[{"publication_status":"published","department":[{"_id":"GeKa"}],"publisher":"Springer Nature","year":"2024","acknowledgement":"We acknowledge Alexander Brinkmann, Alessandro Crippa, Francesco Giazotto, Andrew Higginbotham, Andrea Iorio, Giordano Scappucci, Christian Schonenberger, and Lukas Splitthoff for helpful discussions. We thank Marcel Verheijen for the support in the TEM analysis. This research and related results were made possible with the support of the NOMIS\r\nFoundation. It was supported by the Scientific Service Units of ISTA through resources provided by the MIBA Machine Shop and the nanofabrication facility, the European Union’s Horizon 2020 research andinnovation programme under Grant Agreement No 862046, the HORIZONRIA\r\n101069515 project, the European Innovation Council Pathfinder grant no. 101115315 (QuKiT), and the FWF Projects #P-32235, #P-36507 and #F-8606. For the purpose of open access, the authors have applied a CC BY public copyright licence to any Author Accepted Manuscript version arising from this submission. R.S.S. acknowledges Spanish CM “Talento Program\"\r\nProject No. 2022-T1/IND-24070. J.J. acknowledges European Research Council TOCINA 834290.","pmid":1,"date_updated":"2024-01-17T11:07:55Z","date_created":"2024-01-14T23:00:56Z","volume":15,"author":[{"id":"C0BB2FAC-D767-11E9-B658-BC13E6697425","last_name":"Valentini","first_name":"Marco","full_name":"Valentini, Marco"},{"id":"71616374-A8E9-11E9-A7CA-09ECE5697425","last_name":"Sagi","first_name":"Oliver","full_name":"Sagi, Oliver"},{"full_name":"Baghumyan, Levon","id":"7aa1f788-b527-11ee-aa9e-e6111a79e0c7","first_name":"Levon","last_name":"Baghumyan"},{"id":"a0ece13c-b527-11ee-929d-bad130106eee","last_name":"de Gijsel","first_name":"Thijs","full_name":"de Gijsel, Thijs"},{"full_name":"Jung, Jason","first_name":"Jason","last_name":"Jung","id":"4C9ACE7A-F248-11E8-B48F-1D18A9856A87"},{"first_name":"Stefano","last_name":"Calcaterra","full_name":"Calcaterra, Stefano"},{"first_name":"Andrea","last_name":"Ballabio","full_name":"Ballabio, Andrea"},{"full_name":"Aguilera Servin, Juan L","last_name":"Aguilera Servin","first_name":"Juan L","orcid":"0000-0002-2862-8372","id":"2A67C376-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Aggarwal, Kushagra","orcid":"0000-0001-9985-9293","id":"b22ab905-3539-11eb-84c3-fc159dcd79cb","last_name":"Aggarwal","first_name":"Kushagra"},{"id":"396A1950-F248-11E8-B48F-1D18A9856A87","first_name":"Marian","last_name":"Janik","full_name":"Janik, Marian"},{"full_name":"Adletzberger, Thomas","last_name":"Adletzberger","first_name":"Thomas","id":"38756BB2-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Seoane Souto, Rubén","first_name":"Rubén","last_name":"Seoane Souto"},{"full_name":"Leijnse, Martin","last_name":"Leijnse","first_name":"Martin"},{"last_name":"Danon","first_name":"Jeroen","full_name":"Danon, Jeroen"},{"last_name":"Schrade","first_name":"Constantin","full_name":"Schrade, Constantin"},{"full_name":"Bakkers, Erik","last_name":"Bakkers","first_name":"Erik"},{"full_name":"Chrastina, Daniel","last_name":"Chrastina","first_name":"Daniel"},{"full_name":"Isella, Giovanni","first_name":"Giovanni","last_name":"Isella"},{"full_name":"Katsaros, Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","first_name":"Georgios","last_name":"Katsaros"}],"article_number":"169","file_date_updated":"2024-01-17T11:03:00Z","ec_funded":1,"quality_controlled":"1","project":[{"call_identifier":"H2020","name":"TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS","grant_number":"862046","_id":"237E5020-32DE-11EA-91FC-C7463DDC885E"},{"_id":"34c0acea-11ca-11ed-8bc3-8775e10fd452","grant_number":"101069515","name":"Integrated GermaNIum quanTum tEchnology"},{"name":"Quantum bits with Kitaev Transmons","_id":"bdc2ca30-d553-11ed-ba76-cf164a5bb811","grant_number":"101115315"},{"call_identifier":"FWF","name":"Towards scalable hut wire quantum devices","grant_number":"P32235","_id":"237B3DA4-32DE-11EA-91FC-C7463DDC885E"},{"grant_number":"P36507","_id":"bd8bd29e-d553-11ed-ba76-f0070d4b237a","name":"Merging spin and superconducting qubits in planar Ge"},{"_id":"34a66131-11ca-11ed-8bc3-a31681c6b03e","grant_number":"F8606","name":"Conventional and unconventional topological superconductors"}],"tmp":{"name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png"},"external_id":{"pmid":["38167818"]},"oa":1,"acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"language":[{"iso":"eng"}],"doi":"10.1038/s41467-023-44114-0","month":"01","publication_identifier":{"eissn":["2041-1723"]},"title":"Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium","ddc":["530"],"status":"public","intvolume":" 15","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","_id":"14793","file":[{"date_created":"2024-01-17T11:03:00Z","date_updated":"2024-01-17T11:03:00Z","checksum":"ef79173b45eeaf984ffa61ef2f8a52ab","success":1,"relation":"main_file","file_id":"14825","file_size":2336595,"content_type":"application/pdf","creator":"dernst","file_name":"2024_NatureComm_Valentini.pdf","access_level":"open_access"}],"oa_version":"Published Version","type":"journal_article","abstract":[{"lang":"eng","text":"Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a sin(2y) CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with ≈ 100% efficiency. The reported results open up the path towards integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on the same silicon technology compatible platform."}],"article_type":"original","publication":"Nature Communications","citation":{"chicago":"Valentini, Marco, Oliver Sagi, Levon Baghumyan, Thijs de Gijsel, Jason Jung, Stefano Calcaterra, Andrea Ballabio, et al. “Parity-Conserving Cooper-Pair Transport and Ideal Superconducting Diode in Planar Germanium.” Nature Communications. Springer Nature, 2024. https://doi.org/10.1038/s41467-023-44114-0.","mla":"Valentini, Marco, et al. “Parity-Conserving Cooper-Pair Transport and Ideal Superconducting Diode in Planar Germanium.” Nature Communications, vol. 15, 169, Springer Nature, 2024, doi:10.1038/s41467-023-44114-0.","short":"M. Valentini, O. Sagi, L. Baghumyan, T. de Gijsel, J. Jung, S. Calcaterra, A. Ballabio, J.L. Aguilera Servin, K. Aggarwal, M. Janik, T. Adletzberger, R. Seoane Souto, M. Leijnse, J. Danon, C. Schrade, E. Bakkers, D. Chrastina, G. Isella, G. Katsaros, Nature Communications 15 (2024).","ista":"Valentini M, Sagi O, Baghumyan L, de Gijsel T, Jung J, Calcaterra S, Ballabio A, Aguilera Servin JL, Aggarwal K, Janik M, Adletzberger T, Seoane Souto R, Leijnse M, Danon J, Schrade C, Bakkers E, Chrastina D, Isella G, Katsaros G. 2024. Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium. Nature Communications. 15, 169.","apa":"Valentini, M., Sagi, O., Baghumyan, L., de Gijsel, T., Jung, J., Calcaterra, S., … Katsaros, G. (2024). Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium. Nature Communications. Springer Nature. https://doi.org/10.1038/s41467-023-44114-0","ieee":"M. Valentini et al., “Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium,” Nature Communications, vol. 15. Springer Nature, 2024.","ama":"Valentini M, Sagi O, Baghumyan L, et al. Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium. Nature Communications. 2024;15. doi:10.1038/s41467-023-44114-0"},"date_published":"2024-01-02T00:00:00Z","scopus_import":"1","day":"02","has_accepted_license":"1","article_processing_charge":"Yes"},{"article_number":"108231","author":[{"last_name":"Shimura","first_name":"Yosuke","full_name":"Shimura, Yosuke"},{"full_name":"Godfrin, Clement","last_name":"Godfrin","first_name":"Clement"},{"last_name":"Hikavyy","first_name":"Andriy","full_name":"Hikavyy, Andriy"},{"full_name":"Li, Roy","last_name":"Li","first_name":"Roy"},{"first_name":"Juan L","last_name":"Aguilera Servin","id":"2A67C376-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-2862-8372","full_name":"Aguilera Servin, Juan L"},{"first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","full_name":"Katsaros, Georgios"},{"full_name":"Favia, Paola","last_name":"Favia","first_name":"Paola"},{"full_name":"Han, Han","first_name":"Han","last_name":"Han"},{"first_name":"Danny","last_name":"Wan","full_name":"Wan, Danny"},{"first_name":"Kristiaan","last_name":"de Greve","full_name":"de Greve, Kristiaan"},{"full_name":"Loo, Roger","last_name":"Loo","first_name":"Roger"}],"volume":174,"date_updated":"2024-02-26T10:36:35Z","date_created":"2024-02-22T14:10:40Z","acknowledgement":"The Ge project received funding from the European Union's Horizon Europe programme under the Grant Agreement 101069515 – IGNITE. Siltronic AG is acknowledged for providing the SRB wafers. This work was supported by Imec's Industrial Affiliation Program on Quantum Computing.","year":"2024","department":[{"_id":"GeKa"},{"_id":"NanoFab"}],"publisher":"Elsevier","publication_status":"epub_ahead","publication_identifier":{"issn":["1369-8001"]},"month":"02","doi":"10.1016/j.mssp.2024.108231","language":[{"iso":"eng"}],"tmp":{"name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png"},"oa":1,"main_file_link":[{"url":"https://doi.org/10.1016/j.mssp.2024.108231","open_access":"1"}],"project":[{"_id":"34c0acea-11ca-11ed-8bc3-8775e10fd452","grant_number":"101069515","name":"Integrated GermaNIum quanTum tEchnology"}],"quality_controlled":"1","issue":"5","abstract":[{"lang":"eng","text":"The epitaxial growth of a strained Ge layer, which is a promising candidate for the channel material of a hole spin qubit, has been demonstrated on 300 mm Si wafers using commercially available Si0.3Ge0.7 strain relaxed buffer (SRB) layers. The assessment of the layer and the interface qualities for a buried strained Ge layer embedded in Si0.3Ge0.7 layers is reported. The XRD reciprocal space mapping confirmed that the reduction of the growth temperature enables the 2-dimensional growth of the Ge layer fully strained with respect to the Si0.3Ge0.7. Nevertheless, dislocations at the top and/or bottom interface of the Ge layer were observed by means of electron channeling contrast imaging, suggesting the importance of the careful dislocation assessment. The interface abruptness does not depend on the selection of the precursor gases, but it is strongly influenced by the growth temperature which affects the coverage of the surface H-passivation. The mobility of 2.7 × 105 cm2/Vs is promising, while the low percolation density of 3 × 1010 /cm2 measured with a Hall-bar device at 7 K illustrates the high quality of the heterostructure thanks to the high Si0.3Ge0.7 SRB quality."}],"type":"journal_article","oa_version":"Published Version","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","_id":"15018","intvolume":" 174","status":"public","ddc":["530"],"title":"Compressively strained epitaxial Ge layers for quantum computing applications","has_accepted_license":"1","article_processing_charge":"No","day":"20","keyword":["Mechanical Engineering","Mechanics of Materials","Condensed Matter Physics","General Materials Science"],"date_published":"2024-02-20T00:00:00Z","citation":{"short":"Y. Shimura, C. Godfrin, A. Hikavyy, R. Li, J.L. Aguilera Servin, G. Katsaros, P. Favia, H. Han, D. Wan, K. de Greve, R. Loo, Materials Science in Semiconductor Processing 174 (2024).","mla":"Shimura, Yosuke, et al. “Compressively Strained Epitaxial Ge Layers for Quantum Computing Applications.” Materials Science in Semiconductor Processing, vol. 174, no. 5, 108231, Elsevier, 2024, doi:10.1016/j.mssp.2024.108231.","chicago":"Shimura, Yosuke, Clement Godfrin, Andriy Hikavyy, Roy Li, Juan L Aguilera Servin, Georgios Katsaros, Paola Favia, et al. “Compressively Strained Epitaxial Ge Layers for Quantum Computing Applications.” Materials Science in Semiconductor Processing. Elsevier, 2024. https://doi.org/10.1016/j.mssp.2024.108231.","ama":"Shimura Y, Godfrin C, Hikavyy A, et al. Compressively strained epitaxial Ge layers for quantum computing applications. Materials Science in Semiconductor Processing. 2024;174(5). doi:10.1016/j.mssp.2024.108231","apa":"Shimura, Y., Godfrin, C., Hikavyy, A., Li, R., Aguilera Servin, J. L., Katsaros, G., … Loo, R. (2024). Compressively strained epitaxial Ge layers for quantum computing applications. Materials Science in Semiconductor Processing. Elsevier. https://doi.org/10.1016/j.mssp.2024.108231","ieee":"Y. Shimura et al., “Compressively strained epitaxial Ge layers for quantum computing applications,” Materials Science in Semiconductor Processing, vol. 174, no. 5. Elsevier, 2024.","ista":"Shimura Y, Godfrin C, Hikavyy A, Li R, Aguilera Servin JL, Katsaros G, Favia P, Han H, Wan D, de Greve K, Loo R. 2024. Compressively strained epitaxial Ge layers for quantum computing applications. Materials Science in Semiconductor Processing. 174(5), 108231."},"publication":"Materials Science in Semiconductor Processing","article_type":"original"},{"abstract":[{"text":"Superconductor/semiconductor hybrid devices have attracted increasing\r\ninterest in the past years. Superconducting electronics aims to complement\r\nsemiconductor technology, while hybrid architectures are at the forefront of\r\nnew ideas such as topological superconductivity and protected qubits. In this\r\nwork, we engineer the induced superconductivity in two-dimensional germanium\r\nhole gas by varying the distance between the quantum well and the aluminum. We\r\ndemonstrate a hard superconducting gap and realize an electrically and flux\r\ntunable superconducting diode using a superconducting quantum interference\r\ndevice (SQUID). This allows to tune the current phase relation (CPR), to a\r\nregime where single Cooper pair tunneling is suppressed, creating a $ \\sin\r\n\\left( 2 \\varphi \\right)$ CPR. Shapiro experiments complement this\r\ninterpretation and the microwave drive allows to create a diode with $ \\approx\r\n100 \\%$ efficiency. The reported results open up the path towards monolithic\r\nintegration of spin qubit devices, microwave resonators and (protected)\r\nsuperconducting qubits on a silicon technology compatible platform.","lang":"eng"}],"type":"preprint","oa_version":"Preprint","_id":"13312","user_id":"8b945eb4-e2f2-11eb-945a-df72226e66a9","ddc":["530"],"title":"Radio frequency driven superconducting diode and parity conserving Cooper pair transport in a two-dimensional germanium hole gas","status":"public","article_processing_charge":"No","day":"13","keyword":["Mesoscale and Nanoscale Physics"],"date_published":"2023-06-13T00:00:00Z","citation":{"ama":"Valentini M, Sagi O, Baghumyan L, et al. Radio frequency driven superconducting diode and parity conserving Cooper pair transport in a two-dimensional germanium hole gas. arXiv. doi:10.48550/arXiv.2306.07109","ista":"Valentini M, Sagi O, Baghumyan L, Gijsel T de, Jung J, Calcaterra S, Ballabio A, Servin JA, Aggarwal K, Janik M, Adletzberger T, Souto RS, Leijnse M, Danon J, Schrade C, Bakkers E, Chrastina D, Isella G, Katsaros G. Radio frequency driven superconducting diode and parity conserving Cooper pair transport in a two-dimensional germanium hole gas. arXiv, 2306.07109.","ieee":"M. Valentini et al., “Radio frequency driven superconducting diode and parity conserving Cooper pair transport in a two-dimensional germanium hole gas,” arXiv. .","apa":"Valentini, M., Sagi, O., Baghumyan, L., Gijsel, T. de, Jung, J., Calcaterra, S., … Katsaros, G. (n.d.). Radio frequency driven superconducting diode and parity conserving Cooper pair transport in a two-dimensional germanium hole gas. arXiv. https://doi.org/10.48550/arXiv.2306.07109","mla":"Valentini, Marco, et al. “Radio Frequency Driven Superconducting Diode and Parity Conserving Cooper Pair Transport in a Two-Dimensional Germanium Hole Gas.” ArXiv, 2306.07109, doi:10.48550/arXiv.2306.07109.","short":"M. Valentini, O. Sagi, L. Baghumyan, T. de Gijsel, J. Jung, S. Calcaterra, A. Ballabio, J.A. Servin, K. Aggarwal, M. Janik, T. Adletzberger, R.S. Souto, M. Leijnse, J. Danon, C. Schrade, E. Bakkers, D. Chrastina, G. Isella, G. Katsaros, ArXiv (n.d.).","chicago":"Valentini, Marco, Oliver Sagi, Levon Baghumyan, Thijs de Gijsel, Jason Jung, Stefano Calcaterra, Andrea Ballabio, et al. “Radio Frequency Driven Superconducting Diode and Parity Conserving Cooper Pair Transport in a Two-Dimensional Germanium Hole Gas.” ArXiv, n.d. https://doi.org/10.48550/arXiv.2306.07109."},"publication":"arXiv","ec_funded":1,"article_number":"2306.07109","related_material":{"record":[{"id":"13286","relation":"dissertation_contains","status":"public"}]},"author":[{"first_name":"Marco","last_name":"Valentini","id":"C0BB2FAC-D767-11E9-B658-BC13E6697425","full_name":"Valentini, Marco"},{"full_name":"Sagi, Oliver","id":"71616374-A8E9-11E9-A7CA-09ECE5697425","first_name":"Oliver","last_name":"Sagi"},{"full_name":"Baghumyan, Levon","last_name":"Baghumyan","first_name":"Levon"},{"last_name":"Gijsel","first_name":"Thijs de","full_name":"Gijsel, Thijs de"},{"id":"4C9ACE7A-F248-11E8-B48F-1D18A9856A87","last_name":"Jung","first_name":"Jason","full_name":"Jung, Jason"},{"first_name":"Stefano","last_name":"Calcaterra","full_name":"Calcaterra, Stefano"},{"full_name":"Ballabio, Andrea","last_name":"Ballabio","first_name":"Andrea"},{"full_name":"Servin, Juan Aguilera","first_name":"Juan Aguilera","last_name":"Servin"},{"last_name":"Aggarwal","first_name":"Kushagra","orcid":"0000-0001-9985-9293","id":"b22ab905-3539-11eb-84c3-fc159dcd79cb","full_name":"Aggarwal, Kushagra"},{"full_name":"Janik, Marian","id":"396A1950-F248-11E8-B48F-1D18A9856A87","last_name":"Janik","first_name":"Marian"},{"last_name":"Adletzberger","first_name":"Thomas","id":"38756BB2-F248-11E8-B48F-1D18A9856A87","full_name":"Adletzberger, Thomas"},{"first_name":"Rubén Seoane","last_name":"Souto","full_name":"Souto, Rubén Seoane"},{"full_name":"Leijnse, Martin","first_name":"Martin","last_name":"Leijnse"},{"full_name":"Danon, Jeroen","last_name":"Danon","first_name":"Jeroen"},{"last_name":"Schrade","first_name":"Constantin","full_name":"Schrade, Constantin"},{"full_name":"Bakkers, Erik","first_name":"Erik","last_name":"Bakkers"},{"first_name":"Daniel","last_name":"Chrastina","full_name":"Chrastina, Daniel"},{"first_name":"Giovanni","last_name":"Isella","full_name":"Isella, Giovanni"},{"first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","full_name":"Katsaros, Georgios"}],"date_updated":"2024-02-07T07:52:32Z","date_created":"2023-07-26T11:17:20Z","acknowledgement":"The authors acknowledge Alexander Brinkmann, Alessandro Crippa, Andrew Higginbotham, Andrea Iorio, Giordano\r\nScappucci and Christian Schonenberger for helpful discussions. We thank Marcel Verheijen for the support in the\r\nTEM analysis. This research and related results were made\r\npossible with the support of the NOMIS Foundation. It was\r\nsupported by the Scientific Service Units of ISTA through resources provided by the MIBA Machine Shop and the\r\nnanofabrication facility, the European Union’s Horizon 2020\r\nresearch and innovation programme under Grant Agreement\r\nNo 862046, the HORIZON-RIA 101069515 project and the\r\nFWF Projects #P-32235, #P-36507 and #F-8606. R.S.S.\r\nacknowledges Spanish CM “Talento Program” Project No.\r\n2022-T1/IND-24070.","year":"2023","department":[{"_id":"GeKa"},{"_id":"M-Shop"}],"publication_status":"submitted","month":"06","doi":"10.48550/arXiv.2306.07109","language":[{"iso":"eng"}],"acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"tmp":{"name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png"},"external_id":{"arxiv":["2306.07109"]},"oa":1,"main_file_link":[{"open_access":"1","url":"https://doi.org/10.48550/arXiv.2306.07109"}],"project":[{"grant_number":"862046","_id":"237E5020-32DE-11EA-91FC-C7463DDC885E","call_identifier":"H2020","name":"TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS"},{"_id":"237B3DA4-32DE-11EA-91FC-C7463DDC885E","grant_number":"P32235","call_identifier":"FWF","name":"Towards scalable hut wire quantum devices"},{"name":"Merging spin and superconducting qubits in planar Ge","grant_number":"P36507","_id":"bd8bd29e-d553-11ed-ba76-f0070d4b237a"},{"_id":"34a66131-11ca-11ed-8bc3-a31681c6b03e","grant_number":"F8606","name":"Conventional and unconventional topological superconductors"},{"name":"Protected states of quantum matter","_id":"bd5b4ec5-d553-11ed-ba76-a6eedb083344"}]},{"type":"journal_article","issue":"12","abstract":[{"text":"The spin-orbit interaction permits to control the state of a spin qubit via electric fields. For holes it is particularly strong, allowing for fast all electrical qubit manipulation, and yet an in-depth understanding of this interaction in hole systems is missing. Here we investigate, experimentally and theoretically, the effect of the cubic Rashba spin-orbit interaction on the mixing of the spin states by studying singlet-triplet oscillations in a planar Ge hole double quantum dot. Landau-Zener sweeps at different magnetic field directions allow us to disentangle the effects of the spin-orbit induced spin-flip term from those caused by strongly site-dependent and anisotropic quantum dot g tensors. Our work, therefore, provides new insights into the hole spin-orbit interaction, necessary for optimizing future qubit experiments.","lang":"eng"}],"_id":"10920","user_id":"4359f0d1-fa6c-11eb-b949-802e58b17ae8","intvolume":" 128","ddc":["530"],"status":"public","title":"Dynamics of hole singlet-triplet qubits with large g-factor differences","oa_version":"Published Version","file":[{"file_name":"2022_PhysRevLetters_Jirovec.pdf","access_level":"open_access","creator":"dernst","file_size":1266515,"content_type":"application/pdf","file_id":"10928","relation":"main_file","date_updated":"2022-03-28T06:53:39Z","date_created":"2022-03-28T06:53:39Z","success":1,"checksum":"6e66ad548d18db9c131f304acbd5a1f4"}],"has_accepted_license":"1","article_processing_charge":"No","day":"24","citation":{"ama":"Jirovec D, Mutter PM, Hofmann AC, et al. Dynamics of hole singlet-triplet qubits with large g-factor differences. Physical Review Letters. 2022;128(12). doi:10.1103/PhysRevLett.128.126803","ieee":"D. Jirovec et al., “Dynamics of hole singlet-triplet qubits with large g-factor differences,” Physical Review Letters, vol. 128, no. 12. American Physical Society, 2022.","apa":"Jirovec, D., Mutter, P. M., Hofmann, A. C., Crippa, A., Rychetsky, M., Craig, D. L., … Katsaros, G. (2022). Dynamics of hole singlet-triplet qubits with large g-factor differences. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.128.126803","ista":"Jirovec D, Mutter PM, Hofmann AC, Crippa A, Rychetsky M, Craig DL, Kukucka J, Martins F, Ballabio A, Ares N, Chrastina D, Isella G, Burkard G, Katsaros G. 2022. Dynamics of hole singlet-triplet qubits with large g-factor differences. Physical Review Letters. 128(12), 126803.","short":"D. Jirovec, P.M. Mutter, A.C. Hofmann, A. Crippa, M. Rychetsky, D.L. Craig, J. Kukucka, F. Martins, A. Ballabio, N. Ares, D. Chrastina, G. Isella, G. Burkard, G. Katsaros, Physical Review Letters 128 (2022).","mla":"Jirovec, Daniel, et al. “Dynamics of Hole Singlet-Triplet Qubits with Large g-Factor Differences.” Physical Review Letters, vol. 128, no. 12, 126803, American Physical Society, 2022, doi:10.1103/PhysRevLett.128.126803.","chicago":"Jirovec, Daniel, Philipp M. Mutter, Andrea C Hofmann, Alessandro Crippa, Marek Rychetsky, David L. Craig, Josip Kukucka, et al. “Dynamics of Hole Singlet-Triplet Qubits with Large g-Factor Differences.” Physical Review Letters. American Physical Society, 2022. https://doi.org/10.1103/PhysRevLett.128.126803."},"publication":"Physical Review Letters","article_type":"original","date_published":"2022-03-24T00:00:00Z","article_number":"126803","ec_funded":1,"file_date_updated":"2022-03-28T06:53:39Z","acknowledgement":"This research was supported by the Scientific Service Units of ISTA through resources provided by the MIBA Machine Shop and the nanofabrication facility. This project has received funding from the European Union’s Horizon 2020 research and innovation program under the Marie\r\nSkłodowska-Curie Grant Agreement No. 844511, No. 75441, and by the FWF-P 30207, I05060, and M3032-N projects. A. B. acknowledges support from the EU Horizon-2020 FET project microSPIRE, ID: 766955. P.M. M. and G. B. acknowledge funding by the Deutsche Forschungsgemeinschaft (DFG—German Research Foundation) under Project No. 450396347. This work was supported by the Royal Society (URF\\R1\\191150) and the European Research Council (Grant Agreement No. 948932), N. A. acknowledges the use of the University of Oxford Advanced Research Computing (ARC) facility.","year":"2022","department":[{"_id":"GradSch"},{"_id":"GeKa"}],"publisher":"American Physical Society","publication_status":"published","author":[{"full_name":"Jirovec, Daniel","orcid":"0000-0002-7197-4801","id":"4C473F58-F248-11E8-B48F-1D18A9856A87","last_name":"Jirovec","first_name":"Daniel"},{"full_name":"Mutter, Philipp M.","last_name":"Mutter","first_name":"Philipp M."},{"id":"340F461A-F248-11E8-B48F-1D18A9856A87","last_name":"Hofmann","first_name":"Andrea C","full_name":"Hofmann, Andrea C"},{"full_name":"Crippa, Alessandro","orcid":"0000-0002-2968-611X","id":"1F2B21A2-F6E7-11E9-9B82-F7DBE5697425","last_name":"Crippa","first_name":"Alessandro"},{"first_name":"Marek","last_name":"Rychetsky","full_name":"Rychetsky, Marek"},{"first_name":"David L.","last_name":"Craig","full_name":"Craig, David L."},{"full_name":"Kukucka, Josip","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","last_name":"Kukucka","first_name":"Josip"},{"full_name":"Martins, Frederico","first_name":"Frederico","last_name":"Martins","id":"38F80F9A-1CB8-11EA-BC76-B49B3DDC885E","orcid":"0000-0003-2668-2401"},{"full_name":"Ballabio, Andrea","last_name":"Ballabio","first_name":"Andrea"},{"full_name":"Ares, Natalia","last_name":"Ares","first_name":"Natalia"},{"last_name":"Chrastina","first_name":"Daniel","full_name":"Chrastina, Daniel"},{"first_name":"Giovanni","last_name":"Isella","full_name":"Isella, Giovanni"},{"full_name":"Burkard, Guido ","first_name":"Guido ","last_name":"Burkard"},{"full_name":"Katsaros, Georgios","last_name":"Katsaros","first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"}],"volume":128,"date_updated":"2023-08-03T06:14:58Z","date_created":"2022-03-24T15:51:11Z","publication_identifier":{"eissn":["1079-7114"]},"month":"03","oa":1,"tmp":{"name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png"},"external_id":{"isi":["000786542500004"],"arxiv":["2111.05130"]},"project":[{"call_identifier":"H2020","name":"Majorana bound states in Ge/SiGe heterostructures","grant_number":"844511","_id":"26A151DA-B435-11E9-9278-68D0E5697425"},{"call_identifier":"H2020","name":"ISTplus - Postdoctoral Fellowships","grant_number":"754411","_id":"260C2330-B435-11E9-9278-68D0E5697425"},{"name":"Hole spin orbit qubits in Ge quantum wells","call_identifier":"FWF","grant_number":"P30207","_id":"2641CE5E-B435-11E9-9278-68D0E5697425"},{"name":"High impedance circuit quantum electrodynamics with hole spins","_id":"c0977eea-5a5b-11eb-8a69-a862db0cf4d1","grant_number":"I05060"},{"name":"Long-range spin exchange for 2D qubits architectures","grant_number":"M03032","_id":"c08c05c4-5a5b-11eb-8a69-dc6ce49d7973"}],"isi":1,"quality_controlled":"1","doi":"10.1103/PhysRevLett.128.126803","language":[{"iso":"eng"}],"acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}]},{"keyword":["Multidisciplinary"],"scopus_import":"1","article_processing_charge":"No","day":"15","page":"442-447","article_type":"original","citation":{"apa":"Valentini, M., Borovkov, M., Prada, E., Martí-Sánchez, S., Botifoll, M., Hofmann, A. C., … Katsaros, G. (2022). Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks. Nature. Springer Nature. https://doi.org/10.1038/s41586-022-05382-w","ieee":"M. Valentini et al., “Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks,” Nature, vol. 612, no. 7940. Springer Nature, pp. 442–447, 2022.","ista":"Valentini M, Borovkov M, Prada E, Martí-Sánchez S, Botifoll M, Hofmann AC, Arbiol J, Aguado R, San-Jose P, Katsaros G. 2022. Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks. Nature. 612(7940), 442–447.","ama":"Valentini M, Borovkov M, Prada E, et al. Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks. Nature. 2022;612(7940):442-447. doi:10.1038/s41586-022-05382-w","chicago":"Valentini, Marco, Maksim Borovkov, Elsa Prada, Sara Martí-Sánchez, Marc Botifoll, Andrea C Hofmann, Jordi Arbiol, Ramón Aguado, Pablo San-Jose, and Georgios Katsaros. “Majorana-like Coulomb Spectroscopy in the Absence of Zero-Bias Peaks.” Nature. Springer Nature, 2022. https://doi.org/10.1038/s41586-022-05382-w.","short":"M. Valentini, M. Borovkov, E. Prada, S. Martí-Sánchez, M. Botifoll, A.C. Hofmann, J. Arbiol, R. Aguado, P. San-Jose, G. Katsaros, Nature 612 (2022) 442–447.","mla":"Valentini, Marco, et al. “Majorana-like Coulomb Spectroscopy in the Absence of Zero-Bias Peaks.” Nature, vol. 612, no. 7940, Springer Nature, 2022, pp. 442–47, doi:10.1038/s41586-022-05382-w."},"publication":"Nature","date_published":"2022-12-15T00:00:00Z","type":"journal_article","issue":"7940","abstract":[{"text":"Hybrid semiconductor–superconductor devices hold great promise for realizing topological quantum computing with Majorana zero modes1,2,3,4,5. However, multiple claims of Majorana detection, based on either tunnelling6,7,8,9,10 or Coulomb blockade (CB) spectroscopy11,12, remain disputed. Here we devise an experimental protocol that allows us to perform both types of measurement on the same hybrid island by adjusting its charging energy via tunable junctions to the normal leads. This method reduces ambiguities of Majorana detections by checking the consistency between CB spectroscopy and zero-bias peaks in non-blockaded transport. Specifically, we observe junction-dependent, even–odd modulated, single-electron CB peaks in InAs/Al hybrid nanowires without concomitant low-bias peaks in tunnelling spectroscopy. We provide a theoretical interpretation of the experimental observations in terms of low-energy, longitudinally confined island states rather than overlapping Majorana modes. Our results highlight the importance of combined measurements on the same device for the identification of topological Majorana zero modes.","lang":"eng"}],"intvolume":" 612","title":"Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks","status":"public","_id":"12118","user_id":"4359f0d1-fa6c-11eb-b949-802e58b17ae8","oa_version":"Preprint","publication_identifier":{"issn":["0028-0836"],"eissn":["1476-4687"]},"month":"12","project":[{"call_identifier":"H2020","name":"Majorana bound states in Ge/SiGe heterostructures","_id":"26A151DA-B435-11E9-9278-68D0E5697425","grant_number":"844511"}],"isi":1,"quality_controlled":"1","oa":1,"main_file_link":[{"open_access":"1","url":" https://doi.org/10.48550/arXiv.2203.07829"}],"external_id":{"isi":["000899725400001"],"arxiv":["2203.07829"]},"language":[{"iso":"eng"}],"acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"doi":"10.1038/s41586-022-05382-w","ec_funded":1,"department":[{"_id":"GeKa"}],"publisher":"Springer Nature","publication_status":"published","acknowledgement":"We thank P. Krogstrup for providing us with the NW materials. We thank A. Higginbotham, E. J. H. Lee, C. Marcus and S. Vaitiekėnas for helpful discussions and G. Steffensen for his input on the diffusive Little-Parks theory. This research was supported by the Scientific Service Units of ISTA through resources provided by the MIBA Machine Shop and the nanofabrication facility; the NOMIS Foundation; the CSIC Interdisciplinary Thematic Platform (PTI+) on Quantum Technologies (PTI-QTEP+). A.H. acknowledges support from H2020-MSCA-IF-2018/844511. ICN2 also acknowledges funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported by the Severo Ochoa Program from Spanish MINECO (Grant no. SEV-2017-0706) and is funded by the CERCA Programme/Generalitat de Catalunya. Part of the present work has been performed in the framework of Universitat Autònoma de Barcelona Materials Science PhD programme. Authors acknowledge the use of instrumentation as well as the technical advice provided by the National Facility ELECMI ICTS, node ‘Laboratorio de Microscopías Avanzadas’ at University of Zaragoza. This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement no. 823717-ESTEEM3. This study was supported by MCIN with funding from European Union NextGenerationEU (PRTR-C17.I1) and Generalitat de Catalunya. This research is part of the CSIC programme for the Spanish Recovery, Transformation and Resilience Plan funded by the Recovery and Resilience Facility of the European Union, established by the Regulation (EU) 2020/2094. We thank support from Grant PGC2018-097018-BI00, project FlagERA TOPOGRAPH (PCI2018-093026) and project NANOGEN (PID2020-116093RB-C43), funded by MCIN/AEI/10.13039/501100011033/ and by ‘ERDF A way of making Europe’, by the European Union. M. Botifoll acknowledges support from SUR Generalitat de Catalunya and the EU Social Fund (project ref. 2020 FI 00103).","year":"2022","volume":612,"date_updated":"2024-02-21T12:35:33Z","date_created":"2023-01-12T11:56:45Z","related_material":{"record":[{"id":"13286","relation":"dissertation_contains","status":"public"},{"id":"12522","status":"public","relation":"research_data"}],"link":[{"url":"https://ista.ac.at/en/news/imposter-particles-revealed-and-explained/","relation":"press_release","description":"News on ISTA Website"}]},"author":[{"full_name":"Valentini, Marco","first_name":"Marco","last_name":"Valentini","id":"C0BB2FAC-D767-11E9-B658-BC13E6697425"},{"full_name":"Borovkov, Maksim","first_name":"Maksim","last_name":"Borovkov","id":"2ac7a0a2-3562-11eb-9256-fbd18ea55087"},{"first_name":"Elsa","last_name":"Prada","full_name":"Prada, Elsa"},{"last_name":"Martí-Sánchez","first_name":"Sara","full_name":"Martí-Sánchez, Sara"},{"last_name":"Botifoll","first_name":"Marc","full_name":"Botifoll, Marc"},{"full_name":"Hofmann, Andrea C","last_name":"Hofmann","first_name":"Andrea C","id":"340F461A-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Arbiol, Jordi","first_name":"Jordi","last_name":"Arbiol"},{"last_name":"Aguado","first_name":"Ramón","full_name":"Aguado, Ramón"},{"last_name":"San-Jose","first_name":"Pablo","full_name":"San-Jose, Pablo"},{"last_name":"Katsaros","first_name":"Georgios","orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Katsaros, Georgios"}]},{"year":"2021","acknowledgement":"This work was supported by the National Key R&D Program of China (Grant No. 2016YFA0301700) and the ERC Starting Grant no. 335497.","department":[{"_id":"GeKa"}],"publisher":"IEEE","publication_status":"published","author":[{"full_name":"Gao, Fei","first_name":"Fei","last_name":"Gao"},{"first_name":"Jie Yin","last_name":"Zhang","full_name":"Zhang, Jie Yin"},{"full_name":"Wang, Jian Huan","last_name":"Wang","first_name":"Jian Huan"},{"full_name":"Ming, Ming","last_name":"Ming","first_name":"Ming"},{"full_name":"Wang, Tina","first_name":"Tina","last_name":"Wang"},{"full_name":"Zhang, Jian Jun","first_name":"Jian Jun","last_name":"Zhang"},{"last_name":"Watzinger","first_name":"Hannes","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","full_name":"Watzinger, Hannes"},{"full_name":"Kukucka, Josip","first_name":"Josip","last_name":"Kukucka","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Vukušić, Lada","first_name":"Lada","last_name":"Vukušić","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0003-2424-8636"},{"full_name":"Katsaros, Georgios","first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X"},{"first_name":"Ke","last_name":"Wang","full_name":"Wang, Ke"},{"first_name":"Gang","last_name":"Xu","full_name":"Xu, Gang"},{"full_name":"Li, Hai Ou","last_name":"Li","first_name":"Hai Ou"},{"first_name":"Guo Ping","last_name":"Guo","full_name":"Guo, Guo Ping"}],"date_created":"2021-06-06T22:01:29Z","date_updated":"2023-10-03T12:51:59Z","article_number":"9420817","ec_funded":1,"external_id":{"isi":["000675595800006"]},"project":[{"grant_number":"335497","_id":"25517E86-B435-11E9-9278-68D0E5697425","name":"Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires","call_identifier":"FP7"}],"quality_controlled":"1","isi":1,"doi":"10.1109/EDTM50988.2021.9420817","conference":{"name":"EDTM: IEEE Electron Devices Technology and Manufacturing Conference","location":"Virtual, Online","start_date":"2021-04-08","end_date":"2021-04-11"},"language":[{"iso":"eng"}],"publication_identifier":{"isbn":["9781728181769"]},"month":"04","_id":"9464","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","status":"public","title":"Ge/Si quantum wires for quantum computing","oa_version":"None","type":"conference","abstract":[{"lang":"eng","text":"We firstly introduce the self-assembled growth of highly uniform Ge quantum wires with controllable position, distance and length on patterned Si (001) substrates. We then present the electrically tunable strong spin-orbit coupling, the first Ge hole spin qubit and ultrafast operation of hole spin qubit in the Ge/Si quantum wires."}],"citation":{"ama":"Gao F, Zhang JY, Wang JH, et al. Ge/Si quantum wires for quantum computing. In: 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. IEEE; 2021. doi:10.1109/EDTM50988.2021.9420817","ieee":"F. Gao et al., “Ge/Si quantum wires for quantum computing,” in 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, Virtual, Online, 2021.","apa":"Gao, F., Zhang, J. Y., Wang, J. H., Ming, M., Wang, T., Zhang, J. J., … Guo, G. P. (2021). Ge/Si quantum wires for quantum computing. In 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Virtual, Online: IEEE. https://doi.org/10.1109/EDTM50988.2021.9420817","ista":"Gao F, Zhang JY, Wang JH, Ming M, Wang T, Zhang JJ, Watzinger H, Kukucka J, Vukušić L, Katsaros G, Wang K, Xu G, Li HO, Guo GP. 2021. Ge/Si quantum wires for quantum computing. 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. EDTM: IEEE Electron Devices Technology and Manufacturing Conference, 9420817.","short":"F. Gao, J.Y. Zhang, J.H. Wang, M. Ming, T. Wang, J.J. Zhang, H. Watzinger, J. Kukucka, L. Vukušić, G. Katsaros, K. Wang, G. Xu, H.O. Li, G.P. Guo, in:, 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, IEEE, 2021.","mla":"Gao, Fei, et al. “Ge/Si Quantum Wires for Quantum Computing.” 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, 9420817, IEEE, 2021, doi:10.1109/EDTM50988.2021.9420817.","chicago":"Gao, Fei, Jie Yin Zhang, Jian Huan Wang, Ming Ming, Tina Wang, Jian Jun Zhang, Hannes Watzinger, et al. “Ge/Si Quantum Wires for Quantum Computing.” In 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. IEEE, 2021. https://doi.org/10.1109/EDTM50988.2021.9420817."},"publication":"2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021","date_published":"2021-04-08T00:00:00Z","scopus_import":"1","article_processing_charge":"No","day":"08"},{"publisher":"Institute of Science and Technology Austria","department":[{"_id":"GeKa"}],"status":"public","ddc":["530"],"title":"Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium","_id":"9291","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","year":"2021","oa_version":"Published Version","file":[{"date_updated":"2021-03-27T13:46:17Z","date_created":"2021-03-27T13:46:17Z","checksum":"635df3c08fc13c3dac008cd421aefbe4","success":1,"relation":"main_file","file_id":"9292","file_size":10616071,"content_type":"application/x-zip-compressed","creator":"gkatsaro","file_name":"Raw Data- Enhancement of Superconductivity in a Planar Ge hole gas.zip","access_level":"open_access"},{"file_size":470,"content_type":"text/plain","creator":"dernst","access_level":"open_access","file_name":"README.txt","checksum":"12b3ca69ae7509a346711baae0b02a75","success":1,"date_updated":"2021-04-01T07:52:56Z","date_created":"2021-04-01T07:52:56Z","relation":"main_file","file_id":"9302"}],"date_updated":"2024-02-21T12:37:14Z","date_created":"2021-03-27T13:47:49Z","author":[{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","first_name":"Georgios","last_name":"Katsaros","full_name":"Katsaros, Georgios"}],"type":"research_data","license":"https://creativecommons.org/publicdomain/zero/1.0/","file_date_updated":"2021-04-01T07:52:56Z","abstract":[{"text":"This .zip File contains the transport data for figures presented in the main text and supplementary material of \"Enhancement of Proximity Induced Superconductivity in Planar Germanium\" by K. Aggarwal, et. al. \r\nThe measurements were done using Labber Software and the data is stored in the hdf5 file format. The files can be opened using either the Labber Log Browser (https://labber.org/overview/) or Labber Python API (http://labber.org/online-doc/api/LogFile.html).","lang":"eng"}],"citation":{"chicago":"Katsaros, Georgios. “Raw Transport Data for: Enhancement of Proximity Induced Superconductivity in Planar Germanium.” Institute of Science and Technology Austria, 2021. https://doi.org/10.15479/AT:ISTA:9291.","short":"G. Katsaros, (2021).","mla":"Katsaros, Georgios. Raw Transport Data for: Enhancement of Proximity Induced Superconductivity in Planar Germanium. Institute of Science and Technology Austria, 2021, doi:10.15479/AT:ISTA:9291.","ieee":"G. Katsaros, “Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium.” Institute of Science and Technology Austria, 2021.","apa":"Katsaros, G. (2021). Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium. Institute of Science and Technology Austria. https://doi.org/10.15479/AT:ISTA:9291","ista":"Katsaros G. 2021. Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium, Institute of Science and Technology Austria, 10.15479/AT:ISTA:9291.","ama":"Katsaros G. Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium. 2021. doi:10.15479/AT:ISTA:9291"},"tmp":{"short":"CC0 (1.0)","image":"/images/cc_0.png","legal_code_url":"https://creativecommons.org/publicdomain/zero/1.0/legalcode","name":"Creative Commons Public Domain Dedication (CC0 1.0)"},"oa":1,"doi":"10.15479/AT:ISTA:9291","date_published":"2021-03-29T00:00:00Z","article_processing_charge":"No","has_accepted_license":"1","day":"29","month":"03"},{"article_type":"original","citation":{"ista":"Valentini M, Peñaranda F, Hofmann AC, Brauns M, Hauschild R, Krogstrup P, San-Jose P, Prada E, Aguado R, Katsaros G. 2021. Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states. Science. 373(6550), 82–88.","ieee":"M. Valentini et al., “Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states,” Science, vol. 373, no. 6550. American Association for the Advancement of Science, 2021.","apa":"Valentini, M., Peñaranda, F., Hofmann, A. C., Brauns, M., Hauschild, R., Krogstrup, P., … Katsaros, G. (2021). Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states. Science. American Association for the Advancement of Science. https://doi.org/10.1126/science.abf1513","ama":"Valentini M, Peñaranda F, Hofmann AC, et al. Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states. Science. 2021;373(6550). doi:10.1126/science.abf1513","chicago":"Valentini, Marco, Fernando Peñaranda, Andrea C Hofmann, Matthias Brauns, Robert Hauschild, Peter Krogstrup, Pablo San-Jose, Elsa Prada, Ramón Aguado, and Georgios Katsaros. “Nontopological Zero-Bias Peaks in Full-Shell Nanowires Induced by Flux-Tunable Andreev States.” Science. American Association for the Advancement of Science, 2021. https://doi.org/10.1126/science.abf1513.","mla":"Valentini, Marco, et al. “Nontopological Zero-Bias Peaks in Full-Shell Nanowires Induced by Flux-Tunable Andreev States.” Science, vol. 373, no. 6550, 82–88, American Association for the Advancement of Science, 2021, doi:10.1126/science.abf1513.","short":"M. Valentini, F. Peñaranda, A.C. Hofmann, M. Brauns, R. Hauschild, P. Krogstrup, P. San-Jose, E. Prada, R. Aguado, G. Katsaros, Science 373 (2021)."},"publication":"Science","date_published":"2021-07-02T00:00:00Z","scopus_import":"1","article_processing_charge":"No","day":"02","intvolume":" 373","title":"Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states","status":"public","_id":"8910","user_id":"4359f0d1-fa6c-11eb-b949-802e58b17ae8","oa_version":"Submitted Version","type":"journal_article","issue":"6550","abstract":[{"text":"A semiconducting nanowire fully wrapped by a superconducting shell has been proposed as a platform for obtaining Majorana modes at small magnetic fields. In this study, we demonstrate that the appearance of subgap states in such structures is actually governed by the junction region in tunneling spectroscopy measurements and not the full-shell nanowire itself. Short tunneling regions never show subgap states, whereas longer junctions always do. This can be understood in terms of quantum dots forming in the junction and hosting Andreev levels in the Yu-Shiba-Rusinov regime. The intricate magnetic field dependence of the Andreev levels, through both the Zeeman and Little-Parks effects, may result in robust zero-bias peaks—features that could be easily misinterpreted as originating from Majorana zero modes but are unrelated to topological superconductivity.","lang":"eng"}],"project":[{"_id":"262116AA-B435-11E9-9278-68D0E5697425","name":"Hybrid Semiconductor - Superconductor Quantum Devices"},{"call_identifier":"H2020","name":"Majorana bound states in Ge/SiGe heterostructures","_id":"26A151DA-B435-11E9-9278-68D0E5697425","grant_number":"844511"}],"isi":1,"quality_controlled":"1","external_id":{"isi":["000677843100034"],"arxiv":["2008.02348"]},"main_file_link":[{"open_access":"1","url":"https://arxiv.org/abs/2008.02348"}],"oa":1,"language":[{"iso":"eng"}],"acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"doi":"10.1126/science.abf1513","publication_identifier":{"issn":["00368075"],"eissn":["10959203"]},"month":"07","publisher":"American Association for the Advancement of Science","department":[{"_id":"GeKa"},{"_id":"Bio"}],"publication_status":"published","year":"2021","acknowledgement":"The authors thank A. Higginbotham, E. J. H. Lee and F. R. Martins for helpful discussions. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility; the NOMIS Foundation and Microsoft; the European Union’s Horizon 2020 research and innovation program under the Marie SklodowskaCurie grant agreement No 844511; the FETOPEN Grant Agreement No. 828948; the European Research Commission through the grant agreement HEMs-DAM No 716655; the Spanish Ministry of Science and Innovation through Grants PGC2018-097018-B-I00, PCI2018-093026, FIS2016-80434-P (AEI/FEDER, EU), RYC2011-09345 (Ram´on y Cajal Programme), and the Mar´ıa de Maeztu Programme for Units of Excellence in R&D (CEX2018-000805-M); the CSIC Research Platform on Quantum Technologies PTI-001.","volume":373,"date_updated":"2024-02-21T12:40:09Z","date_created":"2020-12-02T10:51:52Z","related_material":{"record":[{"id":"13286","status":"public","relation":"dissertation_contains"},{"id":"9389","relation":"research_data","status":"public"}],"link":[{"relation":"press_release","description":"News on IST Homepage","url":"https://ist.ac.at/en/news/unfinding-a-split-electron/"}]},"author":[{"full_name":"Valentini, Marco","id":"C0BB2FAC-D767-11E9-B658-BC13E6697425","first_name":"Marco","last_name":"Valentini"},{"full_name":"Peñaranda, Fernando","last_name":"Peñaranda","first_name":"Fernando"},{"id":"340F461A-F248-11E8-B48F-1D18A9856A87","first_name":"Andrea C","last_name":"Hofmann","full_name":"Hofmann, Andrea C"},{"id":"33F94E3C-F248-11E8-B48F-1D18A9856A87","last_name":"Brauns","first_name":"Matthias","full_name":"Brauns, Matthias"},{"full_name":"Hauschild, Robert","orcid":"0000-0001-9843-3522","id":"4E01D6B4-F248-11E8-B48F-1D18A9856A87","last_name":"Hauschild","first_name":"Robert"},{"first_name":"Peter","last_name":"Krogstrup","full_name":"Krogstrup, Peter"},{"full_name":"San-Jose, Pablo","first_name":"Pablo","last_name":"San-Jose"},{"last_name":"Prada","first_name":"Elsa","full_name":"Prada, Elsa"},{"last_name":"Aguado","first_name":"Ramón","full_name":"Aguado, Ramón"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","first_name":"Georgios","last_name":"Katsaros","full_name":"Katsaros, Georgios"}],"article_number":"82-88","ec_funded":1},{"title":"Enhancement of proximity-induced superconductivity in a planar Ge hole gas","status":"public","ddc":["620"],"intvolume":" 3","_id":"10559","user_id":"8b945eb4-e2f2-11eb-945a-df72226e66a9","file":[{"file_name":"2021_PhysRevResearch_Aggarwal.pdf","access_level":"open_access","content_type":"application/pdf","file_size":1917512,"creator":"cchlebak","relation":"main_file","file_id":"10561","date_updated":"2021-12-17T08:12:37Z","date_created":"2021-12-17T08:12:37Z","checksum":"60a1bc9c9b616b1b155044bb8cfc6484","success":1}],"oa_version":"Published Version","type":"journal_article","abstract":[{"lang":"eng","text":"Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip."}],"issue":"2","article_type":"original","publication":"Physical Review Research","citation":{"mla":"Aggarwal, Kushagra, et al. “Enhancement of Proximity-Induced Superconductivity in a Planar Ge Hole Gas.” Physical Review Research, vol. 3, no. 2, L022005, American Physical Society, 2021, doi:10.1103/physrevresearch.3.l022005.","short":"K. Aggarwal, A.C. Hofmann, D. Jirovec, I. Prieto Gonzalez, A. Sammak, M. Botifoll, S. Martí-Sánchez, M. Veldhorst, J. Arbiol, G. Scappucci, J. Danon, G. Katsaros, Physical Review Research 3 (2021).","chicago":"Aggarwal, Kushagra, Andrea C Hofmann, Daniel Jirovec, Ivan Prieto Gonzalez, Amir Sammak, Marc Botifoll, Sara Martí-Sánchez, et al. “Enhancement of Proximity-Induced Superconductivity in a Planar Ge Hole Gas.” Physical Review Research. American Physical Society, 2021. https://doi.org/10.1103/physrevresearch.3.l022005.","ama":"Aggarwal K, Hofmann AC, Jirovec D, et al. Enhancement of proximity-induced superconductivity in a planar Ge hole gas. Physical Review Research. 2021;3(2). doi:10.1103/physrevresearch.3.l022005","ista":"Aggarwal K, Hofmann AC, Jirovec D, Prieto Gonzalez I, Sammak A, Botifoll M, Martí-Sánchez S, Veldhorst M, Arbiol J, Scappucci G, Danon J, Katsaros G. 2021. Enhancement of proximity-induced superconductivity in a planar Ge hole gas. Physical Review Research. 3(2), L022005.","ieee":"K. Aggarwal et al., “Enhancement of proximity-induced superconductivity in a planar Ge hole gas,” Physical Review Research, vol. 3, no. 2. American Physical Society, 2021.","apa":"Aggarwal, K., Hofmann, A. C., Jirovec, D., Prieto Gonzalez, I., Sammak, A., Botifoll, M., … Katsaros, G. (2021). Enhancement of proximity-induced superconductivity in a planar Ge hole gas. Physical Review Research. American Physical Society. https://doi.org/10.1103/physrevresearch.3.l022005"},"date_published":"2021-04-15T00:00:00Z","keyword":["general engineering"],"scopus_import":"1","day":"15","article_processing_charge":"No","has_accepted_license":"1","publication_status":"published","department":[{"_id":"GeKa"}],"publisher":"American Physical Society","acknowledgement":"This research and related results were made possible with the support of the NOMIS Foundation. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility, the European Union's Horizon 2020 research and innovation program under the Marie Sklodowska-Curie Grant agreement No. 844511 Grant Agreement No. 862046. ICN2 acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported by the Severo Ochoa program from Spanish MINECO (Grant No. SEV-2017-0706) and is funded by the CERCA Programme/Generalitat de Catalunya. Part of the present work has been performed in the framework of Universitat Autnoma de Barcelona Materials Science PhD program. The HAADF-STEM microscopy was conducted in the Laboratorio de Microscopias Avanzadas at Instituto de Nanociencia de Aragon-Universidad de Zaragoza. Authors acknowledge the LMA-INA for offering access to their instruments and expertise. We acknowledge support from CSIC Research Platform on Quantum Technologies PTI-001. This project has received funding from the European Union's Horizon 2020 research and innovation programme under Grant Agreement No. 823717 ESTEEM3. M.B. acknowledges support from SUR Generalitat de Catalunya and the EU Social Fund; project ref. 2020 FI 00103. G.S. and M.V. acknowledge support through a projectruimte grant associated with the Netherlands Organization of Scientific Research (NWO). J.D. acknowledges support through FRIPRO-project 274853, which is funded by the Research Council of Norway.","year":"2021","date_updated":"2024-02-21T12:41:26Z","date_created":"2021-12-16T18:50:57Z","volume":3,"author":[{"full_name":"Aggarwal, Kushagra","orcid":"0000-0001-9985-9293","id":"b22ab905-3539-11eb-84c3-fc159dcd79cb","last_name":"Aggarwal","first_name":"Kushagra"},{"full_name":"Hofmann, Andrea C","first_name":"Andrea C","last_name":"Hofmann","id":"340F461A-F248-11E8-B48F-1D18A9856A87"},{"id":"4C473F58-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-7197-4801","first_name":"Daniel","last_name":"Jirovec","full_name":"Jirovec, Daniel"},{"id":"2A307FE2-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-7370-5357","first_name":"Ivan","last_name":"Prieto Gonzalez","full_name":"Prieto Gonzalez, Ivan"},{"full_name":"Sammak, Amir","last_name":"Sammak","first_name":"Amir"},{"first_name":"Marc","last_name":"Botifoll","full_name":"Botifoll, Marc"},{"last_name":"Martí-Sánchez","first_name":"Sara","full_name":"Martí-Sánchez, Sara"},{"full_name":"Veldhorst, Menno","last_name":"Veldhorst","first_name":"Menno"},{"first_name":"Jordi","last_name":"Arbiol","full_name":"Arbiol, Jordi"},{"full_name":"Scappucci, Giordano","last_name":"Scappucci","first_name":"Giordano"},{"full_name":"Danon, Jeroen","last_name":"Danon","first_name":"Jeroen"},{"full_name":"Katsaros, Georgios","first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X"}],"related_material":{"record":[{"id":"8831","status":"public","relation":"earlier_version"},{"id":"8834","status":"public","relation":"research_data"}]},"article_number":"L022005","file_date_updated":"2021-12-17T08:12:37Z","ec_funded":1,"quality_controlled":"1","project":[{"_id":"26A151DA-B435-11E9-9278-68D0E5697425","grant_number":"844511","call_identifier":"H2020","name":"Majorana bound states in Ge/SiGe heterostructures"},{"grant_number":"862046","_id":"237E5020-32DE-11EA-91FC-C7463DDC885E","call_identifier":"H2020","name":"TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS"}],"tmp":{"name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png"},"external_id":{"arxiv":["2012.00322"]},"oa":1,"acknowledged_ssus":[{"_id":"NanoFab"},{"_id":"M-Shop"}],"language":[{"iso":"eng"}],"doi":"10.1103/physrevresearch.3.l022005","month":"04","publication_identifier":{"issn":["2643-1564"]}},{"ec_funded":1,"publisher":"Springer Nature","department":[{"_id":"GeKa"}],"publication_status":"published","acknowledgement":"G.S., M.W.,F.A.Z acknowledge financial support from The Netherlands Organization for Scientific Research (NWO). F.Z., D.L., G.K. acknowledge funding from the European Union’s Horizon 2020 research and innovation programme under Grand Agreement Nr. 862046. G.K. acknowledges funding from FP7 ERC Starting Grant 335497, FWF Y 715-N30, FWF P-30207. S.D. acknowledges support from the European Union’s Horizon 2020 program under Grant\r\nAgreement No. 81050 and from the Agence Nationale de la Recherche through the TOPONANO and CMOSQSPIN projects. J.Z. acknowledges support from the National Key R&D Program of China (Grant No. 2016YFA0301701) and Strategic Priority Research Program of CAS (Grant No. XDB30000000). D.L. and C.K. acknowledge the Swiss National Science Foundation and NCCR QSIT.","year":"2021","volume":6,"date_created":"2020-12-02T10:52:51Z","date_updated":"2024-03-07T14:48:57Z","author":[{"full_name":"Scappucci, Giordano","first_name":"Giordano","last_name":"Scappucci"},{"first_name":"Christoph","last_name":"Kloeffel","full_name":"Kloeffel, Christoph"},{"full_name":"Zwanenburg, Floris A.","first_name":"Floris A.","last_name":"Zwanenburg"},{"first_name":"Daniel","last_name":"Loss","full_name":"Loss, Daniel"},{"full_name":"Myronov, Maksym","first_name":"Maksym","last_name":"Myronov"},{"last_name":"Zhang","first_name":"Jian-Jun","full_name":"Zhang, Jian-Jun"},{"last_name":"Franceschi","first_name":"Silvano De","full_name":"Franceschi, Silvano De"},{"full_name":"Katsaros, Georgios","last_name":"Katsaros","first_name":"Georgios","orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"},{"first_name":"Menno","last_name":"Veldhorst","full_name":"Veldhorst, Menno"}],"publication_identifier":{"eissn":["2058-8437"]},"month":"10","project":[{"call_identifier":"FP7","name":"Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires","grant_number":"335497","_id":"25517E86-B435-11E9-9278-68D0E5697425"},{"grant_number":"Y00715","_id":"2552F888-B435-11E9-9278-68D0E5697425","call_identifier":"FWF","name":"Loch Spin-Qubits und Majorana-Fermionen in Germanium"},{"grant_number":"P30207","_id":"2641CE5E-B435-11E9-9278-68D0E5697425","name":"Hole spin orbit qubits in Ge quantum wells","call_identifier":"FWF"}],"quality_controlled":"1","isi":1,"main_file_link":[{"open_access":"1","url":"https://arxiv.org/abs/2004.08133"}],"external_id":{"isi":["000600826100003"],"arxiv":["2004.08133"]},"oa":1,"language":[{"iso":"eng"}],"doi":"10.1038/s41578-020-00262-z","type":"journal_article","abstract":[{"lang":"eng","text":"In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties of the germanium valence-band states, commonly known as holes, such as their inherently strong spin-orbit coupling and the ability to host superconducting pairing correlations. In this Review, we initially introduce the physics of holes in low-dimensional germanium structures with key insights from a theoretical perspective. We then examine the material science progress underpinning germanium-based planar heterostructures and nanowires. We review the most significant experimental results demonstrating key building blocks for quantum technology, such as an electrically driven universal quantum gate set with spin qubits in quantum dots and superconductor-semiconductor devices for hybrid quantum systems. We conclude by identifying the most promising prospects\r\ntoward scalable quantum information processing. "}],"intvolume":" 6","title":"The germanium quantum information route","status":"public","user_id":"3E5EF7F0-F248-11E8-B48F-1D18A9856A87","_id":"8911","oa_version":"Preprint","scopus_import":"1","article_processing_charge":"No","day":"01","page":"926–943 ","article_type":"original","citation":{"ama":"Scappucci G, Kloeffel C, Zwanenburg FA, et al. The germanium quantum information route. Nature Reviews Materials. 2021;6:926–943. doi:10.1038/s41578-020-00262-z","ista":"Scappucci G, Kloeffel C, Zwanenburg FA, Loss D, Myronov M, Zhang J-J, Franceschi SD, Katsaros G, Veldhorst M. 2021. The germanium quantum information route. Nature Reviews Materials. 6, 926–943.","ieee":"G. Scappucci et al., “The germanium quantum information route,” Nature Reviews Materials, vol. 6. Springer Nature, pp. 926–943, 2021.","apa":"Scappucci, G., Kloeffel, C., Zwanenburg, F. A., Loss, D., Myronov, M., Zhang, J.-J., … Veldhorst, M. (2021). The germanium quantum information route. Nature Reviews Materials. Springer Nature. https://doi.org/10.1038/s41578-020-00262-z","mla":"Scappucci, Giordano, et al. “The Germanium Quantum Information Route.” Nature Reviews Materials, vol. 6, Springer Nature, 2021, pp. 926–943, doi:10.1038/s41578-020-00262-z.","short":"G. Scappucci, C. Kloeffel, F.A. Zwanenburg, D. Loss, M. Myronov, J.-J. Zhang, S.D. Franceschi, G. Katsaros, M. Veldhorst, Nature Reviews Materials 6 (2021) 926–943.","chicago":"Scappucci, Giordano, Christoph Kloeffel, Floris A. Zwanenburg, Daniel Loss, Maksym Myronov, Jian-Jun Zhang, Silvano De Franceschi, Georgios Katsaros, and Menno Veldhorst. “The Germanium Quantum Information Route.” Nature Reviews Materials. Springer Nature, 2021. https://doi.org/10.1038/s41578-020-00262-z."},"publication":"Nature Reviews Materials","date_published":"2021-10-01T00:00:00Z"},{"user_id":"4359f0d1-fa6c-11eb-b949-802e58b17ae8","_id":"8909","title":"A singlet triplet hole spin qubit in planar Ge","status":"public","intvolume":" 20","oa_version":"Preprint","type":"journal_article","abstract":[{"lang":"eng","text":"Spin qubits are considered to be among the most promising candidates for building a quantum processor. Group IV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled X and Z-rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1μs which we extend beyond 15μs with echo techniques. These results show that Ge hole singlet triplet qubits outperform their electronic Si and GaAs based counterparts in speed and coherence, respectively. In addition, they are on par with Ge single spin qubits, but can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies."}],"issue":"8","publication":"Nature Materials","citation":{"mla":"Jirovec, Daniel, et al. “A Singlet Triplet Hole Spin Qubit in Planar Ge.” Nature Materials, vol. 20, no. 8, Springer Nature, 2021, pp. 1106–1112, doi:10.1038/s41563-021-01022-2.","short":"D. Jirovec, A.C. Hofmann, A. Ballabio, P.M. Mutter, G. Tavani, M. Botifoll, A. Crippa, J. Kukucka, O. Sagi, F. Martins, J. Saez Mollejo, I. Prieto Gonzalez, M. Borovkov, J. Arbiol, D. Chrastina, G. Isella, G. Katsaros, Nature Materials 20 (2021) 1106–1112.","chicago":"Jirovec, Daniel, Andrea C Hofmann, Andrea Ballabio, Philipp M. Mutter, Giulio Tavani, Marc Botifoll, Alessandro Crippa, et al. “A Singlet Triplet Hole Spin Qubit in Planar Ge.” Nature Materials. Springer Nature, 2021. https://doi.org/10.1038/s41563-021-01022-2.","ama":"Jirovec D, Hofmann AC, Ballabio A, et al. A singlet triplet hole spin qubit in planar Ge. Nature Materials. 2021;20(8):1106–1112. doi:10.1038/s41563-021-01022-2","ista":"Jirovec D, Hofmann AC, Ballabio A, Mutter PM, Tavani G, Botifoll M, Crippa A, Kukucka J, Sagi O, Martins F, Saez Mollejo J, Prieto Gonzalez I, Borovkov M, Arbiol J, Chrastina D, Isella G, Katsaros G. 2021. A singlet triplet hole spin qubit in planar Ge. Nature Materials. 20(8), 1106–1112.","ieee":"D. Jirovec et al., “A singlet triplet hole spin qubit in planar Ge,” Nature Materials, vol. 20, no. 8. Springer Nature, pp. 1106–1112, 2021.","apa":"Jirovec, D., Hofmann, A. C., Ballabio, A., Mutter, P. M., Tavani, G., Botifoll, M., … Katsaros, G. (2021). A singlet triplet hole spin qubit in planar Ge. Nature Materials. Springer Nature. https://doi.org/10.1038/s41563-021-01022-2"},"article_type":"original","page":"1106–1112","date_published":"2021-08-01T00:00:00Z","scopus_import":"1","day":"01","article_processing_charge":"No","year":"2021","acknowledgement":"This research was supported by the Scientific Service Units of Institute of Science and Technology (IST) Austria through resources provided by the Miba Machine Shop and the nanofabrication facility, and was made possible with the support of the NOMIS Foundation. This project has received funding from the European Union’s Horizon 2020 research and innovation programme under Marie Sklodowska-Curie grant agreements no. 844511 and no. 75441, and by the Austrian Science Fund FWF-P 30207 project. A.B. acknowledges support from the European Union Horizon 2020 FET project microSPIRE, no. 766955. M. Botifoll and J.A. acknowledge funding from Generalitat de Catalunya 2017 SGR 327. The Catalan Institute of Nanoscience and Nanotechnology (ICN2) is supported by the Severo Ochoa programme from the Spanish Ministery of Economy (MINECO) (grant no. SEV-2017-0706) and is funded by the Catalonian Research Centre (CERCA) Programme, Generalitat de Catalunya. Part of the present work has been performed within the framework of the Universitat Autónoma de Barcelona Materials Science PhD programme. Part of the HAADF scanning transmission electron microscopy was conducted in the Laboratorio de Microscopias Avanzadas at Instituto de Nanociencia de Aragon, Universidad de Zaragoza. ICN2 acknowledge support from the Spanish Superior Council of Scientific Research (CSIC) Research Platform on Quantum Technologies PTI-001. M.B. acknowledges funding from the Catalan Agency for Management of University and Research Grants (AGAUR) Generalitat de Catalunya formation of investigators (FI) PhD grant.","publication_status":"published","department":[{"_id":"GeKa"},{"_id":"NanoFab"},{"_id":"GradSch"}],"publisher":"Springer Nature","author":[{"id":"4C473F58-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-7197-4801","first_name":"Daniel","last_name":"Jirovec","full_name":"Jirovec, Daniel"},{"full_name":"Hofmann, Andrea C","last_name":"Hofmann","first_name":"Andrea C","id":"340F461A-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Ballabio, Andrea","first_name":"Andrea","last_name":"Ballabio"},{"full_name":"Mutter, Philipp M.","first_name":"Philipp M.","last_name":"Mutter"},{"last_name":"Tavani","first_name":"Giulio","full_name":"Tavani, Giulio"},{"full_name":"Botifoll, Marc","last_name":"Botifoll","first_name":"Marc"},{"full_name":"Crippa, Alessandro","first_name":"Alessandro","last_name":"Crippa","id":"1F2B21A2-F6E7-11E9-9B82-F7DBE5697425","orcid":"0000-0002-2968-611X"},{"id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","last_name":"Kukucka","first_name":"Josip","full_name":"Kukucka, Josip"},{"full_name":"Sagi, Oliver","last_name":"Sagi","first_name":"Oliver","id":"71616374-A8E9-11E9-A7CA-09ECE5697425"},{"full_name":"Martins, Frederico","orcid":"0000-0003-2668-2401","id":"38F80F9A-1CB8-11EA-BC76-B49B3DDC885E","last_name":"Martins","first_name":"Frederico"},{"id":"e0390f72-f6e0-11ea-865d-862393336714","first_name":"Jaime","last_name":"Saez Mollejo","full_name":"Saez Mollejo, Jaime"},{"first_name":"Ivan","last_name":"Prieto Gonzalez","id":"2A307FE2-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-7370-5357","full_name":"Prieto Gonzalez, Ivan"},{"full_name":"Borovkov, Maksim","last_name":"Borovkov","first_name":"Maksim","id":"2ac7a0a2-3562-11eb-9256-fbd18ea55087"},{"full_name":"Arbiol, Jordi","first_name":"Jordi","last_name":"Arbiol"},{"first_name":"Daniel","last_name":"Chrastina","full_name":"Chrastina, Daniel"},{"last_name":"Isella","first_name":"Giovanni","full_name":"Isella, Giovanni"},{"full_name":"Katsaros, Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","first_name":"Georgios","last_name":"Katsaros"}],"related_material":{"link":[{"description":"News on IST Homepage","relation":"press_release","url":"https://ist.ac.at/en/news/quantum-computing-with-holes/"}],"record":[{"id":"9323","relation":"research_data","status":"public"},{"id":"10058","status":"public","relation":"dissertation_contains"}]},"date_updated":"2024-03-28T23:30:27Z","date_created":"2020-12-02T10:50:47Z","volume":20,"ec_funded":1,"external_id":{"isi":["000657596400001"],"arxiv":["2011.13755"]},"main_file_link":[{"open_access":"1","url":"https://arxiv.org/abs/2011.13755"}],"oa":1,"isi":1,"quality_controlled":"1","project":[{"call_identifier":"H2020","name":"Majorana bound states in Ge/SiGe heterostructures","_id":"26A151DA-B435-11E9-9278-68D0E5697425","grant_number":"844511"},{"_id":"260C2330-B435-11E9-9278-68D0E5697425","grant_number":"754411","call_identifier":"H2020","name":"ISTplus - Postdoctoral Fellowships"},{"name":"Hole spin orbit qubits in Ge quantum wells","call_identifier":"FWF","grant_number":"P30207","_id":"2641CE5E-B435-11E9-9278-68D0E5697425"},{"name":"Hybrid Semiconductor - Superconductor Quantum Devices","_id":"262116AA-B435-11E9-9278-68D0E5697425"}],"doi":"10.1038/s41563-021-01022-2","acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"language":[{"iso":"eng"}],"month":"08","publication_identifier":{"eissn":["1476-4660"],"issn":["1476-1122"]}},{"article_processing_charge":"No","day":"27","month":"07","language":[{"iso":"eng"}],"acknowledged_ssus":[{"_id":"NanoFab"}],"doi":"10.48550/arXiv.2107.12975","date_published":"2021-07-27T00:00:00Z","project":[{"grant_number":"P30207","_id":"2641CE5E-B435-11E9-9278-68D0E5697425","call_identifier":"FWF","name":"Hole spin orbit qubits in Ge quantum wells"}],"main_file_link":[{"url":"https://doi.org/10.48550/arXiv.2107.12975","open_access":"1"}],"citation":{"ista":"Severin B, Lennon DT, Camenzind LC, Vigneau F, Fedele F, Jirovec D, Ballabio A, Chrastina D, Isella G, Kruijf M de, Carballido MJ, Svab S, Kuhlmann AV, Braakman FR, Geyer S, Froning FNM, Moon H, Osborne MA, Sejdinovic D, Katsaros G, Zumbühl DM, Briggs GAD, Ares N. Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. arXiv, 2107.12975.","apa":"Severin, B., Lennon, D. T., Camenzind, L. C., Vigneau, F., Fedele, F., Jirovec, D., … Ares, N. (n.d.). Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. arXiv. https://doi.org/10.48550/arXiv.2107.12975","ieee":"B. Severin et al., “Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning,” arXiv. .","ama":"Severin B, Lennon DT, Camenzind LC, et al. Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. arXiv. doi:10.48550/arXiv.2107.12975","chicago":"Severin, B., D. T. Lennon, L. C. Camenzind, F. Vigneau, F. Fedele, Daniel Jirovec, A. Ballabio, et al. “Cross-Architecture Tuning of Silicon and SiGe-Based Quantum Devices Using Machine Learning.” ArXiv, n.d. https://doi.org/10.48550/arXiv.2107.12975.","mla":"Severin, B., et al. “Cross-Architecture Tuning of Silicon and SiGe-Based Quantum Devices Using Machine Learning.” ArXiv, 2107.12975, doi:10.48550/arXiv.2107.12975.","short":"B. Severin, D.T. Lennon, L.C. Camenzind, F. Vigneau, F. Fedele, D. Jirovec, A. Ballabio, D. Chrastina, G. Isella, M. de Kruijf, M.J. Carballido, S. Svab, A.V. Kuhlmann, F.R. Braakman, S. Geyer, F.N.M. Froning, H. Moon, M.A. Osborne, D. Sejdinovic, G. Katsaros, D.M. Zumbühl, G.A.D. Briggs, N. Ares, ArXiv (n.d.)."},"oa":1,"external_id":{"arxiv":["2107.12975"]},"publication":"arXiv","abstract":[{"text":"The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.","lang":"eng"}],"type":"preprint","article_number":"2107.12975","oa_version":"Preprint","date_updated":"2024-03-28T23:30:27Z","date_created":"2021-10-01T12:40:22Z","related_material":{"record":[{"relation":"dissertation_contains","status":"public","id":"10058"}]},"author":[{"full_name":"Severin, B.","first_name":"B.","last_name":"Severin"},{"first_name":"D. T.","last_name":"Lennon","full_name":"Lennon, D. T."},{"first_name":"L. C.","last_name":"Camenzind","full_name":"Camenzind, L. C."},{"first_name":"F.","last_name":"Vigneau","full_name":"Vigneau, F."},{"full_name":"Fedele, F.","first_name":"F.","last_name":"Fedele"},{"first_name":"Daniel","last_name":"Jirovec","id":"4C473F58-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-7197-4801","full_name":"Jirovec, Daniel"},{"full_name":"Ballabio, A.","last_name":"Ballabio","first_name":"A."},{"last_name":"Chrastina","first_name":"D.","full_name":"Chrastina, D."},{"last_name":"Isella","first_name":"G.","full_name":"Isella, G."},{"full_name":"Kruijf, M. de","first_name":"M. de","last_name":"Kruijf"},{"full_name":"Carballido, M. J.","first_name":"M. J.","last_name":"Carballido"},{"full_name":"Svab, S.","last_name":"Svab","first_name":"S."},{"first_name":"A. V.","last_name":"Kuhlmann","full_name":"Kuhlmann, A. V."},{"first_name":"F. R.","last_name":"Braakman","full_name":"Braakman, F. R."},{"first_name":"S.","last_name":"Geyer","full_name":"Geyer, S."},{"last_name":"Froning","first_name":"F. N. M.","full_name":"Froning, F. N. M."},{"full_name":"Moon, H.","last_name":"Moon","first_name":"H."},{"full_name":"Osborne, M. A.","first_name":"M. A.","last_name":"Osborne"},{"full_name":"Sejdinovic, D.","first_name":"D.","last_name":"Sejdinovic"},{"orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios","full_name":"Katsaros, Georgios"},{"full_name":"Zumbühl, D. M.","last_name":"Zumbühl","first_name":"D. M."},{"full_name":"Briggs, G. A. D.","last_name":"Briggs","first_name":"G. A. D."},{"full_name":"Ares, N.","first_name":"N.","last_name":"Ares"}],"department":[{"_id":"GeKa"}],"status":"public","publication_status":"submitted","title":"Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning","acknowledgement":"We acknowledge Ang Li, Erik P. A. M. Bakkers (University of Eindhoven) for the fabrication of the Ge/Si nanowire. This work was supported by the Royal Society, the EPSRC National Quantum Technology Hub in Networked Quantum Information Technology (EP/M013243/1), Quantum Technology Capital (EP/N014995/1), EPSRC Platform Grant\r\n(EP/R029229/1), the European Research Council (Grant agreement 948932), the Swiss Nanoscience Institute, the\r\nNCCR SPIN, the EU H2020 European Microkelvin Platform EMP grant No. 824109, the Scientific Service Units\r\nof IST Austria through resources provided by the nanofabrication facility and, the FWF-P30207 project. This publication was also made possible through support from Templeton World Charity Foundation and John Templeton Foundation. The opinions expressed in this publication are those of the authors and do not necessarily reflect the views of the Templeton Foundations.","_id":"10066","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","year":"2021"},{"author":[{"last_name":"Katsaros","first_name":"Georgios","orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Katsaros, Georgios"}],"contributor":[{"first_name":"Kushagra","last_name":"Aggarwal","contributor_type":"project_member","id":"b22ab905-3539-11eb-84c3-fc159dcd79cb"},{"id":"340F461A-F248-11E8-B48F-1D18A9856A87","contributor_type":"project_member","last_name":"Hofmann","first_name":"Andrea C"},{"id":"4C473F58-F248-11E8-B48F-1D18A9856A87","first_name":"Daniel","last_name":"Jirovec","contributor_type":"project_member"},{"first_name":"Ivan","last_name":"Prieto 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Aggarwal, et. al. \r\nThe measurements were done using Labber Software and the data is stored in the hdf5 file format. The files can be opened using either the Labber Log Browser (https://labber.org/overview/) or Labber Python API (http://labber.org/online-doc/api/LogFile.html).\r\n","lang":"eng"}],"type":"research_data","doi":"10.15479/AT:ISTA:8834","date_published":"2020-12-02T00:00:00Z","tmp":{"short":"CC0 (1.0)","image":"/images/cc_0.png","legal_code_url":"https://creativecommons.org/publicdomain/zero/1.0/legalcode","name":"Creative Commons Public Domain Dedication (CC0 1.0)"},"oa":1,"citation":{"ama":"Katsaros G. Enhancement of proximity induced superconductivity in planar Germanium. 2020. doi:10.15479/AT:ISTA:8834","ista":"Katsaros G. 2020. Enhancement of proximity induced superconductivity in planar Germanium, Institute of Science and Technology Austria, 10.15479/AT:ISTA:8834.","apa":"Katsaros, G. (2020). Enhancement of proximity induced superconductivity in planar Germanium. 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This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility. F.L. thanks support from DOE (Grant No. DE‐FG02‐04ER46148). H.H. thanks the Startup Funding from Xi'an Jiaotong University.","volume":32,"date_updated":"2024-02-21T12:42:12Z","date_created":"2020-02-28T09:47:00Z","related_material":{"record":[{"id":"7996","status":"public","relation":"dissertation_contains"},{"id":"9222","relation":"research_data","status":"public"}]},"author":[{"last_name":"Gao","first_name":"Fei","full_name":"Gao, Fei"},{"full_name":"Wang, Jian-Huan","first_name":"Jian-Huan","last_name":"Wang"},{"full_name":"Watzinger, Hannes","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","last_name":"Watzinger","first_name":"Hannes"},{"full_name":"Hu, Hao","first_name":"Hao","last_name":"Hu"},{"last_name":"Rančić","first_name":"Marko J.","full_name":"Rančić, Marko J."},{"full_name":"Zhang, Jie-Yin","last_name":"Zhang","first_name":"Jie-Yin"},{"first_name":"Ting","last_name":"Wang","full_name":"Wang, Ting"},{"first_name":"Yuan","last_name":"Yao","full_name":"Yao, Yuan"},{"full_name":"Wang, Gui-Lei","last_name":"Wang","first_name":"Gui-Lei"},{"full_name":"Kukucka, Josip","last_name":"Kukucka","first_name":"Josip","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87"},{"first_name":"Lada","last_name":"Vukušić","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0003-2424-8636","full_name":"Vukušić, Lada"},{"full_name":"Kloeffel, Christoph","first_name":"Christoph","last_name":"Kloeffel"},{"last_name":"Loss","first_name":"Daniel","full_name":"Loss, Daniel"},{"last_name":"Liu","first_name":"Feng","full_name":"Liu, Feng"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","first_name":"Georgios","last_name":"Katsaros","full_name":"Katsaros, Georgios"},{"full_name":"Zhang, Jian-Jun","first_name":"Jian-Jun","last_name":"Zhang"}],"scopus_import":"1","has_accepted_license":"1","article_processing_charge":"Yes (via OA deal)","day":"23","article_type":"original","citation":{"ista":"Gao F, Wang J-H, Watzinger H, Hu H, Rančić MJ, Zhang J-Y, Wang T, Yao Y, Wang G-L, Kukucka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang J-J. 2020. Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. Advanced Materials. 32(16), 1906523.","ieee":"F. Gao et al., “Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling,” Advanced Materials, vol. 32, no. 16. Wiley, 2020.","apa":"Gao, F., Wang, J.-H., Watzinger, H., Hu, H., Rančić, M. J., Zhang, J.-Y., … Zhang, J.-J. (2020). Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. Advanced Materials. Wiley. https://doi.org/10.1002/adma.201906523","ama":"Gao F, Wang J-H, Watzinger H, et al. Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. Advanced Materials. 2020;32(16). doi:10.1002/adma.201906523","chicago":"Gao, Fei, Jian-Huan Wang, Hannes Watzinger, Hao Hu, Marko J. Rančić, Jie-Yin Zhang, Ting Wang, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling.” Advanced Materials. Wiley, 2020. https://doi.org/10.1002/adma.201906523.","mla":"Gao, Fei, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling.” Advanced Materials, vol. 32, no. 16, 1906523, Wiley, 2020, doi:10.1002/adma.201906523.","short":"F. Gao, J.-H. Wang, H. Watzinger, H. Hu, M.J. Rančić, J.-Y. Zhang, T. Wang, Y. Yao, G.-L. Wang, J. Kukucka, L. Vukušić, C. Kloeffel, D. Loss, F. Liu, G. Katsaros, J.-J. Zhang, Advanced Materials 32 (2020)."},"publication":"Advanced Materials","date_published":"2020-04-23T00:00:00Z","type":"journal_article","issue":"16","abstract":[{"lang":"eng","text":"Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain‐relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin–orbit coupling, with a spin–orbit length similar to that of III–V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon."}],"intvolume":" 32","title":"Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling","status":"public","ddc":["530"],"user_id":"4359f0d1-fa6c-11eb-b949-802e58b17ae8","_id":"7541","file":[{"checksum":"c622737dc295972065782558337124a2","success":1,"date_created":"2020-11-20T10:11:35Z","date_updated":"2020-11-20T10:11:35Z","relation":"main_file","file_id":"8782","file_size":5242880,"content_type":"application/pdf","creator":"dernst","access_level":"open_access","file_name":"2020_AdvancedMaterials_Gao.pdf"}],"oa_version":"Published Version"},{"doi":"10.15479/AT:ISTA:9222","date_published":"2020-03-16T00:00:00Z","oa":1,"tmp":{"short":"CC0 (1.0)","image":"/images/cc_0.png","legal_code_url":"https://creativecommons.org/publicdomain/zero/1.0/legalcode","name":"Creative Commons Public Domain Dedication (CC0 1.0)"},"citation":{"mla":"Katsaros, Georgios. Transport Data for: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling. Institute of Science and Technology Austria, 2020, doi:10.15479/AT:ISTA:9222.","short":"G. Katsaros, (2020).","chicago":"Katsaros, Georgios. “Transport Data for: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling.” Institute of Science and Technology Austria, 2020. https://doi.org/10.15479/AT:ISTA:9222.","ama":"Katsaros G. Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling. 2020. doi:10.15479/AT:ISTA:9222","ista":"Katsaros G. 2020. Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling, Institute of Science and Technology Austria, 10.15479/AT:ISTA:9222.","ieee":"G. Katsaros, “Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling.” Institute of Science and Technology Austria, 2020.","apa":"Katsaros, G. (2020). Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling. 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Burkard, V. N. Golovach, C. Kloeffel, D.Loss, P. Rabl, and M. Rancič ́ for helpful discussions. We\r\nfurther acknowledge T. Adletzberger, J. Aguilera, T. Asenov, S. Bagiante, T. Menner, L. Shafeek, P. Taus, P. Traunmüller, and D. Waldhausl for their invaluable assistance. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility, by the FWF-P 32235 project, by the National Key R&D Program of China (2016YFA0301701, 2016YFA0300600), and by the European Union’s Horizon 2020 research and innovation program under grant agreement no. 862046. All data of this publication are available at 10.15479/AT:ISTA:7689.","volume":20,"date_updated":"2024-02-21T12:44:01Z","date_created":"2020-08-06T09:25:04Z","related_material":{"record":[{"relation":"research_data","status":"public","id":"7689"}]},"author":[{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","first_name":"Georgios","last_name":"Katsaros","full_name":"Katsaros, Georgios"},{"full_name":"Kukucka, Josip","last_name":"Kukucka","first_name":"Josip","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Vukušić, Lada","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0003-2424-8636","first_name":"Lada","last_name":"Vukušić"},{"full_name":"Watzinger, Hannes","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","first_name":"Hannes","last_name":"Watzinger"},{"full_name":"Gao, Fei","last_name":"Gao","first_name":"Fei"},{"first_name":"Ting","last_name":"Wang","orcid":"0000-0002-4619-9575","full_name":"Wang, Ting"},{"last_name":"Zhang","first_name":"Jian-Jun","full_name":"Zhang, Jian-Jun"},{"first_name":"Karsten","last_name":"Held","full_name":"Held, Karsten"}],"scopus_import":"1","has_accepted_license":"1","article_processing_charge":"Yes (via OA deal)","day":"01","page":"5201-5206","article_type":"original","citation":{"short":"G. Katsaros, J. Kukucka, L. Vukušić, H. Watzinger, F. Gao, T. Wang, J.-J. Zhang, K. Held, Nano Letters 20 (2020) 5201–5206.","mla":"Katsaros, Georgios, et al. “Zero Field Splitting of Heavy-Hole States in Quantum Dots.” Nano Letters, vol. 20, no. 7, American Chemical Society, 2020, pp. 5201–06, doi:10.1021/acs.nanolett.0c01466.","chicago":"Katsaros, Georgios, Josip Kukucka, Lada Vukušić, Hannes Watzinger, Fei Gao, Ting Wang, Jian-Jun Zhang, and Karsten Held. “Zero Field Splitting of Heavy-Hole States in Quantum Dots.” Nano Letters. American Chemical Society, 2020. https://doi.org/10.1021/acs.nanolett.0c01466.","ama":"Katsaros G, Kukucka J, Vukušić L, et al. Zero field splitting of heavy-hole states in quantum dots. Nano Letters. 2020;20(7):5201-5206. doi:10.1021/acs.nanolett.0c01466","ieee":"G. Katsaros et al., “Zero field splitting of heavy-hole states in quantum dots,” Nano Letters, vol. 20, no. 7. American Chemical Society, pp. 5201–5206, 2020.","apa":"Katsaros, G., Kukucka, J., Vukušić, L., Watzinger, H., Gao, F., Wang, T., … Held, K. (2020). Zero field splitting of heavy-hole states in quantum dots. Nano Letters. American Chemical Society. https://doi.org/10.1021/acs.nanolett.0c01466","ista":"Katsaros G, Kukucka J, Vukušić L, Watzinger H, Gao F, Wang T, Zhang J-J, Held K. 2020. Zero field splitting of heavy-hole states in quantum dots. Nano Letters. 20(7), 5201–5206."},"publication":"Nano Letters","date_published":"2020-06-01T00:00:00Z","type":"journal_article","issue":"7","abstract":[{"text":"Using inelastic cotunneling spectroscopy we observe a zero field splitting within the spin triplet manifold of Ge hut wire quantum dots. The states with spin ±1 in the confinement direction are energetically favored by up to 55 μeV compared to the spin 0 triplet state because of the strong spin–orbit coupling. The reported effect should be observable in a broad class of strongly confined hole quantum-dot systems and might need to be considered when operating hole spin qubits.","lang":"eng"}],"intvolume":" 20","ddc":["530"],"title":"Zero field splitting of heavy-hole states in quantum dots","status":"public","_id":"8203","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","oa_version":"Published Version","file":[{"creator":"dernst","file_size":3308906,"content_type":"application/pdf","access_level":"open_access","file_name":"2020_NanoLetters_Katsaros.pdf","success":1,"date_created":"2020-08-06T09:35:37Z","date_updated":"2020-08-06T09:35:37Z","file_id":"8204","relation":"main_file"}]},{"user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","_id":"7689","year":"2020","status":"public","title":"Supplementary data for \"Zero field splitting of heavy-hole states in quantum dots\"","ddc":["530"],"publisher":"Institute of Science and Technology Austria","department":[{"_id":"GeKa"}],"author":[{"last_name":"Katsaros","first_name":"Georgios","orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Katsaros, Georgios"}],"related_material":{"record":[{"id":"8203","status":"public","relation":"used_in_publication"}]},"contributor":[{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","first_name":"Georgios","last_name":"Katsaros","contributor_type":"contact_person"}],"date_updated":"2024-02-21T12:44:02Z","date_created":"2020-05-01T15:14:46Z","oa_version":"Published Version","file":[{"access_level":"open_access","file_name":"DOI_ZeroFieldSplitting.zip","file_size":5514403,"content_type":"application/x-zip-compressed","creator":"gkatsaro","relation":"main_file","file_id":"7786","checksum":"d23c0cb9e2d19e14e2f902b88b97c05d","date_updated":"2020-07-14T12:48:02Z","date_created":"2020-05-01T15:13:28Z"}],"type":"research_data","abstract":[{"lang":"eng","text":"These are the supplementary research data to the publication \"Zero field splitting of heavy-hole states in quantum dots\". All matrix files have the same format. Within each column the bias voltage is changed. Each column corresponds to either a different gate voltage or magnetic field. The voltage values are given in mV, the current values in pA. Find a specific description in the included Readme file.\r\n"}],"file_date_updated":"2020-07-14T12:48:02Z","ec_funded":1,"tmp":{"short":"CC0 (1.0)","image":"/images/cc_0.png","legal_code_url":"https://creativecommons.org/publicdomain/zero/1.0/legalcode","name":"Creative Commons Public Domain Dedication (CC0 1.0)"},"oa":1,"citation":{"apa":"Katsaros, G. (2020). Supplementary data for “Zero field splitting of heavy-hole states in quantum dots.” Institute of Science and Technology Austria. https://doi.org/10.15479/AT:ISTA:7689","ieee":"G. Katsaros, “Supplementary data for ‘Zero field splitting of heavy-hole states in quantum dots.’” Institute of Science and Technology Austria, 2020.","ista":"Katsaros G. 2020. Supplementary data for ‘Zero field splitting of heavy-hole states in quantum dots’, Institute of Science and Technology Austria, 10.15479/AT:ISTA:7689.","ama":"Katsaros G. Supplementary data for “Zero field splitting of heavy-hole states in quantum dots.” 2020. doi:10.15479/AT:ISTA:7689","chicago":"Katsaros, Georgios. “Supplementary Data for ‘Zero Field Splitting of Heavy-Hole States in Quantum Dots.’” Institute of Science and Technology Austria, 2020. https://doi.org/10.15479/AT:ISTA:7689.","short":"G. Katsaros, (2020).","mla":"Katsaros, Georgios. Supplementary Data for “Zero Field Splitting of Heavy-Hole States in Quantum Dots.” Institute of Science and Technology Austria, 2020, doi:10.15479/AT:ISTA:7689."},"project":[{"call_identifier":"H2020","name":"TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS","_id":"237E5020-32DE-11EA-91FC-C7463DDC885E","grant_number":"862046"},{"_id":"237B3DA4-32DE-11EA-91FC-C7463DDC885E","grant_number":"P32235","call_identifier":"FWF","name":"Towards scalable hut wire quantum devices"}],"date_published":"2020-05-01T00:00:00Z","doi":"10.15479/AT:ISTA:7689","month":"05","day":"01","has_accepted_license":"1","article_processing_charge":"No"},{"language":[{"iso":"eng"}],"acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"external_id":{"arxiv":["2012.00322"]},"oa":1,"project":[{"_id":"262116AA-B435-11E9-9278-68D0E5697425","name":"Hybrid Semiconductor - Superconductor Quantum Devices"},{"grant_number":"844511","_id":"26A151DA-B435-11E9-9278-68D0E5697425","name":"Majorana bound states in Ge/SiGe heterostructures","call_identifier":"H2020"},{"_id":"237E5020-32DE-11EA-91FC-C7463DDC885E","grant_number":"862046","call_identifier":"H2020","name":"TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS"}],"month":"12","related_material":{"record":[{"id":"10559","relation":"later_version","status":"public"},{"id":"8834","status":"public","relation":"research_data"},{"status":"public","relation":"dissertation_contains","id":"10058"}]},"author":[{"full_name":"Aggarwal, Kushagra","id":"b22ab905-3539-11eb-84c3-fc159dcd79cb","orcid":"0000-0001-9985-9293","first_name":"Kushagra","last_name":"Aggarwal"},{"full_name":"Hofmann, Andrea C","first_name":"Andrea C","last_name":"Hofmann","id":"340F461A-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Jirovec, Daniel","orcid":"0000-0002-7197-4801","id":"4C473F58-F248-11E8-B48F-1D18A9856A87","last_name":"Jirovec","first_name":"Daniel"},{"full_name":"Prieto Gonzalez, Ivan","id":"2A307FE2-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-7370-5357","first_name":"Ivan","last_name":"Prieto Gonzalez"},{"last_name":"Sammak","first_name":"Amir","full_name":"Sammak, Amir"},{"full_name":"Botifoll, Marc","last_name":"Botifoll","first_name":"Marc"},{"first_name":"Sara","last_name":"Marti-Sanchez","full_name":"Marti-Sanchez, Sara"},{"full_name":"Veldhorst, Menno","last_name":"Veldhorst","first_name":"Menno"},{"first_name":"Jordi","last_name":"Arbiol","full_name":"Arbiol, Jordi"},{"full_name":"Scappucci, Giordano","first_name":"Giordano","last_name":"Scappucci"},{"full_name":"Katsaros, Georgios","orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios"}],"date_created":"2020-12-02T10:42:53Z","date_updated":"2024-03-28T23:30:27Z","acknowledgement":"This research and related results were made possible with the support of the NOMIS Foundation. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility, the European Union’s Horizon 2020 research and innovation program under the Marie Sklodowska-Curie grant agreement #844511 and the Grant Agreement #862046. ICN2 acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported by the Severo Ochoa\r\nprogram from Spanish MINECO (Grant No. SEV2017-0706) and is funded by the CERCA Programme / Generalitat de Catalunya. Part of the present work has been performed in the framework of Universitat Aut`onoma de Barcelona Materials Science PhD program. The HAADF-STEM microscopy was conducted in the Laboratorio de Microscopias Avanzadas at Instituto de Nanociencia de Aragon-Universidad de Zaragoza. Authors acknowledge the LMA-INA for offering access to their instruments and expertise. We acknowledge support from CSIC Research Platform on Quantum Technologies PTI-001. This project has received funding from\r\nthe European Union’s Horizon 2020 research and innovation programme under grant agreement No 823717 – ESTEEM3. M.B. acknowledges support from SUR Generalitat de Catalunya and the EU Social Fund; project ref. 2020 FI 00103. GS and MV acknowledge support through a projectruimte grant associated with the Netherlands Organization of Scientific Research (NWO).","year":"2020","department":[{"_id":"GeKa"}],"publication_status":"submitted","ec_funded":1,"file_date_updated":"2020-12-02T10:42:31Z","article_number":"2012.00322","date_published":"2020-12-02T00:00:00Z","citation":{"apa":"Aggarwal, K., Hofmann, A. C., Jirovec, D., Prieto Gonzalez, I., Sammak, A., Botifoll, M., … Katsaros, G. (n.d.). Enhancement of proximity induced superconductivity in planar Germanium. arXiv.","ieee":"K. Aggarwal et al., “Enhancement of proximity induced superconductivity in planar Germanium,” arXiv. .","ista":"Aggarwal K, Hofmann AC, Jirovec D, Prieto Gonzalez I, Sammak A, Botifoll M, Marti-Sanchez S, Veldhorst M, Arbiol J, Scappucci G, Katsaros G. Enhancement of proximity induced superconductivity in planar Germanium. arXiv, 2012.00322.","ama":"Aggarwal K, Hofmann AC, Jirovec D, et al. Enhancement of proximity induced superconductivity in planar Germanium. arXiv.","chicago":"Aggarwal, Kushagra, Andrea C Hofmann, Daniel Jirovec, Ivan Prieto Gonzalez, Amir Sammak, Marc Botifoll, Sara Marti-Sanchez, et al. “Enhancement of Proximity Induced Superconductivity in Planar Germanium.” ArXiv, n.d.","short":"K. Aggarwal, A.C. Hofmann, D. Jirovec, I. Prieto Gonzalez, A. Sammak, M. Botifoll, S. Marti-Sanchez, M. Veldhorst, J. Arbiol, G. Scappucci, G. Katsaros, ArXiv (n.d.).","mla":"Aggarwal, Kushagra, et al. “Enhancement of Proximity Induced Superconductivity in Planar Germanium.” ArXiv, 2012.00322."},"publication":"arXiv","article_processing_charge":"No","has_accepted_license":"1","day":"02","file":[{"file_id":"8832","relation":"main_file","checksum":"22a612e206232fa94b138b2c2f957582","date_updated":"2020-12-02T10:42:31Z","date_created":"2020-12-02T10:42:31Z","access_level":"open_access","file_name":"Superconducting_2D_Ge.pdf","creator":"gkatsaro","content_type":"application/pdf","file_size":1697939}],"oa_version":"Submitted Version","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","_id":"8831","status":"public","ddc":["530"],"title":"Enhancement of proximity induced superconductivity in planar Germanium","abstract":[{"lang":"eng","text":"Holes in planar Ge have high mobilities, strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising candidate for hybrid superconductorsemiconductor devices. This is further motivated by the observation of supercurrent transport in planar Ge Josephson Field effect transistors (JoFETs). A key challenge towards hybrid germanium quantum technology is the design of high quality interfaces and superconducting contacts that are robust against magnetic fields. By combining the assets of Al, which has a long superconducting coherence, and Nb, which has a significant superconducting gap, we form low-disordered JoFETs with large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip."}],"type":"preprint"},{"article_number":"1910.05841","type":"preprint","abstract":[{"lang":"eng","text":"We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In conclusion, Ge/SiGe possesses all ingredients necessary for building a singlet-triplet qubit."}],"ec_funded":1,"title":"Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits","status":"public","publication_status":"submitted","department":[{"_id":"GeKa"}],"acknowledgement":"We thank Matthias Brauns for helpful discussions and careful proofreading of the manuscript. This project has received funding from the European Union’s Horizon 2020 research and innovation program under the Marie Sklodowska-Curie grant agreement No 844511 and from the FWF project P30207. The research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA machine shop and the nanofabrication\r\nfacility.","_id":"10065","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","year":"2019","date_updated":"2024-03-28T23:30:27Z","date_created":"2021-10-01T12:14:51Z","oa_version":"Preprint","author":[{"full_name":"Hofmann, Andrea C","last_name":"Hofmann","first_name":"Andrea C","id":"340F461A-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Jirovec, Daniel","id":"4C473F58-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-7197-4801","first_name":"Daniel","last_name":"Jirovec"},{"full_name":"Borovkov, Maxim","last_name":"Borovkov","first_name":"Maxim"},{"id":"2A307FE2-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-7370-5357","first_name":"Ivan","last_name":"Prieto Gonzalez","full_name":"Prieto Gonzalez, Ivan"},{"last_name":"Ballabio","first_name":"Andrea","full_name":"Ballabio, Andrea"},{"first_name":"Jacopo","last_name":"Frigerio","full_name":"Frigerio, Jacopo"},{"full_name":"Chrastina, Daniel","first_name":"Daniel","last_name":"Chrastina"},{"full_name":"Isella, Giovanni","first_name":"Giovanni","last_name":"Isella"},{"full_name":"Katsaros, Georgios","orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios"}],"related_material":{"record":[{"id":"10058","status":"public","relation":"dissertation_contains"}]},"day":"13","month":"10","article_processing_charge":"No","project":[{"grant_number":"844511","_id":"26A151DA-B435-11E9-9278-68D0E5697425","call_identifier":"H2020","name":"Majorana bound states in Ge/SiGe heterostructures"},{"grant_number":"P30207","_id":"2641CE5E-B435-11E9-9278-68D0E5697425","call_identifier":"FWF","name":"Hole spin orbit qubits in Ge quantum wells"}],"publication":"arXiv","external_id":{"arxiv":["1910.05841"]},"main_file_link":[{"url":"https://arxiv.org/abs/1910.05841","open_access":"1"}],"citation":{"ama":"Hofmann AC, Jirovec D, Borovkov M, et al. Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits. arXiv. doi:10.48550/arXiv.1910.05841","ieee":"A. C. Hofmann et al., “Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits,” arXiv. .","apa":"Hofmann, A. C., Jirovec, D., Borovkov, M., Prieto Gonzalez, I., Ballabio, A., Frigerio, J., … Katsaros, G. (n.d.). Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits. arXiv. https://doi.org/10.48550/arXiv.1910.05841","ista":"Hofmann AC, Jirovec D, Borovkov M, Prieto Gonzalez I, Ballabio A, Frigerio J, Chrastina D, Isella G, Katsaros G. Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits. arXiv, 1910.05841.","short":"A.C. Hofmann, D. Jirovec, M. Borovkov, I. Prieto Gonzalez, A. Ballabio, J. Frigerio, D. Chrastina, G. Isella, G. Katsaros, ArXiv (n.d.).","mla":"Hofmann, Andrea C., et al. “Assessing the Potential of Ge/SiGe Quantum Dots as Hosts for Singlet-Triplet Qubits.” ArXiv, 1910.05841, doi:10.48550/arXiv.1910.05841.","chicago":"Hofmann, Andrea C, Daniel Jirovec, Maxim Borovkov, Ivan Prieto Gonzalez, Andrea Ballabio, Jacopo Frigerio, Daniel Chrastina, Giovanni Isella, and Georgios Katsaros. “Assessing the Potential of Ge/SiGe Quantum Dots as Hosts for Singlet-Triplet Qubits.” ArXiv, n.d. https://doi.org/10.48550/arXiv.1910.05841."},"oa":1,"acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"language":[{"iso":"eng"}],"date_published":"2019-10-13T00:00:00Z","doi":"10.48550/arXiv.1910.05841"},{"tmp":{"name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png"},"external_id":{"isi":["000445560800010"]},"oa":1,"project":[{"name":"Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires","call_identifier":"FP7","grant_number":"335497","_id":"25517E86-B435-11E9-9278-68D0E5697425"},{"name":"Loch Spin-Qubits und Majorana-Fermionen in Germanium","call_identifier":"FWF","grant_number":"Y00715","_id":"2552F888-B435-11E9-9278-68D0E5697425"}],"quality_controlled":"1","isi":1,"doi":"10.1038/s41467-018-06418-4","language":[{"iso":"eng"}],"acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"month":"09","year":"2018","department":[{"_id":"GeKa"}],"publisher":"Nature Publishing Group","publication_status":"published","related_material":{"record":[{"relation":"popular_science","id":"7977"},{"relation":"dissertation_contains","status":"public","id":"7996"}]},"author":[{"id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","last_name":"Watzinger","first_name":"Hannes","full_name":"Watzinger, Hannes"},{"full_name":"Kukucka, Josip","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","last_name":"Kukucka","first_name":"Josip"},{"full_name":"Vukusic, Lada","last_name":"Vukusic","first_name":"Lada","orcid":"0000-0003-2424-8636","id":"31E9F056-F248-11E8-B48F-1D18A9856A87"},{"first_name":"Fei","last_name":"Gao","full_name":"Gao, Fei"},{"first_name":"Ting","last_name":"Wang","full_name":"Wang, Ting"},{"full_name":"Schäffler, Friedrich","first_name":"Friedrich","last_name":"Schäffler"},{"last_name":"Zhang","first_name":"Jian","full_name":"Zhang, Jian"},{"full_name":"Katsaros, Georgios","orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios"}],"volume":9,"date_created":"2018-12-11T11:44:30Z","date_updated":"2023-09-08T11:44:02Z","ec_funded":1,"file_date_updated":"2020-07-14T12:48:02Z","citation":{"ama":"Watzinger H, Kukucka J, Vukušić L, et al. A germanium hole spin qubit. Nature Communications. 2018;9(3902). doi:10.1038/s41467-018-06418-4","ista":"Watzinger H, Kukucka J, Vukušić L, Gao F, Wang T, Schäffler F, Zhang J, Katsaros G. 2018. A germanium hole spin qubit. Nature Communications. 9(3902).","ieee":"H. Watzinger et al., “A germanium hole spin qubit,” Nature Communications, vol. 9, no. 3902. Nature Publishing Group, 2018.","apa":"Watzinger, H., Kukucka, J., Vukušić, L., Gao, F., Wang, T., Schäffler, F., … Katsaros, G. (2018). A germanium hole spin qubit. Nature Communications. Nature Publishing Group. https://doi.org/10.1038/s41467-018-06418-4","mla":"Watzinger, Hannes, et al. “A Germanium Hole Spin Qubit.” Nature Communications, vol. 9, no. 3902, Nature Publishing Group, 2018, doi:10.1038/s41467-018-06418-4.","short":"H. Watzinger, J. Kukucka, L. Vukušić, F. Gao, T. Wang, F. Schäffler, J. Zhang, G. Katsaros, Nature Communications 9 (2018).","chicago":"Watzinger, Hannes, Josip Kukucka, Lada Vukušić, Fei Gao, Ting Wang, Friedrich Schäffler, Jian Zhang, and Georgios Katsaros. “A Germanium Hole Spin Qubit.” Nature Communications. Nature Publishing Group, 2018. https://doi.org/10.1038/s41467-018-06418-4."},"publication":"Nature Communications","article_type":"original","date_published":"2018-09-25T00:00:00Z","scopus_import":"1","article_processing_charge":"Yes","has_accepted_license":"1","day":"25","_id":"77","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","intvolume":" 9","ddc":["530"],"title":"A germanium hole spin qubit","status":"public","file":[{"creator":"dernst","file_size":1063469,"content_type":"application/pdf","access_level":"open_access","file_name":"2018_NatureComm_Watzinger.pdf","checksum":"e7148c10a64497e279c4de570b6cc544","date_updated":"2020-07-14T12:48:02Z","date_created":"2018-12-17T10:28:30Z","file_id":"5687","relation":"main_file"}],"oa_version":"Published Version","type":"journal_article","issue":"3902 ","abstract":[{"lang":"eng","text":"Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate two-axis control of a spin 3/2 qubit in natural Ge. The qubit is formed in a hut wire double quantum dot device. The Pauli spin blockade principle allowed us to demonstrate electric dipole spin resonance by applying a radio frequency electric field to one of the electrodes defining the double quantum dot. Coherent hole spin oscillations with Rabi frequencies reaching 140 MHz are demonstrated and dephasing times of 130 ns are measured. The reported results emphasize the potential of Ge as a platform for fast and electrically tunable hole spin qubit devices."}]},{"tmp":{"name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png"},"oa":1,"external_id":{"pmid":["30359041"],"isi":["000451102100064"]},"isi":1,"quality_controlled":"1","project":[{"call_identifier":"FP7","name":"Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires","_id":"25517E86-B435-11E9-9278-68D0E5697425","grant_number":"335497"}],"doi":"10.1021/acs.nanolett.8b03217","acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"language":[{"iso":"eng"}],"month":"10","publication_identifier":{"issn":["15306984"]},"year":"2018","pmid":1,"publication_status":"published","publisher":"American Chemical Society","department":[{"_id":"GeKa"}],"author":[{"full_name":"Vukušić, Lada","last_name":"Vukušić","first_name":"Lada","orcid":"0000-0003-2424-8636","id":"31E9F056-F248-11E8-B48F-1D18A9856A87"},{"id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","last_name":"Kukucka","first_name":"Josip","full_name":"Kukucka, Josip"},{"full_name":"Watzinger, Hannes","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","last_name":"Watzinger","first_name":"Hannes"},{"full_name":"Milem, Joshua M","first_name":"Joshua M","last_name":"Milem","id":"4CDE0A96-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Schäffler, Friedrich","first_name":"Friedrich","last_name":"Schäffler"},{"orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios","full_name":"Katsaros, Georgios"}],"related_material":{"record":[{"id":"7977","relation":"popular_science"},{"id":"69","status":"public","relation":"dissertation_contains"},{"id":"7996","relation":"dissertation_contains","status":"public"}]},"date_created":"2018-12-11T11:44:13Z","date_updated":"2023-09-18T09:30:37Z","volume":18,"file_date_updated":"2020-07-14T12:45:37Z","publist_id":"8032","ec_funded":1,"publication":"Nano Letters","citation":{"ama":"Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. Single-shot readout of hole spins in Ge. Nano Letters. 2018;18(11):7141-7145. doi:10.1021/acs.nanolett.8b03217","ista":"Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. 2018. Single-shot readout of hole spins in Ge. Nano Letters. 18(11), 7141–7145.","apa":"Vukušić, L., Kukucka, J., Watzinger, H., Milem, J. M., Schäffler, F., & Katsaros, G. (2018). Single-shot readout of hole spins in Ge. Nano Letters. American Chemical Society. https://doi.org/10.1021/acs.nanolett.8b03217","ieee":"L. Vukušić, J. Kukucka, H. Watzinger, J. M. Milem, F. Schäffler, and G. Katsaros, “Single-shot readout of hole spins in Ge,” Nano Letters, vol. 18, no. 11. American Chemical Society, pp. 7141–7145, 2018.","mla":"Vukušić, Lada, et al. “Single-Shot Readout of Hole Spins in Ge.” Nano Letters, vol. 18, no. 11, American Chemical Society, 2018, pp. 7141–45, doi:10.1021/acs.nanolett.8b03217.","short":"L. Vukušić, J. Kukucka, H. Watzinger, J.M. Milem, F. Schäffler, G. Katsaros, Nano Letters 18 (2018) 7141–7145.","chicago":"Vukušić, Lada, Josip Kukucka, Hannes Watzinger, Joshua M Milem, Friedrich Schäffler, and Georgios Katsaros. “Single-Shot Readout of Hole Spins in Ge.” Nano Letters. American Chemical Society, 2018. https://doi.org/10.1021/acs.nanolett.8b03217."},"page":"7141 - 7145","date_published":"2018-10-25T00:00:00Z","scopus_import":"1","day":"25","has_accepted_license":"1","article_processing_charge":"No","_id":"23","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","title":"Single-shot readout of hole spins in Ge","ddc":["530"],"status":"public","intvolume":" 18","pubrep_id":"1065","file":[{"checksum":"3e6034a94c6b5335e939145d88bdb371","date_created":"2018-12-12T10:16:08Z","date_updated":"2020-07-14T12:45:37Z","relation":"main_file","file_id":"5194","content_type":"application/pdf","file_size":1361441,"creator":"system","access_level":"open_access","file_name":"IST-2018-1065-v1+1_ACS_nanoletters_8b03217.pdf"}],"oa_version":"Published Version","type":"journal_article","abstract":[{"text":"The strong atomistic spin–orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio frequency reflectometry setup, we were able to demonstrate single-shot readout of a germanium quantum dot hole spin and measure the spin lifetime. Hole spin relaxation times of about 90 μs at 500 mT are reported, with a total readout visibility of about 70%. By analyzing separately the spin-to-charge conversion and charge readout fidelities, we have obtained insight into the processes limiting the visibilities of hole spins. The analyses suggest that high hole visibilities are feasible at realistic experimental conditions, underlying the potential of hole spins for the realization of viable qubit devices.","lang":"eng"}],"issue":"11"},{"scopus_import":"1","day":"10","has_accepted_license":"1","article_processing_charge":"No","page":"5706 - 5710","publication":"Nano Letters","citation":{"mla":"Vukušić, Lada, et al. “Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.” Nano Letters, vol. 17, no. 9, American Chemical Society, 2017, pp. 5706–10, doi:10.1021/acs.nanolett.7b02627.","short":"L. Vukušić, J. Kukucka, H. Watzinger, G. Katsaros, Nano Letters 17 (2017) 5706–5710.","chicago":"Vukušić, Lada, Josip Kukucka, Hannes Watzinger, and Georgios Katsaros. “Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.” Nano Letters. American Chemical Society, 2017. https://doi.org/10.1021/acs.nanolett.7b02627.","ama":"Vukušić L, Kukucka J, Watzinger H, Katsaros G. Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. Nano Letters. 2017;17(9):5706-5710. doi:10.1021/acs.nanolett.7b02627","ista":"Vukušić L, Kukucka J, Watzinger H, Katsaros G. 2017. Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. Nano Letters. 17(9), 5706–5710.","apa":"Vukušić, L., Kukucka, J., Watzinger, H., & Katsaros, G. (2017). Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. Nano Letters. American Chemical Society. https://doi.org/10.1021/acs.nanolett.7b02627","ieee":"L. Vukušić, J. Kukucka, H. Watzinger, and G. Katsaros, “Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry,” Nano Letters, vol. 17, no. 9. American Chemical Society, pp. 5706–5710, 2017."},"date_published":"2017-08-10T00:00:00Z","type":"journal_article","abstract":[{"lang":"eng","text":"Heavy holes confined in quantum dots are predicted to be promising candidates for the realization of spin qubits with long coherence times. Here we focus on such heavy-hole states confined in germanium hut wires. By tuning the growth density of the latter we can realize a T-like structure between two neighboring wires. Such a structure allows the realization of a charge sensor, which is electrostatically and tunnel coupled to a quantum dot, with charge-transfer signals as high as 0.3 e. By integrating the T-like structure into a radiofrequency reflectometry setup, single-shot measurements allowing the extraction of hole tunneling times are performed. The extracted tunneling times of less than 10 μs are attributed to the small effective mass of Ge heavy-hole states and pave the way toward projective spin readout measurements."}],"issue":"9","title":"Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry","status":"public","ddc":["539"],"intvolume":" 17","_id":"840","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","file":[{"file_name":"IST-2017-865-v1+1_acs.nanolett.7b02627.pdf","access_level":"open_access","creator":"system","file_size":2449546,"content_type":"application/pdf","file_id":"4951","relation":"main_file","date_updated":"2020-07-14T12:48:13Z","date_created":"2018-12-12T10:12:33Z","checksum":"761371a0129b2aa442424b9561450ece"}],"oa_version":"Published Version","pubrep_id":"865","month":"08","publication_identifier":{"issn":["15306984"]},"quality_controlled":"1","isi":1,"project":[{"call_identifier":"FP7","name":"Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires","_id":"25517E86-B435-11E9-9278-68D0E5697425","grant_number":"335497"}],"external_id":{"isi":["000411043500078"]},"tmp":{"name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png"},"oa":1,"acknowledged_ssus":[{"_id":"M-Shop"}],"language":[{"iso":"eng"}],"doi":"10.1021/acs.nanolett.7b02627","file_date_updated":"2020-07-14T12:48:13Z","ec_funded":1,"publist_id":"6808","publication_status":"published","publisher":"American Chemical Society","department":[{"_id":"GeKa"}],"year":"2017","date_updated":"2023-09-26T15:50:22Z","date_created":"2018-12-11T11:48:47Z","volume":17,"author":[{"first_name":"Lada","last_name":"Vukusic","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0003-2424-8636","full_name":"Vukusic, Lada"},{"first_name":"Josip","last_name":"Kukucka","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","full_name":"Kukucka, Josip"},{"full_name":"Watzinger, Hannes","first_name":"Hannes","last_name":"Watzinger","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Katsaros, Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","first_name":"Georgios","last_name":"Katsaros"}],"related_material":{"record":[{"id":"7977","relation":"popular_science"},{"id":"69","status":"public","relation":"dissertation_contains"},{"status":"public","relation":"dissertation_contains","id":"7996"}]}},{"month":"09","oa":1,"tmp":{"name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png"},"project":[{"grant_number":"335497","_id":"25517E86-B435-11E9-9278-68D0E5697425","call_identifier":"FP7","name":"Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires"}],"quality_controlled":"1","doi":"10.1021/acs.nanolett.6b02715","language":[{"iso":"eng"}],"ec_funded":1,"publist_id":"5941","file_date_updated":"2020-07-14T12:44:44Z","acknowledgement":"The work was supported by the EC FP7 ICT project SiSPIN no. 323841, the EC FP7 ICT project PAMS no. 610446, the ERC Starting Grant no. 335497, the FWF-I-1190-N20 project, and the Swiss NSF. We acknowledge F. Schäffler for fruitful discussions related to the hut wire growth and for giving us access to the molecular beam epitaxy system, M. Schatzl for her support in electron beam lithography, and V. Jadris ̌ko for helping us with the COMSOL simulations. Finally, we thank G. Bauer for his continuous support. ","year":"2016","department":[{"_id":"GeKa"}],"publisher":"American Chemical Society","publication_status":"published","related_material":{"record":[{"id":"7977","status":"for_moderation","relation":"popular_science"},{"relation":"dissertation_contains","status":"public","id":"7996"}]},"author":[{"full_name":"Watzinger, Hannes","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","last_name":"Watzinger","first_name":"Hannes"},{"full_name":"Kloeffel, Christoph","last_name":"Kloeffel","first_name":"Christoph"},{"orcid":"0000-0003-2424-8636","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","last_name":"Vukusic","first_name":"Lada","full_name":"Vukusic, Lada"},{"last_name":"Rossell","first_name":"Marta","full_name":"Rossell, Marta"},{"full_name":"Sessi, Violetta","first_name":"Violetta","last_name":"Sessi"},{"full_name":"Kukucka, Josip","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","first_name":"Josip","last_name":"Kukucka"},{"full_name":"Kirchschlager, Raimund","first_name":"Raimund","last_name":"Kirchschlager"},{"id":"33662F76-F248-11E8-B48F-1D18A9856A87","first_name":"Elisabeth","last_name":"Lausecker","full_name":"Lausecker, Elisabeth"},{"full_name":"Truhlar, Alisha","first_name":"Alisha","last_name":"Truhlar","id":"49CBC780-F248-11E8-B48F-1D18A9856A87"},{"first_name":"Martin","last_name":"Glaser","full_name":"Glaser, Martin"},{"full_name":"Rastelli, Armando","last_name":"Rastelli","first_name":"Armando"},{"full_name":"Fuhrer, Andreas","first_name":"Andreas","last_name":"Fuhrer"},{"full_name":"Loss, Daniel","last_name":"Loss","first_name":"Daniel"},{"full_name":"Katsaros, Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","first_name":"Georgios","last_name":"Katsaros"}],"volume":16,"date_created":"2018-12-11T11:51:24Z","date_updated":"2023-09-07T13:15:02Z","scopus_import":1,"has_accepted_license":"1","day":"22","citation":{"ama":"Watzinger H, Kloeffel C, Vukušić L, et al. Heavy-hole states in germanium hut wires. Nano Letters. 2016;16(11):6879-6885. doi:10.1021/acs.nanolett.6b02715","apa":"Watzinger, H., Kloeffel, C., Vukušić, L., Rossell, M., Sessi, V., Kukucka, J., … Katsaros, G. (2016). Heavy-hole states in germanium hut wires. Nano Letters. American Chemical Society. https://doi.org/10.1021/acs.nanolett.6b02715","ieee":"H. Watzinger et al., “Heavy-hole states in germanium hut wires,” Nano Letters, vol. 16, no. 11. American Chemical Society, pp. 6879–6885, 2016.","ista":"Watzinger H, Kloeffel C, Vukušić L, Rossell M, Sessi V, Kukucka J, Kirchschlager R, Lausecker E, Truhlar A, Glaser M, Rastelli A, Fuhrer A, Loss D, Katsaros G. 2016. Heavy-hole states in germanium hut wires. Nano Letters. 16(11), 6879–6885.","short":"H. Watzinger, C. Kloeffel, L. Vukušić, M. Rossell, V. Sessi, J. Kukucka, R. Kirchschlager, E. Lausecker, A. Truhlar, M. Glaser, A. Rastelli, A. Fuhrer, D. Loss, G. Katsaros, Nano Letters 16 (2016) 6879–6885.","mla":"Watzinger, Hannes, et al. “Heavy-Hole States in Germanium Hut Wires.” Nano Letters, vol. 16, no. 11, American Chemical Society, 2016, pp. 6879–85, doi:10.1021/acs.nanolett.6b02715.","chicago":"Watzinger, Hannes, Christoph Kloeffel, Lada Vukušić, Marta Rossell, Violetta Sessi, Josip Kukucka, Raimund Kirchschlager, et al. “Heavy-Hole States in Germanium Hut Wires.” Nano Letters. American Chemical Society, 2016. https://doi.org/10.1021/acs.nanolett.6b02715."},"publication":"Nano Letters","page":"6879 - 6885","date_published":"2016-09-22T00:00:00Z","type":"journal_article","issue":"11","abstract":[{"lang":"eng","text":"Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so-far unexplored type of nanostructure. Low-temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large anisotropy originates from a confined wave function of heavy-hole character. A light-hole admixture of less than 1% is estimated for the states of lowest energy, leading to a surprisingly large reduction of the out-of-plane g-factors compared with those for pure heavy holes. Given this tiny light-hole contribution, the spin lifetimes are expected to be very long, even in isotopically nonpurified samples."}],"user_id":"3E5EF7F0-F248-11E8-B48F-1D18A9856A87","_id":"1328","intvolume":" 16","ddc":["539"],"status":"public","title":"Heavy-hole states in germanium hut wires","pubrep_id":"664","oa_version":"Published Version","file":[{"file_name":"IST-2016-664-v1+1_acs.nanolett.6b02715.pdf","access_level":"open_access","creator":"system","file_size":535121,"content_type":"application/pdf","file_id":"5053","relation":"main_file","date_updated":"2020-07-14T12:44:44Z","date_created":"2018-12-12T10:14:04Z","checksum":"b63feece90d7b620ece49ca632e34ff3"}]},{"quality_controlled":0,"publication":"Physical Review X","oa":1,"main_file_link":[{"url":"http://arxiv.org/abs/1407.5413","open_access":"1"}],"citation":{"chicago":"Mongillo, Massimo, Panayotis Spathis, Georgios Katsaros, Silvano De Franceschi, Pascal Gentile, Riccardo Rurali, and Xavier Cartoixà. “PtSi Clustering in Silicon Probed by Transport Spectroscopy.” Physical Review X. American Physical Society, 2014. https://doi.org/10.1103/PhysRevX.3.041025.","mla":"Mongillo, Massimo, et al. “PtSi Clustering in Silicon Probed by Transport Spectroscopy.” Physical Review X, vol. 3, no. 4, American Physical Society, 2014, doi:10.1103/PhysRevX.3.041025.","short":"M. Mongillo, P. Spathis, G. Katsaros, S. De Franceschi, P. Gentile, R. Rurali, X. Cartoixà, Physical Review X 3 (2014).","ista":"Mongillo M, Spathis P, Katsaros G, De Franceschi S, Gentile P, Rurali R, Cartoixà X. 2014. PtSi clustering in silicon probed by transport spectroscopy. Physical Review X. 3(4).","ieee":"M. Mongillo et al., “PtSi clustering in silicon probed by transport spectroscopy,” Physical Review X, vol. 3, no. 4. American Physical Society, 2014.","apa":"Mongillo, M., Spathis, P., Katsaros, G., De Franceschi, S., Gentile, P., Rurali, R., & Cartoixà, X. (2014). PtSi clustering in silicon probed by transport spectroscopy. Physical Review X. American Physical Society. https://doi.org/10.1103/PhysRevX.3.041025","ama":"Mongillo M, Spathis P, Katsaros G, et al. PtSi clustering in silicon probed by transport spectroscopy. Physical Review X. 2014;3(4). doi:10.1103/PhysRevX.3.041025"},"date_published":"2014-01-01T00:00:00Z","doi":"10.1103/PhysRevX.3.041025","day":"01","month":"01","status":"public","publication_status":"published","title":"PtSi clustering in silicon probed by transport spectroscopy","publisher":"American Physical Society","intvolume":" 3","year":"2014","_id":"1761","acknowledgement":"This work was supported by the Agence Nationale de la Recherche and by the EU through the ERC Starting Grant HybridNano","date_updated":"2021-01-12T06:53:02Z","date_created":"2018-12-11T11:53:52Z","volume":3,"author":[{"full_name":"Mongillo, Massimo","last_name":"Mongillo","first_name":"Massimo"},{"first_name":"Panayotis","last_name":"Spathis","full_name":"Spathis, Panayotis N"},{"full_name":"Georgios Katsaros","first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"},{"last_name":"De Franceschi","first_name":"Silvano","full_name":"De Franceschi, Silvano"},{"full_name":"Gentile, Pascal","first_name":"Pascal","last_name":"Gentile"},{"full_name":"Rurali, Riccardo","first_name":"Riccardo","last_name":"Rurali"},{"first_name":"Xavier","last_name":"Cartoixà","full_name":"Cartoixà, Xavier"}],"type":"journal_article","extern":1,"abstract":[{"lang":"eng","text":"Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. Here, we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky-barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant-tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as a metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states."}],"publist_id":"5363","issue":"4"},{"day":"23","month":"01","publication":"Applied Physics Letters","oa":1,"main_file_link":[{"open_access":"1","url":"http://arxiv.org/abs/1307.7196"}],"citation":{"ista":"Ares N, Katsaros G, Golovach V, Zhang J, Prager A, Glazman L, Schmidt O, De Franceschi S. 2013. SiGe quantum dots for fast hole spin Rabi oscillations. Applied Physics Letters. 103(26).","ieee":"N. Ares et al., “SiGe quantum dots for fast hole spin Rabi oscillations,” Applied Physics Letters, vol. 103, no. 26. American Institute of Physics, 2013.","apa":"Ares, N., Katsaros, G., Golovach, V., Zhang, J., Prager, A., Glazman, L., … De Franceschi, S. (2013). SiGe quantum dots for fast hole spin Rabi oscillations. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.4858959","ama":"Ares N, Katsaros G, Golovach V, et al. SiGe quantum dots for fast hole spin Rabi oscillations. Applied Physics Letters. 2013;103(26). doi:10.1063/1.4858959","chicago":"Ares, Natalia, Georgios Katsaros, Vitaly Golovach, Jianjun Zhang, Aaron Prager, Leonid Glazman, Oliver Schmidt, and Silvano De Franceschi. “SiGe Quantum Dots for Fast Hole Spin Rabi Oscillations.” Applied Physics Letters. American Institute of Physics, 2013. https://doi.org/10.1063/1.4858959.","mla":"Ares, Natalia, et al. “SiGe Quantum Dots for Fast Hole Spin Rabi Oscillations.” Applied Physics Letters, vol. 103, no. 26, American Institute of Physics, 2013, doi:10.1063/1.4858959.","short":"N. Ares, G. Katsaros, V. Golovach, J. Zhang, A. Prager, L. Glazman, O. Schmidt, S. De Franceschi, Applied Physics Letters 103 (2013)."},"quality_controlled":0,"date_published":"2013-01-23T00:00:00Z","doi":"10.1063/1.4858959","type":"journal_article","abstract":[{"text":"We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100 MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique.","lang":"eng"}],"publist_id":"5364","issue":"26","extern":1,"_id":"1760","year":"2013","acknowledgement":"We acknowledge the financial support from the Nanosciences Foundation (Grenoble, France), the Commission for a Marie Curie Carrer Integration Grant, the Austrian Science Fund (FWF) for a Lise-Meitner Fellowship (M1435-N30), the DOE under Contract No. DE-FG02-08ER46482 (Yale), the European Starting Grant program, and the Agence Nationale de la Recherche","title":"SiGe quantum dots for fast hole spin Rabi oscillations","status":"public","publication_status":"published","publisher":"American Institute of Physics","intvolume":" 103","author":[{"last_name":"Ares","first_name":"Natalia","full_name":"Ares, Natalia"},{"full_name":"Georgios Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","first_name":"Georgios","last_name":"Katsaros"},{"full_name":"Golovach, Vitaly N","first_name":"Vitaly","last_name":"Golovach"},{"first_name":"Jianjun","last_name":"Zhang","full_name":"Zhang, Jianjun"},{"first_name":"Aaron","last_name":"Prager","full_name":"Prager, Aaron A"},{"last_name":"Glazman","first_name":"Leonid","full_name":"Glazman, Leonid I"},{"first_name":"Oliver","last_name":"Schmidt","full_name":"Schmidt, Oliver G"},{"full_name":"De Franceschi, Silvano","first_name":"Silvano","last_name":"De Franceschi"}],"date_updated":"2021-01-12T06:53:02Z","date_created":"2018-12-11T11:53:52Z","volume":103},{"type":"journal_article","extern":1,"publist_id":"5365","issue":"4","abstract":[{"lang":"eng","text":"We report an electric-field-induced giant modulation of the hole g factor in SiGe nanocrystals. The observed effect is ascribed to a so-far overlooked contribution to the g factor that stems from the mixing between heavy- and light-hole wave functions. We show that the relative displacement between the confined heavy- and light-hole states, occurring upon application of the electric field, alters their mixing strength leading to a strong nonmonotonic modulation of the g factor."}],"publisher":"American Physical Society","intvolume":" 110","status":"public","title":"Nature of tunable hole g factors in quantum dots","publication_status":"published","year":"2013","_id":"1759","acknowledgement":"We acknowledge financial support from the Nanosciences Foundation (Grenoble, France), DOE under Contract No. DEFG02-08ER46482 (Yale), the Agence Nationale de la Recherche, and the European Starting Grant. G. K. acknowledges support from the European Commission via a Marie Curie Carrer Integration Grant and the FWF for a Lise-Meitner Fellowship","volume":110,"date_updated":"2021-01-12T06:53:01Z","date_created":"2018-12-11T11:53:51Z","author":[{"first_name":"Natalia","last_name":"Ares","full_name":"Ares, Natalia"},{"full_name":"Golovach, Vitaly N","last_name":"Golovach","first_name":"Vitaly"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","first_name":"Georgios","last_name":"Katsaros","full_name":"Georgios Katsaros"},{"last_name":"Stoffel","first_name":"Mathieu","full_name":"Stoffel, Mathieu"},{"first_name":"Frank","last_name":"Fournel","full_name":"Fournel, Frank"},{"last_name":"Glazman","first_name":"Leonid","full_name":"Glazman, Leonid I"},{"first_name":"Oliver","last_name":"Schmidt","full_name":"Schmidt, Oliver G"},{"first_name":"Silvano","last_name":"De Franceschi","full_name":"De Franceschi, Silvano"}],"day":"23","month":"01","quality_controlled":0,"citation":{"apa":"Ares, N., Golovach, V., Katsaros, G., Stoffel, M., Fournel, F., Glazman, L., … De Franceschi, S. (2013). Nature of tunable hole g factors in quantum dots. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.110.046602","ieee":"N. Ares et al., “Nature of tunable hole g factors in quantum dots,” Physical Review Letters, vol. 110, no. 4. American Physical Society, 2013.","ista":"Ares N, Golovach V, Katsaros G, Stoffel M, Fournel F, Glazman L, Schmidt O, De Franceschi S. 2013. Nature of tunable hole g factors in quantum dots. Physical Review Letters. 110(4).","ama":"Ares N, Golovach V, Katsaros G, et al. Nature of tunable hole g factors in quantum dots. Physical Review Letters. 2013;110(4). doi:10.1103/PhysRevLett.110.046602","chicago":"Ares, Natalia, Vitaly Golovach, Georgios Katsaros, Mathieu Stoffel, Frank Fournel, Leonid Glazman, Oliver Schmidt, and Silvano De Franceschi. “Nature of Tunable Hole g Factors in Quantum Dots.” Physical Review Letters. American Physical Society, 2013. https://doi.org/10.1103/PhysRevLett.110.046602.","short":"N. Ares, V. Golovach, G. Katsaros, M. Stoffel, F. Fournel, L. Glazman, O. Schmidt, S. De Franceschi, Physical Review Letters 110 (2013).","mla":"Ares, Natalia, et al. “Nature of Tunable Hole g Factors in Quantum Dots.” Physical Review Letters, vol. 110, no. 4, American Physical Society, 2013, doi:10.1103/PhysRevLett.110.046602."},"oa":1,"main_file_link":[{"url":"http://arxiv.org/abs/1208.0476","open_access":"1"}],"publication":"Physical Review Letters","date_published":"2013-01-23T00:00:00Z","doi":"10.1103/PhysRevLett.110.046602"},{"date_updated":"2021-01-12T06:53:00Z","date_created":"2018-12-11T11:53:51Z","volume":109,"author":[{"last_name":"Zhang","first_name":"Jianjun","full_name":"Zhang, Jianjun"},{"full_name":"Georgios Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios"},{"full_name":"Montalenti, Francesco","last_name":"Montalenti","first_name":"Francesco"},{"full_name":"Scopece, Daniele","first_name":"Daniele","last_name":"Scopece"},{"first_name":"Roman","last_name":"Rezaev","full_name":"Rezaev, Roman O"},{"full_name":"Mickel, Christine H","last_name":"Mickel","first_name":"Christine"},{"first_name":"Bernd","last_name":"Rellinghaus","full_name":"Rellinghaus, Bernd"},{"full_name":"Miglio, Leo P","first_name":"Leo","last_name":"Miglio"},{"first_name":"Silvano","last_name":"De Franceschi","full_name":"De Franceschi, Silvano"},{"first_name":"Armando","last_name":"Rastelli","full_name":"Rastelli, Armando"},{"first_name":"Oliver","last_name":"Schmidt","full_name":"Schmidt, Oliver G"}],"status":"public","publication_status":"published","title":"Monolithic growth of ultrathin Ge nanowires on Si(001) ","publisher":"American Physical Society","intvolume":" 109","_id":"1757","acknowledgement":"We acknowledge the financial support by the DFG SPP1386, P. Chen and D. J. Thurmer for MBE assistance, R. Wacquez for providing the ultrathin SOI wafers, and G. Bauer, Y. Hu, X. Jehl, S. Kiravittaya, C. Klöffel, E. J. H. Lee, F. Liu, D. Loss, and S. Mahapatra for helpful discussions. G. K. acknowledges support from the European commission via a Marie Curie Carrer Integration Grant. S. D. F. acknowledges support from the European Research Council through the starting grant program","year":"2012","extern":1,"abstract":[{"lang":"eng","text":"Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existence of a preferential base width for longitudinal expansion, in quantitative agreement with the experimental findings. Despite the absence of intentional doping, the first transistor-type devices made from single wires show low-resistive electrical contacts and single-hole transport at sub-Kelvin temperatures. In view of their exceptionally small and self-defined cross section, these Ge wires hold promise for the realization of hole systems with exotic properties and provide a new development route for silicon-based nanoelectronics."}],"issue":"8","publist_id":"5367","type":"journal_article","doi":"10.1103/PhysRevLett.109.085502","date_published":"2012-08-23T00:00:00Z","quality_controlled":0,"publication":"Physical Review Letters","main_file_link":[{"open_access":"1","url":"http://arxiv.org/abs/1208.0666"}],"citation":{"apa":"Zhang, J., Katsaros, G., Montalenti, F., Scopece, D., Rezaev, R., Mickel, C., … Schmidt, O. (2012). Monolithic growth of ultrathin Ge nanowires on Si(001) . Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.109.085502","ieee":"J. Zhang et al., “Monolithic growth of ultrathin Ge nanowires on Si(001) ,” Physical Review Letters, vol. 109, no. 8. American Physical Society, 2012.","ista":"Zhang J, Katsaros G, Montalenti F, Scopece D, Rezaev R, Mickel C, Rellinghaus B, Miglio L, De Franceschi S, Rastelli A, Schmidt O. 2012. Monolithic growth of ultrathin Ge nanowires on Si(001) . Physical Review Letters. 109(8).","ama":"Zhang J, Katsaros G, Montalenti F, et al. Monolithic growth of ultrathin Ge nanowires on Si(001) . Physical Review Letters. 2012;109(8). doi:10.1103/PhysRevLett.109.085502","chicago":"Zhang, Jianjun, Georgios Katsaros, Francesco Montalenti, Daniele Scopece, Roman Rezaev, Christine Mickel, Bernd Rellinghaus, et al. “Monolithic Growth of Ultrathin Ge Nanowires on Si(001) .” Physical Review Letters. American Physical Society, 2012. https://doi.org/10.1103/PhysRevLett.109.085502.","short":"J. Zhang, G. Katsaros, F. Montalenti, D. Scopece, R. Rezaev, C. Mickel, B. Rellinghaus, L. Miglio, S. De Franceschi, A. Rastelli, O. Schmidt, Physical Review Letters 109 (2012).","mla":"Zhang, Jianjun, et al. “Monolithic Growth of Ultrathin Ge Nanowires on Si(001) .” Physical Review Letters, vol. 109, no. 8, American Physical Society, 2012, doi:10.1103/PhysRevLett.109.085502."},"oa":1,"month":"08","day":"23"},{"publist_id":"5366","issue":"18","abstract":[{"text":"We studied the low-energy states of spin-1/2 quantum dots defined in InAs/InP nanowires and coupled to aluminum superconducting leads. By varying the superconducting gap Δ with a magnetic field B we investigated the transition from strong coupling Δ≪T K to weak-coupling Δ≫T K, where T K is the Kondo temperature. Below the critical field, we observe a persisting zero-bias Kondo resonance that vanishes only for low B or higher temperatures, leaving the room to more robust subgap structures at bias voltages between Δ and 2Δ. For strong and approximately symmetric tunnel couplings, a Josephson supercurrent is observed in addition to the Kondo peak. We ascribe the coexistence of a Kondo resonance and a superconducting gap to a significant density of intragap quasiparticle states, and the finite-bias subgap structures to tunneling through Shiba states. Our results, supported by numerical calculations, own relevance also in relation to tunnel-spectroscopy experiments aiming at the observation of Majorana fermions in hybrid nanostructures.","lang":"eng"}],"extern":1,"type":"journal_article","author":[{"full_name":"Lee, Eduardo J","first_name":"Eduardo","last_name":"Lee"},{"full_name":"Jiang, Xiaocheng","first_name":"Xiaocheng","last_name":"Jiang"},{"first_name":"Ramón","last_name":"Aguado","full_name":"Aguado, Ramón"},{"first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Georgios Katsaros"},{"first_name":"Charles","last_name":"Lieber","full_name":"Lieber, Charles M"},{"full_name":"De Franceschi, Silvano","first_name":"Silvano","last_name":"De Franceschi"}],"volume":109,"date_updated":"2021-01-12T06:53:01Z","date_created":"2018-12-11T11:53:51Z","acknowledgement":"This work was supported by the EU Marie Curie program and by the Agence Nationale de la Recherche. R. A. acknowledges support from the Spanish Ministry of Science and Innovation through Grant No. FIS2009-08744","_id":"1758","year":"2012","intvolume":" 109","publisher":"American Physical Society","publication_status":"published","title":"Zero-bias anomaly in a nanowire quantum dot coupled to superconductors","status":"public","day":"31","month":"10","doi":"10.1103/PhysRevLett.109.186802","date_published":"2012-10-31T00:00:00Z","oa":1,"citation":{"apa":"Lee, E., Jiang, X., Aguado, R., Katsaros, G., Lieber, C., & De Franceschi, S. (2012). Zero-bias anomaly in a nanowire quantum dot coupled to superconductors. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.109.186802","ieee":"E. Lee, X. Jiang, R. Aguado, G. Katsaros, C. Lieber, and S. De Franceschi, “Zero-bias anomaly in a nanowire quantum dot coupled to superconductors,” Physical Review Letters, vol. 109, no. 18. American Physical Society, 2012.","ista":"Lee E, Jiang X, Aguado R, Katsaros G, Lieber C, De Franceschi S. 2012. Zero-bias anomaly in a nanowire quantum dot coupled to superconductors. Physical Review Letters. 109(18).","ama":"Lee E, Jiang X, Aguado R, Katsaros G, Lieber C, De Franceschi S. Zero-bias anomaly in a nanowire quantum dot coupled to superconductors. Physical Review Letters. 2012;109(18). doi:10.1103/PhysRevLett.109.186802","chicago":"Lee, Eduardo, Xiaocheng Jiang, Ramón Aguado, Georgios Katsaros, Charles Lieber, and Silvano De Franceschi. “Zero-Bias Anomaly in a Nanowire Quantum Dot Coupled to Superconductors.” Physical Review Letters. American Physical Society, 2012. https://doi.org/10.1103/PhysRevLett.109.186802.","short":"E. Lee, X. Jiang, R. Aguado, G. Katsaros, C. Lieber, S. De Franceschi, Physical Review Letters 109 (2012).","mla":"Lee, Eduardo, et al. “Zero-Bias Anomaly in a Nanowire Quantum Dot Coupled to Superconductors.” Physical Review Letters, vol. 109, no. 18, American Physical Society, 2012, doi:10.1103/PhysRevLett.109.186802."},"main_file_link":[{"open_access":"1","url":"http://arxiv.org/abs/1207.1259"}],"publication":"Physical Review Letters","quality_controlled":0},{"author":[{"full_name":"Mongillo, Massimo","last_name":"Mongillo","first_name":"Massimo"},{"last_name":"Spathis","first_name":"Panayotis","full_name":"Spathis, Panayotis N"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios","full_name":"Georgios Katsaros"},{"last_name":"Gentile","first_name":"Pascal","full_name":"Gentile, Pascal"},{"last_name":"De Franceschi","first_name":"Silvano","full_name":"De Franceschi, Silvano"}],"date_created":"2018-12-11T11:53:50Z","date_updated":"2021-01-12T06:53:00Z","volume":12,"acknowledgement":"This work was supported by the Agence Nationale de la Recherche (ANR) through the ACCESS and COHESION projects and by the European Commission through the Chemtronics program MEST-CT-2005-020513","_id":"1756","year":"2012","title":"Multifunctional devices and logic gates with undoped silicon nanowires","publication_status":"published","status":"public","publisher":"American Chemical Society","intvolume":" 12","abstract":[{"text":"We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature-dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode, or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one.","lang":"eng"}],"issue":"6","publist_id":"5368","extern":1,"type":"journal_article","date_published":"2012-06-13T00:00:00Z","doi":"10.1021/nl300930m","publication":"Nano Letters","main_file_link":[{"url":"http://arxiv.org/abs/1208.1465","open_access":"1"}],"oa":1,"citation":{"chicago":"Mongillo, Massimo, Panayotis Spathis, Georgios Katsaros, Pascal Gentile, and Silvano De Franceschi. “Multifunctional Devices and Logic Gates with Undoped Silicon Nanowires.” Nano Letters. American Chemical Society, 2012. https://doi.org/10.1021/nl300930m.","mla":"Mongillo, Massimo, et al. “Multifunctional Devices and Logic Gates with Undoped Silicon Nanowires.” Nano Letters, vol. 12, no. 6, American Chemical Society, 2012, pp. 3074–79, doi:10.1021/nl300930m.","short":"M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, S. De Franceschi, Nano Letters 12 (2012) 3074–3079.","ista":"Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. 2012. Multifunctional devices and logic gates with undoped silicon nanowires. Nano Letters. 12(6), 3074–3079.","apa":"Mongillo, M., Spathis, P., Katsaros, G., Gentile, P., & De Franceschi, S. (2012). Multifunctional devices and logic gates with undoped silicon nanowires. Nano Letters. American Chemical Society. https://doi.org/10.1021/nl300930m","ieee":"M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, and S. De Franceschi, “Multifunctional devices and logic gates with undoped silicon nanowires,” Nano Letters, vol. 12, no. 6. American Chemical Society, pp. 3074–3079, 2012.","ama":"Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. Multifunctional devices and logic gates with undoped silicon nanowires. Nano Letters. 2012;12(6):3074-3079. doi:10.1021/nl300930m"},"quality_controlled":0,"page":"3074 - 3079","day":"13","month":"06"},{"publist_id":"5370","extern":"1","author":[{"full_name":"Mongillo, Massimo","first_name":"Massimo","last_name":"Mongillo"},{"first_name":"Panayotis","last_name":"Spathis","full_name":"Spathis, Panayotis"},{"full_name":"Katsaros, Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios"},{"full_name":"Gentile, Pascal","first_name":"Pascal","last_name":"Gentile"},{"full_name":"Sanquer, Marc","last_name":"Sanquer","first_name":"Marc"},{"first_name":"Silvano","last_name":"De Franceschi","full_name":"De Franceschi, Silvano"}],"volume":5,"date_updated":"2021-01-12T06:52:59Z","date_created":"2018-12-11T11:53:50Z","acknowledgement":"This work was supported by the Agence Nationale de la Recherche (ANR) through the ACCESS and COHESION projects and by the European Commission through the Chemtronics program MEST-CT-2005-020513","year":"2011","publisher":"American Chemical Society","publication_status":"published","month":"09","doi":"10.1021/nn202524j","language":[{"iso":"eng"}],"oa":1,"main_file_link":[{"url":"http://arxiv.org/abs/1110.5668","open_access":"1"}],"external_id":{"arxiv":["1110.5668"]},"quality_controlled":"1","issue":"9","abstract":[{"text":"We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel- silicide devices with controlled silicon channel length down to 8 nm. ","lang":"eng"}],"type":"journal_article","oa_version":"Preprint","_id":"1754","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","intvolume":" 5","title":"Joule-assisted silicidation for short-channel silicon nanowire devices","status":"public","day":"27","date_published":"2011-09-27T00:00:00Z","citation":{"short":"M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, M. Sanquer, S. De Franceschi, ACS Nano 5 (2011) 7117–7123.","mla":"Mongillo, Massimo, et al. “Joule-Assisted Silicidation for Short-Channel Silicon Nanowire Devices.” ACS Nano, vol. 5, no. 9, American Chemical Society, 2011, pp. 7117–23, doi:10.1021/nn202524j.","chicago":"Mongillo, Massimo, Panayotis Spathis, Georgios Katsaros, Pascal Gentile, Marc Sanquer, and Silvano De Franceschi. “Joule-Assisted Silicidation for Short-Channel Silicon Nanowire Devices.” ACS Nano. American Chemical Society, 2011. https://doi.org/10.1021/nn202524j.","ama":"Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. Joule-assisted silicidation for short-channel silicon nanowire devices. ACS Nano. 2011;5(9):7117-7123. doi:10.1021/nn202524j","ieee":"M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, M. Sanquer, and S. De Franceschi, “Joule-assisted silicidation for short-channel silicon nanowire devices,” ACS Nano, vol. 5, no. 9. American Chemical Society, pp. 7117–7123, 2011.","apa":"Mongillo, M., Spathis, P., Katsaros, G., Gentile, P., Sanquer, M., & De Franceschi, S. (2011). Joule-assisted silicidation for short-channel silicon nanowire devices. ACS Nano. American Chemical Society. https://doi.org/10.1021/nn202524j","ista":"Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. 2011. Joule-assisted silicidation for short-channel silicon nanowire devices. ACS Nano. 5(9), 7117–7123."},"publication":"ACS Nano","page":"7117 - 7123"},{"date_published":"2011-12-07T00:00:00Z","doi":"10.1103/PhysRevLett.107.246601","quality_controlled":0,"main_file_link":[{"url":"http://arxiv.org/abs/1107.3919","open_access":"1"}],"citation":{"ama":"Katsaros G, Golovach V, Spathis P, et al. Observation of spin-selective tunneling in sige nanocrystals. Physical Review Letters. 2011;107(24). doi:10.1103/PhysRevLett.107.246601","apa":"Katsaros, G., Golovach, V., Spathis, P., Ares, N., Stoffel, M., Fournel, F., … De Franceschi, S. (2011). Observation of spin-selective tunneling in sige nanocrystals. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.107.246601","ieee":"G. Katsaros et al., “Observation of spin-selective tunneling in sige nanocrystals,” Physical Review Letters, vol. 107, no. 24. American Physical Society, 2011.","ista":"Katsaros G, Golovach V, Spathis P, Ares N, Stoffel M, Fournel F, Schmidt O, Glazman L, De Franceschi S. 2011. Observation of spin-selective tunneling in sige nanocrystals. Physical Review Letters. 107(24).","short":"G. Katsaros, V. Golovach, P. Spathis, N. Ares, M. Stoffel, F. Fournel, O. Schmidt, L. Glazman, S. De Franceschi, Physical Review Letters 107 (2011).","mla":"Katsaros, Georgios, et al. “Observation of Spin-Selective Tunneling in Sige Nanocrystals.” Physical Review Letters, vol. 107, no. 24, American Physical Society, 2011, doi:10.1103/PhysRevLett.107.246601.","chicago":"Katsaros, Georgios, Vitaly Golovach, Panayotis Spathis, Natalia Ares, Mathieu Stoffel, Frank Fournel, Oliver Schmidt, Leonid Glazman, and Silvano De Franceschi. “Observation of Spin-Selective Tunneling in Sige Nanocrystals.” Physical Review Letters. American Physical Society, 2011. https://doi.org/10.1103/PhysRevLett.107.246601."},"oa":1,"publication":"Physical Review Letters","month":"12","day":"07","volume":107,"date_updated":"2021-01-12T06:53:00Z","date_created":"2018-12-11T11:53:50Z","author":[{"full_name":"Georgios Katsaros","last_name":"Katsaros","first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"},{"first_name":"Vitaly","last_name":"Golovach","full_name":"Golovach, Vitaly N"},{"full_name":"Spathis, Panayotis N","last_name":"Spathis","first_name":"Panayotis"},{"last_name":"Ares","first_name":"Natalia","full_name":"Ares, Natalia"},{"full_name":"Stoffel, Mathieu","last_name":"Stoffel","first_name":"Mathieu"},{"first_name":"Frank","last_name":"Fournel","full_name":"Fournel, Frank"},{"full_name":"Schmidt, Oliver G","first_name":"Oliver","last_name":"Schmidt"},{"full_name":"Glazman, Leonid I","first_name":"Leonid","last_name":"Glazman"},{"full_name":"De Franceschi, Silvano","last_name":"De Franceschi","first_name":"Silvano"}],"publisher":"American Physical Society","intvolume":" 107","status":"public","publication_status":"published","title":"Observation of spin-selective tunneling in sige nanocrystals","year":"2011","_id":"1755","acknowledgement":"The work was supported by the Agence Nationale de la Recherche (through the ACCESS and COHESION projects), U.S. DOE Contract No. DE-FG02-08ER46482 (Yale), and the Nanosciences Foundation at Grenoble, France. G. K. acknowledges support from the Deutsche Forschungsgemeinschaft","extern":1,"publist_id":"5369","issue":"24","abstract":[{"text":"Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.","lang":"eng"}],"type":"journal_article"},{"date_published":"2010-06-01T00:00:00Z","doi":"10.1038/nnano.2010.84","oa":1,"citation":{"chicago":"Katsaros, Georgios, Panayotis Spathis, Mathieu Stoffel, Frank Fournel, Massimo Mongillo, Vincent Bouchiat, François Lefloch, Armando Rastelli, Oliver Schmidt, and Silvano De Franceschi. “Hybrid Superconductor-Semiconductor Devices Made from Self-Assembled SiGe Nanocrystals on Silicon.” Nature Nanotechnology. Nature Publishing Group, 2010. https://doi.org/10.1038/nnano.2010.84.","short":"G. Katsaros, P. Spathis, M. Stoffel, F. Fournel, M. Mongillo, V. Bouchiat, F. Lefloch, A. Rastelli, O. Schmidt, S. De Franceschi, Nature Nanotechnology 5 (2010) 458–464.","mla":"Katsaros, Georgios, et al. “Hybrid Superconductor-Semiconductor Devices Made from Self-Assembled SiGe Nanocrystals on Silicon.” Nature Nanotechnology, vol. 5, no. 6, Nature Publishing Group, 2010, pp. 458–64, doi:10.1038/nnano.2010.84.","apa":"Katsaros, G., Spathis, P., Stoffel, M., Fournel, F., Mongillo, M., Bouchiat, V., … De Franceschi, S. (2010). Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology. Nature Publishing Group. https://doi.org/10.1038/nnano.2010.84","ieee":"G. Katsaros et al., “Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon,” Nature Nanotechnology, vol. 5, no. 6. Nature Publishing Group, pp. 458–464, 2010.","ista":"Katsaros G, Spathis P, Stoffel M, Fournel F, Mongillo M, Bouchiat V, Lefloch F, Rastelli A, Schmidt O, De Franceschi S. 2010. Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology. 5(6), 458–464.","ama":"Katsaros G, Spathis P, Stoffel M, et al. Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology. 2010;5(6):458-464. doi:10.1038/nnano.2010.84"},"main_file_link":[{"open_access":"1","url":"http://arxiv.org/abs/1005.1816"}],"publication":"Nature Nanotechnology","page":"458 - 464","quality_controlled":0,"month":"06","day":"01","author":[{"full_name":"Georgios Katsaros","first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"},{"last_name":"Spathis","first_name":"Panayotis","full_name":"Spathis, Panayotis N"},{"last_name":"Stoffel","first_name":"Mathieu","full_name":"Stoffel, Mathieu"},{"full_name":"Fournel, Frank","last_name":"Fournel","first_name":"Frank"},{"last_name":"Mongillo","first_name":"Massimo","full_name":"Mongillo, Massimo"},{"last_name":"Bouchiat","first_name":"Vincent","full_name":"Bouchiat, Vincent"},{"last_name":"Lefloch","first_name":"François","full_name":"Lefloch, François"},{"full_name":"Rastelli, Armando","first_name":"Armando","last_name":"Rastelli"},{"full_name":"Schmidt, Oliver G","first_name":"Oliver","last_name":"Schmidt"},{"last_name":"De Franceschi","first_name":"Silvano","full_name":"De Franceschi, Silvano"}],"volume":5,"date_created":"2018-12-11T11:53:49Z","date_updated":"2021-01-12T06:52:59Z","acknowledgement":"We also acknowledge support from the Agence Nationale de la Recherche (through the ACCESS and COHESION projects). G.K. acknowledges further support from the Deutsche Forschungsgemeinschaft (grant no. KA 2922/1-1)","_id":"1752","year":"2010","intvolume":" 5","publisher":"Nature Publishing Group","status":"public","publication_status":"published","title":"Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon","issue":"6","publist_id":"5372","abstract":[{"lang":"eng","text":"The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals by a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here, we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductor- semiconductor devices, such as resonant supercurrent transistors, when the quantum dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling with pronounced dependences on gate voltage and magnetic field."}],"extern":1,"type":"journal_article"},{"quality_controlled":0,"page":"3545 - 3550","publication":"Nano Letters","oa":1,"main_file_link":[{"open_access":"1","url":"http://arxiv.org/abs/1005.3637"}],"citation":{"short":"R. Songmuang, G. Katsaros, E. Monroy, P. Spathis, C. Bougerol, M. Mongillo, S. De Franceschi, Nano Letters 10 (2010) 3545–3550.","mla":"Songmuang, Rudeeson, et al. “Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires.” Nano Letters, vol. 10, no. 9, American Chemical Society, 2010, pp. 3545–50, doi:10.1021/nl1017578.","chicago":"Songmuang, Rudeeson, Georgios Katsaros, Eva Monroy, Panayotis Spathis, Catherine Bougerol, Massimo Mongillo, and Silvano De Franceschi. “Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires.” Nano Letters. American Chemical Society, 2010. https://doi.org/10.1021/nl1017578.","ama":"Songmuang R, Katsaros G, Monroy E, et al. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 2010;10(9):3545-3550. doi:10.1021/nl1017578","ieee":"R. Songmuang et al., “Quantum transport in GaN/AlN double-barrier heterostructure nanowires,” Nano Letters, vol. 10, no. 9. American Chemical Society, pp. 3545–3550, 2010.","apa":"Songmuang, R., Katsaros, G., Monroy, E., Spathis, P., Bougerol, C., Mongillo, M., & De Franceschi, S. (2010). Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. American Chemical Society. https://doi.org/10.1021/nl1017578","ista":"Songmuang R, Katsaros G, Monroy E, Spathis P, Bougerol C, Mongillo M, De Franceschi S. 2010. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 10(9), 3545–3550."},"date_published":"2010-09-08T00:00:00Z","doi":"10.1021/nl1017578","day":"08","month":"09","title":"Quantum transport in GaN/AlN double-barrier heterostructure nanowires","publication_status":"published","status":"public","publisher":"American Chemical Society","intvolume":" 10","_id":"1753","acknowledgement":"This research was partly funded by the Agence Nationale de la Recherche through the COHESION project. G.K. acknowledges further support from the Deutsche Forschungsgemeinschaft (Grant KA 2922/1-1)","year":"2010","date_updated":"2021-01-12T06:52:59Z","date_created":"2018-12-11T11:53:49Z","volume":10,"author":[{"last_name":"Songmuang","first_name":"Rudeeson","full_name":"Songmuang, Rudeeson"},{"full_name":"Georgios Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios"},{"full_name":"Monroy, Eva","last_name":"Monroy","first_name":"Eva"},{"last_name":"Spathis","first_name":"Panayotis","full_name":"Spathis, Panayotis N"},{"first_name":"Catherine","last_name":"Bougerol","full_name":"Bougerol, Catherine"},{"last_name":"Mongillo","first_name":"Massimo","full_name":"Mongillo, Massimo"},{"last_name":"De Franceschi","first_name":"Silvano","full_name":"De Franceschi, Silvano"}],"type":"journal_article","extern":1,"abstract":[{"text":"We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of ∼100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN dot in between. In the case of a 6 nm thick dot and 2 nm thick barriers, we observe characteristic signatures of Coulomb-blockaded transport in single quantum dots with discrete energy states. For thinner dots and barriers, Coulomb-blockade effects do not play a significant role while the onset of resonant tunneling via the confined quantum levels is accompanied by a negative differential resistance surviving up to ∼150 K.","lang":"eng"}],"publist_id":"5371","issue":"9"},{"type":"journal_article","abstract":[{"text":"When strained Stranski-Krastanow islands are used as "self-assembled quantum dots," a key goal is to control the island position. Here we show that nanoscale grooves can control the nucleation of epitaxial Ge islands on Si(001), and can drive lateral motion of existing islands onto the grooves, even when the grooves are very narrow and shallow compared to the islands. A position centered on the groove minimizes energy. We use as prototype grooves the trenches which form naturally around islands. During coarsening, the shrinking islands move laterally to sit directly astride that trench. In subsequent growth, we demonstrate that islands nucleate on the "empty trenches" which remain on the surface after complete dissolution of the original islands.","lang":"eng"}],"issue":"9","publist_id":"5373","extern":1,"year":"2008","_id":"1751","status":"public","title":"Positioning of strained islands by interaction with surface nanogrooves","publication_status":"published","publisher":"American Physical Society","intvolume":" 101","author":[{"first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Georgios Katsaros"},{"full_name":"Tersoff, Jerry","first_name":"Jerry","last_name":"Tersoff"},{"full_name":"Stoffel, Mathieu","last_name":"Stoffel","first_name":"Mathieu"},{"full_name":"Rastelli, Armando","first_name":"Armando","last_name":"Rastelli"},{"full_name":"Acosta-Diaz, P","first_name":"P","last_name":"Acosta Diaz"},{"full_name":"Kar, Gouranga S","last_name":"Kar","first_name":"Gouranga"},{"first_name":"Giovanni","last_name":"Costantini","full_name":"Costantini, Giovanni"},{"full_name":"Schmidt, Oliver G","first_name":"Oliver","last_name":"Schmidt"},{"last_name":"Kern","first_name":"Klaus","full_name":"Kern, Klaus"}],"date_updated":"2021-01-12T06:52:58Z","date_created":"2018-12-11T11:53:49Z","volume":101,"day":"29","month":"08","publication":"Physical Review Letters","citation":{"mla":"Katsaros, Georgios, et al. “Positioning of Strained Islands by Interaction with Surface Nanogrooves.” Physical Review Letters, vol. 101, no. 9, American Physical Society, 2008, doi:10.1103/PhysRevLett.101.096103.","short":"G. Katsaros, J. Tersoff, M. Stoffel, A. Rastelli, P. Acosta Diaz, G. Kar, G. Costantini, O. Schmidt, K. Kern, Physical Review Letters 101 (2008).","chicago":"Katsaros, Georgios, Jerry Tersoff, Mathieu Stoffel, Armando Rastelli, P Acosta Diaz, Gouranga Kar, Giovanni Costantini, Oliver Schmidt, and Klaus Kern. “Positioning of Strained Islands by Interaction with Surface Nanogrooves.” Physical Review Letters. American Physical Society, 2008. https://doi.org/10.1103/PhysRevLett.101.096103.","ama":"Katsaros G, Tersoff J, Stoffel M, et al. Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters. 2008;101(9). doi:10.1103/PhysRevLett.101.096103","ista":"Katsaros G, Tersoff J, Stoffel M, Rastelli A, Acosta Diaz P, Kar G, Costantini G, Schmidt O, Kern K. 2008. Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters. 101(9).","ieee":"G. Katsaros et al., “Positioning of strained islands by interaction with surface nanogrooves,” Physical Review Letters, vol. 101, no. 9. American Physical Society, 2008.","apa":"Katsaros, G., Tersoff, J., Stoffel, M., Rastelli, A., Acosta Diaz, P., Kar, G., … Kern, K. (2008). Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.101.096103"},"quality_controlled":0,"doi":"10.1103/PhysRevLett.101.096103","date_published":"2008-08-29T00:00:00Z"},{"author":[{"full_name":"Rastelli, Armando","first_name":"Armando","last_name":"Rastelli"},{"first_name":"Mathieu","last_name":"Stoffel","full_name":"Stoffel, Mathieu"},{"full_name":"Malachias, Ângelo S","first_name":"Ângelo","last_name":"Malachias"},{"last_name":"Merdzhanova","first_name":"Tsvetelina","full_name":"Merdzhanova, Tsvetelina"},{"full_name":"Georgios Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios"},{"full_name":"Kern, Klaus","first_name":"Klaus","last_name":"Kern"},{"last_name":"Metzger","first_name":"Till","full_name":"Metzger, Till H"},{"full_name":"Schmidt, Oliver G","first_name":"Oliver","last_name":"Schmidt"}],"date_created":"2018-12-11T11:53:48Z","date_updated":"2021-01-12T06:52:57Z","volume":8,"acknowledgement":"This work was supported by the BMBF (No. 03N8711) and the EU project D-DotFET (No. 012150)","_id":"1749","year":"2008","title":"Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography","status":"public","publication_status":"published","publisher":"American Chemical Society","intvolume":" 8","abstract":[{"text":"Scanning probe microscopy; Semiconductor quantum dots; Composition gradients; Composition profiles; Nanotomography; Single quantum dots; Strained sige/si; Three-dimensional (3D); Wet-chemical etchings; X-ray scattering measurements; quantum dot; methodology; nanotechnology; optical tomography; scanning probe microscopy; three dimensional imaging; Imaging, Three-Dimensional; Materials Testing; Microscopy, Scanning Probe; Nanotechnology; Quantum Dots; Tomography,","lang":"eng"}],"publist_id":"5374","issue":"5","extern":1,"type":"journal_article","doi":"10.1021/nl080290y","date_published":"2008-05-01T00:00:00Z","publication":"Nano Letters","citation":{"chicago":"Rastelli, Armando, Mathieu Stoffel, Ângelo Malachias, Tsvetelina Merdzhanova, Georgios Katsaros, Klaus Kern, Till Metzger, and Oliver Schmidt. “Three-Dimensional Composition Profiles of Single Quantum Dots Determined by Scanning-Probe-Microscopy-Based Nanotomography.” Nano Letters. American Chemical Society, 2008. https://doi.org/10.1021/nl080290y.","mla":"Rastelli, Armando, et al. “Three-Dimensional Composition Profiles of Single Quantum Dots Determined by Scanning-Probe-Microscopy-Based Nanotomography.” Nano Letters, vol. 8, no. 5, American Chemical Society, 2008, pp. 1404–09, doi:10.1021/nl080290y.","short":"A. Rastelli, M. Stoffel, Â. Malachias, T. Merdzhanova, G. Katsaros, K. Kern, T. Metzger, O. Schmidt, Nano Letters 8 (2008) 1404–1409.","ista":"Rastelli A, Stoffel M, Malachias Â, Merdzhanova T, Katsaros G, Kern K, Metzger T, Schmidt O. 2008. Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters. 8(5), 1404–1409.","apa":"Rastelli, A., Stoffel, M., Malachias, Â., Merdzhanova, T., Katsaros, G., Kern, K., … Schmidt, O. (2008). Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters. American Chemical Society. https://doi.org/10.1021/nl080290y","ieee":"A. Rastelli et al., “Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography,” Nano Letters, vol. 8, no. 5. American Chemical Society, pp. 1404–1409, 2008.","ama":"Rastelli A, Stoffel M, Malachias Â, et al. Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters. 2008;8(5):1404-1409. doi:10.1021/nl080290y"},"quality_controlled":0,"page":"1404 - 1409","month":"05","day":"01"},{"abstract":[{"text":"The authors investigate the composition profile of SiGe islands after capping with Si to form quantum dots, using a two step etching procedure and atomic force microscopy. Initially, the Si capping layers are removed by etching selectively Si over Ge and then the composition of the disclosed islands is addressed by selectively etching Ge over Si. For samples grown at 580 °C the authors show that even when overgrowth leads to a flat Si surface and the islands undergo strong morphological changes, a Ge-rich core region is still preserved in the dot. At high growth and overgrowth temperatures (740 °C), the experiments show that the newly formed base of the buried islands is more Si rich than their top. Furthermore, the authors find that for the growth conditions used, no lateral motion takes place during capping.","lang":"eng"}],"publist_id":"5375","issue":"1","extern":1,"type":"journal_article","author":[{"first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Georgios Katsaros"},{"full_name":"Stoffel, Mathieu","first_name":"Mathieu","last_name":"Stoffel"},{"last_name":"Rastelli","first_name":"Armando","full_name":"Rastelli, Armando"},{"last_name":"Schmidt","first_name":"Oliver","full_name":"Schmidt, Oliver G"},{"full_name":"Kern, Klaus","first_name":"Klaus","last_name":"Kern"},{"last_name":"Tersoff","first_name":"Jerry","full_name":"Tersoff, Jerry"}],"date_created":"2018-12-11T11:53:48Z","date_updated":"2021-01-12T06:52:58Z","volume":91,"_id":"1750","year":"2007","title":"Three-dimensional isocompositional profiles of buried SiGeSi (001) islands","status":"public","publication_status":"published","publisher":"American Institute of Physics","intvolume":" 91","month":"01","day":"01","doi":"10.1063/1.2752730","date_published":"2007-01-01T00:00:00Z","publication":"Applied Physics Letters","citation":{"chicago":"Katsaros, Georgios, Mathieu Stoffel, Armando Rastelli, Oliver Schmidt, Klaus Kern, and Jerry Tersoff. “Three-Dimensional Isocompositional Profiles of Buried SiGeSi (001) Islands.” Applied Physics Letters. American Institute of Physics, 2007. https://doi.org/10.1063/1.2752730.","mla":"Katsaros, Georgios, et al. “Three-Dimensional Isocompositional Profiles of Buried SiGeSi (001) Islands.” Applied Physics Letters, vol. 91, no. 1, American Institute of Physics, 2007, doi:10.1063/1.2752730.","short":"G. Katsaros, M. Stoffel, A. Rastelli, O. Schmidt, K. Kern, J. Tersoff, Applied Physics Letters 91 (2007).","ista":"Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. 2007. Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. 91(1).","ieee":"G. Katsaros, M. Stoffel, A. Rastelli, O. Schmidt, K. Kern, and J. Tersoff, “Three-dimensional isocompositional profiles of buried SiGeSi (001) islands,” Applied Physics Letters, vol. 91, no. 1. American Institute of Physics, 2007.","apa":"Katsaros, G., Stoffel, M., Rastelli, A., Schmidt, O., Kern, K., & Tersoff, J. (2007). Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2752730","ama":"Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. 2007;91(1). doi:10.1063/1.2752730"},"quality_controlled":0},{"date_updated":"2021-01-12T06:52:56Z","date_created":"2018-12-11T11:53:47Z","volume":600,"author":[{"last_name":"Katsaros","first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Georgios Katsaros"},{"full_name":"Rastelli, Armando","last_name":"Rastelli","first_name":"Armando"},{"full_name":"Stoffel, Mathieu","first_name":"Mathieu","last_name":"Stoffel"},{"full_name":"Isella, Giovanni","first_name":"Giovanni","last_name":"Isella"},{"first_name":"Hans","last_name":"Von Känel","full_name":"Von Känel, Hans"},{"full_name":"Bittner, Alexander M","last_name":"Bittner","first_name":"Alexander"},{"first_name":"Jerry","last_name":"Tersoff","full_name":"Tersoff, Jerry"},{"first_name":"Ulrich","last_name":"Denker","full_name":"Denker, Ulrich"},{"full_name":"Schmidt, Oliver G","first_name":"Oliver","last_name":"Schmidt"},{"last_name":"Costantini","first_name":"Giovanni","full_name":"Costantini, Giovanni"},{"full_name":"Kern, Klaus","first_name":"Klaus","last_name":"Kern"}],"title":"Investigating the lateral motion of SiGe islands by selective chemical etching","publication_status":"published","status":"public","intvolume":" 600","publisher":"Elsevier","year":"2006","_id":"1745","extern":1,"abstract":[{"text":"SiGe islands grown by deposition of 10 monolayers of Ge on Si(0 0 1) at 740 °C were investigated by using a combination of selective wet chemical etching and atomic force microscopy. The used etchant, a solution consisting of ammonium hydroxide and hydrogen peroxide, shows a high selectivity of Ge over SixGe1-x and is characterized by relatively slow etching rates for Si-rich alloys. By performing successive etching experiments on the same sample area, we are able to gain a deeper insight into the lateral displacement the islands undergo during post growth annealing.","lang":"eng"}],"publist_id":"5379","issue":"12","type":"journal_article","date_published":"2006-06-15T00:00:00Z","doi":"10.1016/j.susc.2006.04.027","quality_controlled":0,"page":"2608 - 2613","publication":"Surface Science","citation":{"ama":"Katsaros G, Rastelli A, Stoffel M, et al. Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science. 2006;600(12):2608-2613. doi:10.1016/j.susc.2006.04.027","apa":"Katsaros, G., Rastelli, A., Stoffel, M., Isella, G., Von Känel, H., Bittner, A., … Kern, K. (2006). Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science. Elsevier. https://doi.org/10.1016/j.susc.2006.04.027","ieee":"G. Katsaros et al., “Investigating the lateral motion of SiGe islands by selective chemical etching,” Surface Science, vol. 600, no. 12. Elsevier, pp. 2608–2613, 2006.","ista":"Katsaros G, Rastelli A, Stoffel M, Isella G, Von Känel H, Bittner A, Tersoff J, Denker U, Schmidt O, Costantini G, Kern K. 2006. Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science. 600(12), 2608–2613.","short":"G. Katsaros, A. Rastelli, M. Stoffel, G. Isella, H. Von Känel, A. Bittner, J. Tersoff, U. Denker, O. Schmidt, G. Costantini, K. Kern, Surface Science 600 (2006) 2608–2613.","mla":"Katsaros, Georgios, et al. “Investigating the Lateral Motion of SiGe Islands by Selective Chemical Etching.” Surface Science, vol. 600, no. 12, Elsevier, 2006, pp. 2608–13, doi:10.1016/j.susc.2006.04.027.","chicago":"Katsaros, Georgios, Armando Rastelli, Mathieu Stoffel, Giovanni Isella, Hans Von Känel, Alexander Bittner, Jerry Tersoff, et al. “Investigating the Lateral Motion of SiGe Islands by Selective Chemical Etching.” Surface Science. Elsevier, 2006. https://doi.org/10.1016/j.susc.2006.04.027."},"month":"06","day":"15"},{"intvolume":" 37","publisher":"Elsevier","publication_status":"published","status":"public","title":"Reading the footprints of strained islands","_id":"1747","year":"2006","acknowledgement":"This work was supported by the BMBF (03N8711)","volume":37,"date_created":"2018-12-11T11:53:47Z","date_updated":"2021-01-12T06:52:57Z","author":[{"last_name":"Rastelli","first_name":"Armando","full_name":"Rastelli, Armando"},{"full_name":"Stoffel, Mathieu","last_name":"Stoffel","first_name":"Mathieu"},{"last_name":"Katsaros","first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Georgios Katsaros"},{"full_name":"Tersoff, Jerry","first_name":"Jerry","last_name":"Tersoff"},{"first_name":"Ulrich","last_name":"Denker","full_name":"Denker, Ulrich"},{"full_name":"Merdzhanova, Tsvetelina","last_name":"Merdzhanova","first_name":"Tsvetelina"},{"full_name":"Kar, Gouranga S","first_name":"Gouranga","last_name":"Kar"},{"last_name":"Costantini","first_name":"Giovanni","full_name":"Costantini, Giovanni"},{"first_name":"Klaus","last_name":"Kern","full_name":"Kern, Klaus"},{"full_name":"Von Känel, Hans","first_name":"Hans","last_name":"Von Känel"},{"full_name":"Schmidt, Oliver G","first_name":"Oliver","last_name":"Schmidt"}],"type":"journal_article","extern":1,"issue":"12","publist_id":"5377","abstract":[{"text":"We report on recent advances in the understanding of surface processes occurring during growth and post-growth annealing of strained islands which may find application as self-assembled quantum dots. We investigate the model system SiGe/Si(0 0 1) by a new approach based on "reading the footprints" which islands leave on the substrate during their growth and evolution. Such footprints consist of trenches carved in the Si substrate. We distinguish between surface footprints and footprints buried below the islands. The former allow us to discriminate islands which are in the process of growing from those which are shrinking. Islands with steep morphologies grow at the expense of smaller and shallower islands, consistent with the kinetics of anomalous coarsening. While shrinking, islands change their shape according to thermodynamic predictions. Buried footprints are investigated by removing the SiGe epilayer by means of selective wet chemical etching. Their reading shows that: (i) during post-growth annealing islands move laterally because of surface-mediated Si-Ge intermixing; (ii) a tree-ring structure of trenches is created by dislocated islands during their "cyclic" growth. This allows us to distinguish coherent from dislocated islands and to establish whether the latter are the result of island coalescence.","lang":"eng"}],"page":"1471 - 1476","quality_controlled":0,"citation":{"apa":"Rastelli, A., Stoffel, M., Katsaros, G., Tersoff, J., Denker, U., Merdzhanova, T., … Schmidt, O. (2006). Reading the footprints of strained islands. Microelectronics Journal. Elsevier. https://doi.org/10.1016/j.mejo.2006.05.029","ieee":"A. Rastelli et al., “Reading the footprints of strained islands,” Microelectronics Journal, vol. 37, no. 12. Elsevier, pp. 1471–1476, 2006.","ista":"Rastelli A, Stoffel M, Katsaros G, Tersoff J, Denker U, Merdzhanova T, Kar G, Costantini G, Kern K, Von Känel H, Schmidt O. 2006. Reading the footprints of strained islands. Microelectronics Journal. 37(12), 1471–1476.","ama":"Rastelli A, Stoffel M, Katsaros G, et al. Reading the footprints of strained islands. Microelectronics Journal. 2006;37(12):1471-1476. doi:10.1016/j.mejo.2006.05.029","chicago":"Rastelli, Armando, Mathieu Stoffel, Georgios Katsaros, Jerry Tersoff, Ulrich Denker, Tsvetelina Merdzhanova, Gouranga Kar, et al. “Reading the Footprints of Strained Islands.” Microelectronics Journal. Elsevier, 2006. https://doi.org/10.1016/j.mejo.2006.05.029.","short":"A. Rastelli, M. Stoffel, G. Katsaros, J. Tersoff, U. Denker, T. Merdzhanova, G. Kar, G. Costantini, K. Kern, H. Von Känel, O. Schmidt, Microelectronics Journal 37 (2006) 1471–1476.","mla":"Rastelli, Armando, et al. “Reading the Footprints of Strained Islands.” Microelectronics Journal, vol. 37, no. 12, Elsevier, 2006, pp. 1471–76, doi:10.1016/j.mejo.2006.05.029."},"publication":"Microelectronics Journal","doi":"10.1016/j.mejo.2006.05.029","date_published":"2006-12-01T00:00:00Z","day":"01","month":"12"},{"title":"Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots","status":"public","publication_status":"published","intvolume":" 96","publisher":"American Physical Society","year":"2006","_id":"1746","date_updated":"2021-01-12T06:52:56Z","date_created":"2018-12-11T11:53:47Z","volume":96,"author":[{"first_name":"Giovanni","last_name":"Costantini","full_name":"Costantini, Giovanni"},{"first_name":"Armando","last_name":"Rastelli","full_name":"Rastelli, Armando"},{"full_name":"Manzano, Carlos","last_name":"Manzano","first_name":"Carlos"},{"first_name":"P","last_name":"Acosta Diaz","full_name":"Acosta-Diaz, P"},{"last_name":"Songmuang","first_name":"Rudeeson","full_name":"Songmuang, Rudeeson"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios","full_name":"Georgios Katsaros"},{"full_name":"Schmidt, Oliver G","first_name":"Oliver","last_name":"Schmidt"},{"first_name":"Klaus","last_name":"Kern","full_name":"Kern, Klaus"}],"type":"journal_article","extern":1,"abstract":[{"text":"A microscopic picture for the GaAs overgrowth of self-organized InAs/GaAs(001) quantum dots is developed. Scanning tunneling microscopy measurements reveal two capping regimes: the first being characterized by a dot shrinking and a backward pyramid-to-dome shape transition. This regime is governed by fast dynamics resulting in island morphologies close to thermodynamic equilibrium. The second regime is marked by a true overgrowth and is controlled by kinetically limited surface diffusion processes. A simple model is developed to describe the observed structural changes which are rationalized in terms of energetic minimization driven by lattice mismatch and alloying.","lang":"eng"}],"issue":"22","publist_id":"5378","quality_controlled":0,"publication":"Physical Review Letters","citation":{"ama":"Costantini G, Rastelli A, Manzano C, et al. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. 2006;96(22). doi:10.1103/PhysRevLett.96.226106","ieee":"G. Costantini et al., “Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots,” Physical Review Letters, vol. 96, no. 22. American Physical Society, 2006.","apa":"Costantini, G., Rastelli, A., Manzano, C., Acosta Diaz, P., Songmuang, R., Katsaros, G., … Kern, K. (2006). Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.96.226106","ista":"Costantini G, Rastelli A, Manzano C, Acosta Diaz P, Songmuang R, Katsaros G, Schmidt O, Kern K. 2006. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. 96(22).","short":"G. Costantini, A. Rastelli, C. Manzano, P. Acosta Diaz, R. Songmuang, G. Katsaros, O. Schmidt, K. Kern, Physical Review Letters 96 (2006).","mla":"Costantini, Giovanni, et al. “Interplay between Thermodynamics and Kinetics in the Capping of InAs/GaAs (001) Quantum Dots.” Physical Review Letters, vol. 96, no. 22, American Physical Society, 2006, doi:10.1103/PhysRevLett.96.226106.","chicago":"Costantini, Giovanni, Armando Rastelli, Carlos Manzano, P Acosta Diaz, Rudeeson Songmuang, Georgios Katsaros, Oliver Schmidt, and Klaus Kern. “Interplay between Thermodynamics and Kinetics in the Capping of InAs/GaAs (001) Quantum Dots.” Physical Review Letters. American Physical Society, 2006. https://doi.org/10.1103/PhysRevLett.96.226106."},"doi":"10.1103/PhysRevLett.96.226106","date_published":"2006-01-01T00:00:00Z","day":"01","month":"01"},{"doi":"10.1063/1.2405876","date_published":"2006-01-01T00:00:00Z","quality_controlled":0,"publication":"Applied Physics Letters","citation":{"mla":"Katsaros, Georgios, et al. “Evolution of Buried Semiconductor Nanostructures and Origin of Stepped Surface Mounds during Capping.” Applied Physics Letters, vol. 89, no. 25, American Institute of Physics, 2006, doi:10.1063/1.2405876.","short":"G. Katsaros, A. Rastelli, M. Stoffel, G. Costantini, O. Schmidt, K. Kern, J. Tersoff, E. Müller, H. Von Känel, Applied Physics Letters 89 (2006).","chicago":"Katsaros, Georgios, Armando Rastelli, Mathieu Stoffel, Giovanni Costantini, Oliver Schmidt, Klaus Kern, Jerry Tersoff, Elisabeth Müller, and Hans Von Känel. “Evolution of Buried Semiconductor Nanostructures and Origin of Stepped Surface Mounds during Capping.” Applied Physics Letters. American Institute of Physics, 2006. https://doi.org/10.1063/1.2405876.","ama":"Katsaros G, Rastelli A, Stoffel M, et al. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 2006;89(25). doi:10.1063/1.2405876","ista":"Katsaros G, Rastelli A, Stoffel M, Costantini G, Schmidt O, Kern K, Tersoff J, Müller E, Von Känel H. 2006. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 89(25).","ieee":"G. Katsaros et al., “Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping,” Applied Physics Letters, vol. 89, no. 25. American Institute of Physics, 2006.","apa":"Katsaros, G., Rastelli, A., Stoffel, M., Costantini, G., Schmidt, O., Kern, K., … Von Känel, H. (2006). Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2405876"},"month":"01","day":"01","date_updated":"2021-01-12T06:52:57Z","date_created":"2018-12-11T11:53:48Z","volume":89,"author":[{"full_name":"Georgios Katsaros","first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Rastelli, Armando","first_name":"Armando","last_name":"Rastelli"},{"first_name":"Mathieu","last_name":"Stoffel","full_name":"Stoffel, Mathieu"},{"first_name":"Giovanni","last_name":"Costantini","full_name":"Costantini, Giovanni"},{"full_name":"Schmidt, Oliver G","last_name":"Schmidt","first_name":"Oliver"},{"first_name":"Klaus","last_name":"Kern","full_name":"Kern, Klaus"},{"full_name":"Tersoff, Jerry","last_name":"Tersoff","first_name":"Jerry"},{"full_name":"Müller, Elisabeth","first_name":"Elisabeth","last_name":"Müller"},{"full_name":"Von Känel, Hans","first_name":"Hans","last_name":"Von Känel"}],"status":"public","title":"Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping","publication_status":"published","intvolume":" 89","publisher":"American Institute of Physics","year":"2006","_id":"1748","extern":1,"abstract":[{"lang":"eng","text":"The authors apply selective wet chemical etching and atomic force microscopy to reveal the three-dimensional shape of SiGeSi (001) islands after capping with Si. Although the "self-assembled quantum dots" remain practically unaffected by capping in the temperature range of 300-450 °C, significant morphological changes take place on the Si surface. At 450 °C, the morphology of the capping layer (Si matrix) evolves toward an intriguing semifacetted structure, which we call a "ziggurat," giving the misleading impression of a stepped SiGe island shape."}],"issue":"25","publist_id":"5376","type":"journal_article"},{"date_updated":"2021-01-12T06:52:55Z","date_created":"2018-12-11T11:53:46Z","volume":72,"author":[{"full_name":"Georgios Katsaros","first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Costantini, Giovanni","last_name":"Costantini","first_name":"Giovanni"},{"last_name":"Stoffel","first_name":"Mathieu","full_name":"Stoffel, Mathieu"},{"full_name":"Esteban, Rubén","first_name":"Rubén","last_name":"Esteban"},{"first_name":"Alexander","last_name":"Bittner","full_name":"Bittner, Alexander M"},{"last_name":"Rastelli","first_name":"Armando","full_name":"Rastelli, Armando"},{"full_name":"Denker, Ulrich","first_name":"Ulrich","last_name":"Denker"},{"full_name":"Schmidt, Oliver G","last_name":"Schmidt","first_name":"Oliver"},{"full_name":"Kern, Klaus","first_name":"Klaus","last_name":"Kern"}],"title":"Kinetic origin of island intermixing during the growth of Ge on Si (001)","publication_status":"published","status":"public","publisher":"American Physical Society","intvolume":" 72","acknowledgement":"G. K. acknowledges the financial support of DAAD (Deutscher Akademischer Austausch Dienst)","_id":"1742","year":"2005","extern":1,"abstract":[{"text":"The effects of substrate temperature, growth rate, and postgrowth annealing on the composition of Ge islands grown on Si(001) were investigated with a combination of selective wet chemical etching and atomic force microscopy. A simple kinetic model comprising only surface diffusion processes can explain all the experimentally observed compositional profiles for pyramid and dome islands grown in the 560-620°C range. From this model three-dimensional compositional maps were extracted. By performing annealing experiments a change in the composition of the domes was observed. This could be explained as the result of the islands' movement induced by alloying-driven energy minimization. Also in this case kinetically hindered bulk diffusion processes are not needed to explain the experimental observations.","lang":"eng"}],"issue":"19","publist_id":"5382","type":"journal_article","date_published":"2005-11-15T00:00:00Z","doi":"10.1103/PhysRevB.72.195320","quality_controlled":0,"publication":"Physical Review B - Condensed Matter and Materials Physics","citation":{"ista":"Katsaros G, Costantini G, Stoffel M, Esteban R, Bittner A, Rastelli A, Denker U, Schmidt O, Kern K. 2005. Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. 72(19).","ieee":"G. Katsaros et al., “Kinetic origin of island intermixing during the growth of Ge on Si (001),” Physical Review B - Condensed Matter and Materials Physics, vol. 72, no. 19. American Physical Society, 2005.","apa":"Katsaros, G., Costantini, G., Stoffel, M., Esteban, R., Bittner, A., Rastelli, A., … Kern, K. (2005). Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. American Physical Society. https://doi.org/10.1103/PhysRevB.72.195320","ama":"Katsaros G, Costantini G, Stoffel M, et al. Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. 2005;72(19). doi:10.1103/PhysRevB.72.195320","chicago":"Katsaros, Georgios, Giovanni Costantini, Mathieu Stoffel, Rubén Esteban, Alexander Bittner, Armando Rastelli, Ulrich Denker, Oliver Schmidt, and Klaus Kern. “Kinetic Origin of Island Intermixing during the Growth of Ge on Si (001).” Physical Review B - Condensed Matter and Materials Physics. American Physical Society, 2005. https://doi.org/10.1103/PhysRevB.72.195320.","mla":"Katsaros, Georgios, et al. “Kinetic Origin of Island Intermixing during the Growth of Ge on Si (001).” Physical Review B - Condensed Matter and Materials Physics, vol. 72, no. 19, American Physical Society, 2005, doi:10.1103/PhysRevB.72.195320.","short":"G. Katsaros, G. Costantini, M. Stoffel, R. Esteban, A. Bittner, A. Rastelli, U. Denker, O. Schmidt, K. Kern, Physical Review B - Condensed Matter and Materials Physics 72 (2005)."},"day":"15","month":"11"},{"doi":"10.1016/j.jcrysgro.2004.12.047","date_published":"2005-05-01T00:00:00Z","page":"38 - 45","quality_controlled":0,"citation":{"short":"G. Costantini, A. Rastelli, C. Manzano, P. Acosta Diaz, G. Katsaros, R. Songmuang, O. Schmidt, H. Von Känel, K. Kern, Journal of Crystal Growth 278 (2005) 38–45.","mla":"Costantini, Giovanni, et al. “Pyramids and Domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) Systems.” Journal of Crystal Growth, vol. 278, no. 1–4, Elsevier, 2005, pp. 38–45, doi:10.1016/j.jcrysgro.2004.12.047.","chicago":"Costantini, Giovanni, Armando Rastelli, Carlos Manzano, P Acosta Diaz, Georgios Katsaros, Rudeeson Songmuang, Oliver Schmidt, Hans Von Känel, and Klaus Kern. “Pyramids and Domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) Systems.” Journal of Crystal Growth. Elsevier, 2005. https://doi.org/10.1016/j.jcrysgro.2004.12.047.","ama":"Costantini G, Rastelli A, Manzano C, et al. Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 2005;278(1-4):38-45. doi:10.1016/j.jcrysgro.2004.12.047","apa":"Costantini, G., Rastelli, A., Manzano, C., Acosta Diaz, P., Katsaros, G., Songmuang, R., … Kern, K. (2005). Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. Elsevier. https://doi.org/10.1016/j.jcrysgro.2004.12.047","ieee":"G. Costantini et al., “Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems,” Journal of Crystal Growth, vol. 278, no. 1–4. Elsevier, pp. 38–45, 2005.","ista":"Costantini G, Rastelli A, Manzano C, Acosta Diaz P, Katsaros G, Songmuang R, Schmidt O, Von Känel H, Kern K. 2005. Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 278(1–4), 38–45."},"publication":"Journal of Crystal Growth","month":"05","day":"01","volume":278,"date_created":"2018-12-11T11:53:45Z","date_updated":"2021-01-12T06:52:54Z","author":[{"full_name":"Costantini, Giovanni","last_name":"Costantini","first_name":"Giovanni"},{"full_name":"Rastelli, Armando","first_name":"Armando","last_name":"Rastelli"},{"full_name":"Manzano, Carlos","last_name":"Manzano","first_name":"Carlos"},{"full_name":"Acosta-Diaz, P","last_name":"Acosta Diaz","first_name":"P"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios","full_name":"Georgios Katsaros"},{"full_name":"Songmuang, Rudeeson","last_name":"Songmuang","first_name":"Rudeeson"},{"last_name":"Schmidt","first_name":"Oliver","full_name":"Schmidt, Oliver G"},{"full_name":"Von Känel, Hans","first_name":"Hans","last_name":"Von Känel"},{"last_name":"Kern","first_name":"Klaus","full_name":"Kern, Klaus"}],"publisher":"Elsevier","intvolume":" 278","title":"Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems","publication_status":"published","status":"public","year":"2005","_id":"1740","extern":1,"issue":"1-4","publist_id":"5384","abstract":[{"lang":"eng","text":"A systematic study of the morphology of self-organized islands in the InAs/GaAs(0 0 1) and Ge/Si(0 0 1) systems is presented, based on high-resolution scanning tunneling microscopy measurements. We demonstrate that in both cases two main island families coexist: smaller pyramids bound by one type of shallow facets and larger multifaceted domes. Their structure and facet orientation are precisely determined, thus solving a highly debated argument in the case of InAs/GaAs(0 0 1). The comparison between the two material systems reveals the existence of striking similarities that extend even to the nature of island precursors and to the islands that form when depositing InGaAs or GeSi alloys. The implications of these observations on a possible universal description of the Stranski-Krastanow growth mode are discussed with respect to recent theoretical results."}],"type":"journal_article"},{"volume":87,"date_updated":"2021-01-12T06:52:55Z","date_created":"2018-12-11T11:53:46Z","author":[{"full_name":"Zhong, Zheyang","last_name":"Zhong","first_name":"Zheyang"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios","full_name":"Georgios Katsaros"},{"first_name":"Mathieu","last_name":"Stoffel","full_name":"Stoffel, Mathieu"},{"full_name":"Costantini, Giovanni","last_name":"Costantini","first_name":"Giovanni"},{"full_name":"Kern, Klaus","last_name":"Kern","first_name":"Klaus"},{"last_name":"Schmidt","first_name":"Oliver","full_name":"Schmidt, Oliver G"},{"full_name":"Jin-Phillipp, Neng Y","last_name":"Jin Phillipp","first_name":"Neng"},{"first_name":"Günther","last_name":"Bauer","full_name":"Bauer, Günther"}],"intvolume":" 87","publisher":"American Institute of Physics","publication_status":"published","status":"public","title":"Periodic pillar structures by Si etching of multilayer GeSi/Si islands","acknowledgement":"This work was supported by the BMBF (03N8711) and the EU NOE SANDiE","_id":"1743","year":"2005","extern":1,"issue":"26","publist_id":"5381","abstract":[{"text":"Laterally aligned multilayer GeSiSi islands grown on a patterned Si (001) substrate are disclosed by selective etching of Si in a KOH solution. This procedure allows us to visualize the vertical alignment of the islands in a three-dimensional perspective. Our technique reveals that partly coalesced double islands in the initial layer do not merge together, but instead gradually reproduce into well-separated double islands in upper layers. We attribute this effect to very thin spacer layers, which efficiently transfer the strain modulation of each island through the spacer layer to the surface. The etching rate of Si is reduced in tensile strained regions, which helps to preserve sufficient Si between the stacked islands to form a periodic array of freestanding and vertically modulated heterostructure pillars.","lang":"eng"}],"type":"journal_article","date_published":"2005-01-01T00:00:00Z","doi":"10.1063/1.2150278","page":"1 - 3","quality_controlled":0,"citation":{"ista":"Zhong Z, Katsaros G, Stoffel M, Costantini G, Kern K, Schmidt O, Jin Phillipp N, Bauer G. 2005. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. 87(26), 1–3.","apa":"Zhong, Z., Katsaros, G., Stoffel, M., Costantini, G., Kern, K., Schmidt, O., … Bauer, G. (2005). Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2150278","ieee":"Z. Zhong et al., “Periodic pillar structures by Si etching of multilayer GeSi/Si islands,” Applied Physics Letters, vol. 87, no. 26. American Institute of Physics, pp. 1–3, 2005.","ama":"Zhong Z, Katsaros G, Stoffel M, et al. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. 2005;87(26):1-3. doi:10.1063/1.2150278","chicago":"Zhong, Zheyang, Georgios Katsaros, Mathieu Stoffel, Giovanni Costantini, Klaus Kern, Oliver Schmidt, Neng Jin Phillipp, and Günther Bauer. “Periodic Pillar Structures by Si Etching of Multilayer GeSi/Si Islands.” Applied Physics Letters. American Institute of Physics, 2005. https://doi.org/10.1063/1.2150278.","mla":"Zhong, Zheyang, et al. “Periodic Pillar Structures by Si Etching of Multilayer GeSi/Si Islands.” Applied Physics Letters, vol. 87, no. 26, American Institute of Physics, 2005, pp. 1–3, doi:10.1063/1.2150278.","short":"Z. Zhong, G. Katsaros, M. Stoffel, G. Costantini, K. Kern, O. Schmidt, N. Jin Phillipp, G. Bauer, Applied Physics Letters 87 (2005) 1–3."},"publication":"Applied Physics Letters","day":"01","month":"01"},{"date_updated":"2021-01-12T06:52:55Z","date_created":"2018-12-11T11:53:46Z","volume":152,"author":[{"first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Georgios Katsaros"},{"last_name":"Darwazeh","first_name":"Izzat","full_name":"Darwazeh, Izzat Z"},{"first_name":"Phil","last_name":"Lane","full_name":"Lane, Phil M"}],"title":"Non linear transmission effects in duobinary and dicode optical systems","status":"public","publication_status":"published","intvolume":" 152","publisher":"Institute of Electrical Engineers","acknowledgement":"IET","_id":"1744","year":"2005","extern":1,"abstract":[{"lang":"eng","text":"This paper presents optical duobinary and dicode signalling, as alternatives to the binary format, in order to improve the transmission performance in the presense of non-linear effects in a dense wavelength division multiplex (WDM) optical system. Duobinary signalling is applied to an optical system to explore the reduction of stimulated Brillouin scattering (SBS) effects. Duobinary signalling suppresses the SBS effects, and an eye-opening improvement of 0.25 to 1.2 dB is achieved relative to binary transmission over a range of input power levels. An experimental study demonstrates that duobinary modulation suppresses the four wave mixing (FWM) products of a dense WDM system by a maximum of 3 dB. The suppression is maintained over a range of channel spacings. An investigation of the impact of fibre dispersion on FWM products under binary, duobinary and dicode modulation in a dense WDM system is then performed, with interchannel spacing and optical power variation. This leads to the development of a set of guidelines for the application areas, in which it is appropriate to use duobinary or dicode modulation in WDM systems as a means of mitigating the impact of FWM."}],"publist_id":"5380","issue":"6","type":"journal_article","doi":"10.1049/ip-opt:20045067","date_published":"2005-12-01T00:00:00Z","quality_controlled":0,"page":"344 - 352","publication":"IEE Proceedings - Optoelectronics","citation":{"ama":"Katsaros G, Darwazeh I, Lane P. Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. 2005;152(6):344-352. doi:10.1049/ip-opt:20045067","ista":"Katsaros G, Darwazeh I, Lane P. 2005. Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. 152(6), 344–352.","ieee":"G. Katsaros, I. Darwazeh, and P. Lane, “Non linear transmission effects in duobinary and dicode optical systems,” IEE Proceedings - Optoelectronics, vol. 152, no. 6. Institute of Electrical Engineers, pp. 344–352, 2005.","apa":"Katsaros, G., Darwazeh, I., & Lane, P. (2005). Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. Institute of Electrical Engineers. https://doi.org/10.1049/ip-opt:20045067","mla":"Katsaros, Georgios, et al. “Non Linear Transmission Effects in Duobinary and Dicode Optical Systems.” IEE Proceedings - Optoelectronics, vol. 152, no. 6, Institute of Electrical Engineers, 2005, pp. 344–52, doi:10.1049/ip-opt:20045067.","short":"G. Katsaros, I. Darwazeh, P. Lane, IEE Proceedings - Optoelectronics 152 (2005) 344–352.","chicago":"Katsaros, Georgios, Izzat Darwazeh, and Phil Lane. “Non Linear Transmission Effects in Duobinary and Dicode Optical Systems.” IEE Proceedings - Optoelectronics. Institute of Electrical Engineers, 2005. https://doi.org/10.1049/ip-opt:20045067."},"month":"12","day":"01"},{"day":"03","month":"06","quality_controlled":0,"citation":{"chicago":"Denker, Ulrich, Armando Rastelli, Mathieu Stoffel, Jerry Tersoff, Georgios Katsaros, Giovanni Costantini, Klaus Kern, Neng Jin Phillipp, David Jesson, and Oliver Schmidt. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.” Physical Review Letters. American Physical Society, 2005. https://doi.org/10.1103/PhysRevLett.94.216103.","short":"U. Denker, A. Rastelli, M. Stoffel, J. Tersoff, G. Katsaros, G. Costantini, K. Kern, N. Jin Phillipp, D. Jesson, O. Schmidt, Physical Review Letters 94 (2005).","mla":"Denker, Ulrich, et al. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.” Physical Review Letters, vol. 94, no. 21, American Physical Society, 2005, doi:10.1103/PhysRevLett.94.216103.","ieee":"U. Denker et al., “Lateral motion of SiGe islands driven by surface-mediated alloying,” Physical Review Letters, vol. 94, no. 21. American Physical Society, 2005.","apa":"Denker, U., Rastelli, A., Stoffel, M., Tersoff, J., Katsaros, G., Costantini, G., … Schmidt, O. (2005). Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.94.216103","ista":"Denker U, Rastelli A, Stoffel M, Tersoff J, Katsaros G, Costantini G, Kern K, Jin Phillipp N, Jesson D, Schmidt O. 2005. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 94(21).","ama":"Denker U, Rastelli A, Stoffel M, et al. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 2005;94(21). doi:10.1103/PhysRevLett.94.216103"},"publication":"Physical Review Letters","date_published":"2005-06-03T00:00:00Z","doi":"10.1103/PhysRevLett.94.216103","type":"journal_article","extern":1,"issue":"21","publist_id":"5383","abstract":[{"text":"SiGe islands move laterally on a Si(001) substrate during in situ postgrowth annealing. This surprising behavior is revealed by an analysis of the substrate surface morphology after island removal using wet chemical etching. We explain the island motion by asymmetric surface-mediated alloying. Material leaves one side of the island by surface diffusion, and mixes with additional Si from the surrounding surface as it redeposits on the other side. Thus the island moves laterally while becoming larger and more dilute.","lang":"eng"}],"intvolume":" 94","publisher":"American Physical Society","status":"public","title":"Lateral motion of SiGe islands driven by surface-mediated alloying","publication_status":"published","_id":"1741","year":"2005","acknowledgement":"The work was supported by the BMBF (03N8711)","volume":94,"date_created":"2018-12-11T11:53:46Z","date_updated":"2021-01-12T06:52:54Z","author":[{"first_name":"Ulrich","last_name":"Denker","full_name":"Denker, Ulrich"},{"full_name":"Rastelli, Armando","first_name":"Armando","last_name":"Rastelli"},{"full_name":"Stoffel, Mathieu","first_name":"Mathieu","last_name":"Stoffel"},{"first_name":"Jerry","last_name":"Tersoff","full_name":"Tersoff, Jerry"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios","full_name":"Georgios Katsaros"},{"full_name":"Costantini, Giovanni","first_name":"Giovanni","last_name":"Costantini"},{"first_name":"Klaus","last_name":"Kern","full_name":"Kern, Klaus"},{"last_name":"Jin Phillipp","first_name":"Neng","full_name":"Jin-Phillipp, Neng Y"},{"last_name":"Jesson","first_name":"David","full_name":"Jesson, David E"},{"first_name":"Oliver","last_name":"Schmidt","full_name":"Schmidt, Oliver G"}]},{"type":"conference","publist_id":"5385","abstract":[{"lang":"eng","text":"New dyes of the type Ru(II)(bdmpp)(bpy) [where bdmpp is 2,6-bis(3,5-dimethyl-N-pyrazoyl)pyridine and bpy is 2,2′-bipyridine-4,4′-dicarboxylic acid] are prepared and characterized by infra-red (IR), mass (MS) and electrospray mass spectroscopy (ES-MS) as well as 1H NMR (1D and 2D) spectroscopies. The compounds present broad and very high intensity MLCT absorption bands in the visible and can be chemically anchored on TiO2 films via ester-like linkage involving carboxylato groups. These complexes have been tested with success as potential molecular antennas in dye-sensitized solar cells. Both opaque and transparent nanocrystalline TiO2 thin film electrodes obtained by a doctor blade technique sensitized by these complexes were incorporated in a sandwich type regenerative photoelectrochemical solar cell containing 0.1M LiI +0.01M I2 in propylene carbonate as well as a platinized conductive glass counter electrode. The cell was characterized by Raman spectroscopy under anodic and cathodic bias. Two new vibration bands were observed in the lower frequency region. The first one at 112 cm-1 is due to tri-iodide formed on the photoactive electrode, and the second one at 167 cm-1 is a sign of the dye/iodide interaction and corresponds to a vibration in a chemically stable "DI" intermediate species. Under direct sunlight illumination (solar irradiance of 60 mW/cm2) by using a composite polymer solid state electrolyte, the cell ITO/TiO2/[Ru(II)(bdmpp)(bpy)(NCS)](PF6)/electrolyte/Pt-ITO produced a continuous photocurrent as high as 4.29mA/cm2, and gave IPCE values about half of the corresponding values obtained by the standard N3 dye under the same conditions. The photovoltage is about 600 mV and the overall energy conversion cell's efficiency is as high as 1.72%."}],"extern":1,"_id":"1738","year":"2002","intvolume":" 4801","publisher":"SPIE","status":"public","title":"Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes","publication_status":"published","author":[{"full_name":"Falaras, Polycarpos","first_name":"Polycarpos","last_name":"Falaras"},{"first_name":"Katerina","last_name":"Chryssou","full_name":"Chryssou, Katerina"},{"full_name":"Stergiopoulos, Thomas","last_name":"Stergiopoulos","first_name":"Thomas"},{"last_name":"Arabatzis","first_name":"Ioannis","full_name":"Arabatzis, Ioannis M"},{"full_name":"Georgios Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios"},{"first_name":"Vincent","last_name":"Catalano","full_name":"Catalano, Vincent J"},{"first_name":"Raif","last_name":"Kurtaran","full_name":"Kurtaran, Raif"},{"full_name":"Hugot-Le Goff, Anne","first_name":"Anne","last_name":"Hugot Le Goff"},{"last_name":"Bernard","first_name":"Marie","full_name":"Bernard, Marie C"}],"volume":4801,"date_updated":"2021-01-12T06:52:53Z","date_created":"2018-12-11T11:53:45Z","month":"01","day":"01","citation":{"mla":"Falaras, Polycarpos, et al. Dye-Sensitization of Titanium Dioxide Thin Films by Ru(II)-Bpp-Bpy Complexes. Vol. 4801, SPIE, 2002, pp. 125–35, doi:10.1117/12.452446.","short":"P. Falaras, K. Chryssou, T. Stergiopoulos, I. Arabatzis, G. Katsaros, V. Catalano, R. Kurtaran, A. Hugot Le Goff, M. Bernard, in:, SPIE, 2002, pp. 125–135.","chicago":"Falaras, Polycarpos, Katerina Chryssou, Thomas Stergiopoulos, Ioannis Arabatzis, Georgios Katsaros, Vincent Catalano, Raif Kurtaran, Anne Hugot Le Goff, and Marie Bernard. “Dye-Sensitization of Titanium Dioxide Thin Films by Ru(II)-Bpp-Bpy Complexes,” 4801:125–35. SPIE, 2002. https://doi.org/10.1117/12.452446.","ama":"Falaras P, Chryssou K, Stergiopoulos T, et al. Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes. In: Vol 4801. SPIE; 2002:125-135. doi:10.1117/12.452446","ista":"Falaras P, Chryssou K, Stergiopoulos T, Arabatzis I, Katsaros G, Catalano V, Kurtaran R, Hugot Le Goff A, Bernard M. 2002. Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes. Organic Photovoltaics vol. 4801, 125–135.","ieee":"P. Falaras et al., “Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes,” presented at the Organic Photovoltaics, 2002, vol. 4801, pp. 125–135.","apa":"Falaras, P., Chryssou, K., Stergiopoulos, T., Arabatzis, I., Katsaros, G., Catalano, V., … Bernard, M. (2002). Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes (Vol. 4801, pp. 125–135). Presented at the Organic Photovoltaics, SPIE. https://doi.org/10.1117/12.452446"},"page":"125 - 135","quality_controlled":0,"date_published":"2002-01-01T00:00:00Z","doi":"10.1117/12.452446","conference":{"name":"Organic Photovoltaics"}},{"month":"11","day":"01","date_published":"2002-11-01T00:00:00Z","doi":"10.1021/nl025798u","publication":"Nano Letters","citation":{"ista":"Stergiopoulos T, Arabatzis I, Katsaros G, Falaras P. 2002. Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells. Nano Letters. 2(11), 1259–1261.","ieee":"T. Stergiopoulos, I. Arabatzis, G. Katsaros, and P. Falaras, “Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells,” Nano Letters, vol. 2, no. 11. American Chemical Society, pp. 1259–1261, 2002.","apa":"Stergiopoulos, T., Arabatzis, I., Katsaros, G., & Falaras, P. (2002). Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells. Nano Letters. American Chemical Society. https://doi.org/10.1021/nl025798u","ama":"Stergiopoulos T, Arabatzis I, Katsaros G, Falaras P. Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells. Nano Letters. 2002;2(11):1259-1261. doi:10.1021/nl025798u","chicago":"Stergiopoulos, Thomas, Iannis Arabatzis, Georgios Katsaros, and Polycarpos Falaras. “Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells.” Nano Letters. American Chemical Society, 2002. https://doi.org/10.1021/nl025798u.","mla":"Stergiopoulos, Thomas, et al. “Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells.” Nano Letters, vol. 2, no. 11, American Chemical Society, 2002, pp. 1259–61, doi:10.1021/nl025798u.","short":"T. Stergiopoulos, I. Arabatzis, G. Katsaros, P. Falaras, Nano Letters 2 (2002) 1259–1261."},"quality_controlled":0,"page":"1259 - 1261","abstract":[{"text":"Poly(ethylene oxide)/titania polymer electrolyte based photoelectrochemical cells have been fabricated with Ru(dcbpy)2(NCS)2 complex as the sensitizer and nanoporous TiO2 films as photoanodes. The introduction of the titania filler into the poly(ethylene oxide) matrix reduces the crystallinity of the polymer and enhances the mobility of the 1-/13 - redox couple, resulting in outstanding overall conversion efficiency (4.2% under direct sunlight illumination) of the corresponding dye-sensitized nanocrystalline TiO2 solar cell, one of the best efficiencies reported to date for a solid-state device.","lang":"eng"}],"issue":"11","publist_id":"5386","extern":1,"type":"journal_article","author":[{"last_name":"Stergiopoulos","first_name":"Thomas","full_name":"Stergiopoulos, Thomas"},{"first_name":"Iannis","last_name":"Arabatzis","full_name":"Arabatzis, Iannis M"},{"full_name":"Georgios Katsaros","first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"},{"first_name":"Polycarpos","last_name":"Falaras","full_name":"Falaras, Polycarpos"}],"date_created":"2018-12-11T11:53:45Z","date_updated":"2021-01-12T06:52:53Z","volume":2,"year":"2002","_id":"1739","acknowledgement":"Financial support from NCSR “Demokritos” and GSRT-Greece is greatly acknowledged. ","publication_status":"published","status":"public","title":"Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells","intvolume":" 2","publisher":"American Chemical Society"},{"publist_id":"5387","issue":"1-3","abstract":[{"text":"A new solvent-free composite polymer electrolyte consisting of high-molecular mass polyethylene oxide (PEO) filled with titanium oxide and containing LiI and I2 was developed. The introduction of the inorganic filler (TiO2 Degussa P25) into the polymer matrix produces dramatic morphological changes to the host polymer structure. Upon addition of the inorganic oxide, the surface roughness increases, with respect to the original polymer and in parallel, the fractal dimension decreases. Both the thermograms and the atomic force microscope (AFM) pictures confirm the amorphicity of the composite electrolyte. The polymer sub-units are held together in a parallel orientation, forming straight long chains of about 500 nm in width, along which TiO2 spherical particles of about 20-25 nm in diameter are distributed. The polymer chains separated by the titania particles are arranged in a three-dimensional, mechanically stable network, that creates free space and voids into which the iodide/triodide anions can easily migrate. All solid-state dye-sensitized solar cells fabricated using this composite electrolyte present high efficiencies (typical maximum incident photon to current efficiency (IPCE) as high as 40% at 520 nm and overall conversion efficiency (η) of 0.96% (Voc = 0.67 V, Jsc = 2.050 mA/cm2, FF = 39%) under direct solar irradiation. Further improvement of the photovoltaic performance is expected by optimization of the electrolyte parameters and of the cell assembly.","lang":"eng"}],"extern":"1","type":"journal_article","author":[{"full_name":"Katsaros, Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","first_name":"Georgios","last_name":"Katsaros"},{"full_name":"Stergiopoulos, Thomas","first_name":"Thomas","last_name":"Stergiopoulos"},{"full_name":"Arabatzis, Iannis","last_name":"Arabatzis","first_name":"Iannis"},{"full_name":"Papadokostaki, Kyriaki","first_name":"Kyriaki","last_name":"Papadokostaki"},{"first_name":"Polycarpos","last_name":"Falaras","full_name":"Falaras, Polycarpos"}],"oa_version":"None","volume":149,"date_created":"2018-12-11T11:53:44Z","date_updated":"2023-07-26T08:56:55Z","user_id":"ea97e931-d5af-11eb-85d4-e6957dddbf17","_id":"1737","year":"2002","acknowledgement":"Financial support from NCSR “Demokritos” (Dimoerevna 598 project), Empeirikeion Foundation and General Secretariat for Research and Technology of Greece (EPET II, Greece–France and Greece–Czech Republic bilateral collaboration projects) is also greatly acknowledged. G. Katsaros thanks the Greek State Scholarships Foundation (IKY) for fellowship allowance","publisher":"Elsevier","intvolume":" 149","title":"A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells","publication_status":"published","status":"public","article_processing_charge":"No","publication_identifier":{"issn":["1010-6030"]},"month":"06","day":"28","doi":"10.1016/S1010-6030(02)00027-8","date_published":"2002-06-28T00:00:00Z","language":[{"iso":"eng"}],"citation":{"chicago":"Katsaros, Georgios, Thomas Stergiopoulos, Iannis Arabatzis, Kyriaki Papadokostaki, and Polycarpos Falaras. “A Solvent-Free Composite Polymer/Inorganic Oxide Electrolyte for High Efficiency Solid-State Dye-Sensitized Solar Cells.” Journal of Photochemistry and Photobiology A: Chemistry. Elsevier, 2002. https://doi.org/10.1016/S1010-6030(02)00027-8.","mla":"Katsaros, Georgios, et al. “A Solvent-Free Composite Polymer/Inorganic Oxide Electrolyte for High Efficiency Solid-State Dye-Sensitized Solar Cells.” Journal of Photochemistry and Photobiology A: Chemistry, vol. 149, no. 1–3, Elsevier, 2002, pp. 191–98, doi:10.1016/S1010-6030(02)00027-8.","short":"G. Katsaros, T. Stergiopoulos, I. Arabatzis, K. Papadokostaki, P. Falaras, Journal of Photochemistry and Photobiology A: Chemistry 149 (2002) 191–198.","ista":"Katsaros G, Stergiopoulos T, Arabatzis I, Papadokostaki K, Falaras P. 2002. A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells. Journal of Photochemistry and Photobiology A: Chemistry. 149(1–3), 191–198.","ieee":"G. Katsaros, T. Stergiopoulos, I. Arabatzis, K. Papadokostaki, and P. Falaras, “A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells,” Journal of Photochemistry and Photobiology A: Chemistry, vol. 149, no. 1–3. Elsevier, pp. 191–198, 2002.","apa":"Katsaros, G., Stergiopoulos, T., Arabatzis, I., Papadokostaki, K., & Falaras, P. (2002). A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells. Journal of Photochemistry and Photobiology A: Chemistry. Elsevier. https://doi.org/10.1016/S1010-6030(02)00027-8","ama":"Katsaros G, Stergiopoulos T, Arabatzis I, Papadokostaki K, Falaras P. A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells. Journal of Photochemistry and Photobiology A: Chemistry. 2002;149(1-3):191-198. doi:10.1016/S1010-6030(02)00027-8"},"publication":"Journal of Photochemistry and Photobiology A: Chemistry","page":"191 - 198"},{"scopus_import":"1","article_processing_charge":"No","day":"01","page":"27 - 28","citation":{"mla":"Katsaros, Georgios, et al. “Comparison of the Impact of FWM on Binary, Duobinary and Dicode Modulation in DWDM Systems.” Proceedings of the 2000 IEEE Annual Meeting Conference , vol. 1, IEEE, 2000, pp. 27–28, doi:10.1109/LEOS.2000.890656.","short":"G. Katsaros, P. Lane, M. Murphy, in:, Proceedings of the 2000 IEEE Annual Meeting Conference , IEEE, 2000, pp. 27–28.","chicago":"Katsaros, Georgios, Phil Lane, and Michelle Murphy. “Comparison of the Impact of FWM on Binary, Duobinary and Dicode Modulation in DWDM Systems.” In Proceedings of the 2000 IEEE Annual Meeting Conference , 1:27–28. IEEE, 2000. https://doi.org/10.1109/LEOS.2000.890656.","ama":"Katsaros G, Lane P, Murphy M. Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems. In: Proceedings of the 2000 IEEE Annual Meeting Conference . Vol 1. IEEE; 2000:27-28. doi:10.1109/LEOS.2000.890656","ista":"Katsaros G, Lane P, Murphy M. 2000. Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems. Proceedings of the 2000 IEEE Annual Meeting Conference . Lasers and Electro Optics Society Annual Meeting, LEOS, vol. 1, 27–28.","ieee":"G. Katsaros, P. Lane, and M. Murphy, “Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems,” in Proceedings of the 2000 IEEE Annual Meeting Conference , Rio Grande, PR, USA, 2000, vol. 1, pp. 27–28.","apa":"Katsaros, G., Lane, P., & Murphy, M. (2000). Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems. In Proceedings of the 2000 IEEE Annual Meeting Conference (Vol. 1, pp. 27–28). Rio Grande, PR, USA: IEEE. https://doi.org/10.1109/LEOS.2000.890656"},"publication":"Proceedings of the 2000 IEEE Annual Meeting Conference ","date_published":"2000-01-01T00:00:00Z","alternative_title":["LEOS"],"type":"conference","abstract":[{"text":"A coding scheme called diode is compared with duobinary signalling and with normal binary transmission. It is shown that the diode coding suppresses the FWM products of a three channel DWDM system and this reduction against that achieved with duobinary coding is presented. The results presented show how the average level of the FWM products relative to the average levels of the three optical carriers vary over the channel spacing range. The suppression observed is about / dB more than that achieved with duobinary modulation and is greater for narrow channel spacing.","lang":"eng"}],"intvolume":" 1","status":"public","title":"Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems","_id":"1736","user_id":"ea97e931-d5af-11eb-85d4-e6957dddbf17","oa_version":"None","publication_identifier":{"isbn":["078035947X"]},"month":"01","quality_controlled":"1","language":[{"iso":"eng"}],"doi":"10.1109/LEOS.2000.890656","conference":{"location":"Rio Grande, PR, USA","start_date":"2000-11-13","end_date":"2000-11-16","name":"Lasers and Electro Optics Society Annual Meeting"},"extern":"1","publist_id":"5388","publisher":"IEEE","publication_status":"published","year":"2000","volume":1,"date_updated":"2023-05-04T14:46:21Z","date_created":"2018-12-11T11:53:44Z","author":[{"last_name":"Katsaros","first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Katsaros, Georgios"},{"full_name":"Lane, Phil","last_name":"Lane","first_name":"Phil"},{"last_name":"Murphy","first_name":"Michelle","full_name":"Murphy, Michelle"}]}]