[{"year":"2025","quality_controlled":"1","publication_status":"published","intvolume":"        60","date_published":"2025-02-08T00:00:00Z","article_processing_charge":"No","fulldoi":"https://doi.org/10.1007/s10853-024-10582-y","day":"08","department":[{"_id":"MaIb"}],"month":"02","publisher":"Springer Nature","article_number":"100051","volume":60,"doi":"10.1007/s10853-024-10582-y","_id":"19374","title":"The new PrNi6Si6 intermetallic: From crystal structure to thermal and electrical transport properties across a wide temperature range (2–900 K)","status":"public","author":[{"id":"12d625da-9cb3-11ed-9667-af09d37d3f0a","first_name":"Saurabh","last_name":"Singh","orcid":"0000-0003-2209-5269","full_name":"Singh, Saurabh"},{"full_name":"Provino, A.","last_name":"Provino","first_name":"A."},{"first_name":"I.","last_name":"Pallecchi","full_name":"Pallecchi, I."},{"first_name":"F.","last_name":"Caglieris","full_name":"Caglieris, F."},{"full_name":"Mödlinger, M.","last_name":"Mödlinger","first_name":"M."},{"full_name":"Mele, P.","last_name":"Mele","first_name":"P."},{"full_name":"Latronico, G.","first_name":"G.","last_name":"Latronico"},{"full_name":"Takeuchi, T.","last_name":"Takeuchi","first_name":"T."},{"first_name":"P.","last_name":"Manfrinetti","full_name":"Manfrinetti, P."}],"date_created":"2025-03-09T23:01:29Z","article_type":"original","type":"journal_article","oa_version":"None","abstract":[{"lang":"eng","text":"In the present study, the new ternary rare earth intermetallic compound PrNi6Si6 has been investigated. This work completes the study of the RNi6Si6 series (R = rare earth). While the RNi6Si6 compounds for R = La and Ce adopt the CeNi6Si6-type (tP52, P4/nbm, No. 125), surprisingly PrNi6Si6 crystallizes in the YNi6Si6 prototype (tP52, P − 4b2, No. 117) as do all the heavier lanthanides (but Lu). The YNi6Si6-type and its homolog CeNi6Si6 are two tetragonal ordered derivative of the cubic NaZn13-type structure. Lattice parameters for PrNi6Si6 are a = 7.7846(1) Å, c = 11.2144(1) Å, with a unit cell volume, Vobs = 679.585(5) Å3. The temperature dependence of the inverse magnetic susceptibility χ−1(T) follows the Curie–Weiss law, with calculated values of the effective magnetic moment (µeff) and Weiss temperature (Θpm) of 3.55 μB and − 4.5 K, respectively. While the observed µeff is very close to the theoretical value of 3.58 µB for the free Pr3+ ions, a negative value of the Weiss temperature suggests antiferromagnetic interactions in PrNi6Si6. Magnetization measurements confirm that PrNi₆Si₆ orders antiferromagnetically (AFM) below a Néel temperature (TN) of 9 K. The Ni atoms contribute negligibly to the magnetic properties of this phase. The specific heat of PrNi₆Si₆ is approximately 0.42 J K  − 1  g − 1. Measurements of electric and thermal transport reveal that PrNi₆Si₆ exhibits metallic behavior across a wide temperature range of 2–900 K, accompanied by a relatively low thermal conductivity of around 6 W K − 1 m − 1 at room temperature. Such properties, together with its high-temperature refractory behavior, make PrNi₆Si₆ worthy of consideration in technological applications where fairly good electrical conductivity should be accompanied by a limited thermal conductivity."}],"citation":{"ista":"Singh S, Provino A, Pallecchi I, Caglieris F, Mödlinger M, Mele P, Latronico G, Takeuchi T, Manfrinetti P. 2025. The new PrNi6Si6 intermetallic: From crystal structure to thermal and electrical transport properties across a wide temperature range (2–900 K). Journal of Materials Science. 60, 100051.","short":"S. Singh, A. Provino, I. Pallecchi, F. Caglieris, M. Mödlinger, P. Mele, G. Latronico, T. Takeuchi, P. Manfrinetti, Journal of Materials Science 60 (2025).","ieee":"S. Singh <i>et al.</i>, “The new PrNi6Si6 intermetallic: From crystal structure to thermal and electrical transport properties across a wide temperature range (2–900 K),” <i>Journal of Materials Science</i>, vol. 60. Springer Nature, 2025.","mla":"Singh, Saurabh, et al. “The New PrNi6Si6 Intermetallic: From Crystal Structure to Thermal and Electrical Transport Properties across a Wide Temperature Range (2–900 K).” <i>Journal of Materials Science</i>, vol. 60, 100051, Springer Nature, 2025, doi:<a href=\"https://doi.org/10.1007/s10853-024-10582-y\">10.1007/s10853-024-10582-y</a>.","ama":"Singh S, Provino A, Pallecchi I, et al. The new PrNi6Si6 intermetallic: From crystal structure to thermal and electrical transport properties across a wide temperature range (2–900 K). <i>Journal of Materials Science</i>. 2025;60. doi:<a href=\"https://doi.org/10.1007/s10853-024-10582-y\">10.1007/s10853-024-10582-y</a>","apa":"Singh, S., Provino, A., Pallecchi, I., Caglieris, F., Mödlinger, M., Mele, P., … Manfrinetti, P. (2025). The new PrNi6Si6 intermetallic: From crystal structure to thermal and electrical transport properties across a wide temperature range (2–900 K). <i>Journal of Materials Science</i>. Springer Nature. <a href=\"https://doi.org/10.1007/s10853-024-10582-y\">https://doi.org/10.1007/s10853-024-10582-y</a>","chicago":"Singh, Saurabh, A. Provino, I. Pallecchi, F. Caglieris, M. Mödlinger, P. Mele, G. Latronico, T. Takeuchi, and P. Manfrinetti. “The New PrNi6Si6 Intermetallic: From Crystal Structure to Thermal and Electrical Transport Properties across a Wide Temperature Range (2–900 K).” <i>Journal of Materials Science</i>. Springer Nature, 2025. <a href=\"https://doi.org/10.1007/s10853-024-10582-y\">https://doi.org/10.1007/s10853-024-10582-y</a>."},"user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","date_updated":"2025-03-10T06:53:16Z","publication":"Journal of Materials Science","scopus_import":"1","publication_identifier":{"eissn":["1573-4803"],"issn":["0022-2461"]},"OA_type":"closed access","language":[{"iso":"eng"}]},{"user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","date_updated":"2022-08-11T09:34:39Z","citation":{"short":"K.C. Lukas, G. Joshi, K.A. Modic, Z.F. Ren, C.P. Opeil, Journal of Materials Science 47 (2012) 5729–5734.","ieee":"K. C. Lukas, G. Joshi, K. A. Modic, Z. F. Ren, and C. P. Opeil, “Thermoelectric properties of Ho-doped Bi0.88Sb0.12,” <i>Journal of Materials Science</i>, vol. 47, no. 15. Springer Nature, pp. 5729–5734, 2012.","ista":"Lukas KC, Joshi G, Modic KA, Ren ZF, Opeil CP. 2012. Thermoelectric properties of Ho-doped Bi0.88Sb0.12. Journal of Materials Science. 47(15), 5729–5734.","mla":"Lukas, K. C., et al. “Thermoelectric Properties of Ho-Doped Bi0.88Sb0.12.” <i>Journal of Materials Science</i>, vol. 47, no. 15, Springer Nature, 2012, pp. 5729–34, doi:<a href=\"https://doi.org/10.1007/s10853-012-6463-6\">10.1007/s10853-012-6463-6</a>.","ama":"Lukas KC, Joshi G, Modic KA, Ren ZF, Opeil CP. Thermoelectric properties of Ho-doped Bi0.88Sb0.12. <i>Journal of Materials Science</i>. 2012;47(15):5729-5734. doi:<a href=\"https://doi.org/10.1007/s10853-012-6463-6\">10.1007/s10853-012-6463-6</a>","apa":"Lukas, K. C., Joshi, G., Modic, K. A., Ren, Z. F., &#38; Opeil, C. P. (2012). Thermoelectric properties of Ho-doped Bi0.88Sb0.12. <i>Journal of Materials Science</i>. Springer Nature. <a href=\"https://doi.org/10.1007/s10853-012-6463-6\">https://doi.org/10.1007/s10853-012-6463-6</a>","chicago":"Lukas, K. C., G. Joshi, Kimberly A Modic, Z. F. Ren, and C. P. Opeil. “Thermoelectric Properties of Ho-Doped Bi0.88Sb0.12.” <i>Journal of Materials Science</i>. Springer Nature, 2012. <a href=\"https://doi.org/10.1007/s10853-012-6463-6\">https://doi.org/10.1007/s10853-012-6463-6</a>."},"page":"5729-5734","abstract":[{"text":"The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1 % Ho increases the maximum ZT to 0.31 at 221 K and the 3 % doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.","lang":"eng"}],"extern":"1","article_type":"original","type":"journal_article","oa_version":"Preprint","date_created":"2022-08-08T08:28:20Z","status":"public","author":[{"first_name":"K. C.","last_name":"Lukas","full_name":"Lukas, K. C."},{"last_name":"Joshi","first_name":"G.","full_name":"Joshi, G."},{"id":"13C26AC0-EB69-11E9-87C6-5F3BE6697425","first_name":"Kimberly A","last_name":"Modic","full_name":"Modic, Kimberly A","orcid":"0000-0001-9760-3147"},{"full_name":"Ren, Z. F.","first_name":"Z. F.","last_name":"Ren"},{"full_name":"Opeil, C. P.","first_name":"C. P.","last_name":"Opeil"}],"_id":"11751","title":"Thermoelectric properties of Ho-doped Bi0.88Sb0.12","language":[{"iso":"eng"}],"publication_identifier":{"eissn":["1573-4803"],"issn":["0022-2461"]},"issue":"15","scopus_import":"1","publication":"Journal of Materials Science","arxiv":1,"fulldoi":"https://doi.org/10.1007/s10853-012-6463-6","article_processing_charge":"No","date_published":"2012-08-01T00:00:00Z","intvolume":"        47","year":"2012","quality_controlled":"1","publication_status":"published","doi":"10.1007/s10853-012-6463-6","volume":47,"month":"08","publisher":"Springer Nature","external_id":{"arxiv":["1201.6304"]},"day":"01"},{"oa_version":"None","publication_status":"published","type":"journal_article","quality_controlled":"1","article_type":"original","year":"2012","abstract":[{"lang":"eng","text":"The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1 % Ho increases the maximum ZT to 0.31 at 221 K and the 3 % doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K."}],"extern":"1","intvolume":"        47","title":"Thermoelectric properties of Ho-doped Bi0.88Sb0.12","_id":"7074","author":[{"last_name":"Lukas","first_name":"K. C.","full_name":"Lukas, K. C."},{"first_name":"G.","last_name":"Joshi","full_name":"Joshi, G."},{"last_name":"Modic","first_name":"Kimberly A","id":"13C26AC0-EB69-11E9-87C6-5F3BE6697425","full_name":"Modic, Kimberly A","orcid":"0000-0001-9760-3147"},{"last_name":"Ren","first_name":"Z. F.","full_name":"Ren, Z. F."},{"last_name":"Opeil","first_name":"C. P.","full_name":"Opeil, C. P."}],"status":"public","date_created":"2019-11-19T13:36:54Z","date_updated":"2021-01-12T08:11:43Z","fulldoi":"https://doi.org/10.1007/s10853-012-6463-6","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","date_published":"2012-08-01T00:00:00Z","article_processing_charge":"No","page":"5729-5734","citation":{"chicago":"Lukas, K. C., G. Joshi, Kimberly A Modic, Z. F. Ren, and C. P. Opeil. “Thermoelectric Properties of Ho-Doped Bi0.88Sb0.12.” <i>Journal of Materials Science</i>. Springer Nature, 2012. <a href=\"https://doi.org/10.1007/s10853-012-6463-6\">https://doi.org/10.1007/s10853-012-6463-6</a>.","apa":"Lukas, K. C., Joshi, G., Modic, K. A., Ren, Z. F., &#38; Opeil, C. P. (2012). Thermoelectric properties of Ho-doped Bi0.88Sb0.12. <i>Journal of Materials Science</i>. Springer Nature. <a href=\"https://doi.org/10.1007/s10853-012-6463-6\">https://doi.org/10.1007/s10853-012-6463-6</a>","ama":"Lukas KC, Joshi G, Modic KA, Ren ZF, Opeil CP. Thermoelectric properties of Ho-doped Bi0.88Sb0.12. <i>Journal of Materials Science</i>. 2012;47(15):5729-5734. doi:<a href=\"https://doi.org/10.1007/s10853-012-6463-6\">10.1007/s10853-012-6463-6</a>","mla":"Lukas, K. C., et al. “Thermoelectric Properties of Ho-Doped Bi0.88Sb0.12.” <i>Journal of Materials Science</i>, vol. 47, no. 15, Springer Nature, 2012, pp. 5729–34, doi:<a href=\"https://doi.org/10.1007/s10853-012-6463-6\">10.1007/s10853-012-6463-6</a>.","short":"K.C. Lukas, G. Joshi, K.A. Modic, Z.F. Ren, C.P. Opeil, Journal of Materials Science 47 (2012) 5729–5734.","ieee":"K. C. Lukas, G. Joshi, K. A. Modic, Z. F. Ren, and C. P. Opeil, “Thermoelectric properties of Ho-doped Bi0.88Sb0.12,” <i>Journal of Materials Science</i>, vol. 47, no. 15. Springer Nature, pp. 5729–5734, 2012.","ista":"Lukas KC, Joshi G, Modic KA, Ren ZF, Opeil CP. 2012. Thermoelectric properties of Ho-doped Bi0.88Sb0.12. Journal of Materials Science. 47(15), 5729–5734."},"publisher":"Springer Nature","month":"08","publication_identifier":{"eissn":["1573-4803"],"issn":["0022-2461"]},"day":"01","publication":"Journal of Materials Science","issue":"15","volume":47,"language":[{"iso":"eng"}],"doi":"10.1007/s10853-012-6463-6"}]