[{"department":[{"_id":"GeKa"},{"_id":"GradSch"},{"_id":"NanoFab"}],"OA_type":"green","article_processing_charge":"No","month":"07","OA_place":"repository","main_file_link":[{"url":"https://doi.org/10.48550/arXiv.2602.21363","open_access":"1"}],"publication_status":"published","date_created":"2026-08-02T22:01:53Z","article_number":"033505","external_id":{"arxiv":["2602.21363"]},"dataavailabilitystatement":"The data that support the findings of this study are openly available in Institute of Science and Technology repository at http://doi.org/10.15479/AT-ISTA-22242, Ref. 50.","date_published":"2026-07-20T00:00:00Z","type":"journal_article","related_material":{"record":[{"relation":"research_data","id":"22242","status":"public"}]},"arxiv":1,"das_tickbox":"1","fulldoi":"https://doi.org/10.1063/5.0333142","intvolume":"       129","publisher":"AIP Publishing","oa":1,"author":[{"first_name":"Maksim","id":"1fd0975f-8b61-11ed-b69e-d149334f28c5","full_name":"Borovkov, Maksim","last_name":"Borovkov"},{"full_name":"Schell, Yona A","last_name":"Schell","first_name":"Yona A","id":"fe39122d-06bb-11ec-a33b-9e22b40e40a5"},{"last_name":"Sokolova","full_name":"Sokolova, Dina","first_name":"Dina","id":"2d2d62f8-72f0-11ef-b75a-8ec3e8a60032"},{"full_name":"Roux, Kevin Etienne Robert","last_name":"Roux","id":"53f93ea2-803f-11ed-ab7e-b283135794ef","first_name":"Kevin Etienne Robert"},{"id":"85b43b21-15b2-11ec-abd3-e2c252cc2285","first_name":"Paul","full_name":"Falthansl-Scheinecker, Paul","last_name":"Falthansl-Scheinecker"},{"id":"298cf6f3-1ff6-11ee-9fa6-d94cfa0b3352","first_name":"Giorgio","last_name":"Fabris","full_name":"Fabris, Giorgio"},{"first_name":"Devashish C","id":"de191434-4e7e-11ef-bf4b-9a056fc19fc3","orcid":"0009-0007-5829-7707","last_name":"Shah","full_name":"Shah, Devashish C"},{"full_name":"Saez Mollejo, Jaime","last_name":"Saez Mollejo","id":"e0390f72-f6e0-11ea-865d-862393336714","first_name":"Jaime"},{"id":"bc4ea1dc-00ce-11ec-8a4e-b325ca8b9876","first_name":"Rodolfo","last_name":"Previdi","full_name":"Previdi, Rodolfo"},{"first_name":"Inas","last_name":"Taha","full_name":"Taha, Inas"},{"full_name":"Genç, Aziz","last_name":"Genç","first_name":"Aziz"},{"first_name":"Jordi","full_name":"Arbiol, Jordi","last_name":"Arbiol"},{"first_name":"Stefano","last_name":"Calcaterra","full_name":"Calcaterra, Stefano"},{"first_name":"Afonso De Cerdeira","last_name":"Oliveira","full_name":"Oliveira, Afonso De Cerdeira"},{"last_name":"Chrastina","full_name":"Chrastina, Daniel","first_name":"Daniel"},{"first_name":"Giovanni","full_name":"Isella, Giovanni","last_name":"Isella"},{"last_name":"Bubis","full_name":"Bubis, Anton","first_name":"Anton","id":"1f6212b5-f795-11ec-9c0c-de4780302890"},{"last_name":"Katsaros","full_name":"Katsaros, Georgios","first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X"}],"corr_author":"1","_id":"22619","doi":"10.1063/5.0333142","date_updated":"2026-08-03T11:08:39Z","year":"2026","title":"Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting devices","acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","status":"public","quality_controlled":"1","citation":{"chicago":"Borovkov, Maksim, Yona A Schell, Dina Sokolova, Kevin Etienne Robert Roux, Paul Falthansl-Scheinecker, Giorgio Fabris, Devashish C Shah, et al. “Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting–Superconducting Devices.” <i>Applied Physics Letters</i>. AIP Publishing, 2026. <a href=\"https://doi.org/10.1063/5.0333142\">https://doi.org/10.1063/5.0333142</a>.","ieee":"M. Borovkov <i>et al.</i>, “Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting devices,” <i>Applied Physics Letters</i>, vol. 129, no. 3. AIP Publishing, 2026.","apa":"Borovkov, M., Schell, Y. A., Sokolova, D., Roux, K. E. R., Falthansl-Scheinecker, P., Fabris, G., … Katsaros, G. (2026). Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting devices. <i>Applied Physics Letters</i>. AIP Publishing. <a href=\"https://doi.org/10.1063/5.0333142\">https://doi.org/10.1063/5.0333142</a>","short":"M. Borovkov, Y.A. Schell, D. Sokolova, K.E.R. Roux, P. Falthansl-Scheinecker, G. Fabris, D.C. Shah, J. Saez Mollejo, R. Previdi, I. Taha, A. Genç, J. Arbiol, S. Calcaterra, A.D.C. Oliveira, D. Chrastina, G. Isella, A. Bubis, G. Katsaros, Applied Physics Letters 129 (2026).","ista":"Borovkov M, Schell YA, Sokolova D, Roux KER, Falthansl-Scheinecker P, Fabris G, Shah DC, Saez Mollejo J, Previdi R, Taha I, Genç A, Arbiol J, Calcaterra S, Oliveira ADC, Chrastina D, Isella G, Bubis A, Katsaros G. 2026. Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting devices. Applied Physics Letters. 129(3), 033505.","mla":"Borovkov, Maksim, et al. “Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting–Superconducting Devices.” <i>Applied Physics Letters</i>, vol. 129, no. 3, 033505, AIP Publishing, 2026, doi:<a href=\"https://doi.org/10.1063/5.0333142\">10.1063/5.0333142</a>.","ama":"Borovkov M, Schell YA, Sokolova D, et al. Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting devices. <i>Applied Physics Letters</i>. 2026;129(3). doi:<a href=\"https://doi.org/10.1063/5.0333142\">10.1063/5.0333142</a>"},"publication_identifier":{"eissn":["1077-3118"],"issn":["0003-6951"]},"oa_version":"Preprint","language":[{"iso":"eng"}],"issue":"3","acknowledgement":"We sincerely thank Nick van Loo, Greg Mazur, Dhananjay Joshi, and Srijit Goswami for their inputs on low-temperature HfOx deposition; Matias Urdampilleta and Daniel Jirovec for discussions; and Kristen Léonard for the careful reading of the manuscript. This research was supported by the Scientific Service Units of ISTA through resources provided by the Miba Machine Shop and the Nanofabrication facility. The authors acknowledge support from the NOMIS Foundation; the European Innovation Council Pathfinder Grant No. 101115315 (QuKiT); the FWF Projects with DOI:10.55776/F86, DOI:10.55776/PAT7682124, and DOI:10.55776/P36507; and the HE-MSCA-PF project with DOI:10.3030/101150858. ICN2 is supported by the Severo Ochoa Program from Spanish MCIN/AEI (Grant No.: CEX2021-001214-S) and is funded by the CERCA Program/Generalitat de Catalunya. ICN2 acknowledges funding from Generalitat de Catalunya (No. 2021SGR00457). We acknowledge support from the CSIC Interdisciplinary Thematic Platform (PTI+) on Quantum Technologies (PTI-QTEP+).","publication":"Applied Physics Letters","researchdata_availability":"yes","project":[{"name":"Quantum bits with Kitaev Transmons","grant_number":"101115315","_id":"bdc2ca30-d553-11ed-ba76-cf164a5bb811"},{"_id":"34a66131-11ca-11ed-8bc3-a31681c6b03e","grant_number":"F8606","name":"Center for Correlated Quantum Materials and Solid State Quantum Systems: Conventional  and unconventional topological superconductors"},{"name":"Superconducting spin qubits in planar Ge","grant_number":"PAT 7682124","_id":"5b9e579c-ab3d-11f0-914f-88754c5b5a3f"},{"_id":"bd8bd29e-d553-11ed-ba76-f0070d4b237a","name":"Merging spin and superconducting qubits in planar Ge","grant_number":"P36507"},{"name":"Realization and Manipulation of a Planar hybrid superconducting Andreev spin qubit in Germanium","grant_number":"101150858","_id":"8ea8abf7-16d5-11f0-9cad-c41e56ec8bb3"}],"supplementarymaterial":"yes","volume":129,"abstract":[{"text":"Planar germanium is currently the only semiconducting platform where high-coherence spin qubits and proximity-induced superconductivity have each been demonstrated. Recent research into spin qubits in Ge/SiGe heterostructures has focused on increasing the thickness of the SiGe capping layer, reporting improvements in the electrostatic noise levels. Meanwhile, heterostructures with thinner capping layers remain rather unexplored, despite the potential advantages for proximity-induced superconductivity. Here, we study a Ge/SiGe heterostructure with a thin SiGe cap d - 4nm and investigate its viability to host low-noise quantum dots. To keep the thermal budget compatible with superconducting layers, low-temperature oxide deposition processes were developed and implemented for the gate dielectrics. The charge noise level of the fabricated devices is estimated to be 1.8  +- 1.0 μeV/ square HZ⁠, comparable to devices fabricated on shallow heterostructures (⁠ d - 20nm⁠) with high-temperature deposited oxides. Low charge noise levels, together with the straightforward integration of superconductors, make this heterostructure an attractive platform for prototyping hybrid semiconducting–superconducting devices.","lang":"eng"}],"day":"20","article_type":"original","scopus_import":"1"},{"month":"07","OA_place":"repository","article_processing_charge":"No","department":[{"_id":"GradSch"},{"_id":"GeKa"}],"date_created":"2026-07-04T17:32:27Z","type":"research_data","date_published":"2026-07-04T00:00:00Z","related_material":{"record":[{"status":"public","relation":"used_in_publication","id":"22619"}],"link":[{"url":"https://github.com/ISTA-Nanoelectronics/noise_paper_public","relation":"research_data"}]},"fulldoi":"https://doi.org/10.15479/AT-ISTA-22242","publisher":"Institute of Science and Technology Austria","contributor":[{"last_name":"Borovkov","contributor_type":"contact_person","id":"1fd0975f-8b61-11ed-b69e-d149334f28c5","first_name":"Maksim"}],"corr_author":"1","author":[{"first_name":"Maksim","id":"1fd0975f-8b61-11ed-b69e-d149334f28c5","last_name":"Borovkov","full_name":"Borovkov, Maksim"}],"oa":1,"_id":"22242","date_updated":"2026-08-03T11:08:38Z","year":"2026","title":"Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices","acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"doi":"10.15479/AT-ISTA-22242","user_id":"68b8ca59-c5b3-11ee-8790-cd641c68093d","status":"public","has_accepted_license":"1","file":[{"date_created":"2026-07-04T17:28:49Z","file_name":"noise_paper_public_deposit.zip","checksum":"2a1ea297e01a7a202a6b144d69a46eef","content_type":"application/x-zip-compressed","date_updated":"2026-07-04T17:28:49Z","access_level":"open_access","success":1,"creator":"mborovko","file_size":3082596099,"file_id":"22243","relation":"main_file"}],"file_date_updated":"2026-07-04T17:28:49Z","citation":{"short":"M. Borovkov, (2026).","apa":"Borovkov, M. (2026). Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices. Institute of Science and Technology Austria. <a href=\"https://doi.org/10.15479/AT-ISTA-22242\">https://doi.org/10.15479/AT-ISTA-22242</a>","chicago":"Borovkov, Maksim. “Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices.” Institute of Science and Technology Austria, 2026. <a href=\"https://doi.org/10.15479/AT-ISTA-22242\">https://doi.org/10.15479/AT-ISTA-22242</a>.","ieee":"M. Borovkov, “Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices.” Institute of Science and Technology Austria, 2026.","ama":"Borovkov M. Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices. 2026. doi:<a href=\"https://doi.org/10.15479/AT-ISTA-22242\">10.15479/AT-ISTA-22242</a>","mla":"Borovkov, Maksim. <i>Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices</i>. Institute of Science and Technology Austria, 2026, doi:<a href=\"https://doi.org/10.15479/AT-ISTA-22242\">10.15479/AT-ISTA-22242</a>.","ista":"Borovkov M. 2026. Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices, Institute of Science and Technology Austria, <a href=\"https://doi.org/10.15479/AT-ISTA-22242\">10.15479/AT-ISTA-22242</a>."},"oa_version":"Published Version","tmp":{"short":"CC BY (4.0)","legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","image":"/images/cc_by.png"},"doi_confirm":"1","ddc":["530"],"license":"https://creativecommons.org/licenses/by/4.0/","project":[{"_id":"bdc2ca30-d553-11ed-ba76-cf164a5bb811","grant_number":"101115315","name":"Quantum bits with Kitaev Transmons"},{"_id":"34a66131-11ca-11ed-8bc3-a31681c6b03e","name":"Center for Correlated Quantum Materials and Solid State Quantum Systems: Conventional  and unconventional topological superconductors","grant_number":"F8606"},{"_id":"bd8bd29e-d553-11ed-ba76-f0070d4b237a","name":"Merging spin and superconducting qubits in planar Ge","grant_number":"P36507"},{"_id":"8ea8abf7-16d5-11f0-9cad-c41e56ec8bb3","name":"Realization and Manipulation of a Planar hybrid superconducting Andreev spin qubit in Germanium","grant_number":"101150858"},{"grant_number":"PAT 7682124","name":"Superconducting spin qubits in planar Ge","_id":"5b9e579c-ab3d-11f0-914f-88754c5b5a3f"}],"abstract":[{"lang":"eng","text":"This deposit contains the data and analysis code accompanying the publication \"Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting–Superconducting Devices\" (Borovkov et al.). The deposit includes the raw transport and current-noise measurements of three gate-defined quantum-dot devices as QCodes SQLite databases, the master table of the charge-noise (flank-method) analysis with the pointers linking every analyzed PSD trace to the raw data, the toy-model noise simulation datasets behind the supplementary figures, the archived analysis figures (PSD fits and lever-arm extractions), and the Python code reproducing the full analysis and all figures. The code is also maintained at https://github.com/ISTA-Nanoelectronics/noise_paper_public; instructions are provided in the README files."}],"day":"04"},{"citation":{"apa":"Tjøtta, M., Shah, D. C., Modi, K., Valentini, M., Seoane Souto, R., Katsaros, G., &#38; Danon, J. (2026). Fast-driving spectroscopy of current-phase relationships of individual Josephson elements. <i>Physical Review Applied</i>. American Physical Society. <a href=\"https://doi.org/10.1103/d3gl-qntm\">https://doi.org/10.1103/d3gl-qntm</a>","short":"M. Tjøtta, D.C. Shah, K. Modi, M. Valentini, R. Seoane Souto, G. Katsaros, J. Danon, Physical Review Applied 26 (2026).","ieee":"M. Tjøtta <i>et al.</i>, “Fast-driving spectroscopy of current-phase relationships of individual Josephson elements,” <i>Physical Review Applied</i>, vol. 26, no. 4. American Physical Society, 2026.","chicago":"Tjøtta, Maxim, Devashish C Shah, Kanishk Modi, Marco Valentini, Rubén Seoane Souto, Georgios Katsaros, and Jeroen Danon. “Fast-Driving Spectroscopy of Current-Phase Relationships of Individual Josephson Elements.” <i>Physical Review Applied</i>. American Physical Society, 2026. <a href=\"https://doi.org/10.1103/d3gl-qntm\">https://doi.org/10.1103/d3gl-qntm</a>.","ama":"Tjøtta M, Shah DC, Modi K, et al. Fast-driving spectroscopy of current-phase relationships of individual Josephson elements. <i>Physical Review Applied</i>. 2026;26(4). doi:<a href=\"https://doi.org/10.1103/d3gl-qntm\">10.1103/d3gl-qntm</a>","ista":"Tjøtta M, Shah DC, Modi K, Valentini M, Seoane Souto R, Katsaros G, Danon J. 2026. Fast-driving spectroscopy of current-phase relationships of individual Josephson elements. Physical Review Applied. 26(4), 044017.","mla":"Tjøtta, Maxim, et al. “Fast-Driving Spectroscopy of Current-Phase Relationships of Individual Josephson Elements.” <i>Physical Review Applied</i>, vol. 26, no. 4, 044017, American Physical Society, 2026, doi:<a href=\"https://doi.org/10.1103/d3gl-qntm\">10.1103/d3gl-qntm</a>."},"publication_identifier":{"eissn":["2331-7019"]},"oa_version":"Preprint","language":[{"iso":"eng"}],"issue":"4","acknowledgement":"The authors thank Afonso Oliveira, Stefano Calcaterra, Daniel Chrastina, and Giovanni Isella for providing the Ge/SiGe heterostructure. This work was supported by the Research Council of Norway through its Centers of Excellence funding scheme, Project No. 262633, “QuSpin,” the FWF Project with DOI:10.55776/PAT7682124, OeAD “ISTA Austria: ISTernship Summer Programme, Non-EU countries” (Ref. No.: MPC-2025-00945), the Spanish Comunidad de Madrid (CM) “Talento Program” (Project No. 2022-T1/IND-24070), and the Spanish Ministry of Science, Innovation, and Universities through Grants No. CEX2024-001445-S (Severo Ochoa Centres of Excellence program) and No. PID2022-140552NA-I00, funded by MCIN/AEI/10.13039/501100011033.","publication":"Physical Review Applied","researchdata_availability":"yes","project":[{"grant_number":"PAT 7682124","name":"Superconducting spin qubits in planar Ge","_id":"5b9e579c-ab3d-11f0-914f-88754c5b5a3f"}],"volume":26,"supplementarymaterial":"yes","abstract":[{"text":"Extracting the current-phase relationship (CPR) of a single superconducting junction is challenging in practice and traditionally involves embedding the junction in a larger superconducting circuit containing SQUIDs and/or resonators. Applying ac driving to the junction has proven to be a viable and less invasive way to extract information about the few lowest harmonics of the CPR, by locating the integer and fractional Shapiro steps in the 𝐼⁢𝑉-curve of the driven junction. Here, we present an alternative driving-based method that allows to extract the full harmonic content of a CPR in a relatively noninvasive way, by fitting the measured critical currents of the driven junction as a function of driving power. We test our method, both using numerical simulations and in experiments, and we show that it works accurately.","lang":"eng"}],"day":"01","article_type":"original","scopus_import":"1","OA_type":"green","department":[{"_id":"GeKa"},{"_id":"GradSch"}],"article_processing_charge":"No","month":"10","OA_place":"repository","publication_status":"published","main_file_link":[{"open_access":"1","url":"https://doi.org/10.48550/arXiv.2511.14313"}],"date_created":"2026-10-18T22:01:52Z","article_number":"044017","external_id":{"arxiv":["2511.14313"]},"dataavailabilitystatement":"The data that support the findings of this article are openly available at [10.5281/zenodo.22646275].","date_published":"2026-10-01T00:00:00Z","type":"journal_article","arxiv":1,"das_tickbox":"1","fulldoi":"https://doi.org/10.1103/d3gl-qntm","intvolume":"        26","publisher":"American Physical Society","author":[{"last_name":"Tjøtta","full_name":"Tjøtta, Maxim","first_name":"Maxim"},{"full_name":"Shah, Devashish C","last_name":"Shah","orcid":"0009-0007-5829-7707","id":"de191434-4e7e-11ef-bf4b-9a056fc19fc3","first_name":"Devashish C"},{"last_name":"Modi","full_name":"Modi, Kanishk","first_name":"Kanishk","id":"f05345fd-900f-11f1-bfd8-8c0b6eadcc7f"},{"last_name":"Valentini","full_name":"Valentini, Marco","id":"C0BB2FAC-D767-11E9-B658-BC13E6697425","first_name":"Marco"},{"first_name":"Rubén","full_name":"Seoane Souto, Rubén","last_name":"Seoane Souto"},{"last_name":"Katsaros","full_name":"Katsaros, Georgios","first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X"},{"first_name":"Jeroen","last_name":"Danon","full_name":"Danon, Jeroen"}],"oa":1,"_id":"23156","doi":"10.1103/d3gl-qntm","title":"Fast-driving spectroscopy of current-phase relationships of individual Josephson elements","year":"2026","date_updated":"2026-10-19T07:25:01Z","quality_controlled":"1","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","status":"public"}]