@misc{18886, abstract = {Research Data for publication 'Strong charge-photon coupling in planar germanium enabled by granular aluminium superinductors'}, author = {Janik, Marian}, publisher = {Institute of Science and Technology Austria}, title = {{Research data for publication 'Strong charge-photon coupling in planar germanium enabled by granular aluminium superinductors'}}, doi = {10.15479/AT:ISTA:18886}, year = {2025}, } @article{19401, abstract = {High kinetic inductance superconductors are gaining increasing interest for the realisation of qubits, amplifiers and detectors. Moreover, thanks to their high impedance, quantum buses made of such materials enable large zero-point fluctuations of the voltage, boosting the coupling rates to spin and charge qubits. However, fully exploiting the potential of disordered or granular superconductors is challenging, as their inductance and, therefore, impedance at high values are difficult to control. Here, we report a reproducible fabrication of granular aluminium resonators by developing a wireless ohmmeter, which allows in situ measurements during film deposition and, therefore, control of the kinetic inductance of granular aluminium films. Reproducible fabrication of circuits with impedances (inductances) exceeding 13 kΩ (1 nH per square) is now possible. By integrating a 7.9 kΩ resonator with a germanium double quantum dot, we demonstrate strong charge-photon coupling with a rate of gc/2π = 566 ± 2 MHz. This broadly applicable method opens the path for novel qubits and high-fidelity, long-distance two-qubit gates.}, author = {Janik, Marian and Roux, Kevin Etienne Robert and Borja Espinosa, Carla N and Sagi, Oliver and Baghdadi, Abdulhamid and Adletzberger, Thomas and Calcaterra, Stefano and Botifoll, Marc and Garzón Manjón, Alba and Arbiol, Jordi and Chrastina, Daniel and Isella, Giovanni and Pop, Ioan M. and Katsaros, Georgios}, issn = {2041-1723}, journal = {Nature Communications}, publisher = {Springer Nature}, title = {{Strong charge-photon coupling in planar germanium enabled by granular aluminium superinductors}}, doi = {10.1038/s41467-025-57252-4}, volume = {16}, year = {2025}, } @misc{19409, abstract = {This .zip file contains the data to reproduce the figures and supplementary figures of "Exchange anisotropies in microwave-driven singlet-triplet qubits" by Jaime Saez-Mollejo et al. }, author = {Saez Mollejo, Jaime}, publisher = {Institute of Science and Technology Austria}, title = {{Exchange anisotropies in microwave-driven singlet-triplet qubits}}, doi = {10.15479/AT:ISTA:19409}, year = {2025}, } @misc{19885, abstract = {This .zip file contains the data to reproduce the figures and supplementary figures of "Automated All-RF Tuning for Spin Qubit Readout and Control" by Cornelius Carlsson and Jaime Saez-Mollejo et al.}, author = {Saez Mollejo, Jaime}, publisher = {Institute of Science and Technology Austria}, title = {{Automated All-RF Tuning for Spin Qubit Readout and Control}}, doi = {10.15479/AT:ISTA:19885}, year = {2025}, } @article{19424, abstract = {Hole spin qubits are rapidly emerging as the workhorse of semiconducting quantum processors because of their large spin-orbit interaction, enabling fast all-electric operations at low power. However, spin-orbit interaction also causes non-uniformities in devices, resulting in locally varying qubit energies and site-dependent anisotropies. While these anisotropies can be used to drive single-spins, if not properly harnessed, they can hinder the path toward large-scale quantum processors. Here, we report on microwave-driven singlet-triplet qubits in planar germanium and use them to investigate the anisotropy of two spins in a double quantum dot. We show two distinct operating regimes depending on the magnetic field direction. For in-plane fields, the two spins are largely anisotropic, and electrically tunable, which enables to measure all the available transitions; coherence times exceeding 3 $\mu$s are extracted. For out-of-plane fields, they have an isotropic response but preserve the substantial energy difference required to address the singlet-triplet qubit. Even in this field direction, where the qubit lifetime is strongly affected by nuclear spins, we find 400 ns coherence times. Our work adds a valuable tool to investigate and harness the anisotropy of spin qubits and can be implemented in any large-scale NxN device, facilitating the path towards scalable quantum processors.}, author = {Saez Mollejo, Jaime and Jirovec, Daniel and Schell, Yona A and Kukucka, Josip and Calcaterra, Stefano and Chrastina, Daniel and Isella, Giovanni and Rimbach-Russ, Maximilian and Bosco, Stefano and Katsaros, Georgios}, issn = {2041-1723}, journal = {Nature Communications}, publisher = {Springer Nature}, title = {{Exchange anisotropies in microwave-driven singlet-triplet qubits}}, doi = {10.1038/s41467-025-58969-y}, volume = {16}, year = {2025}, } @phdthesis{19836, abstract = {Over the past century, researchers have been fascinated by the quantum nature of the physical world, initially striving to understand its fundamental principles and consequences, and eventually progressing toward engineering systems that can control and manipulate quantum properties. Today, we stand at the dawn of the quantum technology era. While some quantum technologies follow well-defined roadmaps, others are still in the exciting and uncertain early stages of development. In the fields of quantum computing and quantum simulation, research is being conducted across a wide variety of platforms. Each of these demonstrates control over quantum properties but also faces challenges in scaling up to the level of a mature technology. This thesis explores some of the fundamental properties of hole spin qubits in planar germanium. Semiconductor spin qubits are considered strong candidates for the realization of quantum processors, owing to their long relaxation and coherence times, as well as their compatibility with existing semiconductor industry infrastructure. Among these, hole spin qubits in planar germanium are particularly promising. Their advantages include a large effective mass, which eases fabrication constraints; inherent protection from hyperfine noise; and strong spin-orbit interaction, which enables fast and purely electrical control. However, spin-orbit coupling also introduces site-dependent variability across qubits, particularly in the g-tensors and spin-flip tunneling, which might cause that the quantization axes are not aligned. In this thesis, we investigate the tilt between the quantization axes of two hole spins hosted in a double quantum dot as a function of both the magnetic field direction and various electrostatic configurations, demonstrating that both parameters influence this tilt. We conclude by introducing a machine-learning-assisted routine to automatically tune baseband spin qubits. This approach may prove to be a powerful tool for characterizing spin-orbit effects and gaining deeper insight into the physics governing spin qubit behavior. }, author = {Saez Mollejo, Jaime}, issn = {2663-337X}, pages = {175}, publisher = {Institute of Science and Technology Austria}, title = {{Singlet-triplet qubits in planar Germanium: From exchange anisotropies to autonomous tuning }}, doi = {10.15479/AT-ISTA-19836}, year = {2025}, } @article{15018, abstract = {The epitaxial growth of a strained Ge layer, which is a promising candidate for the channel material of a hole spin qubit, has been demonstrated on 300 mm Si wafers using commercially available Si0.3Ge0.7 strain relaxed buffer (SRB) layers. The assessment of the layer and the interface qualities for a buried strained Ge layer embedded in Si0.3Ge0.7 layers is reported. The XRD reciprocal space mapping confirmed that the reduction of the growth temperature enables the 2-dimensional growth of the Ge layer fully strained with respect to the Si0.3Ge0.7. Nevertheless, dislocations at the top and/or bottom interface of the Ge layer were observed by means of electron channeling contrast imaging, suggesting the importance of the careful dislocation assessment. The interface abruptness does not depend on the selection of the precursor gases, but it is strongly influenced by the growth temperature which affects the coverage of the surface H-passivation. The mobility of 2.7 × 105 cm2/Vs is promising, while the low percolation density of 3 × 1010 /cm2 measured with a Hall-bar device at 7 K illustrates the high quality of the heterostructure thanks to the high Si0.3Ge0.7 SRB quality.}, author = {Shimura, Yosuke and Godfrin, Clement and Hikavyy, Andriy and Li, Roy and Aguilera Servin, Juan L and Katsaros, Georgios and Favia, Paola and Han, Han and Wan, Danny and de Greve, Kristiaan and Loo, Roger}, issn = {1369-8001}, journal = {Materials Science in Semiconductor Processing}, keywords = {Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science}, number = {5}, publisher = {Elsevier}, title = {{Compressively strained epitaxial Ge layers for quantum computing applications}}, doi = {10.1016/j.mssp.2024.108231}, volume = {174}, year = {2024}, } @article{18653, abstract = {Charge sensing is a sensitive technique for probing quantum devices, of particular importance for spin-qubit readout. To achieve good readout sensitivities, the proximity of the charge sensor to the device to be measured is a necessity. However, this proximity also means that the operation of the device affects, in turn, the sensor tuning and ultimately the readout sensitivity. We present an approach for compensating for this crosstalk effect allowing for the gate voltages of the measured device to be swept in a 1-V × 1-V window while maintaining a sensor configuration chosen by a Bayesian optimizer. Our algorithm will hopefully be a major contribution to the suite of fully automated solutions required for the operation of large quantum device architectures.}, author = {Hickie, Joseph and Van Straaten, Barnaby and Fedele, Federico and Jirovec, Daniel and Ballabio, Andrea and Chrastina, Daniel and Isella, Giovanni and Katsaros, Georgios and Ares, Natalia}, issn = {2331-7019}, journal = {Physical Review Applied}, number = {6}, publisher = {American Physical Society}, title = {{Automated long-range compensation of an rf quantum dot sensor}}, doi = {10.1103/PhysRevApplied.22.064026}, volume = {22}, year = {2024}, } @article{14793, abstract = {Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a sin(2y) CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with ≈ 100% efficiency. The reported results open up the path towards integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on the same silicon technology compatible platform.}, author = {Valentini, Marco and Sagi, Oliver and Baghumyan, Levon and de Gijsel, Thijs and Jung, Jason and Calcaterra, Stefano and Ballabio, Andrea and Aguilera Servin, Juan L and Aggarwal, Kushagra and Janik, Marian and Adletzberger, Thomas and Seoane Souto, Rubén and Leijnse, Martin and Danon, Jeroen and Schrade, Constantin and Bakkers, Erik and Chrastina, Daniel and Isella, Giovanni and Katsaros, Georgios}, issn = {2041-1723}, journal = {Nature Communications}, publisher = {Springer Nature}, title = {{Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium}}, doi = {10.1038/s41467-023-44114-0}, volume = {15}, year = {2024}, } @phdthesis{18129, abstract = {State-of-the-art quantum computers, with roughly a thousand qubits, face a crucial technological challenge of scaling up. Spins confined in quantum dots (QDs) are a promising candidate for qubits due to their long coherence, tunability, control, and readout. However, their natural coupling is the short-ranged (∼ 100 nm) exchange interaction, limited to nearest neighbours. Long-ranged (∼ 1 mm) qubit interactions mediated by a photon could be engineered through a coherent spin-photon coupling. Achieving a strong coupling to a photon is inherently challenging in QDs due to the small dipole moment of the confined charge. However, the potential of high-impedance resonators to compensate for this has gained significant attention in the past decade. Nevertheless, previous QD circuit quantum electrodynamics implementations have not exceeded the impedance of ∼ 3.8 kΩ, leaving opportunities for significant improvement. The large kinetic inductance of granular aluminium (grAl) could provide an order-of-magnitude enhancement. However, fully exploiting the potential of disordered or granular superconductors is challenging as their impedances close to the superconductor-to-insulator transition are difficult to control reproducibly. We report on the realization of a wireless ohmmeter which allows in situ resistance measurements during film deposition and, therefore, indirect control of the kinetic inductance of grAl films. This allows us to reproducibly fabricate resonators with characteristic impedance exceeding the resistance quantum, even reaching 22.3 kW, due to the large sheet kinetic inductance of up to 3 nH □−1 . By integrating an 8 kW resonator with a germanium double QD, we demonstrate a strong charge-photon coupling with the highest rate reported, 566 MHz. The demonstrated method and grAl properties make these resonators suitable for boosting the spin-photon coupling strength, a crucial requirement for fast, high-fidelity, long-distance two-qubit gates. }, author = {Janik, Marian}, issn = {2663-337X}, pages = {164}, publisher = {Institute of Science and Technology Austria}, title = {{Strong charge-photon coupling in Germanium enabled by granular aluminium superinductors}}, doi = {10.15479/at:ista:18129}, year = {2024}, } @unpublished{18144, abstract = {High kinetic inductance superconductors are gaining increasing interest for the realisation of qubits, amplifiers and detectors. Moreover, thanks to their high impedance, quantum buses made of such materials enable large zero-point fluctuations of the voltage, boosting the coupling rates to spin and charge qubits. However, fully exploiting the potential of disordered or granular superconductors is challenging, as their inductance and, therefore, impedance at high values are difficult to control. Here we have integrated a granular aluminium resonator, having a characteristic impedance exceeding the resistance quantum, with a germanium double quantum dot and demonstrate strong charge-photon coupling with a rate of $g_\text{c}/2\pi= (566 \pm 2)$ MHz. This was achieved due to the realisation of a wireless ohmmeter, which allows \emph{in situ} measurements during film deposition and, therefore, control of the kinetic inductance of granular aluminium films. Reproducible fabrication of circuits with impedances (inductances) exceeding 13 k$\Omega$ (1 nH per square) is now possible. This broadly applicable method opens the path for novel qubits and high-fidelity, long-distance two-qubit gates.}, author = {Janik, Marian and Roux, Kevin Etienne Robert and Borja Espinosa, Carla N and Sagi, Oliver and Baghdadi, Abdulhamid and Adletzberger, Thomas and Calcaterra, Stefano and Botifoll, Marc and Manjón, Alba Garzón and Arbiol, Jordi and Chrastina, Daniel and Isella, Giovanni and Pop, Ioan M. and Katsaros, Georgios}, booktitle = {arXiv}, title = {{Strong charge-photon coupling in planar germanium enabled by granular aluminium superinductors}}, doi = {10.48550/arXiv.2407.03079}, year = {2024}, }