@article{17235,
  abstract     = {We demonstrate ion irradiation by argon or gallium as a wafer-scale post-processing method to increase disorder in superconducting thin films. We study several widely used superconductors, both single-elements and compounds. We show that ion irradiation increases normal-state resistivity in all our films, which is expected to enable tuning their superconducting properties, for example, toward a higher kinetic inductance. We observe an increase in superconducting transition temperature for Al and MoSi and a decrease for Nb, NbN, and TiN. In MoSi, ion irradiation also improves the mixing of the two materials. We demonstrate the fabrication of an amorphous and homogeneous film of MoSi with uniform thickness, which is promising, for example, for superconducting nanowire single-photon detectors.},
  author       = {Kohopää, Katja and Ronzani, Alberto and Jabdaraghi, Robab Najafi and Bera, Arijit and Ribeiro, Mário and Hazra, Dibyendu and Senior, Jorden L and Prunnila, Mika and Govenius, Joonas and Lehtinen, Janne S. and Kemppinen, Antti},
  issn         = {2166-532X},
  journal      = {APL Materials},
  number       = {7},
  publisher    = {AIP Publishing},
  title        = {{Effect of ion irradiation on superconducting thin films}},
  doi          = {10.1063/5.0202851},
  volume       = {12},
  year         = {2024},
}

@article{383,
  abstract     = {In the quest for more efficient thermoelectric material able to convert thermal to electrical energy and vice versa, composites that combine a semiconductor host having a large Seebeck coefficient with metal nanodomains that provide phonon scattering and free charge carriers are particularly appealing. Here, we present our experimental results on the thermal and electrical transport properties of PbS-metal composites produced by a versatile particle blending procedure, and where the metal work function allows injecting electrons to the intrinsic PbS host. We compare the thermoelectric performance of composites with microcrystalline or nanocrystalline structures. The electrical conductivity of the microcrystalline host can be increased several orders of magnitude with the metal inclusion, while relatively high Seebeck coefficient can be simultaneously conserved. On the other hand, in nanostructured materials, the host crystallites are not able to sustain a band bending at its interface with the metal, becoming flooded with electrons. This translates into even higher electrical conductivities than the microcrystalline material, but at the expense of lower Seebeck coefficient values.},
  author       = {Liu, Yu and Cadavid, Doris and Ibanez Sabate, Maria and Ortega, Silvia and Márti Sánchez, Sara and Dobrozhan, Oleksander and Kovalenko, Maksym and Arbiol, Jordi and Cabot, Andreu},
  issn         = {2166-532X},
  journal      = {Applied Physics Letters},
  number       = {10},
  publisher    = {American Institute of Physics},
  title        = {{Thermoelectric properties of semiconductor-metal composites produced by particle blending}},
  doi          = {10.1063/1.4961679},
  volume       = {4},
  year         = {2016},
}