---
OA_place: repository
OA_type: green
_id: '8039'
abstract:
- lang: eng
  text: In the present work, we report a solution-based strategy to produce crystallographically
    textured SnSe bulk nanomaterials and printed layers with optimized thermoelectric
    performance in the direction normal to the substrate. Our strategy is based on
    the formulation of a molecular precursor that can be continuously decomposed to
    produce a SnSe powder or printed into predefined patterns. The precursor formulation
    and decomposition conditions are optimized to produce pure phase 2D SnSe nanoplates.
    The printed layer and the bulk material obtained after hot press displays a clear
    preferential orientation of the crystallographic domains, resulting in an ultralow
    thermal conductivity of 0.55 W m–1 K–1 in the direction normal to the substrate.
    Such textured nanomaterials present highly anisotropic properties with the best
    thermoelectric performance in plane, i.e., in the directions parallel to the substrate,
    which coincide with the crystallographic bc plane of SnSe. This is an unfortunate
    characteristic because thermoelectric devices are designed to create/harvest temperature
    gradients in the direction normal to the substrate. We further demonstrate that
    this limitation can be overcome with the introduction of small amounts of tellurium
    in the precursor. The presence of tellurium allows one to reduce the band gap
    and increase both the charge carrier concentration and the mobility, especially
    the cross plane, with a minimal decrease of the Seebeck coefficient. These effects
    translate into record out of plane ZT values at 800 K.
article_processing_charge: No
article_type: original
author:
- first_name: Yu
  full_name: Zhang, Yu
  last_name: Zhang
- first_name: Yu
  full_name: Liu, Yu
  id: 2A70014E-F248-11E8-B48F-1D18A9856A87
  last_name: Liu
  orcid: 0000-0001-7313-6740
- first_name: Congcong
  full_name: Xing, Congcong
  last_name: Xing
- first_name: Ting
  full_name: Zhang, Ting
  last_name: Zhang
- first_name: Mengyao
  full_name: Li, Mengyao
  last_name: Li
- first_name: Mercè
  full_name: Pacios, Mercè
  last_name: Pacios
- first_name: Xiaoting
  full_name: Yu, Xiaoting
  last_name: Yu
- first_name: Jordi
  full_name: Arbiol, Jordi
  last_name: Arbiol
- first_name: Jordi
  full_name: Llorca, Jordi
  last_name: Llorca
- first_name: Doris
  full_name: Cadavid, Doris
  last_name: Cadavid
- first_name: Maria
  full_name: Ibáñez, Maria
  id: 43C61214-F248-11E8-B48F-1D18A9856A87
  last_name: Ibáñez
  orcid: 0000-0001-5013-2843
- first_name: Andreu
  full_name: Cabot, Andreu
  last_name: Cabot
citation:
  ama: Zhang Y, Liu Y, Xing C, et al. Tin selenide molecular precursor for the solution
    processing of thermoelectric materials and devices. <i>ACS Applied Materials and
    Interfaces</i>. 2020;12(24):27104-27111. doi:<a href="https://doi.org/10.1021/acsami.0c04331">10.1021/acsami.0c04331</a>
  apa: Zhang, Y., Liu, Y., Xing, C., Zhang, T., Li, M., Pacios, M., … Cabot, A. (2020).
    Tin selenide molecular precursor for the solution processing of thermoelectric
    materials and devices. <i>ACS Applied Materials and Interfaces</i>. American Chemical
    Society. <a href="https://doi.org/10.1021/acsami.0c04331">https://doi.org/10.1021/acsami.0c04331</a>
  chicago: Zhang, Yu, Yu Liu, Congcong Xing, Ting Zhang, Mengyao Li, Mercè Pacios,
    Xiaoting Yu, et al. “Tin Selenide Molecular Precursor for the Solution Processing
    of Thermoelectric Materials and Devices.” <i>ACS Applied Materials and Interfaces</i>.
    American Chemical Society, 2020. <a href="https://doi.org/10.1021/acsami.0c04331">https://doi.org/10.1021/acsami.0c04331</a>.
  ieee: Y. Zhang <i>et al.</i>, “Tin selenide molecular precursor for the solution
    processing of thermoelectric materials and devices,” <i>ACS Applied Materials
    and Interfaces</i>, vol. 12, no. 24. American Chemical Society, pp. 27104–27111,
    2020.
  ista: Zhang Y, Liu Y, Xing C, Zhang T, Li M, Pacios M, Yu X, Arbiol J, Llorca J,
    Cadavid D, Ibáñez M, Cabot A. 2020. Tin selenide molecular precursor for the solution
    processing of thermoelectric materials and devices. ACS Applied Materials and
    Interfaces. 12(24), 27104–27111.
  mla: Zhang, Yu, et al. “Tin Selenide Molecular Precursor for the Solution Processing
    of Thermoelectric Materials and Devices.” <i>ACS Applied Materials and Interfaces</i>,
    vol. 12, no. 24, American Chemical Society, 2020, pp. 27104–11, doi:<a href="https://doi.org/10.1021/acsami.0c04331">10.1021/acsami.0c04331</a>.
  short: Y. Zhang, Y. Liu, C. Xing, T. Zhang, M. Li, M. Pacios, X. Yu, J. Arbiol,
    J. Llorca, D. Cadavid, M. Ibáñez, A. Cabot, ACS Applied Materials and Interfaces
    12 (2020) 27104–27111.
corr_author: '1'
date_created: 2020-06-29T07:59:35Z
date_published: 2020-06-17T00:00:00Z
date_updated: 2025-04-24T11:49:17Z
day: '17'
department:
- _id: MaIb
doi: 10.1021/acsami.0c04331
ec_funded: 1
external_id:
  isi:
  - '000542925300032'
  pmid:
  - '32437128'
intvolume: '        12'
isi: 1
issue: '24'
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://ddd.uab.cat/pub/artpub/2020/235998/acsapplmaterinterfaces_a2020v12np27104pp.pdf
month: '06'
oa: 1
oa_version: Submitted Version
page: 27104-27111
pmid: 1
project:
- _id: 260C2330-B435-11E9-9278-68D0E5697425
  call_identifier: H2020
  grant_number: '754411'
  name: ISTplus - Postdoctoral Fellowships
publication: ACS Applied Materials and Interfaces
publication_identifier:
  eissn:
  - '19448252'
publication_status: published
publisher: American Chemical Society
quality_controlled: '1'
scopus_import: '1'
status: public
title: Tin selenide molecular precursor for the solution processing of thermoelectric
  materials and devices
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 12
year: '2020'
...