---
OA_place: repository
OA_type: green
_id: '22619'
abstract:
- lang: eng
  text: Planar germanium is currently the only semiconducting platform where high-coherence
    spin qubits and proximity-induced superconductivity have each been demonstrated.
    Recent research into spin qubits in Ge/SiGe heterostructures has focused on increasing
    the thickness of the SiGe capping layer, reporting improvements in the electrostatic
    noise levels. Meanwhile, heterostructures with thinner capping layers remain rather
    unexplored, despite the potential advantages for proximity-induced superconductivity.
    Here, we study a Ge/SiGe heterostructure with a thin SiGe cap d - 4nm and investigate
    its viability to host low-noise quantum dots. To keep the thermal budget compatible
    with superconducting layers, low-temperature oxide deposition processes were developed
    and implemented for the gate dielectrics. The charge noise level of the fabricated
    devices is estimated to be 1.8  +- 1.0 μeV/ square HZ⁠, comparable to devices
    fabricated on shallow heterostructures (⁠ d - 20nm⁠) with high-temperature deposited
    oxides. Low charge noise levels, together with the straightforward integration
    of superconductors, make this heterostructure an attractive platform for prototyping
    hybrid semiconducting–superconducting devices.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
acknowledgement: 'We sincerely thank Nick van Loo, Greg Mazur, Dhananjay Joshi, and
  Srijit Goswami for their inputs on low-temperature HfOx deposition; Matias Urdampilleta
  and Daniel Jirovec for discussions; and Kristen Léonard for the careful reading
  of the manuscript. This research was supported by the Scientific Service Units of
  ISTA through resources provided by the Miba Machine Shop and the Nanofabrication
  facility. The authors acknowledge support from the NOMIS Foundation; the European
  Innovation Council Pathfinder Grant No. 101115315 (QuKiT); the FWF Projects with
  DOI:10.55776/F86, DOI:10.55776/PAT7682124, and DOI:10.55776/P36507; and the HE-MSCA-PF
  project with DOI:10.3030/101150858. ICN2 is supported by the Severo Ochoa Program
  from Spanish MCIN/AEI (Grant No.: CEX2021-001214-S) and is funded by the CERCA Program/Generalitat
  de Catalunya. ICN2 acknowledges funding from Generalitat de Catalunya (No. 2021SGR00457).
  We acknowledge support from the CSIC Interdisciplinary Thematic Platform (PTI+)
  on Quantum Technologies (PTI-QTEP+).'
article_number: '033505'
article_processing_charge: No
article_type: original
arxiv: 1
author:
- first_name: Maksim
  full_name: Borovkov, Maksim
  id: 1fd0975f-8b61-11ed-b69e-d149334f28c5
  last_name: Borovkov
- first_name: Yona A
  full_name: Schell, Yona A
  id: fe39122d-06bb-11ec-a33b-9e22b40e40a5
  last_name: Schell
- first_name: Dina
  full_name: Sokolova, Dina
  id: 2d2d62f8-72f0-11ef-b75a-8ec3e8a60032
  last_name: Sokolova
- first_name: Kevin Etienne Robert
  full_name: Roux, Kevin Etienne Robert
  id: 53f93ea2-803f-11ed-ab7e-b283135794ef
  last_name: Roux
- first_name: Paul
  full_name: Falthansl-Scheinecker, Paul
  id: 85b43b21-15b2-11ec-abd3-e2c252cc2285
  last_name: Falthansl-Scheinecker
- first_name: Giorgio
  full_name: Fabris, Giorgio
  id: 298cf6f3-1ff6-11ee-9fa6-d94cfa0b3352
  last_name: Fabris
- first_name: Devashish C
  full_name: Shah, Devashish C
  id: de191434-4e7e-11ef-bf4b-9a056fc19fc3
  last_name: Shah
  orcid: 0009-0007-5829-7707
- first_name: Jaime
  full_name: Saez Mollejo, Jaime
  id: e0390f72-f6e0-11ea-865d-862393336714
  last_name: Saez Mollejo
- first_name: Rodolfo
  full_name: Previdi, Rodolfo
  id: bc4ea1dc-00ce-11ec-8a4e-b325ca8b9876
  last_name: Previdi
- first_name: Inas
  full_name: Taha, Inas
  last_name: Taha
- first_name: Aziz
  full_name: Genç, Aziz
  last_name: Genç
- first_name: Jordi
  full_name: Arbiol, Jordi
  last_name: Arbiol
- first_name: Stefano
  full_name: Calcaterra, Stefano
  last_name: Calcaterra
- first_name: Afonso De Cerdeira
  full_name: Oliveira, Afonso De Cerdeira
  last_name: Oliveira
- first_name: Daniel
  full_name: Chrastina, Daniel
  last_name: Chrastina
- first_name: Giovanni
  full_name: Isella, Giovanni
  last_name: Isella
- first_name: Anton
  full_name: Bubis, Anton
  id: 1f6212b5-f795-11ec-9c0c-de4780302890
  last_name: Bubis
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
citation:
  ama: Borovkov M, Schell YA, Sokolova D, et al. Low-noise quantum dots in ultra-shallow
    Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting
    devices. <i>Applied Physics Letters</i>. 2026;129(3). doi:<a href="https://doi.org/10.1063/5.0333142">10.1063/5.0333142</a>
  apa: Borovkov, M., Schell, Y. A., Sokolova, D., Roux, K. E. R., Falthansl-Scheinecker,
    P., Fabris, G., … Katsaros, G. (2026). Low-noise quantum dots in ultra-shallow
    Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting
    devices. <i>Applied Physics Letters</i>. AIP Publishing. <a href="https://doi.org/10.1063/5.0333142">https://doi.org/10.1063/5.0333142</a>
  chicago: Borovkov, Maksim, Yona A Schell, Dina Sokolova, Kevin Etienne Robert Roux,
    Paul Falthansl-Scheinecker, Giorgio Fabris, Devashish C Shah, et al. “Low-Noise
    Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid
    Semiconducting–Superconducting Devices.” <i>Applied Physics Letters</i>. AIP Publishing,
    2026. <a href="https://doi.org/10.1063/5.0333142">https://doi.org/10.1063/5.0333142</a>.
  ieee: M. Borovkov <i>et al.</i>, “Low-noise quantum dots in ultra-shallow Ge/SiGe
    heterostructures for prototyping hybrid semiconducting–superconducting devices,”
    <i>Applied Physics Letters</i>, vol. 129, no. 3. AIP Publishing, 2026.
  ista: Borovkov M, Schell YA, Sokolova D, Roux KER, Falthansl-Scheinecker P, Fabris
    G, Shah DC, Saez Mollejo J, Previdi R, Taha I, Genç A, Arbiol J, Calcaterra S,
    Oliveira ADC, Chrastina D, Isella G, Bubis A, Katsaros G. 2026. Low-noise quantum
    dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting
    devices. Applied Physics Letters. 129(3), 033505.
  mla: Borovkov, Maksim, et al. “Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures
    for Prototyping Hybrid Semiconducting–Superconducting Devices.” <i>Applied Physics
    Letters</i>, vol. 129, no. 3, 033505, AIP Publishing, 2026, doi:<a href="https://doi.org/10.1063/5.0333142">10.1063/5.0333142</a>.
  short: M. Borovkov, Y.A. Schell, D. Sokolova, K.E.R. Roux, P. Falthansl-Scheinecker,
    G. Fabris, D.C. Shah, J. Saez Mollejo, R. Previdi, I. Taha, A. Genç, J. Arbiol,
    S. Calcaterra, A.D.C. Oliveira, D. Chrastina, G. Isella, A. Bubis, G. Katsaros,
    Applied Physics Letters 129 (2026).
corr_author: '1'
das_tickbox: '1'
dataavailabilitystatement: The data that support the findings of this study are openly
  available in Institute of Science and Technology repository at http://doi.org/10.15479/AT-ISTA-22242,
  Ref. 50.
date_created: 2026-08-02T22:01:53Z
date_published: 2026-07-20T00:00:00Z
date_updated: 2026-08-03T11:08:39Z
day: '20'
department:
- _id: GeKa
- _id: GradSch
- _id: NanoFab
doi: 10.1063/5.0333142
external_id:
  arxiv:
  - '2602.21363'
fulldoi: https://doi.org/10.1063/5.0333142
intvolume: '       129'
issue: '3'
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://doi.org/10.48550/arXiv.2602.21363
month: '07'
oa: 1
oa_version: Preprint
project:
- _id: bdc2ca30-d553-11ed-ba76-cf164a5bb811
  grant_number: '101115315'
  name: Quantum bits with Kitaev Transmons
- _id: 34a66131-11ca-11ed-8bc3-a31681c6b03e
  grant_number: F8606
  name: 'Center for Correlated Quantum Materials and Solid State Quantum Systems:
    Conventional  and unconventional topological superconductors'
- _id: 5b9e579c-ab3d-11f0-914f-88754c5b5a3f
  grant_number: PAT 7682124
  name: Superconducting spin qubits in planar Ge
- _id: bd8bd29e-d553-11ed-ba76-f0070d4b237a
  grant_number: P36507
  name: Merging spin and superconducting qubits in planar Ge
- _id: 8ea8abf7-16d5-11f0-9cad-c41e56ec8bb3
  grant_number: '101150858'
  name: Realization and Manipulation of a Planar hybrid superconducting Andreev spin
    qubit in Germanium
publication: Applied Physics Letters
publication_identifier:
  eissn:
  - 1077-3118
  issn:
  - 0003-6951
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
related_material:
  record:
  - id: '22242'
    relation: research_data
    status: public
researchdata_availability: yes
scopus_import: '1'
status: public
supplementarymaterial: yes
title: Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping
  hybrid semiconducting–superconducting devices
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 129
year: '2026'
...
---
OA_place: repository
OA_type: green
_id: '20976'
abstract:
- lang: eng
  text: We present an experimental demonstration of an impedance-engineered Josephson
    parametric amplifier (IEJPA) fabricated in a single-step lithography process.
    Impedance-engineering is implemented using a lumped-element series LC circuit.
    We use a simpler lithography process where the entire device—impedance transformer
    and Josephson parametric amplifier (JPA)—is patterned in a single electron beam
    lithography step, followed by a double-angle Dolan-bridge technique for Al–AlOx–Al
    deposition. We observe amplification with 18 dB gain over a wide 400 MHz bandwidth
    centered around 5.3 GHz with added noise approaching the quantum limit, and a
    saturation power of −114 dBm. To accurately explain our experimental results,
    we extend existing theories for IEJPAs to incorporate the full sine nonlinearity
    of both the JPA and the transformer. Our work provides a route to simpler realization
    of broadband JPAs and a theoretical foundation for a regime of JPA operation that
    has been less explored in literature.
acknowledgement: The authors acknowledge receiving support from the Space Technology
  Cell at IISc and ISRO through the project STC-0444(2022) and the Ministry of Electronics
  and Information Technology of the Government of India, under the centre of Excellence
  of Quantum Technology at the Indian Institute of Science, as well as the office
  of Principle Scientific Advisor, Government of India. S.H. and A.P. acknowledge
  the support of the Kishore Vaigyanik Protsahan Yojana (KVPY). A.S. acknowledges
  the support of a New Faculty Initiation Grant (NFIG) from IIT Madras.
article_number: '254001'
article_processing_charge: No
article_type: original
arxiv: 1
author:
- first_name: Lipi
  full_name: Patel, Lipi
  last_name: Patel
- first_name: Samarth
  full_name: Hawaldar, Samarth
  id: 221708e1-1ff6-11ee-9fa6-85146607433e
  last_name: Hawaldar
  orcid: 0000-0002-1965-4309
- first_name: Aditya
  full_name: Panikkar, Aditya
  last_name: Panikkar
- first_name: Athreya
  full_name: Shankar, Athreya
  last_name: Shankar
- first_name: Baladitya
  full_name: Suri, Baladitya
  last_name: Suri
citation:
  ama: Patel L, Hawaldar S, Panikkar A, Shankar A, Suri B. Impedance-engineered Josephson
    parametric amplifier with single-step lithography. <i>Applied Physics Letters</i>.
    2025;127(25). doi:<a href="https://doi.org/10.1063/5.0290636">10.1063/5.0290636</a>
  apa: Patel, L., Hawaldar, S., Panikkar, A., Shankar, A., &#38; Suri, B. (2025).
    Impedance-engineered Josephson parametric amplifier with single-step lithography.
    <i>Applied Physics Letters</i>. AIP Publishing. <a href="https://doi.org/10.1063/5.0290636">https://doi.org/10.1063/5.0290636</a>
  chicago: Patel, Lipi, Samarth Hawaldar, Aditya Panikkar, Athreya Shankar, and Baladitya
    Suri. “Impedance-Engineered Josephson Parametric Amplifier with Single-Step Lithography.”
    <i>Applied Physics Letters</i>. AIP Publishing, 2025. <a href="https://doi.org/10.1063/5.0290636">https://doi.org/10.1063/5.0290636</a>.
  ieee: L. Patel, S. Hawaldar, A. Panikkar, A. Shankar, and B. Suri, “Impedance-engineered
    Josephson parametric amplifier with single-step lithography,” <i>Applied Physics
    Letters</i>, vol. 127, no. 25. AIP Publishing, 2025.
  ista: Patel L, Hawaldar S, Panikkar A, Shankar A, Suri B. 2025. Impedance-engineered
    Josephson parametric amplifier with single-step lithography. Applied Physics Letters.
    127(25), 254001.
  mla: Patel, Lipi, et al. “Impedance-Engineered Josephson Parametric Amplifier with
    Single-Step Lithography.” <i>Applied Physics Letters</i>, vol. 127, no. 25, 254001,
    AIP Publishing, 2025, doi:<a href="https://doi.org/10.1063/5.0290636">10.1063/5.0290636</a>.
  short: L. Patel, S. Hawaldar, A. Panikkar, A. Shankar, B. Suri, Applied Physics
    Letters 127 (2025).
date_created: 2026-01-11T23:01:34Z
date_published: 2025-12-22T00:00:00Z
date_updated: 2026-01-12T09:57:53Z
day: '22'
department:
- _id: JoFi
doi: 10.1063/5.0290636
external_id:
  arxiv:
  - '2507.09298'
fulldoi: https://doi.org/10.1063/5.0290636
intvolume: '       127'
issue: '25'
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://doi.org/10.48550/arXiv.2507.09298
month: '12'
oa: 1
oa_version: Preprint
publication: Applied Physics Letters
publication_identifier:
  eissn:
  - 1077-3118
  issn:
  - 0003-6951
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
scopus_import: '1'
status: public
title: Impedance-engineered Josephson parametric amplifier with single-step lithography
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 127
year: '2025'
...
---
OA_place: publisher
OA_type: hybrid
_id: '21552'
abstract:
- lang: eng
  text: We present full-Maxwell topology-optimization design of a single-piece multilayer
    metalens, about 10 wavelengths λ in thickness, which simultaneously focuses over
    a 60° angular range and a 23% spectral bandwidth without suffering chromatic or
    angular aberration, a “plan-achromat.” At all angles and frequencies, it achieves
    diffraction-limited focusing (Strehl ratio &amp;gt;0.8) and an absolute focusing
    efficiency of &amp;gt;50%. Both 2D and 3D axisymmetric designs are presented,
    optimized over ∼105 degrees of freedom. We also demonstrate shortening the lens-to-sensor
    distance while producing the same image as for a longer “virtual” focal length
    and maintaining plan-achromaticity. These proof-of-concept designs demonstrate
    the ultra-compact multifunctionality that can be achieved by exploiting the full
    wave physics of subwavelength designs and motivate future work on design and fabrication
    of multilayer metaoptics.
article_number: '041104'
article_processing_charge: No
article_type: original
arxiv: 1
author:
- first_name: Zin
  full_name: Lin, Zin
  last_name: Lin
- first_name: Charles
  full_name: Roques-Carmes, Charles
  id: e2e68fc9-6505-11ef-a541-eb4e72cc3e82
  last_name: Roques-Carmes
- first_name: Rasmus E.
  full_name: Christiansen, Rasmus E.
  last_name: Christiansen
- first_name: Marin
  full_name: Soljačić, Marin
  last_name: Soljačić
- first_name: Steven G.
  full_name: Johnson, Steven G.
  last_name: Johnson
citation:
  ama: Lin Z, Roques-Carmes C, Christiansen RE, Soljačić M, Johnson SG. Computational
    inverse design for ultra-compact single-piece metalenses free of chromatic and
    angular aberration. <i>Applied Physics Letters</i>. 2021;118(4). doi:<a href="https://doi.org/10.1063/5.0035419">10.1063/5.0035419</a>
  apa: Lin, Z., Roques-Carmes, C., Christiansen, R. E., Soljačić, M., &#38; Johnson,
    S. G. (2021). Computational inverse design for ultra-compact single-piece metalenses
    free of chromatic and angular aberration. <i>Applied Physics Letters</i>. AIP
    Publishing. <a href="https://doi.org/10.1063/5.0035419">https://doi.org/10.1063/5.0035419</a>
  chicago: Lin, Zin, Charles Roques-Carmes, Rasmus E. Christiansen, Marin Soljačić,
    and Steven G. Johnson. “Computational Inverse Design for Ultra-Compact Single-Piece
    Metalenses Free of Chromatic and Angular Aberration.” <i>Applied Physics Letters</i>.
    AIP Publishing, 2021. <a href="https://doi.org/10.1063/5.0035419">https://doi.org/10.1063/5.0035419</a>.
  ieee: Z. Lin, C. Roques-Carmes, R. E. Christiansen, M. Soljačić, and S. G. Johnson,
    “Computational inverse design for ultra-compact single-piece metalenses free of
    chromatic and angular aberration,” <i>Applied Physics Letters</i>, vol. 118, no.
    4. AIP Publishing, 2021.
  ista: Lin Z, Roques-Carmes C, Christiansen RE, Soljačić M, Johnson SG. 2021. Computational
    inverse design for ultra-compact single-piece metalenses free of chromatic and
    angular aberration. Applied Physics Letters. 118(4), 041104.
  mla: Lin, Zin, et al. “Computational Inverse Design for Ultra-Compact Single-Piece
    Metalenses Free of Chromatic and Angular Aberration.” <i>Applied Physics Letters</i>,
    vol. 118, no. 4, 041104, AIP Publishing, 2021, doi:<a href="https://doi.org/10.1063/5.0035419">10.1063/5.0035419</a>.
  short: Z. Lin, C. Roques-Carmes, R.E. Christiansen, M. Soljačić, S.G. Johnson, Applied
    Physics Letters 118 (2021).
date_created: 2026-03-30T12:22:47Z
date_published: 2021-01-27T00:00:00Z
date_updated: 2026-04-27T09:56:01Z
day: '27'
ddc:
- '530'
doi: 10.1063/5.0035419
extern: '1'
external_id:
  arxiv:
  - '2011.10467'
fulldoi: https://doi.org/10.1063/5.0035419
intvolume: '       118'
issue: '4'
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://doi.org/10.1063/5.0035419
month: '01'
oa: 1
oa_version: Published Version
publication: Applied Physics Letters
publication_identifier:
  eissn:
  - 1077-3118
  issn:
  - 0003-6951
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
scopus_import: '1'
status: public
title: Computational inverse design for ultra-compact single-piece metalenses free
  of chromatic and angular aberration
tmp:
  image: /images/cc_by.png
  legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
  name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
  short: CC BY (4.0)
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 118
year: '2021'
...
---
_id: '8746'
abstract:
- lang: eng
  text: "Research in the field of colloidal semiconductor nanocrystals (NCs) has progressed
    tremendously, mostly because of their exceptional optoelectronic properties. Core@shell
    NCs, in which one or more inorganic layers overcoat individual NCs, recently received
    significant attention due to their remarkable optical characteristics. Reduced
    Auger recombination, suppressed blinking, and enhanced carrier multiplication
    are among the merits of core@shell NCs. Despite their importance in device development,
    the influence of the shell and the surface modification of the core@shell NC assemblies
    on the charge carrier transport remains a pertinent research objective. Type-II
    PbTe@PbS core@shell NCs, in which exclusive electron transport was demonstrated,
    still exhibit instability of their electron \r\n ransport. Here, we demonstrate
    the enhancement of electron transport and stability in PbTe@PbS core@shell NC
    assemblies using iodide as a surface passivating ligand. The combination of the
    PbS shelling and the use of the iodide ligand contributes to the addition of one
    mobile electron for each core@shell NC. Furthermore, both electron mobility and
    on/off current modulation ratio values of the core@shell NC field-effect transistor
    are steady with the usage of iodide. Excellent stability in these exclusively
    electron-transporting core@shell NCs paves the way for their utilization in electronic
    devices. "
acknowledgement: "This work was partly supported by Grants-in-Aid for Scientific Research
  by Young Scientist A (KAKENHI Wakate-A) No.\r\nJP17H04802, Grants-in-Aid for Scientific
  Research No. JP19H05602 from the Japan Society for the Promotion of Science, and
  RIKEN Incentive Research Grant (Shoreikadai) 2016. M.V.K. and M.I. acknowledge financial
  support from the European Union (EU) via FP7 ERC Starting Grant 2012 (Project NANOSOLID,
  GA No. 306733) and ETH Zurich via ETH career seed grant (No. SEED-18 16-2). We acknowledge
  Mrs. T. Kikitsu and Dr. D. Hashizume (RIKEN-CEMS) for access to the transmission
  electron microscope facility."
article_number: '173101'
article_processing_charge: No
article_type: original
author:
- first_name: Retno
  full_name: Miranti, Retno
  last_name: Miranti
- first_name: Ricky Dwi
  full_name: Septianto, Ricky Dwi
  last_name: Septianto
- first_name: Maria
  full_name: Ibáñez, Maria
  id: 43C61214-F248-11E8-B48F-1D18A9856A87
  last_name: Ibáñez
  orcid: 0000-0001-5013-2843
- first_name: Maksym V.
  full_name: Kovalenko, Maksym V.
  last_name: Kovalenko
- first_name: Nobuhiro
  full_name: Matsushita, Nobuhiro
  last_name: Matsushita
- first_name: Yoshihiro
  full_name: Iwasa, Yoshihiro
  last_name: Iwasa
- first_name: Satria Zulkarnaen
  full_name: Bisri, Satria Zulkarnaen
  last_name: Bisri
citation:
  ama: Miranti R, Septianto RD, Ibáñez M, et al. Electron transport in iodide-capped
    core@shell PbTe@PbS colloidal nanocrystal solids. <i>Applied Physics Letters</i>.
    2020;117(17). doi:<a href="https://doi.org/10.1063/5.0025965">10.1063/5.0025965</a>
  apa: Miranti, R., Septianto, R. D., Ibáñez, M., Kovalenko, M. V., Matsushita, N.,
    Iwasa, Y., &#38; Bisri, S. Z. (2020). Electron transport in iodide-capped core@shell
    PbTe@PbS colloidal nanocrystal solids. <i>Applied Physics Letters</i>. AIP Publishing.
    <a href="https://doi.org/10.1063/5.0025965">https://doi.org/10.1063/5.0025965</a>
  chicago: Miranti, Retno, Ricky Dwi Septianto, Maria Ibáñez, Maksym V. Kovalenko,
    Nobuhiro Matsushita, Yoshihiro Iwasa, and Satria Zulkarnaen Bisri. “Electron Transport
    in Iodide-Capped Core@shell PbTe@PbS Colloidal Nanocrystal Solids.” <i>Applied
    Physics Letters</i>. AIP Publishing, 2020. <a href="https://doi.org/10.1063/5.0025965">https://doi.org/10.1063/5.0025965</a>.
  ieee: R. Miranti <i>et al.</i>, “Electron transport in iodide-capped core@shell
    PbTe@PbS colloidal nanocrystal solids,” <i>Applied Physics Letters</i>, vol. 117,
    no. 17. AIP Publishing, 2020.
  ista: Miranti R, Septianto RD, Ibáñez M, Kovalenko MV, Matsushita N, Iwasa Y, Bisri
    SZ. 2020. Electron transport in iodide-capped core@shell PbTe@PbS colloidal nanocrystal
    solids. Applied Physics Letters. 117(17), 173101.
  mla: Miranti, Retno, et al. “Electron Transport in Iodide-Capped Core@shell PbTe@PbS
    Colloidal Nanocrystal Solids.” <i>Applied Physics Letters</i>, vol. 117, no. 17,
    173101, AIP Publishing, 2020, doi:<a href="https://doi.org/10.1063/5.0025965">10.1063/5.0025965</a>.
  short: R. Miranti, R.D. Septianto, M. Ibáñez, M.V. Kovalenko, N. Matsushita, Y.
    Iwasa, S.Z. Bisri, Applied Physics Letters 117 (2020).
date_created: 2020-11-09T08:05:43Z
date_published: 2020-10-26T00:00:00Z
date_updated: 2026-06-18T19:36:46Z
day: '26'
ddc:
- '530'
department:
- _id: MaIb
doi: 10.1063/5.0025965
external_id:
  isi:
  - '000591639700001'
fulldoi: https://doi.org/10.1063/5.0025965
intvolume: '       117'
isi: 1
issue: '17'
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://doi.org/10.1063/5.0025965
month: '10'
oa: 1
oa_version: Published Version
publication: Applied Physics Letters
publication_identifier:
  eissn:
  - 1077-3118
  issn:
  - 0003-6951
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
scopus_import: '1'
status: public
title: Electron transport in iodide-capped core@shell PbTe@PbS colloidal nanocrystal
  solids
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 117
year: '2020'
...
---
OA_type: closed access
_id: '1743'
abstract:
- lang: eng
  text: Laterally aligned multilayer GeSiSi islands grown on a patterned Si (001)
    substrate are disclosed by selective etching of Si in a KOH solution. This procedure
    allows us to visualize the vertical alignment of the islands in a three-dimensional
    perspective. Our technique reveals that partly coalesced double islands in the
    initial layer do not merge together, but instead gradually reproduce into well-separated
    double islands in upper layers. We attribute this effect to very thin spacer layers,
    which efficiently transfer the strain modulation of each island through the spacer
    layer to the surface. The etching rate of Si is reduced in tensile strained regions,
    which helps to preserve sufficient Si between the stacked islands to form a periodic
    array of freestanding and vertically modulated heterostructure pillars.
acknowledgement: This work was supported by the BMBF (03N8711) and the EU NOE SANDiE
article_processing_charge: No
article_type: original
author:
- first_name: Zheyang
  full_name: Zhong, Zheyang
  last_name: Zhong
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
- first_name: Mathieu
  full_name: Stoffel, Mathieu
  last_name: Stoffel
- first_name: Giovanni
  full_name: Costantini, Giovanni
  last_name: Costantini
- first_name: Klaus
  full_name: Kern, Klaus
  last_name: Kern
- first_name: Oliver
  full_name: Schmidt, Oliver
  last_name: Schmidt
- first_name: Neng
  full_name: Jin Phillipp, Neng
  last_name: Jin Phillipp
- first_name: Günther
  full_name: Bauer, Günther
  last_name: Bauer
citation:
  ama: Zhong Z, Katsaros G, Stoffel M, et al. Periodic pillar structures by Si etching
    of multilayer GeSi/Si islands. <i>Applied Physics Letters</i>. 2005;87(26):1-3.
    doi:<a href="https://doi.org/10.1063/1.2150278">10.1063/1.2150278</a>
  apa: Zhong, Z., Katsaros, G., Stoffel, M., Costantini, G., Kern, K., Schmidt, O.,
    … Bauer, G. (2005). Periodic pillar structures by Si etching of multilayer GeSi/Si
    islands. <i>Applied Physics Letters</i>. American Institute of Physics. <a href="https://doi.org/10.1063/1.2150278">https://doi.org/10.1063/1.2150278</a>
  chicago: Zhong, Zheyang, Georgios Katsaros, Mathieu Stoffel, Giovanni Costantini,
    Klaus Kern, Oliver Schmidt, Neng Jin Phillipp, and Günther Bauer. “Periodic Pillar
    Structures by Si Etching of Multilayer GeSi/Si Islands.” <i>Applied Physics Letters</i>.
    American Institute of Physics, 2005. <a href="https://doi.org/10.1063/1.2150278">https://doi.org/10.1063/1.2150278</a>.
  ieee: Z. Zhong <i>et al.</i>, “Periodic pillar structures by Si etching of multilayer
    GeSi/Si islands,” <i>Applied Physics Letters</i>, vol. 87, no. 26. American Institute
    of Physics, pp. 1–3, 2005.
  ista: Zhong Z, Katsaros G, Stoffel M, Costantini G, Kern K, Schmidt O, Jin Phillipp
    N, Bauer G. 2005. Periodic pillar structures by Si etching of multilayer GeSi/Si
    islands. Applied Physics Letters. 87(26), 1–3.
  mla: Zhong, Zheyang, et al. “Periodic Pillar Structures by Si Etching of Multilayer
    GeSi/Si Islands.” <i>Applied Physics Letters</i>, vol. 87, no. 26, American Institute
    of Physics, 2005, pp. 1–3, doi:<a href="https://doi.org/10.1063/1.2150278">10.1063/1.2150278</a>.
  short: Z. Zhong, G. Katsaros, M. Stoffel, G. Costantini, K. Kern, O. Schmidt, N.
    Jin Phillipp, G. Bauer, Applied Physics Letters 87 (2005) 1–3.
date_created: 2018-12-11T11:53:46Z
date_published: 2005-01-01T00:00:00Z
date_updated: 2026-08-13T07:32:29Z
day: '01'
doi: 10.1063/1.2150278
extern: '1'
fulldoi: https://doi.org/10.1063/1.2150278
intvolume: '        87'
issue: '26'
language:
- iso: eng
month: '01'
oa_version: None
page: 1 - 3
publication: Applied Physics Letters
publication_identifier:
  eissn:
  - 1077-3118
  issn:
  - 0003-6951
publication_status: published
publisher: American Institute of Physics
publist_id: '5381'
status: public
title: Periodic pillar structures by Si etching of multilayer GeSi/Si islands
type: journal_article
user_id: 317138e5-6ab7-11ef-aa6d-ffef3953e345
volume: 87
year: '2005'
...