---
OA_place: repository
OA_type: green
_id: '22619'
abstract:
- lang: eng
text: Planar germanium is currently the only semiconducting platform where high-coherence
spin qubits and proximity-induced superconductivity have each been demonstrated.
Recent research into spin qubits in Ge/SiGe heterostructures has focused on increasing
the thickness of the SiGe capping layer, reporting improvements in the electrostatic
noise levels. Meanwhile, heterostructures with thinner capping layers remain rather
unexplored, despite the potential advantages for proximity-induced superconductivity.
Here, we study a Ge/SiGe heterostructure with a thin SiGe cap d - 4nm and investigate
its viability to host low-noise quantum dots. To keep the thermal budget compatible
with superconducting layers, low-temperature oxide deposition processes were developed
and implemented for the gate dielectrics. The charge noise level of the fabricated
devices is estimated to be 1.8 +- 1.0 μeV/ square HZ, comparable to devices
fabricated on shallow heterostructures ( d - 20nm) with high-temperature deposited
oxides. Low charge noise levels, together with the straightforward integration
of superconductors, make this heterostructure an attractive platform for prototyping
hybrid semiconducting–superconducting devices.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
acknowledgement: 'We sincerely thank Nick van Loo, Greg Mazur, Dhananjay Joshi, and
Srijit Goswami for their inputs on low-temperature HfOx deposition; Matias Urdampilleta
and Daniel Jirovec for discussions; and Kristen Léonard for the careful reading
of the manuscript. This research was supported by the Scientific Service Units of
ISTA through resources provided by the Miba Machine Shop and the Nanofabrication
facility. The authors acknowledge support from the NOMIS Foundation; the European
Innovation Council Pathfinder Grant No. 101115315 (QuKiT); the FWF Projects with
DOI:10.55776/F86, DOI:10.55776/PAT7682124, and DOI:10.55776/P36507; and the HE-MSCA-PF
project with DOI:10.3030/101150858. ICN2 is supported by the Severo Ochoa Program
from Spanish MCIN/AEI (Grant No.: CEX2021-001214-S) and is funded by the CERCA Program/Generalitat
de Catalunya. ICN2 acknowledges funding from Generalitat de Catalunya (No. 2021SGR00457).
We acknowledge support from the CSIC Interdisciplinary Thematic Platform (PTI+)
on Quantum Technologies (PTI-QTEP+).'
article_number: '033505'
article_processing_charge: No
article_type: original
arxiv: 1
author:
- first_name: Maksim
full_name: Borovkov, Maksim
id: 1fd0975f-8b61-11ed-b69e-d149334f28c5
last_name: Borovkov
- first_name: Yona A
full_name: Schell, Yona A
id: fe39122d-06bb-11ec-a33b-9e22b40e40a5
last_name: Schell
- first_name: Dina
full_name: Sokolova, Dina
id: 2d2d62f8-72f0-11ef-b75a-8ec3e8a60032
last_name: Sokolova
- first_name: Kevin Etienne Robert
full_name: Roux, Kevin Etienne Robert
id: 53f93ea2-803f-11ed-ab7e-b283135794ef
last_name: Roux
- first_name: Paul
full_name: Falthansl-Scheinecker, Paul
id: 85b43b21-15b2-11ec-abd3-e2c252cc2285
last_name: Falthansl-Scheinecker
- first_name: Giorgio
full_name: Fabris, Giorgio
id: 298cf6f3-1ff6-11ee-9fa6-d94cfa0b3352
last_name: Fabris
- first_name: Devashish C
full_name: Shah, Devashish C
id: de191434-4e7e-11ef-bf4b-9a056fc19fc3
last_name: Shah
orcid: 0009-0007-5829-7707
- first_name: Jaime
full_name: Saez Mollejo, Jaime
id: e0390f72-f6e0-11ea-865d-862393336714
last_name: Saez Mollejo
- first_name: Rodolfo
full_name: Previdi, Rodolfo
id: bc4ea1dc-00ce-11ec-8a4e-b325ca8b9876
last_name: Previdi
- first_name: Inas
full_name: Taha, Inas
last_name: Taha
- first_name: Aziz
full_name: Genç, Aziz
last_name: Genç
- first_name: Jordi
full_name: Arbiol, Jordi
last_name: Arbiol
- first_name: Stefano
full_name: Calcaterra, Stefano
last_name: Calcaterra
- first_name: Afonso De Cerdeira
full_name: Oliveira, Afonso De Cerdeira
last_name: Oliveira
- first_name: Daniel
full_name: Chrastina, Daniel
last_name: Chrastina
- first_name: Giovanni
full_name: Isella, Giovanni
last_name: Isella
- first_name: Anton
full_name: Bubis, Anton
id: 1f6212b5-f795-11ec-9c0c-de4780302890
last_name: Bubis
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Borovkov M, Schell YA, Sokolova D, et al. Low-noise quantum dots in ultra-shallow
Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting
devices. Applied Physics Letters. 2026;129(3). doi:10.1063/5.0333142
apa: Borovkov, M., Schell, Y. A., Sokolova, D., Roux, K. E. R., Falthansl-Scheinecker,
P., Fabris, G., … Katsaros, G. (2026). Low-noise quantum dots in ultra-shallow
Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting
devices. Applied Physics Letters. AIP Publishing. https://doi.org/10.1063/5.0333142
chicago: Borovkov, Maksim, Yona A Schell, Dina Sokolova, Kevin Etienne Robert Roux,
Paul Falthansl-Scheinecker, Giorgio Fabris, Devashish C Shah, et al. “Low-Noise
Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid
Semiconducting–Superconducting Devices.” Applied Physics Letters. AIP Publishing,
2026. https://doi.org/10.1063/5.0333142.
ieee: M. Borovkov et al., “Low-noise quantum dots in ultra-shallow Ge/SiGe
heterostructures for prototyping hybrid semiconducting–superconducting devices,”
Applied Physics Letters, vol. 129, no. 3. AIP Publishing, 2026.
ista: Borovkov M, Schell YA, Sokolova D, Roux KER, Falthansl-Scheinecker P, Fabris
G, Shah DC, Saez Mollejo J, Previdi R, Taha I, Genç A, Arbiol J, Calcaterra S,
Oliveira ADC, Chrastina D, Isella G, Bubis A, Katsaros G. 2026. Low-noise quantum
dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting
devices. Applied Physics Letters. 129(3), 033505.
mla: Borovkov, Maksim, et al. “Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures
for Prototyping Hybrid Semiconducting–Superconducting Devices.” Applied Physics
Letters, vol. 129, no. 3, 033505, AIP Publishing, 2026, doi:10.1063/5.0333142.
short: M. Borovkov, Y.A. Schell, D. Sokolova, K.E.R. Roux, P. Falthansl-Scheinecker,
G. Fabris, D.C. Shah, J. Saez Mollejo, R. Previdi, I. Taha, A. Genç, J. Arbiol,
S. Calcaterra, A.D.C. Oliveira, D. Chrastina, G. Isella, A. Bubis, G. Katsaros,
Applied Physics Letters 129 (2026).
corr_author: '1'
das_tickbox: '1'
dataavailabilitystatement: The data that support the findings of this study are openly
available in Institute of Science and Technology repository at http://doi.org/10.15479/AT-ISTA-22242,
Ref. 50.
date_created: 2026-08-02T22:01:53Z
date_published: 2026-07-20T00:00:00Z
date_updated: 2026-08-03T11:08:39Z
day: '20'
department:
- _id: GeKa
- _id: GradSch
- _id: NanoFab
doi: 10.1063/5.0333142
external_id:
arxiv:
- '2602.21363'
fulldoi: https://doi.org/10.1063/5.0333142
intvolume: ' 129'
issue: '3'
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://doi.org/10.48550/arXiv.2602.21363
month: '07'
oa: 1
oa_version: Preprint
project:
- _id: bdc2ca30-d553-11ed-ba76-cf164a5bb811
grant_number: '101115315'
name: Quantum bits with Kitaev Transmons
- _id: 34a66131-11ca-11ed-8bc3-a31681c6b03e
grant_number: F8606
name: 'Center for Correlated Quantum Materials and Solid State Quantum Systems:
Conventional and unconventional topological superconductors'
- _id: 5b9e579c-ab3d-11f0-914f-88754c5b5a3f
grant_number: PAT 7682124
name: Superconducting spin qubits in planar Ge
- _id: bd8bd29e-d553-11ed-ba76-f0070d4b237a
grant_number: P36507
name: Merging spin and superconducting qubits in planar Ge
- _id: 8ea8abf7-16d5-11f0-9cad-c41e56ec8bb3
grant_number: '101150858'
name: Realization and Manipulation of a Planar hybrid superconducting Andreev spin
qubit in Germanium
publication: Applied Physics Letters
publication_identifier:
eissn:
- 1077-3118
issn:
- 0003-6951
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
related_material:
record:
- id: '22242'
relation: research_data
status: public
researchdata_availability: yes
scopus_import: '1'
status: public
supplementarymaterial: yes
title: Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping
hybrid semiconducting–superconducting devices
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 129
year: '2026'
...
---
_id: '13264'
abstract:
- lang: eng
text: "We build a parametric amplifier with a Josephson field-effect transistor
(JoFET) as the active element. The resonant frequency of the device is field-effect
tunable over a range of 2 GHz. The JoFET amplifier has 20 dB of gain, 4 MHz of
instantaneous bandwidth, and a 1-dB compression point of -125.5 dBm when operated
at a fixed resonance frequency.\r\n\r\n"
acknowledged_ssus:
- _id: NanoFab
- _id: M-Shop
acknowledgement: We thank Shyam Shankar for helpful feedback on the manuscript. We
gratefully acknowledge the support of the ISTA nanofabrication facility, the Miba
Machine Shop, and the eMachine Shop. The NYU team acknowledges support from Army
Research Office Grant No. W911NF2110303.
article_number: '064032'
article_processing_charge: No
article_type: original
arxiv: 1
author:
- first_name: Duc T
full_name: Phan, Duc T
id: 29C8C0B4-F248-11E8-B48F-1D18A9856A87
last_name: Phan
- first_name: Paul
full_name: Falthansl-Scheinecker, Paul
id: 85b43b21-15b2-11ec-abd3-e2c252cc2285
last_name: Falthansl-Scheinecker
- first_name: Umang
full_name: Mishra, Umang
id: 4328fa4c-f128-11eb-9611-c107b0fe4d51
last_name: Mishra
- first_name: W. M.
full_name: Strickland, W. M.
last_name: Strickland
- first_name: D.
full_name: Langone, D.
last_name: Langone
- first_name: J.
full_name: Shabani, J.
last_name: Shabani
- first_name: Andrew P
full_name: Higginbotham, Andrew P
id: 4AD6785A-F248-11E8-B48F-1D18A9856A87
last_name: Higginbotham
orcid: 0000-0003-2607-2363
citation:
ama: Phan DT, Falthansl-Scheinecker P, Mishra U, et al. Gate-tunable superconductor-semiconductor
parametric amplifier. Physical Review Applied. 2023;19(6). doi:10.1103/PhysRevApplied.19.064032
apa: Phan, D. T., Falthansl-Scheinecker, P., Mishra, U., Strickland, W. M., Langone,
D., Shabani, J., & Higginbotham, A. P. (2023). Gate-tunable superconductor-semiconductor
parametric amplifier. Physical Review Applied. American Physical Society.
https://doi.org/10.1103/PhysRevApplied.19.064032
chicago: Phan, Duc T, Paul Falthansl-Scheinecker, Umang Mishra, W. M. Strickland,
D. Langone, J. Shabani, and Andrew P Higginbotham. “Gate-Tunable Superconductor-Semiconductor
Parametric Amplifier.” Physical Review Applied. American Physical Society,
2023. https://doi.org/10.1103/PhysRevApplied.19.064032.
ieee: D. T. Phan et al., “Gate-tunable superconductor-semiconductor parametric
amplifier,” Physical Review Applied, vol. 19, no. 6. American Physical
Society, 2023.
ista: Phan DT, Falthansl-Scheinecker P, Mishra U, Strickland WM, Langone D, Shabani
J, Higginbotham AP. 2023. Gate-tunable superconductor-semiconductor parametric
amplifier. Physical Review Applied. 19(6), 064032.
mla: Phan, Duc T., et al. “Gate-Tunable Superconductor-Semiconductor Parametric
Amplifier.” Physical Review Applied, vol. 19, no. 6, 064032, American Physical
Society, 2023, doi:10.1103/PhysRevApplied.19.064032.
short: D.T. Phan, P. Falthansl-Scheinecker, U. Mishra, W.M. Strickland, D. Langone,
J. Shabani, A.P. Higginbotham, Physical Review Applied 19 (2023).
corr_author: '1'
das_tickbox: '1'
dataavailabilitystatement: The raw data and the plotting code are available in the
Supplemental Material at http://link.aps.org/supplemental/10.1103/PhysRevApplied.19.064032.
Further data are available upon reasonable request.
date_created: 2023-07-23T22:01:12Z
date_published: 2023-06-09T00:00:00Z
date_updated: 2026-07-08T08:38:44Z
day: '09'
department:
- _id: AnHi
- _id: OnHo
doi: 10.1103/PhysRevApplied.19.064032
external_id:
arxiv:
- '2206.05746'
isi:
- '001012022600004'
fulldoi: https://doi.org/10.1103/PhysRevApplied.19.064032
intvolume: ' 19'
isi: 1
issue: '6'
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://arxiv.org/abs/2206.05746
month: '06'
oa: 1
oa_version: Preprint
publication: Physical Review Applied
publication_identifier:
eissn:
- 2331-7019
publication_status: published
publisher: American Physical Society
quality_controlled: '1'
related_material:
record:
- id: '14547'
relation: dissertation_contains
status: public
researchdata_availability: yes (supplementary data)
scopus_import: '1'
status: public
supplementarymaterial: yes
title: Gate-tunable superconductor-semiconductor parametric amplifier
type: journal_article
user_id: 68b8ca59-c5b3-11ee-8790-cd641c68093d
volume: 19
year: '2023'
...