@article{22619,
  abstract     = {Planar germanium is currently the only semiconducting platform where high-coherence spin qubits and proximity-induced superconductivity have each been demonstrated. Recent research into spin qubits in Ge/SiGe heterostructures has focused on increasing the thickness of the SiGe capping layer, reporting improvements in the electrostatic noise levels. Meanwhile, heterostructures with thinner capping layers remain rather unexplored, despite the potential advantages for proximity-induced superconductivity. Here, we study a Ge/SiGe heterostructure with a thin SiGe cap d - 4nm and investigate its viability to host low-noise quantum dots. To keep the thermal budget compatible with superconducting layers, low-temperature oxide deposition processes were developed and implemented for the gate dielectrics. The charge noise level of the fabricated devices is estimated to be 1.8  +- 1.0 μeV/ square HZ⁠, comparable to devices fabricated on shallow heterostructures (⁠ d - 20nm⁠) with high-temperature deposited oxides. Low charge noise levels, together with the straightforward integration of superconductors, make this heterostructure an attractive platform for prototyping hybrid semiconducting–superconducting devices.},
  author       = {Borovkov, Maksim and Schell, Yona A and Sokolova, Dina and Roux, Kevin Etienne Robert and Falthansl-Scheinecker, Paul and Fabris, Giorgio and Shah, Devashish C and Saez Mollejo, Jaime and Previdi, Rodolfo and Taha, Inas and Genç, Aziz and Arbiol, Jordi and Calcaterra, Stefano and Oliveira, Afonso De Cerdeira and Chrastina, Daniel and Isella, Giovanni and Bubis, Anton and Katsaros, Georgios},
  issn         = {1077-3118},
  journal      = {Applied Physics Letters},
  number       = {3},
  publisher    = {AIP Publishing},
  title        = {{Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting devices}},
  doi          = {10.1063/5.0333142},
  volume       = {129},
  year         = {2026},
}

@article{19424,
  abstract     = {Hole spin qubits are rapidly emerging as the workhorse of semiconducting quantum processors because of their large spin-orbit interaction, enabling fast all-electric operations at low power. However, spin-orbit interaction also causes non-uniformities in devices, resulting in locally varying qubit energies and site-dependent anisotropies. While these anisotropies can be used to drive single-spins, if not properly harnessed, they can hinder the path toward large-scale quantum processors. Here, we report on microwave-driven singlet-triplet qubits in planar germanium and use them to investigate the anisotropy of two spins in a double quantum dot. We show two distinct operating regimes depending on the magnetic field direction. For in-plane fields, the two spins are largely anisotropic, and electrically tunable, which enables to measure all the available transitions; coherence times exceeding 3 $\mu$s are extracted. For out-of-plane fields, they have an isotropic response but preserve the substantial energy difference required to address the singlet-triplet qubit. Even in this field direction, where the qubit lifetime
is strongly affected by nuclear spins, we find 400 ns coherence times. Our work adds a valuable tool to investigate and harness the anisotropy of spin qubits and can be implemented in any large-scale NxN device, facilitating the path towards scalable quantum processors.},
  author       = {Saez Mollejo, Jaime and Jirovec, Daniel and Schell, Yona A and Kukucka, Josip and Calcaterra, Stefano and Chrastina, Daniel and Isella, Giovanni and Rimbach-Russ, Maximilian and Bosco, Stefano and Katsaros, Georgios},
  issn         = {2041-1723},
  journal      = {Nature Communications},
  publisher    = {Springer Nature},
  title        = {{Exchange anisotropies in microwave-driven singlet-triplet qubits}},
  doi          = {10.1038/s41467-025-58969-y},
  volume       = {16},
  year         = {2025},
}