@article{20706, abstract = {We experimentally realize a quantum clock by using a charge sensor to count charges tunneling through a double quantum dot (DQD). Individual tunneling events are used as the clock’s ticks. We quantify the clock’s precision while measuring the power dissipated by the DQD and, separately, the charge sensor in both direct-current and radio-frequency readout modes. This allows us to probe the thermodynamic cost of creating ticks microscopically and recording them macroscopically. Our experiment is the first to explore the interplay between the entropy produced by a microscopic clockwork and its macroscopic measurement apparatus. We show that the latter contribution not only dwarfs the former but also unlocks greatly increased precision, because the measurement record can be exploited to optimally estimate time even when the DQD is at equilibrium. Our results suggest that the entropy produced by the amplification and measurement of a clock’s ticks, which has often been ignored in the literature, is the most important and fundamental thermodynamic cost of timekeeping at the quantum scale.}, author = {Wadhia, Vivek and Meier, Florian and Fedele, Federico and Silva, Ralph and Nurgalieva, Nuriya and Craig, David L. and Jirovec, Daniel and Saez Mollejo, Jaime and Ballabio, Andrea and Chrastina, Daniel and Isella, Giovanni and Huber, Marcus and Mitchison, Mark T. and Erker, Paul and Ares, Natalia}, issn = {1079-7114}, journal = {Physical Review Letters}, number = {20}, publisher = {American Physical Society}, title = {{Entropic costs of extracting classical ticks from a quantum clock}}, doi = {10.1103/5rtj-djfk}, volume = {135}, year = {2025}, } @article{20730, abstract = {Radio-frequency measurements could satisfy DiVincenzo’s readout criterion in future large-scale solid-state quantum processors, as they allow for high bandwidths and frequency multiplexing. However, the scalability potential of this readout technique can only be leveraged if quantum device tuning is performed using exclusively radio-frequency measurements, that is, without resorting to current measurements. We demonstrate an algorithm that performs automatic coarse tuning of double quantum dots with only radio-frequency measurements by exploiting their bandwidth and impedance matching. The tuning was completed within a few minutes with minimal prior knowledge about the device. Our results show that it is possible to eliminate the need for transport measurements for quantum-dot tuning, paving the way for more scalable device architectures.}, author = {Van Straaten, Barnaby and Fedele, Federico and Vigneau, Florian and Hickie, Joseph and Jirovec, Daniel and Ballabio, Andrea and Chrastina, Daniel and Isella, Giovanni and Katsaros, Georgios and Ares, Natalia}, issn = {2331-7019}, journal = {Physical Review Applied}, number = {5}, publisher = {American Physical Society}, title = {{All-rf-based coarse-tuning algorithm for quantum devices using machine learning}}, doi = {10.1103/v11m-dbhm}, volume = {24}, year = {2025}, } @article{20733, abstract = {The conversion of thermal energy into work is usually more efficient in the slow-driving regime, where the power output is vanishingly small. Efficient work extraction for fast-driving protocols remains an outstanding challenge at the nanoscale, where fluctuations play a significant role. In this Letter, we use a quantum-dot Szilard engine to extract work from thermal fluctuations with maximum efficiency over two decades of driving speed. We design and implement a family of optimized protocols ranging from the slow- to the fast-driving regime, and we measure the engine's efficiency as well as the mean and variance of its power output in each case. These optimized protocols exhibit significant improvements in power and efficiency compared to the naive approach. Our results also show that, when optimizing for efficiency, boosting the power output of a Szilard engine inevitably comes at the cost of increased power fluctuations.}, author = {Aggarwal, Kushagra and Rolandi, Alberto and Yang, Yikai and Hickie, Joseph and Jirovec, Daniel and Ballabio, Andrea and Chrastina, Daniel and Isella, Giovanni and Mitchison, Mark T. and Perarnau-Llobet, Martí and Ares, Natalia}, issn = {2643-1564}, journal = {Physical Review Research}, number = {3}, publisher = {American Physical Society}, title = {{Rapid optimal work extraction from a quantum-dot information engine}}, doi = {10.1103/q3dx-kyqj}, volume = {7}, year = {2025}, } @misc{20750, author = {Van Straaten, Barnaby and Fedele, Federico and Vigneau, Florian and Hickie, Joseph and Jirovec, Daniel and Chrastina, Daniel and Isella, Giovanni and Ares, Natalia}, publisher = {Zenodo}, title = {{All rf-based tuning algorithm for quantum devices using machine learning}}, doi = {10.5281/ZENODO.17352653}, year = {2025}, } @article{19424, abstract = {Hole spin qubits are rapidly emerging as the workhorse of semiconducting quantum processors because of their large spin-orbit interaction, enabling fast all-electric operations at low power. However, spin-orbit interaction also causes non-uniformities in devices, resulting in locally varying qubit energies and site-dependent anisotropies. While these anisotropies can be used to drive single-spins, if not properly harnessed, they can hinder the path toward large-scale quantum processors. Here, we report on microwave-driven singlet-triplet qubits in planar germanium and use them to investigate the anisotropy of two spins in a double quantum dot. We show two distinct operating regimes depending on the magnetic field direction. For in-plane fields, the two spins are largely anisotropic, and electrically tunable, which enables to measure all the available transitions; coherence times exceeding 3 $\mu$s are extracted. For out-of-plane fields, they have an isotropic response but preserve the substantial energy difference required to address the singlet-triplet qubit. Even in this field direction, where the qubit lifetime is strongly affected by nuclear spins, we find 400 ns coherence times. Our work adds a valuable tool to investigate and harness the anisotropy of spin qubits and can be implemented in any large-scale NxN device, facilitating the path towards scalable quantum processors.}, author = {Saez Mollejo, Jaime and Jirovec, Daniel and Schell, Yona A and Kukucka, Josip and Calcaterra, Stefano and Chrastina, Daniel and Isella, Giovanni and Rimbach-Russ, Maximilian and Bosco, Stefano and Katsaros, Georgios}, issn = {2041-1723}, journal = {Nature Communications}, publisher = {Springer Nature}, title = {{Exchange anisotropies in microwave-driven singlet-triplet qubits}}, doi = {10.1038/s41467-025-58969-y}, volume = {16}, year = {2025}, } @article{18653, abstract = {Charge sensing is a sensitive technique for probing quantum devices, of particular importance for spin-qubit readout. To achieve good readout sensitivities, the proximity of the charge sensor to the device to be measured is a necessity. However, this proximity also means that the operation of the device affects, in turn, the sensor tuning and ultimately the readout sensitivity. We present an approach for compensating for this crosstalk effect allowing for the gate voltages of the measured device to be swept in a 1-V × 1-V window while maintaining a sensor configuration chosen by a Bayesian optimizer. Our algorithm will hopefully be a major contribution to the suite of fully automated solutions required for the operation of large quantum device architectures.}, author = {Hickie, Joseph and Van Straaten, Barnaby and Fedele, Federico and Jirovec, Daniel and Ballabio, Andrea and Chrastina, Daniel and Isella, Giovanni and Katsaros, Georgios and Ares, Natalia}, issn = {2331-7019}, journal = {Physical Review Applied}, number = {6}, publisher = {American Physical Society}, title = {{Automated long-range compensation of an rf quantum dot sensor}}, doi = {10.1103/PhysRevApplied.22.064026}, volume = {22}, year = {2024}, } @article{17389, abstract = {The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions and each device realisation requires a different tuning protocol. We demonstrate that it is possible to automate the tuning of a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate Ge/SiGe heterostructure double quantum dot device from scratch with the same algorithm. We achieve tuning times of 30, 10, and 92 min, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices, allowing for the characterization of the regions where double quantum dot regimes are found. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.}, author = {Severin, B. and Lennon, D. T. and Camenzind, L. C. and Vigneau, F. and Fedele, F. and Jirovec, Daniel and Ballabio, A. and Chrastina, D. and Isella, G. and de Kruijf, M. and Carballido, M. J. and Svab, S. and Kuhlmann, A. V. and Geyer, S. and Froning, F. N. M. and Moon, H. and Osborne, M. A. and Sejdinovic, D. and Katsaros, Georgios and Zumbühl, D. M. and Briggs, G. A. D. and Ares, N.}, issn = {2045-2322}, journal = {Scientific Reports}, publisher = {Springer Nature}, title = {{Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning}}, doi = {10.1038/s41598-024-67787-z}, volume = {14}, year = {2024}, } @misc{18291, author = {Katsaros, Georgios and Jirovec, Daniel}, publisher = {Institute of Science and Technology Austria}, title = {{Dynamics of Hole Singlet-Triplet Qubits with Large 𝑔-Factor Differences}}, doi = {10.15479/AT:ISTA:18291}, year = {2022}, } @article{10920, abstract = {The spin-orbit interaction permits to control the state of a spin qubit via electric fields. For holes it is particularly strong, allowing for fast all electrical qubit manipulation, and yet an in-depth understanding of this interaction in hole systems is missing. Here we investigate, experimentally and theoretically, the effect of the cubic Rashba spin-orbit interaction on the mixing of the spin states by studying singlet-triplet oscillations in a planar Ge hole double quantum dot. Landau-Zener sweeps at different magnetic field directions allow us to disentangle the effects of the spin-orbit induced spin-flip term from those caused by strongly site-dependent and anisotropic quantum dot g tensors. Our work, therefore, provides new insights into the hole spin-orbit interaction, necessary for optimizing future qubit experiments.}, author = {Jirovec, Daniel and Mutter, Philipp M. and Hofmann, Andrea C and Crippa, Alessandro and Rychetsky, Marek and Craig, David L. and Kukucka, Josip and Martins, Frederico and Ballabio, Andrea and Ares, Natalia and Chrastina, Daniel and Isella, Giovanni and Burkard, Guido and Katsaros, Georgios}, issn = {1079-7114}, journal = {Physical Review Letters}, number = {12}, publisher = {American Physical Society}, title = {{Dynamics of hole singlet-triplet qubits with large g-factor differences}}, doi = {10.1103/PhysRevLett.128.126803}, volume = {128}, year = {2022}, } @article{10559, abstract = {Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip.}, author = {Aggarwal, Kushagra and Hofmann, Andrea C and Jirovec, Daniel and Prieto Gonzalez, Ivan and Sammak, Amir and Botifoll, Marc and Martí-Sánchez, Sara and Veldhorst, Menno and Arbiol, Jordi and Scappucci, Giordano and Danon, Jeroen and Katsaros, Georgios}, issn = {2643-1564}, journal = {Physical Review Research}, keywords = {general engineering}, number = {2}, publisher = {American Physical Society}, title = {{Enhancement of proximity-induced superconductivity in a planar Ge hole gas}}, doi = {10.1103/physrevresearch.3.l022005}, volume = {3}, year = {2021}, } @misc{9323, abstract = {This .zip File contains the data for figures presented in the main text and supplementary material of "A singlet triplet hole spin qubit in planar Ge" by D. Jirovec, et. al. The measurements were done using Labber Software and the data is stored in the hdf5 file format. The files can be opened using either the Labber Log Browser (https://labber.org/overview/) or Labber Python API (http://labber.org/online-doc/api/LogFile.html). A single file is acquired with QCodes and features the corresponding data type. XRD data are in .dat format and a code to open the data is provided. The code for simulations is as well provided in Python.}, author = {Jirovec, Daniel}, publisher = {Institute of Science and Technology Austria}, title = {{Research data for "A singlet-triplet hole spin qubit planar Ge"}}, doi = {10.15479/AT:ISTA:9323}, year = {2021}, } @article{8909, abstract = {Spin qubits are considered to be among the most promising candidates for building a quantum processor. Group IV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled X and Z-rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1μs which we extend beyond 15μs with echo techniques. These results show that Ge hole singlet triplet qubits outperform their electronic Si and GaAs based counterparts in speed and coherence, respectively. In addition, they are on par with Ge single spin qubits, but can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies.}, author = {Jirovec, Daniel and Hofmann, Andrea C and Ballabio, Andrea and Mutter, Philipp M. and Tavani, Giulio and Botifoll, Marc and Crippa, Alessandro and Kukucka, Josip and Sagi, Oliver and Martins, Frederico and Saez Mollejo, Jaime and Prieto Gonzalez, Ivan and Borovkov, Maksim and Arbiol, Jordi and Chrastina, Daniel and Isella, Giovanni and Katsaros, Georgios}, issn = {1476-4660}, journal = {Nature Materials}, number = {8}, pages = {1106–1112}, publisher = {Springer Nature}, title = {{A singlet triplet hole spin qubit in planar Ge}}, doi = {10.1038/s41563-021-01022-2}, volume = {20}, year = {2021}, } @phdthesis{10058, abstract = {Quantum information and computation has become a vast field paved with opportunities for researchers and investors. As large multinational companies and international funds are heavily investing in quantum technologies it is still a question which platform is best suited for the task of realizing a scalable quantum processor. In this work we investigate hole spins in Ge quantum wells. These hold great promise as they possess several favorable properties: a small effective mass, a strong spin-orbit coupling, long relaxation time and an inherent immunity to hyperfine noise. All these characteristics helped Ge hole spin qubits to evolve from a single qubit to a fully entangled four qubit processor in only 3 years. Here, we investigated a qubit approach leveraging the large out-of-plane g-factors of heavy hole states in Ge quantum dots. We found this qubit to be reproducibly operable at extremely low magnetic field and at large speeds while maintaining coherence. This was possible because large differences of g-factors in adjacent dots can be achieved in the out-of-plane direction. In the in-plane direction the small g-factors, on the other hand, can be altered very effectively by the confinement potentials. Here, we found that this can even lead to a sign change of the g-factors. The resulting g-factor difference alters the dynamics of the system drastically and produces effects typically attributed to a spin-orbit induced spin-flip term. The investigations carried out in this thesis give further insights into the possibilities of holes in Ge and reveal new physical properties that need to be considered when designing future spin qubit experiments.}, author = {Jirovec, Daniel}, issn = {2663-337X}, keywords = {qubits, quantum computing, holes}, pages = {151}, publisher = {Institute of Science and Technology Austria}, title = {{Singlet-Triplet qubits and spin-orbit interaction in 2-dimensional Ge hole gases}}, doi = {10.15479/at:ista:10058}, year = {2021}, } @unpublished{10066, abstract = {The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.}, author = {Severin, B. and Lennon, D. T. and Camenzind, L. C. and Vigneau, F. and Fedele, F. and Jirovec, Daniel and Ballabio, A. and Chrastina, D. and Isella, G. and Kruijf, M. de and Carballido, M. J. and Svab, S. and Kuhlmann, A. V. and Braakman, F. R. and Geyer, S. and Froning, F. N. M. and Moon, H. and Osborne, M. A. and Sejdinovic, D. and Katsaros, Georgios and Zumbühl, D. M. and Briggs, G. A. D. and Ares, N.}, booktitle = {arXiv}, title = {{Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning}}, doi = {10.48550/arXiv.2107.12975}, year = {2021}, } @unpublished{8831, abstract = {Holes in planar Ge have high mobilities, strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising candidate for hybrid superconductorsemiconductor devices. This is further motivated by the observation of supercurrent transport in planar Ge Josephson Field effect transistors (JoFETs). A key challenge towards hybrid germanium quantum technology is the design of high quality interfaces and superconducting contacts that are robust against magnetic fields. By combining the assets of Al, which has a long superconducting coherence, and Nb, which has a significant superconducting gap, we form low-disordered JoFETs with large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip.}, author = {Aggarwal, Kushagra and Hofmann, Andrea C and Jirovec, Daniel and Prieto Gonzalez, Ivan and Sammak, Amir and Botifoll, Marc and Marti-Sanchez, Sara and Veldhorst, Menno and Arbiol, Jordi and Scappucci, Giordano and Katsaros, Georgios}, booktitle = {arXiv}, title = {{Enhancement of proximity induced superconductivity in planar Germanium}}, doi = {10.48550/arXiv.2012.00322}, year = {2020}, } @unpublished{10065, abstract = {We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In conclusion, Ge/SiGe possesses all ingredients necessary for building a singlet-triplet qubit.}, author = {Hofmann, Andrea C and Jirovec, Daniel and Borovkov, Maxim and Prieto Gonzalez, Ivan and Ballabio, Andrea and Frigerio, Jacopo and Chrastina, Daniel and Isella, Giovanni and Katsaros, Georgios}, booktitle = {arXiv}, title = {{Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits}}, doi = {10.48550/arXiv.1910.05841}, year = {2019}, } @article{5816, abstract = {Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and therefore a scalable quantum computer architecture. To solve signal-line bandwidth and fan-out problems, microwave sources required for qubit manipulation might be embedded close to the qubit chip, typically operating at temperatures below 4 K. Here, we perform the first low temperature measurements of a 130 nm BiCMOS based SiGe voltage controlled oscillator at cryogenic temperature. We determined the frequency and output power dependence on temperature and magnetic field up to 5 T and measured the temperature influence on its noise performance. The device maintains its full functionality from 300 K to 4 K. The carrier frequency at 4 K increases by 3% with respect to the carrier frequency at 300 K, and the output power at 4 K increases by 10 dB relative to the output power at 300 K. The frequency tuning range of approximately 20% remains unchanged between 300 K and 4 K. In an in-plane magnetic field of 5 T, the carrier frequency shifts by only 0.02% compared to the frequency at zero magnetic field.}, author = {Hollmann, Arne and Jirovec, Daniel and Kucharski, Maciej and Kissinger, Dietmar and Fischer, Gunter and Schreiber, Lars R.}, issn = {0034-6748}, journal = {Review of Scientific Instruments}, number = {11}, publisher = {AIP Publishing}, title = {{30 GHz-voltage controlled oscillator operating at 4 K}}, doi = {10.1063/1.5038258}, volume = {89}, year = {2018}, }