@article{12278,
  abstract     = {Mercury telluride (HgTe) thin films with a critical thickness of 6.5 nm are predicted to possess a gapless Dirac-like band structure. We report a comprehensive study on gated and optically doped samples by magnetooptical spectroscopy in the THz range. The quasi-classical analysis of the cyclotron resonance allowed the mapping of the band dispersion of Dirac charge carriers in a broad range of electron and hole doping. A smooth transition through the charge neutrality point between Dirac holes and electrons was observed. An additional peak coming from a second type of holes with an almost density-independent mass of around 0.04m0 was detected in the hole-doping range and attributed to an asymmetric spin splitting of the Dirac cone. Spectroscopic evidence for disorder-induced band energy fluctuations could not be detected in present cyclotron resonance experiments.},
  author       = {Shuvaev, Alexey and Dziom, Uladzislau and Gospodarič, Jan and Novik, Elena G. and Dobretsova, Alena A. and Mikhailov, Nikolay N. and Kvon, Ze Don and Pimenov, Andrei},
  issn         = {2079-4991},
  journal      = {Nanomaterials},
  keywords     = {General Materials Science, General Chemical Engineering},
  number       = {14},
  publisher    = {MDPI},
  title        = {{Band structure near the Dirac Point in HgTe quantum wells with critical thickness}},
  doi          = {10.3390/nano12142492},
  volume       = {12},
  year         = {2022},
}

@article{10858,
  abstract     = {The cost-effective conversion of low-grade heat into electricity using thermoelectric devices requires developing alternative materials and material processing technologies able to reduce the currently high device manufacturing costs. In this direction, thermoelectric materials that do not rely on rare or toxic elements such as tellurium or lead need to be produced using high-throughput technologies not involving high temperatures and long processes. Bi2Se3 is an obvious possible Te-free alternative to Bi2Te3 for ambient temperature thermoelectric applications, but its performance is still low for practical applications, and additional efforts toward finding proper dopants are required. Here, we report a scalable method to produce Bi2Se3 nanosheets at low synthesis temperatures. We studied the influence of different dopants on the thermoelectric properties of this material. Among the elements tested, we demonstrated that Sn doping resulted in the best performance. Sn incorporation resulted in a significant improvement to the Bi2Se3 Seebeck coefficient and a reduction in the thermal conductivity in the direction of the hot-press axis, resulting in an overall 60% improvement in the thermoelectric figure of merit of Bi2Se3.},
  author       = {Li, Mengyao and Zhang, Yu and Zhang, Ting and Zuo, Yong and Xiao, Ke and Arbiol, Jordi and Llorca, Jordi and Liu, Yu and Cabot, Andreu},
  issn         = {2079-4991},
  journal      = {Nanomaterials},
  keywords     = {General Materials Science, General Chemical Engineering},
  number       = {7},
  publisher    = {MDPI},
  title        = {{Enhanced thermoelectric performance of n-type Bi2Se3 nanosheets through Sn doping}},
  doi          = {10.3390/nano11071827},
  volume       = {11},
  year         = {2021},
}