---
_id: '13255'
abstract:
- lang: eng
  text: Focused ion beams perfectly suit for patterning two-dimensional (2D) materials,
    but the optimization of irradiation parameters requires full microscopic understanding
    of defect production mechanisms. In contrast to freestanding 2D systems, the details
    of damage creation in supported 2D materials are not fully understood, whereas
    the majority of experiments have been carried out for 2D targets deposited on
    substrates. Here, we suggest a universal and computationally efficient scheme
    to model the irradiation of supported 2D materials, which combines analytical
    potential molecular dynamics with Monte Carlo simulations and makes it possible
    to independently assess the contributions to the damage from backscattered ions
    and atoms sputtered from the substrate. Using the scheme, we study the defect
    production in graphene and MoS2 sheets, which are the two most important and wide-spread
    2D materials, deposited on a SiO2 substrate. For helium and neon ions with a wide
    range of initial ion energies including those used in a commercial helium ion
    microscope (HIM), we demonstrate that depending on the ion energy and mass, the
    defect production in 2D systems can be dominated by backscattered ions and sputtered
    substrate atoms rather than by the direct ion impacts and that the amount of damage
    in 2D materials heavily depends on whether a substrate is present or not. We also
    study the factors which limit the spatial resolution of the patterning process.
    Our results, which agree well with the available experimental data, provide not
    only insights into defect production but also quantitative information, which
    can be used for the minimization of damage during imaging in HIM or optimization
    of the patterning process.
article_processing_charge: No
article_type: original
author:
- first_name: Silvan
  full_name: Kretschmer, Silvan
  last_name: Kretschmer
- first_name: Mikhail
  full_name: Maslov, Mikhail
  id: 2E65BB0E-F248-11E8-B48F-1D18A9856A87
  last_name: Maslov
  orcid: 0000-0003-4074-2570
- first_name: Sadegh
  full_name: Ghaderzadeh, Sadegh
  last_name: Ghaderzadeh
- first_name: Mahdi
  full_name: Ghorbani-Asl, Mahdi
  last_name: Ghorbani-Asl
- first_name: Gregor
  full_name: Hlawacek, Gregor
  last_name: Hlawacek
- first_name: Arkady V.
  full_name: Krasheninnikov, Arkady V.
  last_name: Krasheninnikov
citation:
  ama: 'Kretschmer S, Maslov M, Ghaderzadeh S, Ghorbani-Asl M, Hlawacek G, Krasheninnikov
    AV. Supported two-dimensional materials under ion irradiation: The substrate governs
    defect production. <i>ACS Applied Materials &#38; Interfaces</i>. 2018;10(36):30827-30836.
    doi:<a href="https://doi.org/10.1021/acsami.8b08471">10.1021/acsami.8b08471</a>'
  apa: 'Kretschmer, S., Maslov, M., Ghaderzadeh, S., Ghorbani-Asl, M., Hlawacek, G.,
    &#38; Krasheninnikov, A. V. (2018). Supported two-dimensional materials under
    ion irradiation: The substrate governs defect production. <i>ACS Applied Materials
    &#38; Interfaces</i>. American Chemical Society. <a href="https://doi.org/10.1021/acsami.8b08471">https://doi.org/10.1021/acsami.8b08471</a>'
  chicago: 'Kretschmer, Silvan, Mikhail Maslov, Sadegh Ghaderzadeh, Mahdi Ghorbani-Asl,
    Gregor Hlawacek, and Arkady V. Krasheninnikov. “Supported Two-Dimensional Materials
    under Ion Irradiation: The Substrate Governs Defect Production.” <i>ACS Applied
    Materials &#38; Interfaces</i>. American Chemical Society, 2018. <a href="https://doi.org/10.1021/acsami.8b08471">https://doi.org/10.1021/acsami.8b08471</a>.'
  ieee: 'S. Kretschmer, M. Maslov, S. Ghaderzadeh, M. Ghorbani-Asl, G. Hlawacek, and
    A. V. Krasheninnikov, “Supported two-dimensional materials under ion irradiation:
    The substrate governs defect production,” <i>ACS Applied Materials &#38; Interfaces</i>,
    vol. 10, no. 36. American Chemical Society, pp. 30827–30836, 2018.'
  ista: 'Kretschmer S, Maslov M, Ghaderzadeh S, Ghorbani-Asl M, Hlawacek G, Krasheninnikov
    AV. 2018. Supported two-dimensional materials under ion irradiation: The substrate
    governs defect production. ACS Applied Materials &#38; Interfaces. 10(36), 30827–30836.'
  mla: 'Kretschmer, Silvan, et al. “Supported Two-Dimensional Materials under Ion
    Irradiation: The Substrate Governs Defect Production.” <i>ACS Applied Materials
    &#38; Interfaces</i>, vol. 10, no. 36, American Chemical Society, 2018, pp. 30827–36,
    doi:<a href="https://doi.org/10.1021/acsami.8b08471">10.1021/acsami.8b08471</a>.'
  short: S. Kretschmer, M. Maslov, S. Ghaderzadeh, M. Ghorbani-Asl, G. Hlawacek, A.V.
    Krasheninnikov, ACS Applied Materials &#38; Interfaces 10 (2018) 30827–30836.
date_created: 2023-07-21T11:43:00Z
date_published: 2018-08-17T00:00:00Z
date_updated: 2023-08-01T07:18:30Z
day: '17'
doi: 10.1021/acsami.8b08471
extern: '1'
external_id:
  pmid:
  - '30117320'
intvolume: '        10'
issue: '36'
keyword:
- General Materials Science
language:
- iso: eng
month: '08'
oa_version: None
page: 30827-30836
pmid: 1
publication: ACS Applied Materials & Interfaces
publication_identifier:
  issn:
  - 1944-8244
  - 1944-8252
publication_status: published
publisher: American Chemical Society
quality_controlled: '1'
status: public
title: 'Supported two-dimensional materials under ion irradiation: The substrate governs
  defect production'
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 10
year: '2018'
...