiconducting platform where high-coherence spin qubits and proximity-induced superconductivity have each been demonstrated. Recent research into spin qubits in Ge/SiGe heterostructures has focused on increasing the thickness of the SiGe capping layer, reporting improvements in the electrostatic noise levels. Meanwhile, heterostructures with thinner capping layers remain rather unexplored, despite the potential advantages for proximity-induced superconductivity. Here, we study a Ge/SiGe heterostructure with a thin SiGe cap d - 4nm and investigate its viability to host low-noise quantum dots. To keep the thermal budget compatible with superconducting layers, low-temperature oxide deposition processes were developed and implemented for the gate dielectrics. The charge noise level of the fabricated devices is estimated to be 1.8  +- 1.0 μeV/ square HZ⁠, comparable to devices fabricated on shallow heterostructures (⁠ d - 20nm⁠) with high-temperature deposited oxides. Low charge noise levels, together with the straightforward integration of superconductors, make this heterostructure an attractive platform for prototyping hybrid semiconducting–superconducting devices.","lang":"eng"}],"article_number":"033505","OA_place":"repository","das_tickbox":"1","language":[{"iso":"eng"}],"publisher":"AIP Publishing","supplementarymaterial":"yes"},{"quality_controlled":"1","status":"public","doi":"10.1063/5.0290636","publication":"Applied Physics Letters","month":"12","department":[{"_id":"JoFi"}],"date_published":"2025-12-22T00:00:00Z","article_type":"original","author":[{"full_name":"Patel, Lipi","last_name":"Patel","first_name":"Lipi"},{"orcid":"0000-0002-1965-4309","full_name":"Hawaldar, Samarth","id":"221708e1-1ff6-11ee-9fa6-85146607433e","first_name":"Samarth","last_name":"Hawaldar"},{"first_name":"Aditya","last_name":"Panikkar","full_name":"Panikkar, Aditya"},{"full_name":"Shankar, Athreya","last_name":"Shankar","first_name":"Athreya"},{"full_name":"Suri, Baladitya","last_name":"Suri","first_name":"Baladitya"}],"volume":127,"scopus_import":"1","_id":"20976","OA_type":"green","external_id":{"arxiv":["2507.09298"]},"user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","article_processing_charge":"No","title":"Impedance-engineered Josephson parametric amplifier with single-step lithography","date_updated":"2026-01-12T09:57:53Z","day":"22","year":"2025","publication_identifier":{"issn":["0003-6951"],"eissn":["1077-3118"]},"publisher":"AIP Publishing","language":[{"iso":"eng"}],"OA_place":"repository","abstract":[{"text":"We present an experimental demonstration of an impedance-engineered Josephson parametric amplifier (IEJPA) fabricated in a single-step lithography process. Impedance-engineering is implemented using a lumped-element series LC circuit. We use a simpler lithography process where the entire device—impedance transformer and Josephson parametric amplifier (JPA)—is patterned in a single electron beam lithography step, followed by a double-angle Dolan-bridge technique for Al–AlOx–Al deposition. We observe amplification with 18 dB gain over a wide 400 MHz bandwidth centered around 5.3 GHz with added noise approaching the quantum limit, and a saturation power of −114 dBm. To accurately explain our experimental results, we extend existing theories for IEJPAs to incorporate the full sine nonlinearity of both the JPA and the transformer. Our work provides a route to simpler realization of broadband JPAs and a theoretical foundation for a regime of JPA operation that has been less explored in literature.","lang":"eng"}],"article_number":"254001","main_file_link":[{"open_access":"1","url":"https://doi.org/10.48550/arXiv.2507.09298"}],"publication_status":"published","citation":{"short":"L. Patel, S. Hawaldar, A. Panikkar, A. Shankar, B. Suri, Applied Physics Letters 127 (2025).","chicago":"Patel, Lipi, Samarth Hawaldar, Aditya Panikkar, Athreya Shankar, and Baladitya Suri. “Impedance-Engineered Josephson Parametric Amplifier with Single-Step Lithography.” <i>Applied Physics Letters</i>. AIP Publishing, 2025. <a href=\"https://doi.org/10.1063/5.0290636\">https://doi.org/10.1063/5.0290636</a>.","mla":"Patel, Lipi, et al. “Impedance-Engineered Josephson Parametric Amplifier with Single-Step Lithography.” <i>Applied Physics Letters</i>, vol. 127, no. 25, 254001, AIP Publishing, 2025, doi:<a href=\"https://doi.org/10.1063/5.0290636\">10.1063/5.0290636</a>.","ama":"Patel L, Hawaldar S, Panikkar A, Shankar A, Suri B. Impedance-engineered Josephson parametric amplifier with single-step lithography. <i>Applied Physics Letters</i>. 2025;127(25). doi:<a href=\"https://doi.org/10.1063/5.0290636\">10.1063/5.0290636</a>","ieee":"L. Patel, S. Hawaldar, A. Panikkar, A. Shankar, and B. Suri, “Impedance-engineered Josephson parametric amplifier with single-step lithography,” <i>Applied Physics Letters</i>, vol. 127, no. 25. AIP Publishing, 2025.","ista":"Patel L, Hawaldar S, Panikkar A, Shankar A, Suri B. 2025. Impedance-engineered Josephson parametric amplifier with single-step lithography. Applied Physics Letters. 127(25), 254001.","apa":"Patel, L., Hawaldar, S., Panikkar, A., Shankar, A., &#38; Suri, B. (2025). Impedance-engineered Josephson parametric amplifier with single-step lithography. <i>Applied Physics Letters</i>. AIP Publishing. <a href=\"https://doi.org/10.1063/5.0290636\">https://doi.org/10.1063/5.0290636</a>"},"acknowledgement":"The authors acknowledge receiving support from the Space Technology Cell at IISc and ISRO through the project STC-0444(2022) and the Ministry of Electronics and Information Technology of the Government of India, under the centre of Excellence of Quantum Technology at the Indian Institute of Science, as well as the office of Principle Scientific Advisor, Government of India. S.H. and A.P. acknowledge the support of the Kishore Vaigyanik Protsahan Yojana (KVPY). A.S. acknowledges the support of a New Faculty Initiation Grant (NFIG) from IIT Madras.","oa":1,"fulldoi":"https://doi.org/10.1063/5.0290636","intvolume":"       127","arxiv":1,"type":"journal_article","oa_version":"Preprint","issue":"25","date_created":"2026-01-11T23:01:34Z"},{"issue":"4","date_created":"2026-03-30T12:22:47Z","arxiv":1,"type":"journal_article","oa_version":"Published Version","oa":1,"fulldoi":"https://doi.org/10.1063/5.0035419","intvolume":"       118","publication_status":"published","citation":{"ieee":"Z. Lin, C. Roques-Carmes, R. E. Christiansen, M. Soljačić, and S. G. Johnson, “Computational inverse design for ultra-compact single-piece metalenses free of chromatic and angular aberration,” <i>Applied Physics Letters</i>, vol. 118, no. 4. AIP Publishing, 2021.","ista":"Lin Z, Roques-Carmes C, Christiansen RE, Soljačić M, Johnson SG. 2021. Computational inverse design for ultra-compact single-piece metalenses free of chromatic and angular aberration. Applied Physics Letters. 118(4), 041104.","apa":"Lin, Z., Roques-Carmes, C., Christiansen, R. E., Soljačić, M., &#38; Johnson, S. G. (2021). Computational inverse design for ultra-compact single-piece metalenses free of chromatic and angular aberration. <i>Applied Physics Letters</i>. AIP Publishing. <a href=\"https://doi.org/10.1063/5.0035419\">https://doi.org/10.1063/5.0035419</a>","chicago":"Lin, Zin, Charles Roques-Carmes, Rasmus E. Christiansen, Marin Soljačić, and Steven G. Johnson. “Computational Inverse Design for Ultra-Compact Single-Piece Metalenses Free of Chromatic and Angular Aberration.” <i>Applied Physics Letters</i>. AIP Publishing, 2021. <a href=\"https://doi.org/10.1063/5.0035419\">https://doi.org/10.1063/5.0035419</a>.","short":"Z. Lin, C. Roques-Carmes, R.E. Christiansen, M. Soljačić, S.G. Johnson, Applied Physics Letters 118 (2021).","ama":"Lin Z, Roques-Carmes C, Christiansen RE, Soljačić M, Johnson SG. Computational inverse design for ultra-compact single-piece metalenses free of chromatic and angular aberration. <i>Applied Physics Letters</i>. 2021;118(4). doi:<a href=\"https://doi.org/10.1063/5.0035419\">10.1063/5.0035419</a>","mla":"Lin, Zin, et al. “Computational Inverse Design for Ultra-Compact Single-Piece Metalenses Free of Chromatic and Angular Aberration.” <i>Applied Physics Letters</i>, vol. 118, no. 4, 041104, AIP Publishing, 2021, doi:<a href=\"https://doi.org/10.1063/5.0035419\">10.1063/5.0035419</a>."},"main_file_link":[{"url":"https://doi.org/10.1063/5.0035419","open_access":"1"}],"OA_place":"publisher","article_number":"041104","abstract":[{"lang":"eng","text":"We present full-Maxwell topology-optimization design of a single-piece multilayer metalens, about 10 wavelengths λ in thickness, which simultaneously focuses over a 60° angular range and a 23% spectral bandwidth without suffering chromatic or angular aberration, a “plan-achromat.” At all angles and frequencies, it achieves diffraction-limited focusing (Strehl ratio &amp;gt;0.8) and an absolute focusing efficiency of &amp;gt;50%. Both 2D and 3D axisymmetric designs are presented, optimized over ∼105 degrees of freedom. We also demonstrate shortening the lens-to-sensor distance while producing the same image as for a longer “virtual” focal length and maintaining plan-achromaticity. These proof-of-concept designs demonstrate the ultra-compact multifunctionality that can be achieved by exploiting the full wave physics of subwavelength designs and motivate future work on design and fabrication of multilayer metaoptics."}],"publisher":"AIP Publishing","language":[{"iso":"eng"}],"publication_identifier":{"issn":["0003-6951"],"eissn":["1077-3118"]},"day":"27","year":"2021","tmp":{"image":"/images/cc_by.png","short":"CC BY (4.0)","legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)"},"title":"Computational inverse design for ultra-compact single-piece metalenses free of chromatic and angular aberration","article_processing_charge":"No","date_updated":"2026-04-27T09:56:01Z","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","external_id":{"arxiv":["2011.10467"]},"OA_type":"hybrid","volume":118,"extern":"1","scopus_import":"1","_id":"21552","author":[{"full_name":"Lin, Zin","last_name":"Lin","first_name":"Zin"},{"first_name":"Charles","last_name":"Roques-Carmes","full_name":"Roques-Carmes, Charles","id":"e2e68fc9-6505-11ef-a541-eb4e72cc3e82"},{"full_name":"Christiansen, Rasmus E.","first_name":"Rasmus E.","last_name":"Christiansen"},{"first_name":"Marin","last_name":"Soljačić","full_name":"Soljačić, Marin"},{"first_name":"Steven G.","last_name":"Johnson","full_name":"Johnson, Steven G."}],"ddc":["530"],"article_type":"original","date_published":"2021-01-27T00:00:00Z","month":"01","publication":"Applied Physics Letters","status":"public","doi":"10.1063/5.0035419","quality_controlled":"1"},{"author":[{"last_name":"Miranti","first_name":"Retno","full_name":"Miranti, Retno"},{"full_name":"Septianto, Ricky Dwi","last_name":"Septianto","first_name":"Ricky Dwi"},{"last_name":"Ibáñez","first_name":"Maria","id":"43C61214-F248-11E8-B48F-1D18A9856A87","full_name":"Ibáñez, Maria","orcid":"0000-0001-5013-2843"},{"last_name":"Kovalenko","first_name":"Maksym V.","full_name":"Kovalenko, Maksym V."},{"full_name":"Matsushita, Nobuhiro","last_name":"Matsushita","first_name":"Nobuhiro"},{"last_name":"Iwasa","first_name":"Yoshihiro","full_name":"Iwasa, Yoshihiro"},{"full_name":"Bisri, Satria Zulkarnaen","last_name":"Bisri","first_name":"Satria Zulkarnaen"}],"ddc":["530"],"isi":1,"volume":117,"scopus_import":"1","_id":"8746","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","external_id":{"isi":["000591639700001"]},"article_processing_charge":"No","title":"Electron transport in iodide-capped core@shell PbTe@PbS colloidal nanocrystal solids","date_updated":"2026-06-18T19:36:46Z","status":"public","doi":"10.1063/5.0025965","quality_controlled":"1","month":"10","publication":"Applied Physics Letters","article_type":"original","date_published":"2020-10-26T00:00:00Z","department":[{"_id":"MaIb"}],"main_file_link":[{"url":"https://doi.org/10.1063/5.0025965","open_access":"1"}],"acknowledgement":"This work was partly supported by Grants-in-Aid for Scientific Research by Young Scientist A (KAKENHI Wakate-A) No.\r\nJP17H04802, Grants-in-Aid for Scientific Research No. JP19H05602 from the Japan Society for the Promotion of Science, and RIKEN Incentive Research Grant (Shoreikadai) 2016. M.V.K. and M.I. acknowledge financial support from the European Union (EU) via FP7 ERC Starting Grant 2012 (Project NANOSOLID, GA No. 306733) and ETH Zurich via ETH career seed grant (No. SEED-18 16-2). We acknowledge Mrs. T. Kikitsu and Dr. D. Hashizume (RIKEN-CEMS) for access to the transmission electron microscope facility.","publication_status":"published","citation":{"ieee":"R. Miranti <i>et al.</i>, “Electron transport in iodide-capped core@shell PbTe@PbS colloidal nanocrystal solids,” <i>Applied Physics Letters</i>, vol. 117, no. 17. AIP Publishing, 2020.","apa":"Miranti, R., Septianto, R. D., Ibáñez, M., Kovalenko, M. V., Matsushita, N., Iwasa, Y., &#38; Bisri, S. Z. (2020). Electron transport in iodide-capped core@shell PbTe@PbS colloidal nanocrystal solids. <i>Applied Physics Letters</i>. AIP Publishing. <a href=\"https://doi.org/10.1063/5.0025965\">https://doi.org/10.1063/5.0025965</a>","ista":"Miranti R, Septianto RD, Ibáñez M, Kovalenko MV, Matsushita N, Iwasa Y, Bisri SZ. 2020. Electron transport in iodide-capped core@shell PbTe@PbS colloidal nanocrystal solids. Applied Physics Letters. 117(17), 173101.","short":"R. Miranti, R.D. Septianto, M. Ibáñez, M.V. Kovalenko, N. Matsushita, Y. Iwasa, S.Z. Bisri, Applied Physics Letters 117 (2020).","chicago":"Miranti, Retno, Ricky Dwi Septianto, Maria Ibáñez, Maksym V. Kovalenko, Nobuhiro Matsushita, Yoshihiro Iwasa, and Satria Zulkarnaen Bisri. “Electron Transport in Iodide-Capped Core@shell PbTe@PbS Colloidal Nanocrystal Solids.” <i>Applied Physics Letters</i>. AIP Publishing, 2020. <a href=\"https://doi.org/10.1063/5.0025965\">https://doi.org/10.1063/5.0025965</a>.","ama":"Miranti R, Septianto RD, Ibáñez M, et al. Electron transport in iodide-capped core@shell PbTe@PbS colloidal nanocrystal solids. <i>Applied Physics Letters</i>. 2020;117(17). doi:<a href=\"https://doi.org/10.1063/5.0025965\">10.1063/5.0025965</a>","mla":"Miranti, Retno, et al. “Electron Transport in Iodide-Capped Core@shell PbTe@PbS Colloidal Nanocrystal Solids.” <i>Applied Physics Letters</i>, vol. 117, no. 17, 173101, AIP Publishing, 2020, doi:<a href=\"https://doi.org/10.1063/5.0025965\">10.1063/5.0025965</a>."},"type":"journal_article","oa_version":"Published Version","oa":1,"intvolume":"       117","fulldoi":"https://doi.org/10.1063/5.0025965","issue":"17","date_created":"2020-11-09T08:05:43Z","day":"26","year":"2020","publication_identifier":{"eissn":["1077-3118"],"issn":["0003-6951"]},"publisher":"AIP Publishing","language":[{"iso":"eng"}],"abstract":[{"text":"Research in the field of colloidal semiconductor nanocrystals (NCs) has progressed tremendously, mostly because of their exceptional optoelectronic properties. Core@shell NCs, in which one or more inorganic layers overcoat individual NCs, recently received significant attention due to their remarkable optical characteristics. Reduced Auger recombination, suppressed blinking, and enhanced carrier multiplication are among the merits of core@shell NCs. Despite their importance in device development, the influence of the shell and the surface modification of the core@shell NC assemblies on the charge carrier transport remains a pertinent research objective. Type-II PbTe@PbS core@shell NCs, in which exclusive electron transport was demonstrated, still exhibit instability of their electron \r\n ransport. Here, we demonstrate the enhancement of electron transport and stability in PbTe@PbS core@shell NC assemblies using iodide as a surface passivating ligand. The combination of the PbS shelling and the use of the iodide ligand contributes to the addition of one mobile electron for each core@shell NC. Furthermore, both electron mobility and on/off current modulation ratio values of the core@shell NC field-effect transistor are steady with the usage of iodide. Excellent stability in these exclusively electron-transporting core@shell NCs paves the way for their utilization in electronic devices. ","lang":"eng"}],"article_number":"173101"},{"article_type":"original","date_published":"2005-01-01T00:00:00Z","doi":"10.1063/1.2150278","status":"public","publication":"Applied Physics Letters","month":"01","user_id":"317138e5-6ab7-11ef-aa6d-ffef3953e345","date_updated":"2026-08-13T07:32:29Z","article_processing_charge":"No","title":"Periodic pillar structures by Si etching of multilayer GeSi/Si islands","author":[{"full_name":"Zhong, Zheyang","first_name":"Zheyang","last_name":"Zhong"},{"last_name":"Katsaros","first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","full_name":"Katsaros, Georgios"},{"last_name":"Stoffel","first_name":"Mathieu","full_name":"Stoffel, Mathieu"},{"full_name":"Costantini, Giovanni","first_name":"Giovanni","last_name":"Costantini"},{"last_name":"Kern","first_name":"Klaus","full_name":"Kern, Klaus"},{"first_name":"Oliver","last_name":"Schmidt","full_name":"Schmidt, Oliver"},{"last_name":"Jin Phillipp","first_name":"Neng","full_name":"Jin Phillipp, Neng"},{"last_name":"Bauer","first_name":"Günther","full_name":"Bauer, Günther"}],"_id":"1743","extern":"1","volume":87,"OA_type":"closed access","language":[{"iso":"eng"}],"page":"1 - 3","publisher":"American Institute of Physics","publist_id":"5381","abstract":[{"text":"Laterally aligned multilayer GeSiSi islands grown on a patterned Si (001) substrate are disclosed by selective etching of Si in a KOH solution. This procedure allows us to visualize the vertical alignment of the islands in a three-dimensional perspective. Our technique reveals that partly coalesced double islands in the initial layer do not merge together, but instead gradually reproduce into well-separated double islands in upper layers. We attribute this effect to very thin spacer layers, which efficiently transfer the strain modulation of each island through the spacer layer to the surface. The etching rate of Si is reduced in tensile strained regions, which helps to preserve sufficient Si between the stacked islands to form a periodic array of freestanding and vertically modulated heterostructure pillars.","lang":"eng"}],"year":"2005","day":"01","publication_identifier":{"issn":["0003-6951"],"eissn":["1077-3118"]},"fulldoi":"https://doi.org/10.1063/1.2150278","intvolume":"        87","oa_version":"None","type":"journal_article","issue":"26","date_created":"2018-12-11T11:53:46Z","citation":{"mla":"Zhong, Zheyang, et al. “Periodic Pillar Structures by Si Etching of Multilayer GeSi/Si Islands.” <i>Applied Physics Letters</i>, vol. 87, no. 26, American Institute of Physics, 2005, pp. 1–3, doi:<a href=\"https://doi.org/10.1063/1.2150278\">10.1063/1.2150278</a>.","ama":"Zhong Z, Katsaros G, Stoffel M, et al. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. <i>Applied Physics Letters</i>. 2005;87(26):1-3. doi:<a href=\"https://doi.org/10.1063/1.2150278\">10.1063/1.2150278</a>","chicago":"Zhong, Zheyang, Georgios Katsaros, Mathieu Stoffel, Giovanni Costantini, Klaus Kern, Oliver Schmidt, Neng Jin Phillipp, and Günther Bauer. “Periodic Pillar Structures by Si Etching of Multilayer GeSi/Si Islands.” <i>Applied Physics Letters</i>. American Institute of Physics, 2005. <a href=\"https://doi.org/10.1063/1.2150278\">https://doi.org/10.1063/1.2150278</a>.","short":"Z. Zhong, G. Katsaros, M. Stoffel, G. Costantini, K. Kern, O. Schmidt, N. Jin Phillipp, G. Bauer, Applied Physics Letters 87 (2005) 1–3.","ista":"Zhong Z, Katsaros G, Stoffel M, Costantini G, Kern K, Schmidt O, Jin Phillipp N, Bauer G. 2005. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. 87(26), 1–3.","apa":"Zhong, Z., Katsaros, G., Stoffel, M., Costantini, G., Kern, K., Schmidt, O., … Bauer, G. (2005). Periodic pillar structures by Si etching of multilayer GeSi/Si islands. <i>Applied Physics Letters</i>. American Institute of Physics. <a href=\"https://doi.org/10.1063/1.2150278\">https://doi.org/10.1063/1.2150278</a>","ieee":"Z. Zhong <i>et al.</i>, “Periodic pillar structures by Si etching of multilayer GeSi/Si islands,” <i>Applied Physics Letters</i>, vol. 87, no. 26. American Institute of Physics, pp. 1–3, 2005."},"publication_status":"published","acknowledgement":"This work was supported by the BMBF (03N8711) and the EU NOE SANDiE"}]