@article{19374,
  abstract     = {In the present study, the new ternary rare earth intermetallic compound PrNi6Si6 has been investigated. This work completes the study of the RNi6Si6 series (R = rare earth). While the RNi6Si6 compounds for R = La and Ce adopt the CeNi6Si6-type (tP52, P4/nbm, No. 125), surprisingly PrNi6Si6 crystallizes in the YNi6Si6 prototype (tP52, P − 4b2, No. 117) as do all the heavier lanthanides (but Lu). The YNi6Si6-type and its homolog CeNi6Si6 are two tetragonal ordered derivative of the cubic NaZn13-type structure. Lattice parameters for PrNi6Si6 are a = 7.7846(1) Å, c = 11.2144(1) Å, with a unit cell volume, Vobs = 679.585(5) Å3. The temperature dependence of the inverse magnetic susceptibility χ−1(T) follows the Curie–Weiss law, with calculated values of the effective magnetic moment (µeff) and Weiss temperature (Θpm) of 3.55 μB and − 4.5 K, respectively. While the observed µeff is very close to the theoretical value of 3.58 µB for the free Pr3+ ions, a negative value of the Weiss temperature suggests antiferromagnetic interactions in PrNi6Si6. Magnetization measurements confirm that PrNi₆Si₆ orders antiferromagnetically (AFM) below a Néel temperature (TN) of 9 K. The Ni atoms contribute negligibly to the magnetic properties of this phase. The specific heat of PrNi₆Si₆ is approximately 0.42 J K  − 1  g − 1. Measurements of electric and thermal transport reveal that PrNi₆Si₆ exhibits metallic behavior across a wide temperature range of 2–900 K, accompanied by a relatively low thermal conductivity of around 6 W K − 1 m − 1 at room temperature. Such properties, together with its high-temperature refractory behavior, make PrNi₆Si₆ worthy of consideration in technological applications where fairly good electrical conductivity should be accompanied by a limited thermal conductivity.},
  author       = {Singh, Saurabh and Provino, A. and Pallecchi, I. and Caglieris, F. and Mödlinger, M. and Mele, P. and Latronico, G. and Takeuchi, T. and Manfrinetti, P.},
  issn         = {1573-4803},
  journal      = {Journal of Materials Science},
  publisher    = {Springer Nature},
  title        = {{The new PrNi6Si6 intermetallic: From crystal structure to thermal and electrical transport properties across a wide temperature range (2–900 K)}},
  doi          = {10.1007/s10853-024-10582-y},
  volume       = {60},
  year         = {2025},
}

@article{11751,
  abstract     = {The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1 % Ho increases the maximum ZT to 0.31 at 221 K and the 3 % doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.},
  author       = {Lukas, K. C. and Joshi, G. and Modic, Kimberly A and Ren, Z. F. and Opeil, C. P.},
  issn         = {1573-4803},
  journal      = {Journal of Materials Science},
  number       = {15},
  pages        = {5729--5734},
  publisher    = {Springer Nature},
  title        = {{Thermoelectric properties of Ho-doped Bi0.88Sb0.12}},
  doi          = {10.1007/s10853-012-6463-6},
  volume       = {47},
  year         = {2012},
}

@article{7074,
  abstract     = {The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1 % Ho increases the maximum ZT to 0.31 at 221 K and the 3 % doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.},
  author       = {Lukas, K. C. and Joshi, G. and Modic, Kimberly A and Ren, Z. F. and Opeil, C. P.},
  issn         = {1573-4803},
  journal      = {Journal of Materials Science},
  number       = {15},
  pages        = {5729--5734},
  publisher    = {Springer Nature},
  title        = {{Thermoelectric properties of Ho-doped Bi0.88Sb0.12}},
  doi          = {10.1007/s10853-012-6463-6},
  volume       = {47},
  year         = {2012},
}