[{"citation":{"ama":"Jirovec D. Singlet-Triplet qubits and spin-orbit interaction in 2-dimensional Ge hole gases. 2021. doi:<a href=\"https://doi.org/10.15479/at:ista:10058\">10.15479/at:ista:10058</a>","short":"D. Jirovec, Singlet-Triplet Qubits and Spin-Orbit Interaction in 2-Dimensional Ge Hole Gases, Institute of Science and Technology Austria, 2021.","ieee":"D. Jirovec, “Singlet-Triplet qubits and spin-orbit interaction in 2-dimensional Ge hole gases,” Institute of Science and Technology Austria, 2021.","chicago":"Jirovec, Daniel. “Singlet-Triplet Qubits and Spin-Orbit Interaction in 2-Dimensional Ge Hole Gases.” Institute of Science and Technology Austria, 2021. <a href=\"https://doi.org/10.15479/at:ista:10058\">https://doi.org/10.15479/at:ista:10058</a>.","ista":"Jirovec D. 2021. Singlet-Triplet qubits and spin-orbit interaction in 2-dimensional Ge hole gases. Institute of Science and Technology Austria.","mla":"Jirovec, Daniel. <i>Singlet-Triplet Qubits and Spin-Orbit Interaction in 2-Dimensional Ge Hole Gases</i>. Institute of Science and Technology Austria, 2021, doi:<a href=\"https://doi.org/10.15479/at:ista:10058\">10.15479/at:ista:10058</a>.","apa":"Jirovec, D. (2021). <i>Singlet-Triplet qubits and spin-orbit interaction in 2-dimensional Ge hole gases</i>. Institute of Science and Technology Austria. <a href=\"https://doi.org/10.15479/at:ista:10058\">https://doi.org/10.15479/at:ista:10058</a>"},"file_date_updated":"2022-12-20T23:30:07Z","user_id":"ba8df636-2132-11f1-aed0-ed93e2281fdd","degree_awarded":"PhD","has_accepted_license":"1","doi":"10.15479/at:ista:10058","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)"},"publication_identifier":{"issn":["2663-337X"]},"acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"alternative_title":["ISTA Thesis"],"related_material":{"record":[{"id":"10066","relation":"part_of_dissertation","status":"public"},{"id":"10065","relation":"part_of_dissertation","status":"public"},{"relation":"part_of_dissertation","id":"8831","status":"public"},{"status":"public","id":"8909","relation":"part_of_dissertation"},{"status":"public","relation":"part_of_dissertation","id":"5816"}]},"date_updated":"2026-04-08T07:12:19Z","oa":1,"corr_author":"1","file":[{"file_id":"10061","date_created":"2021-09-30T14:29:14Z","file_size":32397600,"content_type":"application/x-zip-compressed","creator":"djirovec","checksum":"ad6bcb24083ed7c02baaf1885c9ea3d5","file_name":"PHD_Thesis_Jirovec_Source.zip","relation":"source_file","embargo_to":"open_access","date_updated":"2022-12-20T23:30:07Z","access_level":"closed"},{"content_type":"application/pdf","file_size":26910829,"date_created":"2021-10-05T07:56:49Z","file_id":"10087","checksum":"5fbe08d4f66d1153e04c47971538fae8","creator":"djirovec","file_name":"PHD_Thesis_pdfa2b_1.pdf","embargo":"2022-10-06","access_level":"open_access","date_updated":"2022-12-20T23:30:07Z","relation":"main_file"}],"abstract":[{"lang":"eng","text":"Quantum information and computation has become a vast field paved with opportunities for researchers and investors. As large multinational companies and international funds are heavily investing in quantum technologies it is still a question which platform is best suited for the task of realizing a scalable quantum processor. In this work we investigate hole spins in Ge quantum wells. These hold great promise as they possess several favorable properties: a small effective mass, a strong spin-orbit coupling, long relaxation time and an inherent immunity to hyperfine noise. All these characteristics helped Ge hole spin qubits to evolve from a single qubit to a fully entangled four qubit processor in only 3 years. Here, we investigated a qubit approach leveraging the large out-of-plane g-factors of heavy hole states in Ge quantum dots. We found this qubit to be reproducibly operable at extremely low magnetic field and at large speeds while maintaining coherence. This was possible because large differences of g-factors in adjacent dots can be achieved in the out-of-plane direction. In the in-plane direction the small g-factors, on the other hand, can be altered very effectively by the confinement potentials. Here, we found that this can even lead to a sign change of the g-factors. The resulting g-factor difference alters the dynamics of the system drastically and produces effects typically attributed to a spin-orbit induced spin-flip term.  The investigations carried out in this thesis give further insights into the possibilities of holes in Ge and reveal new physical properties that need to be considered when designing future spin qubit experiments."}],"_id":"10058","month":"10","keyword":["qubits","quantum computing","holes"],"supervisor":[{"orcid":"0000-0001-8342-202X","full_name":"Katsaros, Georgios","first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"}],"department":[{"_id":"GradSch"},{"_id":"GeKa"}],"author":[{"orcid":"0000-0002-7197-4801","full_name":"Jirovec, Daniel","first_name":"Daniel","last_name":"Jirovec","id":"4C473F58-F248-11E8-B48F-1D18A9856A87"}],"year":"2021","OA_place":"publisher","title":"Singlet-Triplet qubits and spin-orbit interaction in 2-dimensional Ge hole gases","article_processing_charge":"No","oa_version":"Published Version","publication_status":"published","publisher":"Institute of Science and Technology Austria","acknowledgement":"The author gratefully acknowledges support by the Austrian Science Fund (FWF), grants No P30207, and the Nomis foundation.","date_created":"2021-09-30T07:53:49Z","status":"public","project":[{"call_identifier":"FWF","_id":"2641CE5E-B435-11E9-9278-68D0E5697425","name":"Hole spin orbit qubits in Ge quantum wells","grant_number":"P30207"}],"date_published":"2021-10-05T00:00:00Z","day":"05","ddc":["621","539"],"page":"151","type":"dissertation","language":[{"iso":"eng"}]},{"day":"27","abstract":[{"lang":"eng","text":"The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning."}],"_id":"10066","type":"preprint","month":"07","language":[{"iso":"eng"}],"publication":"arXiv","department":[{"_id":"GeKa"}],"related_material":{"record":[{"relation":"later_version","id":"17389","status":"public"},{"id":"10058","relation":"dissertation_contains","status":"public"}]},"date_updated":"2026-05-20T22:30:49Z","external_id":{"arxiv":["2107.12975"]},"date_published":"2021-07-27T00:00:00Z","oa":1,"doi":"10.48550/arXiv.2107.12975","publication_status":"draft","acknowledgement":"We acknowledge Ang Li, Erik P. A. M. Bakkers (University of Eindhoven) for the fabrication of the Ge/Si nanowire. This work was supported by the Royal Society, the EPSRC National Quantum Technology Hub in Networked Quantum Information Technology (EP/M013243/1), Quantum Technology Capital (EP/N014995/1), EPSRC Platform Grant\r\n(EP/R029229/1), the European Research Council (Grant agreement 948932), the Swiss Nanoscience Institute, the\r\nNCCR SPIN, the EU H2020 European Microkelvin Platform EMP grant No. 824109, the Scientific Service Units\r\nof IST Austria through resources provided by the nanofabrication facility and, the FWF-P30207 project. This publication was also made possible through support from Templeton World Charity Foundation and John Templeton Foundation. The opinions expressed in this publication are those of the authors and do not necessarily reflect the views of the Templeton Foundations.","status":"public","date_created":"2021-10-01T12:40:22Z","project":[{"call_identifier":"FWF","_id":"2641CE5E-B435-11E9-9278-68D0E5697425","grant_number":"P30207","name":"Hole spin orbit qubits in Ge quantum wells"}],"acknowledged_ssus":[{"_id":"NanoFab"}],"article_number":"2107.12975","author":[{"last_name":"Severin","full_name":"Severin, B.","first_name":"B."},{"full_name":"Lennon, D. T.","first_name":"D. T.","last_name":"Lennon"},{"last_name":"Camenzind","first_name":"L. C.","full_name":"Camenzind, L. C."},{"first_name":"F.","full_name":"Vigneau, F.","last_name":"Vigneau"},{"full_name":"Fedele, F.","first_name":"F.","last_name":"Fedele"},{"orcid":"0000-0002-7197-4801","id":"4C473F58-F248-11E8-B48F-1D18A9856A87","last_name":"Jirovec","full_name":"Jirovec, Daniel","first_name":"Daniel"},{"last_name":"Ballabio","full_name":"Ballabio, A.","first_name":"A."},{"first_name":"D.","full_name":"Chrastina, D.","last_name":"Chrastina"},{"last_name":"Isella","first_name":"G.","full_name":"Isella, G."},{"last_name":"Kruijf","full_name":"Kruijf, M. de","first_name":"M. de"},{"full_name":"Carballido, M. J.","first_name":"M. J.","last_name":"Carballido"},{"first_name":"S.","full_name":"Svab, S.","last_name":"Svab"},{"full_name":"Kuhlmann, A. V.","first_name":"A. V.","last_name":"Kuhlmann"},{"last_name":"Braakman","first_name":"F. R.","full_name":"Braakman, F. R."},{"first_name":"S.","full_name":"Geyer, S.","last_name":"Geyer"},{"first_name":"F. N. M.","full_name":"Froning, F. N. M.","last_name":"Froning"},{"last_name":"Moon","first_name":"H.","full_name":"Moon, H."},{"last_name":"Osborne","full_name":"Osborne, M. A.","first_name":"M. A."},{"last_name":"Sejdinovic","first_name":"D.","full_name":"Sejdinovic, D."},{"orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","full_name":"Katsaros, Georgios","first_name":"Georgios"},{"first_name":"D. M.","full_name":"Zumbühl, D. M.","last_name":"Zumbühl"},{"full_name":"Briggs, G. A. D.","first_name":"G. A. D.","last_name":"Briggs"},{"first_name":"N.","full_name":"Ares, N.","last_name":"Ares"}],"citation":{"ama":"Severin B, Lennon DT, Camenzind LC, et al. Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. <i>arXiv</i>. doi:<a href=\"https://doi.org/10.48550/arXiv.2107.12975\">10.48550/arXiv.2107.12975</a>","short":"B. Severin, D.T. Lennon, L.C. Camenzind, F. Vigneau, F. Fedele, D. Jirovec, A. Ballabio, D. Chrastina, G. Isella, M. de Kruijf, M.J. Carballido, S. Svab, A.V. Kuhlmann, F.R. Braakman, S. Geyer, F.N.M. Froning, H. Moon, M.A. Osborne, D. Sejdinovic, G. Katsaros, D.M. Zumbühl, G.A.D. Briggs, N. Ares, ArXiv (n.d.).","ieee":"B. Severin <i>et al.</i>, “Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning,” <i>arXiv</i>. .","apa":"Severin, B., Lennon, D. T., Camenzind, L. C., Vigneau, F., Fedele, F., Jirovec, D., … Ares, N. (n.d.). Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. <i>arXiv</i>. <a href=\"https://doi.org/10.48550/arXiv.2107.12975\">https://doi.org/10.48550/arXiv.2107.12975</a>","mla":"Severin, B., et al. “Cross-Architecture Tuning of Silicon and SiGe-Based Quantum Devices Using Machine Learning.” <i>ArXiv</i>, 2107.12975, doi:<a href=\"https://doi.org/10.48550/arXiv.2107.12975\">10.48550/arXiv.2107.12975</a>.","ista":"Severin B, Lennon DT, Camenzind LC, Vigneau F, Fedele F, Jirovec D, Ballabio A, Chrastina D, Isella G, Kruijf M de, Carballido MJ, Svab S, Kuhlmann AV, Braakman FR, Geyer S, Froning FNM, Moon H, Osborne MA, Sejdinovic D, Katsaros G, Zumbühl DM, Briggs GAD, Ares N. Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. arXiv, 2107.12975.","chicago":"Severin, B., D. T. Lennon, L. C. Camenzind, F. Vigneau, F. Fedele, Daniel Jirovec, A. Ballabio, et al. “Cross-Architecture Tuning of Silicon and SiGe-Based Quantum Devices Using Machine Learning.” <i>ArXiv</i>, n.d. <a href=\"https://doi.org/10.48550/arXiv.2107.12975\">https://doi.org/10.48550/arXiv.2107.12975</a>."},"year":"2021","main_file_link":[{"url":"https://doi.org/10.48550/arXiv.2107.12975","open_access":"1"}],"user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","arxiv":1,"article_processing_charge":"No","title":"Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning","oa_version":"Preprint"},{"issue":"16","date_published":"2020-04-23T00:00:00Z","language":[{"iso":"eng"}],"day":"23","type":"other_academic_publication","article_processing_charge":"No","title":"Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020)","oa_version":"Published Version","author":[{"first_name":"Fei","full_name":"Gao, Fei","last_name":"Gao"},{"last_name":"Wang","first_name":"Jian‐Huan","full_name":"Wang, Jian‐Huan"},{"id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","last_name":"Watzinger","full_name":"Watzinger, Hannes","first_name":"Hannes"},{"last_name":"Hu","full_name":"Hu, Hao","first_name":"Hao"},{"full_name":"Rančić, Marko J.","first_name":"Marko J.","last_name":"Rančić"},{"full_name":"Zhang, Jie‐Yin","first_name":"Jie‐Yin","last_name":"Zhang"},{"first_name":"Ting","full_name":"Wang, Ting","last_name":"Wang"},{"first_name":"Yuan","full_name":"Yao, Yuan","last_name":"Yao"},{"first_name":"Gui‐Lei","full_name":"Wang, Gui‐Lei","last_name":"Wang"},{"first_name":"Josip","full_name":"Kukucka, Josip","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","last_name":"Kukucka"},{"full_name":"Vukušić, Lada","first_name":"Lada","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","last_name":"Vukušić","orcid":"0000-0003-2424-8636"},{"last_name":"Kloeffel","full_name":"Kloeffel, Christoph","first_name":"Christoph"},{"last_name":"Loss","first_name":"Daniel","full_name":"Loss, Daniel"},{"last_name":"Liu","first_name":"Feng","full_name":"Liu, Feng"},{"orcid":"0000-0001-8342-202X","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","first_name":"Georgios","full_name":"Katsaros, Georgios"},{"last_name":"Zhang","first_name":"Jian‐Jun","full_name":"Zhang, Jian‐Jun"}],"year":"2020","status":"public","date_created":"2024-08-20T08:22:42Z","publisher":"Wiley","publication_status":"published","oa":1,"date_updated":"2025-06-12T07:16:21Z","related_material":{"record":[{"relation":"other","id":"7541","status":"public"}]},"publication":"Advanced Materials","department":[{"_id":"GeKa"}],"volume":32,"month":"04","_id":"17444","abstract":[{"lang":"eng","text":"The first wafer-scale growth of site-controlled Ge/Si nanowires is reported by Georgios Katsaros, Jian-Jun Zhang, and co-workers in article number 1906523. They are highly uniform and their position, distance, length, and even square- or L-shaped structures can all be precisely controlled. The electrically tunable spin-orbit coupling demonstrated by transport measurements and the charge sensing between quantum dots in closely spaced wires open a path toward scalable qubit devices using nanowires on silicon."}],"intvolume":"        32","quality_controlled":"1","main_file_link":[{"open_access":"1","url":"https://doi.org/10.1002/adma.202070122"}],"user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","article_number":"2070122","citation":{"short":"F. Gao, J. Wang, H. Watzinger, H. Hu, M.J. Rančić, J. Zhang, T. Wang, Y. Yao, G. Wang, J. Kukucka, L. Vukušić, C. Kloeffel, D. Loss, F. Liu, G. Katsaros, J. Zhang, Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020), Wiley, 2020.","ama":"Gao F, Wang J, Watzinger H, et al. <i>Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020)</i>. Vol 32. Wiley; 2020. doi:<a href=\"https://doi.org/10.1002/adma.202070122\">10.1002/adma.202070122</a>","ista":"Gao F, Wang J, Watzinger H, Hu H, Rančić MJ, Zhang J, Wang T, Yao Y, Wang G, Kukucka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang J. 2020. Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020), Wiley,p.","apa":"Gao, F., Wang, J., Watzinger, H., Hu, H., Rančić, M. J., Zhang, J., … Zhang, J. (2020). <i>Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020)</i>. <i>Advanced Materials</i> (Vol. 32). Wiley. <a href=\"https://doi.org/10.1002/adma.202070122\">https://doi.org/10.1002/adma.202070122</a>","mla":"Gao, Fei, et al. “Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020).” <i>Advanced Materials</i>, vol. 32, no. 16, 2070122, Wiley, 2020, doi:<a href=\"https://doi.org/10.1002/adma.202070122\">10.1002/adma.202070122</a>.","chicago":"Gao, Fei, Jian‐Huan Wang, Hannes Watzinger, Hao Hu, Marko J. Rančić, Jie‐Yin Zhang, Ting Wang, et al. <i>Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020)</i>. <i>Advanced Materials</i>. Vol. 32. Wiley, 2020. <a href=\"https://doi.org/10.1002/adma.202070122\">https://doi.org/10.1002/adma.202070122</a>.","ieee":"F. Gao <i>et al.</i>, <i>Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020)</i>, vol. 32, no. 16. Wiley, 2020."},"publication_identifier":{"eissn":["1521-4095"],"issn":["0935-9648"]},"doi":"10.1002/adma.202070122"},{"license":"https://creativecommons.org/publicdomain/zero/1.0/","type":"research_data","ddc":["530"],"day":"01","date_published":"2020-05-01T00:00:00Z","project":[{"name":"TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS","grant_number":"862046","call_identifier":"H2020","_id":"237E5020-32DE-11EA-91FC-C7463DDC885E"},{"grant_number":"P32235","name":"Towards scalable hut wire quantum devices","_id":"237B3DA4-32DE-11EA-91FC-C7463DDC885E","call_identifier":"FWF"}],"date_created":"2020-05-01T15:14:46Z","status":"public","publisher":"Institute of Science and Technology Austria","oa_version":"Published Version","ec_funded":1,"article_processing_charge":"No","title":"Supplementary data for \"Zero field splitting of heavy-hole states in quantum dots\"","year":"2020","contributor":[{"contributor_type":"contact_person","first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"}],"author":[{"full_name":"Katsaros, Georgios","first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","orcid":"0000-0001-8342-202X"}],"department":[{"_id":"GeKa"}],"month":"05","_id":"7689","abstract":[{"text":"These are the supplementary research data to the publication \"Zero field splitting of heavy-hole states in quantum dots\". All matrix files have the same format. Within each column the bias voltage is changed. Each column corresponds to either a different gate voltage or magnetic field. The voltage values are given in mV, the current values in pA. Find a specific description in the included Readme file.\r\n","lang":"eng"}],"file":[{"file_id":"7786","content_type":"application/x-zip-compressed","file_size":5514403,"date_created":"2020-05-01T15:13:28Z","creator":"gkatsaro","checksum":"d23c0cb9e2d19e14e2f902b88b97c05d","file_name":"DOI_ZeroFieldSplitting.zip","relation":"main_file","date_updated":"2020-07-14T12:48:02Z","access_level":"open_access"}],"oa":1,"corr_author":"1","date_updated":"2025-04-15T08:39:16Z","related_material":{"record":[{"status":"public","id":"8203","relation":"used_in_publication"}]},"tmp":{"legal_code_url":"https://creativecommons.org/publicdomain/zero/1.0/legalcode","short":"CC0 (1.0)","name":"Creative Commons Public Domain Dedication (CC0 1.0)","image":"/images/cc_0.png"},"doi":"10.15479/AT:ISTA:7689","has_accepted_license":"1","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","citation":{"short":"G. Katsaros, (2020).","ama":"Katsaros G. Supplementary data for “Zero field splitting of heavy-hole states in quantum dots.” 2020. doi:<a href=\"https://doi.org/10.15479/AT:ISTA:7689\">10.15479/AT:ISTA:7689</a>","apa":"Katsaros, G. (2020). Supplementary data for “Zero field splitting of heavy-hole states in quantum dots.” Institute of Science and Technology Austria. <a href=\"https://doi.org/10.15479/AT:ISTA:7689\">https://doi.org/10.15479/AT:ISTA:7689</a>","ista":"Katsaros G. 2020. Supplementary data for ‘Zero field splitting of heavy-hole states in quantum dots’, Institute of Science and Technology Austria, <a href=\"https://doi.org/10.15479/AT:ISTA:7689\">10.15479/AT:ISTA:7689</a>.","mla":"Katsaros, Georgios. <i>Supplementary Data for “Zero Field Splitting of Heavy-Hole States in Quantum Dots.”</i> Institute of Science and Technology Austria, 2020, doi:<a href=\"https://doi.org/10.15479/AT:ISTA:7689\">10.15479/AT:ISTA:7689</a>.","chicago":"Katsaros, Georgios. “Supplementary Data for ‘Zero Field Splitting of Heavy-Hole States in Quantum Dots.’” Institute of Science and Technology Austria, 2020. <a href=\"https://doi.org/10.15479/AT:ISTA:7689\">https://doi.org/10.15479/AT:ISTA:7689</a>.","ieee":"G. Katsaros, “Supplementary data for ‘Zero field splitting of heavy-hole states in quantum dots.’” Institute of Science and Technology Austria, 2020."},"file_date_updated":"2020-07-14T12:48:02Z"},{"external_id":{"pmid":["32479090"],"isi":["000548893200066"]},"related_material":{"record":[{"id":"7689","relation":"research_data","status":"public"}]},"date_updated":"2025-04-15T08:39:16Z","oa":1,"corr_author":"1","_id":"8203","abstract":[{"lang":"eng","text":"Using inelastic cotunneling spectroscopy we observe a zero field splitting within the spin triplet manifold of Ge hut wire quantum dots. The states with spin ±1 in the confinement direction are energetically favored by up to 55 μeV compared to the spin 0 triplet state because of the strong spin–orbit coupling. The reported effect should be observable in a broad class of strongly confined hole quantum-dot systems and might need to be considered when operating hole spin qubits."}],"intvolume":"        20","file":[{"file_id":"8204","content_type":"application/pdf","success":1,"date_created":"2020-08-06T09:35:37Z","file_size":3308906,"creator":"dernst","file_name":"2020_NanoLetters_Katsaros.pdf","relation":"main_file","access_level":"open_access","date_updated":"2020-08-06T09:35:37Z"}],"article_type":"original","month":"06","volume":20,"department":[{"_id":"GeKa"}],"publication":"Nano Letters","citation":{"ista":"Katsaros G, Kukucka J, Vukušić L, Watzinger H, Gao F, Wang T, Zhang J-J, Held K. 2020. Zero field splitting of heavy-hole states in quantum dots. Nano Letters. 20(7), 5201–5206.","apa":"Katsaros, G., Kukucka, J., Vukušić, L., Watzinger, H., Gao, F., Wang, T., … Held, K. (2020). Zero field splitting of heavy-hole states in quantum dots. <i>Nano Letters</i>. American Chemical Society. <a href=\"https://doi.org/10.1021/acs.nanolett.0c01466\">https://doi.org/10.1021/acs.nanolett.0c01466</a>","mla":"Katsaros, Georgios, et al. “Zero Field Splitting of Heavy-Hole States in Quantum Dots.” <i>Nano Letters</i>, vol. 20, no. 7, American Chemical Society, 2020, pp. 5201–06, doi:<a href=\"https://doi.org/10.1021/acs.nanolett.0c01466\">10.1021/acs.nanolett.0c01466</a>.","chicago":"Katsaros, Georgios, Josip Kukucka, Lada Vukušić, Hannes Watzinger, Fei Gao, Ting Wang, Jian-Jun Zhang, and Karsten Held. “Zero Field Splitting of Heavy-Hole States in Quantum Dots.” <i>Nano Letters</i>. American Chemical Society, 2020. <a href=\"https://doi.org/10.1021/acs.nanolett.0c01466\">https://doi.org/10.1021/acs.nanolett.0c01466</a>.","ieee":"G. Katsaros <i>et al.</i>, “Zero field splitting of heavy-hole states in quantum dots,” <i>Nano Letters</i>, vol. 20, no. 7. American Chemical Society, pp. 5201–5206, 2020.","short":"G. Katsaros, J. Kukucka, L. Vukušić, H. Watzinger, F. Gao, T. Wang, J.-J. Zhang, K. Held, Nano Letters 20 (2020) 5201–5206.","ama":"Katsaros G, Kukucka J, Vukušić L, et al. Zero field splitting of heavy-hole states in quantum dots. <i>Nano Letters</i>. 2020;20(7):5201-5206. doi:<a href=\"https://doi.org/10.1021/acs.nanolett.0c01466\">10.1021/acs.nanolett.0c01466</a>"},"file_date_updated":"2020-08-06T09:35:37Z","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","quality_controlled":"1","doi":"10.1021/acs.nanolett.0c01466","has_accepted_license":"1","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)"},"publication_identifier":{"issn":["1530-6984"],"eissn":["1530-6992"]},"acknowledged_ssus":[{"_id":"NanoFab"},{"_id":"M-Shop"}],"date_published":"2020-06-01T00:00:00Z","issue":"7","type":"journal_article","day":"01","ddc":["530"],"page":"5201-5206","language":[{"iso":"eng"}],"isi":1,"scopus_import":"1","year":"2020","author":[{"first_name":"Georgios","full_name":"Katsaros, Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","orcid":"0000-0001-8342-202X"},{"full_name":"Kukucka, Josip","first_name":"Josip","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","last_name":"Kukucka"},{"orcid":"0000-0003-2424-8636","full_name":"Vukušić, Lada","first_name":"Lada","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","last_name":"Vukušić"},{"full_name":"Watzinger, Hannes","first_name":"Hannes","last_name":"Watzinger","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87"},{"last_name":"Gao","full_name":"Gao, Fei","first_name":"Fei"},{"last_name":"Wang","first_name":"Ting","full_name":"Wang, Ting","orcid":"0000-0002-4619-9575"},{"last_name":"Zhang","first_name":"Jian-Jun","full_name":"Zhang, Jian-Jun"},{"last_name":"Held","first_name":"Karsten","full_name":"Held, Karsten"}],"pmid":1,"ec_funded":1,"oa_version":"Published Version","title":"Zero field splitting of heavy-hole states in quantum dots","article_processing_charge":"Yes (via OA deal)","publication_status":"published","publisher":"American Chemical Society","date_created":"2020-08-06T09:25:04Z","status":"public","acknowledgement":"We acknowledge G. Burkard, V. N. Golovach, C. Kloeffel, D.Loss, P. Rabl, and M. Rancič ́ for helpful discussions. We\r\nfurther acknowledge T. Adletzberger, J. Aguilera, T. Asenov, S. Bagiante, T. Menner, L. Shafeek, P. Taus, P. Traunmüller, and D. Waldhausl for their invaluable assistance. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility, by the FWF-P 32235 project, by the National Key R&D Program of China (2016YFA0301701, 2016YFA0300600), and by the European Union’s Horizon 2020 research and innovation program under grant agreement no. 862046. All data of this publication are available at 10.15479/AT:ISTA:7689.","project":[{"grant_number":"P32235","name":"Towards scalable hut wire quantum devices","_id":"237B3DA4-32DE-11EA-91FC-C7463DDC885E","call_identifier":"FWF"},{"call_identifier":"H2020","_id":"237E5020-32DE-11EA-91FC-C7463DDC885E","grant_number":"862046","name":"TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS"}]},{"_id":"8834","type":"research_data","abstract":[{"lang":"eng","text":"This data collection contains the transport data for figures presented in the supplementary material of \"Enhancement of Proximity Induced Superconductivity in Planar Germanium\" by K. Aggarwal, et. al. \r\nThe measurements were done using Labber Software and the data is stored in the hdf5 file format. The files can be opened using either the Labber Log Browser (https://labber.org/overview/) or Labber Python API 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Institute of Science and Technology Austria. <a href=\"https://doi.org/10.15479/AT:ISTA:8834\">https://doi.org/10.15479/AT:ISTA:8834</a>","mla":"Katsaros, Georgios. <i>Enhancement of Proximity Induced Superconductivity in Planar Germanium</i>. Institute of Science and Technology Austria, 2020, doi:<a href=\"https://doi.org/10.15479/AT:ISTA:8834\">10.15479/AT:ISTA:8834</a>."},"file_date_updated":"2020-12-02T10:46:27Z","year":"2020","author":[{"orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios","full_name":"Katsaros, Georgios"}],"user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","oa_version":"Published Version","article_processing_charge":"No","title":"Enhancement of proximity induced superconductivity in planar Germanium"},{"user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","year":"2020","citation":{"ieee":"G. Katsaros, “Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling.” Institute of Science and Technology Austria, 2020.","chicago":"Katsaros, Georgios. “Transport Data for: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling.” Institute of Science and Technology Austria, 2020. <a href=\"https://doi.org/10.15479/AT:ISTA:9222\">https://doi.org/10.15479/AT:ISTA:9222</a>.","mla":"Katsaros, Georgios. <i>Transport Data for: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling</i>. Institute of Science and Technology Austria, 2020, doi:<a href=\"https://doi.org/10.15479/AT:ISTA:9222\">10.15479/AT:ISTA:9222</a>.","ista":"Katsaros G. 2020. Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling, Institute of Science and Technology Austria, <a href=\"https://doi.org/10.15479/AT:ISTA:9222\">10.15479/AT:ISTA:9222</a>.","apa":"Katsaros, G. (2020). Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling. Institute of Science and Technology Austria. <a href=\"https://doi.org/10.15479/AT:ISTA:9222\">https://doi.org/10.15479/AT:ISTA:9222</a>","ama":"Katsaros G. Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling. 2020. doi:<a href=\"https://doi.org/10.15479/AT:ISTA:9222\">10.15479/AT:ISTA:9222</a>","short":"G. 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Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. <i>Advanced Materials</i>. 2020;32(16). doi:<a href=\"https://doi.org/10.1002/adma.201906523\">10.1002/adma.201906523</a>","short":"F. Gao, J.-H. Wang, H. Watzinger, H. Hu, M.J. Rančić, J.-Y. Zhang, T. Wang, Y. Yao, G.-L. Wang, J. Kukucka, L. Vukušić, C. Kloeffel, D. Loss, F. Liu, G. Katsaros, J.-J. Zhang, Advanced Materials 32 (2020).","ieee":"F. Gao <i>et al.</i>, “Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling,” <i>Advanced Materials</i>, vol. 32, no. 16. Wiley, 2020.","apa":"Gao, F., Wang, J.-H., Watzinger, H., Hu, H., Rančić, M. J., Zhang, J.-Y., … Zhang, J.-J. (2020). Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. <i>Advanced Materials</i>. Wiley. <a href=\"https://doi.org/10.1002/adma.201906523\">https://doi.org/10.1002/adma.201906523</a>","mla":"Gao, Fei, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling.” <i>Advanced Materials</i>, vol. 32, no. 16, 1906523, Wiley, 2020, doi:<a href=\"https://doi.org/10.1002/adma.201906523\">10.1002/adma.201906523</a>.","ista":"Gao F, Wang J-H, Watzinger H, Hu H, Rančić MJ, Zhang J-Y, Wang T, Yao Y, Wang G-L, Kukucka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang J-J. 2020. Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. Advanced Materials. 32(16), 1906523.","chicago":"Gao, Fei, Jian-Huan Wang, Hannes Watzinger, Hao Hu, Marko J. Rančić, Jie-Yin Zhang, Ting Wang, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling.” <i>Advanced Materials</i>. Wiley, 2020. <a href=\"https://doi.org/10.1002/adma.201906523\">https://doi.org/10.1002/adma.201906523</a>."},"article_number":"1906523","quality_controlled":"1","month":"04","article_type":"original","_id":"7541","intvolume":"        32","abstract":[{"lang":"eng","text":"Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain‐relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin–orbit coupling, with a spin–orbit length similar to that of III–V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon."}],"file":[{"creator":"dernst","checksum":"c622737dc295972065782558337124a2","file_id":"8782","file_size":5242880,"success":1,"date_created":"2020-11-20T10:11:35Z","content_type":"application/pdf","relation":"main_file","access_level":"open_access","date_updated":"2020-11-20T10:11:35Z","file_name":"2020_AdvancedMaterials_Gao.pdf"}],"department":[{"_id":"GeKa"}],"publication":"Advanced Materials","volume":32,"external_id":{"isi":["000516660900001"],"pmid":["32105375"]},"related_material":{"record":[{"status":"public","id":"17444","relation":"other"},{"relation":"research_data","id":"9222","status":"public"},{"status":"public","relation":"dissertation_contains","id":"7996"}]},"date_updated":"2026-04-08T07:27:13Z","corr_author":"1","oa":1,"publisher":"Wiley","publication_status":"published","project":[{"grant_number":"335497","name":"Towards Spin qubits and Majorana fermions in Germanium self assembled hut-wires","call_identifier":"FP7","_id":"25517E86-B435-11E9-9278-68D0E5697425"},{"grant_number":"P32235","name":"Towards scalable hut wire quantum devices","call_identifier":"FWF","_id":"237B3DA4-32DE-11EA-91FC-C7463DDC885E"},{"call_identifier":"H2020","_id":"237E5020-32DE-11EA-91FC-C7463DDC885E","name":"TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS","grant_number":"862046"}],"date_created":"2020-02-28T09:47:00Z","status":"public","acknowledgement":"This work was supported by the National Key R&D Program of China (Grant Nos. 2016YFA0301701 and 2016YFA0300600), the NSFC (Grant Nos. 11574356, 11434010, and 11404252), the Strategic Priority Research Program of CAS (Grant No. XDB30000000), the ERC Starting Grant No. 335497, the FWF P32235 project, and the European Union's Horizon 2020 research and innovation program under Grant Agreement #862046. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility. F.L. thanks support from DOE (Grant No. DE‐FG02‐04ER46148). H.H. thanks the Startup Funding from Xi'an Jiaotong University.","year":"2020","author":[{"first_name":"Fei","full_name":"Gao, Fei","last_name":"Gao"},{"full_name":"Wang, Jian-Huan","first_name":"Jian-Huan","last_name":"Wang"},{"id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","last_name":"Watzinger","first_name":"Hannes","full_name":"Watzinger, Hannes"},{"first_name":"Hao","full_name":"Hu, Hao","last_name":"Hu"},{"first_name":"Marko J.","full_name":"Rančić, Marko J.","last_name":"Rančić"},{"last_name":"Zhang","full_name":"Zhang, Jie-Yin","first_name":"Jie-Yin"},{"last_name":"Wang","first_name":"Ting","full_name":"Wang, Ting"},{"first_name":"Yuan","full_name":"Yao, Yuan","last_name":"Yao"},{"last_name":"Wang","first_name":"Gui-Lei","full_name":"Wang, Gui-Lei"},{"full_name":"Kukucka, Josip","first_name":"Josip","last_name":"Kukucka","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Vukušić, Lada","first_name":"Lada","last_name":"Vukušić","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0003-2424-8636"},{"last_name":"Kloeffel","first_name":"Christoph","full_name":"Kloeffel, Christoph"},{"last_name":"Loss","first_name":"Daniel","full_name":"Loss, Daniel"},{"first_name":"Feng","full_name":"Liu, Feng","last_name":"Liu"},{"first_name":"Georgios","full_name":"Katsaros, Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","orcid":"0000-0001-8342-202X"},{"last_name":"Zhang","first_name":"Jian-Jun","full_name":"Zhang, Jian-Jun"}],"ec_funded":1,"oa_version":"Published Version","title":"Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling","article_processing_charge":"Yes (via OA deal)","pmid":1,"type":"journal_article","day":"23","ddc":["530"],"scopus_import":"1","language":[{"iso":"eng"}],"isi":1,"date_published":"2020-04-23T00:00:00Z","issue":"16"},{"article_processing_charge":"No","title":"Implementation of a hole spin qubit in Ge hut wires and dispersive spin sensing","oa_version":"Published Version","OA_place":"publisher","author":[{"last_name":"Kukucka","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","full_name":"Kukucka, Josip","first_name":"Josip"}],"year":"2020","status":"public","date_created":"2020-06-22T09:22:23Z","publisher":"Institute of Science and Technology Austria","publication_status":"published","date_published":"2020-06-22T00:00:00Z","language":[{"iso":"eng"}],"ddc":["530"],"day":"22","page":"178","type":"dissertation","degree_awarded":"PhD","user_id":"ba8df636-2132-11f1-aed0-ed93e2281fdd","file_date_updated":"2020-07-14T12:48:07Z","citation":{"chicago":"Kukucka, Josip. “Implementation of a Hole Spin Qubit in Ge Hut Wires and Dispersive Spin Sensing.” Institute of Science and Technology Austria, 2020. <a href=\"https://doi.org/10.15479/AT:ISTA:7996\">https://doi.org/10.15479/AT:ISTA:7996</a>.","mla":"Kukucka, Josip. <i>Implementation of a Hole Spin Qubit in Ge Hut Wires and Dispersive Spin Sensing</i>. Institute of Science and Technology Austria, 2020, doi:<a href=\"https://doi.org/10.15479/AT:ISTA:7996\">10.15479/AT:ISTA:7996</a>.","apa":"Kukucka, J. (2020). <i>Implementation of a hole spin qubit in Ge hut wires and dispersive spin sensing</i>. Institute of Science and Technology Austria. <a href=\"https://doi.org/10.15479/AT:ISTA:7996\">https://doi.org/10.15479/AT:ISTA:7996</a>","ista":"Kukucka J. 2020. Implementation of a hole spin qubit in Ge hut wires and dispersive spin sensing. Institute of Science and Technology Austria.","ieee":"J. Kukucka, “Implementation of a hole spin qubit in Ge hut wires and dispersive spin sensing,” Institute of Science and Technology Austria, 2020.","short":"J. Kukucka, Implementation of a Hole Spin Qubit in Ge Hut Wires and Dispersive Spin Sensing, Institute of Science and Technology Austria, 2020.","ama":"Kukucka J. Implementation of a hole spin qubit in Ge hut wires and dispersive spin sensing. 2020. doi:<a href=\"https://doi.org/10.15479/AT:ISTA:7996\">10.15479/AT:ISTA:7996</a>"},"publication_identifier":{"issn":["2663-337X"]},"has_accepted_license":"1","doi":"10.15479/AT:ISTA:7996","oa":1,"corr_author":"1","date_updated":"2026-04-08T07:27:13Z","related_material":{"record":[{"id":"77","relation":"part_of_dissertation","status":"public"},{"status":"public","id":"7541","relation":"part_of_dissertation"},{"status":"public","id":"23","relation":"part_of_dissertation"},{"id":"840","relation":"part_of_dissertation","status":"public"},{"status":"public","relation":"part_of_dissertation","id":"1328"}]},"alternative_title":["ISTA Thesis"],"supervisor":[{"last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Katsaros, Georgios","first_name":"Georgios","orcid":"0000-0001-8342-202X"}],"department":[{"_id":"GeKa"}],"month":"06","file":[{"relation":"main_file","date_updated":"2020-07-14T12:48:07Z","access_level":"closed","file_name":"JK_thesis_latex_source_files.zip","creator":"dernst","checksum":"467e52feb3e361ce8cf5fe8d5c254ece","file_id":"7997","file_size":392794743,"date_created":"2020-06-22T09:22:04Z","content_type":"application/x-zip-compressed"},{"date_updated":"2020-07-14T12:48:07Z","access_level":"open_access","relation":"main_file","file_name":"PhD_thesis_JK_pdfa.pdf","checksum":"1de716bf110dbd77d383e479232bf496","creator":"dernst","content_type":"application/pdf","date_created":"2020-06-22T09:21:29Z","file_size":28453247,"file_id":"7998"}],"abstract":[{"lang":"eng","text":"Quantum computation enables the execution of algorithms that have exponential complexity. This might open the path towards the synthesis of new materials or medical drugs, optimization of transport or financial strategies etc., intractable on even the fastest classical computers. A quantum computer consists of interconnected two level quantum systems, called qubits, that satisfy DiVincezo’s criteria. Worldwide, there are ongoing efforts to find the qubit architecture which will unite quantum error correction compatible single and two qubit fidelities, long distance qubit to qubit coupling and \r\n calability. Superconducting qubits have gone the furthest in this race, demonstrating an algorithm running on 53 coupled qubits, but still the fidelities are not even close to those required for realizing a single logical qubit.  emiconductor qubits offer extremely good characteristics, but they are currently investigated across different platforms. Uniting those good characteristics into a single platform might be a big step towards the quantum computer realization.\r\nHere we describe the implementation of a hole spin qubit hosted in a Ge hut wire double quantum dot. The high and tunable spin-orbit coupling together with a heavy hole state character is expected to allow fast spin manipulation and long coherence times. Furthermore large lever arms, for hut wire devices, should allow good coupling to superconducting resonators enabling efficient long distance spin to spin coupling and a sensitive gate reflectometry spin readout. The developed cryogenic setup (printed circuit board sample holders, filtering, high-frequency wiring) enabled us to perform low temperature spin dynamics experiments. Indeed, we measured the fastest single spin qubit Rabi frequencies reported so far, reaching 140 MHz, while the dephasing times of 130 ns oppose the long decoherence predictions. In order to further investigate this, a double quantum dot gate was connected directly to a lumped element\r\nresonator which enabled gate reflectometry readout. The vanishing inter-dot transition signal, for increasing external magnetic field, revealed the spin nature of the measured quantity."}],"_id":"7996"},{"doi":"10.48550/arXiv.2012.00322","has_accepted_license":"1","acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"citation":{"ama":"Aggarwal K, Hofmann AC, Jirovec D, et al. Enhancement of proximity induced superconductivity in planar Germanium. <i>arXiv</i>. doi:<a href=\"https://doi.org/10.48550/arXiv.2012.00322\">10.48550/arXiv.2012.00322</a>","short":"K. Aggarwal, A.C. Hofmann, D. Jirovec, I. Prieto Gonzalez, A. Sammak, M. Botifoll, S. Marti-Sanchez, M. Veldhorst, J. Arbiol, G. Scappucci, G. Katsaros, ArXiv (n.d.).","ieee":"K. Aggarwal <i>et al.</i>, “Enhancement of proximity induced superconductivity in planar Germanium,” <i>arXiv</i>. .","chicago":"Aggarwal, Kushagra, Andrea C Hofmann, Daniel Jirovec, Ivan Prieto Gonzalez, Amir Sammak, Marc Botifoll, Sara Marti-Sanchez, et al. “Enhancement of Proximity Induced Superconductivity in Planar Germanium.” <i>ArXiv</i>, n.d. <a href=\"https://doi.org/10.48550/arXiv.2012.00322\">https://doi.org/10.48550/arXiv.2012.00322</a>.","ista":"Aggarwal K, Hofmann AC, Jirovec D, Prieto Gonzalez I, Sammak A, Botifoll M, Marti-Sanchez S, Veldhorst M, Arbiol J, Scappucci G, Katsaros G. Enhancement of proximity induced superconductivity in planar Germanium. arXiv, 2012.00322.","mla":"Aggarwal, Kushagra, et al. “Enhancement of Proximity Induced Superconductivity in Planar Germanium.” <i>ArXiv</i>, 2012.00322, doi:<a href=\"https://doi.org/10.48550/arXiv.2012.00322\">10.48550/arXiv.2012.00322</a>.","apa":"Aggarwal, K., Hofmann, A. C., Jirovec, D., Prieto Gonzalez, I., Sammak, A., Botifoll, M., … Katsaros, G. (n.d.). Enhancement of proximity induced superconductivity in planar Germanium. <i>arXiv</i>. <a href=\"https://doi.org/10.48550/arXiv.2012.00322\">https://doi.org/10.48550/arXiv.2012.00322</a>"},"file_date_updated":"2020-12-02T10:42:31Z","article_number":"2012.00322","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","abstract":[{"lang":"eng","text":"Holes in planar Ge have high mobilities, strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising candidate for hybrid superconductorsemiconductor devices. This is further motivated by the observation of supercurrent transport in planar Ge Josephson Field effect transistors (JoFETs). A key challenge towards hybrid germanium quantum technology is the design of high quality interfaces and superconducting contacts that are robust against magnetic fields. By combining the assets of Al, which has a long superconducting coherence, and Nb, which has a significant superconducting gap, we form low-disordered JoFETs with large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip."}],"_id":"8831","file":[{"date_updated":"2020-12-02T10:42:31Z","access_level":"open_access","relation":"main_file","file_name":"Superconducting_2D_Ge.pdf","checksum":"22a612e206232fa94b138b2c2f957582","creator":"gkatsaro","file_size":1697939,"date_created":"2020-12-02T10:42:31Z","content_type":"application/pdf","file_id":"8832"}],"month":"12","department":[{"_id":"GeKa"}],"publication":"arXiv","external_id":{"arxiv":["2012.00322"]},"date_updated":"2026-05-20T22:30:49Z","related_material":{"record":[{"relation":"later_version","id":"10559","status":"public"},{"status":"public","id":"8834","relation":"research_data"},{"id":"10058","relation":"dissertation_contains","status":"public"}]},"corr_author":"1","oa":1,"publication_status":"draft","date_created":"2020-12-02T10:42:53Z","status":"public","acknowledgement":"This research and related results were made possible with the support of the NOMIS Foundation. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility, the European Union’s Horizon 2020 research and innovation program under the Marie Sklodowska-Curie grant agreement #844511 and the Grant Agreement #862046. ICN2 acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported by the Severo Ochoa\r\nprogram from Spanish MINECO (Grant No. SEV2017-0706) and is funded by the CERCA Programme / Generalitat de Catalunya. Part of the present work has been performed in the framework of Universitat Aut`onoma de Barcelona Materials Science PhD program. The HAADF-STEM microscopy was conducted in the Laboratorio de Microscopias Avanzadas at Instituto de Nanociencia de Aragon-Universidad de Zaragoza. Authors acknowledge the LMA-INA for offering access to their instruments and expertise. We acknowledge support from CSIC Research Platform on Quantum Technologies PTI-001. This project has received funding from\r\nthe European Union’s Horizon 2020 research and innovation programme under grant agreement No 823717 – ESTEEM3. M.B. acknowledges support from SUR Generalitat de Catalunya and the EU Social Fund; project ref. 2020 FI 00103. GS and MV acknowledge support through a projectruimte grant associated with the Netherlands Organization of Scientific Research (NWO).","project":[{"name":"Hybrid Semiconductor - Superconductor Quantum Devices","_id":"262116AA-B435-11E9-9278-68D0E5697425"},{"call_identifier":"H2020","_id":"26A151DA-B435-11E9-9278-68D0E5697425","name":"Majorana bound states in Ge/SiGe heterostructures","grant_number":"844511"},{"grant_number":"862046","name":"TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS","call_identifier":"H2020","_id":"237E5020-32DE-11EA-91FC-C7463DDC885E"}],"year":"2020","author":[{"orcid":"0000-0001-9985-9293","first_name":"Kushagra","full_name":"Aggarwal, Kushagra","id":"b22ab905-3539-11eb-84c3-fc159dcd79cb","last_name":"Aggarwal"},{"last_name":"Hofmann","id":"340F461A-F248-11E8-B48F-1D18A9856A87","full_name":"Hofmann, Andrea C","first_name":"Andrea C"},{"first_name":"Daniel","full_name":"Jirovec, Daniel","last_name":"Jirovec","id":"4C473F58-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-7197-4801"},{"first_name":"Ivan","full_name":"Prieto Gonzalez, Ivan","last_name":"Prieto Gonzalez","id":"2A307FE2-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-7370-5357"},{"last_name":"Sammak","full_name":"Sammak, Amir","first_name":"Amir"},{"last_name":"Botifoll","full_name":"Botifoll, Marc","first_name":"Marc"},{"full_name":"Marti-Sanchez, Sara","first_name":"Sara","last_name":"Marti-Sanchez"},{"full_name":"Veldhorst, Menno","first_name":"Menno","last_name":"Veldhorst"},{"last_name":"Arbiol","full_name":"Arbiol, Jordi","first_name":"Jordi"},{"full_name":"Scappucci, Giordano","first_name":"Giordano","last_name":"Scappucci"},{"full_name":"Katsaros, Georgios","first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X"}],"arxiv":1,"oa_version":"Submitted Version","ec_funded":1,"article_processing_charge":"No","title":"Enhancement of proximity induced superconductivity in planar Germanium","type":"preprint","day":"02","ddc":["530"],"language":[{"iso":"eng"}],"date_published":"2020-12-02T00:00:00Z"},{"corr_author":"1","oa":1,"related_material":{"record":[{"id":"10058","relation":"dissertation_contains","status":"public"}]},"date_updated":"2026-05-20T22:30:49Z","external_id":{"arxiv":["1910.05841"]},"publication":"arXiv","department":[{"_id":"GeKa"}],"month":"10","abstract":[{"text":"We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In conclusion, Ge/SiGe possesses all ingredients necessary for building a singlet-triplet qubit.","lang":"eng"}],"_id":"10065","main_file_link":[{"url":"https://arxiv.org/abs/1910.05841","open_access":"1"}],"user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","article_number":"1910.05841","citation":{"short":"A.C. Hofmann, D. Jirovec, M. Borovkov, I. Prieto Gonzalez, A. Ballabio, J. Frigerio, D. Chrastina, G. Isella, G. Katsaros, ArXiv (n.d.).","ama":"Hofmann AC, Jirovec D, Borovkov M, et al. Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits. <i>arXiv</i>. doi:<a href=\"https://doi.org/10.48550/arXiv.1910.05841\">10.48550/arXiv.1910.05841</a>","chicago":"Hofmann, Andrea C, Daniel Jirovec, Maxim Borovkov, Ivan Prieto Gonzalez, Andrea Ballabio, Jacopo Frigerio, Daniel Chrastina, Giovanni Isella, and Georgios Katsaros. “Assessing the Potential of Ge/SiGe Quantum Dots as Hosts for Singlet-Triplet Qubits.” <i>ArXiv</i>, n.d. <a href=\"https://doi.org/10.48550/arXiv.1910.05841\">https://doi.org/10.48550/arXiv.1910.05841</a>.","apa":"Hofmann, A. C., Jirovec, D., Borovkov, M., Prieto Gonzalez, I., Ballabio, A., Frigerio, J., … Katsaros, G. (n.d.). Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits. <i>arXiv</i>. <a href=\"https://doi.org/10.48550/arXiv.1910.05841\">https://doi.org/10.48550/arXiv.1910.05841</a>","mla":"Hofmann, Andrea C., et al. “Assessing the Potential of Ge/SiGe Quantum Dots as Hosts for Singlet-Triplet Qubits.” <i>ArXiv</i>, 1910.05841, doi:<a href=\"https://doi.org/10.48550/arXiv.1910.05841\">10.48550/arXiv.1910.05841</a>.","ista":"Hofmann AC, Jirovec D, Borovkov M, Prieto Gonzalez I, Ballabio A, Frigerio J, Chrastina D, Isella G, Katsaros G. Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits. arXiv, 1910.05841.","ieee":"A. C. Hofmann <i>et al.</i>, “Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits,” <i>arXiv</i>. ."},"acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"doi":"10.48550/arXiv.1910.05841","date_published":"2019-10-13T00:00:00Z","language":[{"iso":"eng"}],"day":"13","type":"preprint","title":"Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits","article_processing_charge":"No","oa_version":"Preprint","ec_funded":1,"arxiv":1,"author":[{"id":"340F461A-F248-11E8-B48F-1D18A9856A87","last_name":"Hofmann","full_name":"Hofmann, Andrea C","first_name":"Andrea C"},{"first_name":"Daniel","full_name":"Jirovec, Daniel","last_name":"Jirovec","id":"4C473F58-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-7197-4801"},{"last_name":"Borovkov","first_name":"Maxim","full_name":"Borovkov, Maxim"},{"full_name":"Prieto Gonzalez, Ivan","first_name":"Ivan","id":"2A307FE2-F248-11E8-B48F-1D18A9856A87","last_name":"Prieto Gonzalez","orcid":"0000-0002-7370-5357"},{"last_name":"Ballabio","full_name":"Ballabio, Andrea","first_name":"Andrea"},{"last_name":"Frigerio","first_name":"Jacopo","full_name":"Frigerio, Jacopo"},{"full_name":"Chrastina, Daniel","first_name":"Daniel","last_name":"Chrastina"},{"first_name":"Giovanni","full_name":"Isella, Giovanni","last_name":"Isella"},{"orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios","full_name":"Katsaros, Georgios"}],"year":"2019","project":[{"_id":"26A151DA-B435-11E9-9278-68D0E5697425","call_identifier":"H2020","grant_number":"844511","name":"Majorana bound states in Ge/SiGe heterostructures"},{"name":"Hole spin orbit qubits in Ge quantum wells","grant_number":"P30207","_id":"2641CE5E-B435-11E9-9278-68D0E5697425","call_identifier":"FWF"}],"acknowledgement":"We thank Matthias Brauns for helpful discussions and careful proofreading of the manuscript. This project has received funding from the European Union’s Horizon 2020 research and innovation program under the Marie Sklodowska-Curie grant agreement No 844511 and from the FWF project P30207. The research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA machine shop and the nanofabrication\r\nfacility.","status":"public","date_created":"2021-10-01T12:14:51Z","publication_status":"draft"},{"date_updated":"2024-10-09T20:58:34Z","external_id":{"isi":["000429404300013"]},"corr_author":"1","oa":1,"file":[{"file_name":"IST-2018-1016-v1+1_2018_Brauns_Palladium_gates.pdf","relation":"main_file","access_level":"open_access","date_updated":"2020-07-14T12:46:02Z","file_id":"5256","file_size":1850530,"date_created":"2018-12-12T10:17:04Z","content_type":"application/pdf","creator":"system","checksum":"20af238ca4ba6491b77270be8d826bf5"}],"_id":"317","abstract":[{"text":"We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native aluminium oxide is found to be formed all around the aluminium gates, which could lead to the formation of unintentional dots. Therefore, we report on a novel fabrication route that replaces aluminium and its native oxide by palladium with atomic-layer-deposition-grown aluminium oxide. Using this approach, we show the formation of low-disorder gate-defined quantum dots, which are reproducibly fabricated. Furthermore, palladium enables us to further shrink the gate design, allowing us to perform electron transport measurements in the few-electron regime in devices comprising only two gate layers, a major technological advancement. It remains to be seen, whether the introduction of palladium gates can improve the excellent results on electron and nuclear spin qubits defined with an aluminium gate stack.","lang":"eng"}],"intvolume":"         8","month":"04","volume":8,"publication":"Scientific Reports","department":[{"_id":"GeKa"}],"article_number":"5690","citation":{"ieee":"M. Brauns, S. Amitonov, P. Spruijtenburg, and F. Zwanenburg, “Palladium gates for reproducible quantum dots in silicon,” <i>Scientific Reports</i>, vol. 8, no. 1. Nature Publishing Group, 2018.","mla":"Brauns, Matthias, et al. “Palladium Gates for Reproducible Quantum Dots in Silicon.” <i>Scientific Reports</i>, vol. 8, no. 1, 5690, Nature Publishing Group, 2018, doi:<a href=\"https://doi.org/10.1038/s41598-018-24004-y\">10.1038/s41598-018-24004-y</a>.","apa":"Brauns, M., Amitonov, S., Spruijtenburg, P., &#38; Zwanenburg, F. (2018). Palladium gates for reproducible quantum dots in silicon. <i>Scientific Reports</i>. Nature Publishing Group. <a href=\"https://doi.org/10.1038/s41598-018-24004-y\">https://doi.org/10.1038/s41598-018-24004-y</a>","ista":"Brauns M, Amitonov S, Spruijtenburg P, Zwanenburg F. 2018. Palladium gates for reproducible quantum dots in silicon. Scientific Reports. 8(1), 5690.","chicago":"Brauns, Matthias, Sergey Amitonov, Paul Spruijtenburg, and Floris Zwanenburg. “Palladium Gates for Reproducible Quantum Dots in Silicon.” <i>Scientific Reports</i>. Nature Publishing Group, 2018. <a href=\"https://doi.org/10.1038/s41598-018-24004-y\">https://doi.org/10.1038/s41598-018-24004-y</a>.","ama":"Brauns M, Amitonov S, Spruijtenburg P, Zwanenburg F. Palladium gates for reproducible quantum dots in silicon. <i>Scientific Reports</i>. 2018;8(1). doi:<a href=\"https://doi.org/10.1038/s41598-018-24004-y\">10.1038/s41598-018-24004-y</a>","short":"M. Brauns, S. Amitonov, P. Spruijtenburg, F. Zwanenburg, Scientific Reports 8 (2018)."},"file_date_updated":"2020-07-14T12:46:02Z","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","quality_controlled":"1","has_accepted_license":"1","doi":"10.1038/s41598-018-24004-y","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)"},"publist_id":"7548","date_published":"2018-04-09T00:00:00Z","pubrep_id":"1016","issue":"1","day":"09","ddc":["539"],"type":"journal_article","isi":1,"language":[{"iso":"eng"}],"scopus_import":"1","author":[{"full_name":"Brauns, Matthias","first_name":"Matthias","id":"33F94E3C-F248-11E8-B48F-1D18A9856A87","last_name":"Brauns"},{"full_name":"Amitonov, Sergey","first_name":"Sergey","last_name":"Amitonov"},{"last_name":"Spruijtenburg","first_name":"Paul","full_name":"Spruijtenburg, Paul"},{"first_name":"Floris","full_name":"Zwanenburg, Floris","last_name":"Zwanenburg"}],"year":"2018","title":"Palladium gates for reproducible quantum dots in silicon","article_processing_charge":"No","oa_version":"Published Version","publication_status":"published","publisher":"Nature Publishing Group","status":"public","date_created":"2018-12-11T11:45:47Z"},{"oa":1,"external_id":{"isi":["000450232800015"],"arxiv":["1809.08487"]},"date_updated":"2023-09-19T14:29:58Z","volume":30,"department":[{"_id":"GeKa"}],"publication":"Advanced Materials","intvolume":"        30","_id":"5990","abstract":[{"text":"A Ge–Si core–shell nanowire is used to realize a Josephson field‐effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single‐particle levels of a strongly coupled quantum dot operating in the few‐hole regime. These results establish Ge–Si nanowires as an important platform for hybrid superconductor–semiconductor physics and Majorana fermions.","lang":"eng"}],"month":"11","quality_controlled":"1","citation":{"ama":"Ridderbos J, Brauns M, Shen J, et al. Josephson effect in a few-hole quantum dot. <i>Advanced Materials</i>. 2018;30(44). doi:<a href=\"https://doi.org/10.1002/adma.201802257\">10.1002/adma.201802257</a>","short":"J. Ridderbos, M. Brauns, J. Shen, F.K. de Vries, A. Li, E.P.A.M. Bakkers, A. Brinkman, F.A. Zwanenburg, Advanced Materials 30 (2018).","ieee":"J. Ridderbos <i>et al.</i>, “Josephson effect in a few-hole quantum dot,” <i>Advanced Materials</i>, vol. 30, no. 44. Wiley, 2018.","ista":"Ridderbos J, Brauns M, Shen J, de Vries FK, Li A, Bakkers EPAM, Brinkman A, Zwanenburg FA. 2018. Josephson effect in a few-hole quantum dot. Advanced Materials. 30(44), 1802257.","mla":"Ridderbos, Joost, et al. “Josephson Effect in a Few-Hole Quantum Dot.” <i>Advanced Materials</i>, vol. 30, no. 44, 1802257, Wiley, 2018, doi:<a href=\"https://doi.org/10.1002/adma.201802257\">10.1002/adma.201802257</a>.","apa":"Ridderbos, J., Brauns, M., Shen, J., de Vries, F. K., Li, A., Bakkers, E. P. A. M., … Zwanenburg, F. A. (2018). Josephson effect in a few-hole quantum dot. <i>Advanced Materials</i>. Wiley. <a href=\"https://doi.org/10.1002/adma.201802257\">https://doi.org/10.1002/adma.201802257</a>","chicago":"Ridderbos, Joost, Matthias Brauns, Jie Shen, Folkert K. de Vries, Ang Li, Erik P. A. M. Bakkers, Alexander Brinkman, and Floris A. Zwanenburg. “Josephson Effect in a Few-Hole Quantum Dot.” <i>Advanced Materials</i>. Wiley, 2018. <a href=\"https://doi.org/10.1002/adma.201802257\">https://doi.org/10.1002/adma.201802257</a>."},"article_number":"1802257","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","main_file_link":[{"open_access":"1","url":"https://arxiv.org/abs/1809.08487"}],"publication_identifier":{"issn":["0935-9648"]},"doi":"10.1002/adma.201802257","issue":"44","date_published":"2018-11-02T00:00:00Z","language":[{"iso":"eng"}],"isi":1,"scopus_import":"1","type":"journal_article","day":"02","arxiv":1,"oa_version":"Preprint","article_processing_charge":"No","title":"Josephson effect in a few-hole quantum dot","year":"2018","author":[{"last_name":"Ridderbos","first_name":"Joost","full_name":"Ridderbos, Joost"},{"id":"33F94E3C-F248-11E8-B48F-1D18A9856A87","last_name":"Brauns","first_name":"Matthias","full_name":"Brauns, Matthias"},{"last_name":"Shen","full_name":"Shen, Jie","first_name":"Jie"},{"last_name":"de Vries","full_name":"de Vries, Folkert K.","first_name":"Folkert K."},{"first_name":"Ang","full_name":"Li, Ang","last_name":"Li"},{"full_name":"Bakkers, Erik P. A. M.","first_name":"Erik P. A. M.","last_name":"Bakkers"},{"full_name":"Brinkman, Alexander","first_name":"Alexander","last_name":"Brinkman"},{"first_name":"Floris A.","full_name":"Zwanenburg, Floris A.","last_name":"Zwanenburg"}],"status":"public","date_created":"2019-02-14T12:14:26Z","publication_status":"published","publisher":"Wiley"},{"date_published":"2018-09-25T00:00:00Z","issue":"3902 ","type":"journal_article","ddc":["530"],"day":"25","scopus_import":"1","language":[{"iso":"eng"}],"isi":1,"year":"2018","author":[{"last_name":"Watzinger","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","full_name":"Watzinger, Hannes","first_name":"Hannes"},{"last_name":"Kukucka","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","full_name":"Kukucka, Josip","first_name":"Josip"},{"orcid":"0000-0003-2424-8636","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","last_name":"Vukusic","full_name":"Vukusic, Lada","first_name":"Lada"},{"last_name":"Gao","first_name":"Fei","full_name":"Gao, Fei"},{"full_name":"Wang, Ting","first_name":"Ting","last_name":"Wang"},{"last_name":"Schäffler","first_name":"Friedrich","full_name":"Schäffler, Friedrich"},{"last_name":"Zhang","first_name":"Jian","full_name":"Zhang, Jian"},{"orcid":"0000-0001-8342-202X","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Katsaros, Georgios","first_name":"Georgios"}],"ec_funded":1,"oa_version":"Published Version","title":"A germanium hole spin qubit","article_processing_charge":"Yes","publisher":"Nature Publishing Group","publication_status":"published","project":[{"grant_number":"335497","name":"Towards Spin qubits and Majorana fermions in Germanium self assembled hut-wires","_id":"25517E86-B435-11E9-9278-68D0E5697425","call_identifier":"FP7"},{"_id":"2552F888-B435-11E9-9278-68D0E5697425","call_identifier":"FWF","name":"Loch Spin-Qubits und Majorana-Fermionen in Germanium","grant_number":"Y00715"}],"date_created":"2018-12-11T11:44:30Z","status":"public","external_id":{"isi":["000445560800010"]},"date_updated":"2026-04-08T07:27:13Z","related_material":{"record":[{"relation":"popular_science","id":"7977"},{"relation":"dissertation_contains","id":"7996","status":"public"}]},"oa":1,"month":"09","article_type":"original","intvolume":"         9","_id":"77","abstract":[{"text":"Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate two-axis control of a spin 3/2 qubit in natural Ge. The qubit is formed in a hut wire double quantum dot device. The Pauli spin blockade principle allowed us to demonstrate electric dipole spin resonance by applying a radio frequency electric field to one of the electrodes defining the double quantum dot. Coherent hole spin oscillations with Rabi frequencies reaching 140 MHz are demonstrated and dephasing times of 130 ns are measured. The reported results emphasize the potential of Ge as a platform for fast and electrically tunable hole spin qubit devices.","lang":"eng"}],"file":[{"access_level":"open_access","date_updated":"2020-07-14T12:48:02Z","relation":"main_file","file_name":"2018_NatureComm_Watzinger.pdf","checksum":"e7148c10a64497e279c4de570b6cc544","creator":"dernst","content_type":"application/pdf","file_size":1063469,"date_created":"2018-12-17T10:28:30Z","file_id":"5687"}],"department":[{"_id":"GeKa"}],"publication":"Nature Communications","volume":9,"user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","citation":{"chicago":"Watzinger, Hannes, Josip Kukucka, Lada Vukušić, Fei Gao, Ting Wang, Friedrich Schäffler, Jian Zhang, and Georgios Katsaros. “A Germanium Hole Spin Qubit.” <i>Nature Communications</i>. Nature Publishing Group, 2018. <a href=\"https://doi.org/10.1038/s41467-018-06418-4\">https://doi.org/10.1038/s41467-018-06418-4</a>.","apa":"Watzinger, H., Kukucka, J., Vukušić, L., Gao, F., Wang, T., Schäffler, F., … Katsaros, G. (2018). A germanium hole spin qubit. <i>Nature Communications</i>. Nature Publishing Group. <a href=\"https://doi.org/10.1038/s41467-018-06418-4\">https://doi.org/10.1038/s41467-018-06418-4</a>","mla":"Watzinger, Hannes, et al. “A Germanium Hole Spin Qubit.” <i>Nature Communications</i>, vol. 9, no. 3902, Nature Publishing Group, 2018, doi:<a href=\"https://doi.org/10.1038/s41467-018-06418-4\">10.1038/s41467-018-06418-4</a>.","ista":"Watzinger H, Kukucka J, Vukušić L, Gao F, Wang T, Schäffler F, Zhang J, Katsaros G. 2018. A germanium hole spin qubit. Nature Communications. 9(3902).","ieee":"H. Watzinger <i>et al.</i>, “A germanium hole spin qubit,” <i>Nature Communications</i>, vol. 9, no. 3902. Nature Publishing Group, 2018.","short":"H. Watzinger, J. Kukucka, L. Vukušić, F. Gao, T. Wang, F. Schäffler, J. Zhang, G. Katsaros, Nature Communications 9 (2018).","ama":"Watzinger H, Kukucka J, Vukušić L, et al. A germanium hole spin qubit. <i>Nature Communications</i>. 2018;9(3902). doi:<a href=\"https://doi.org/10.1038/s41467-018-06418-4\">10.1038/s41467-018-06418-4</a>"},"file_date_updated":"2020-07-14T12:48:02Z","quality_controlled":"1","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)"},"doi":"10.1038/s41467-018-06418-4","has_accepted_license":"1","acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}]},{"status":"public","date_created":"2018-12-11T11:44:21Z","publisher":"Institute of Science and Technology Austria","publication_status":"published","title":"Ge hut wires - from growth to hole spin resonance","article_processing_charge":"No","oa_version":"Published Version","OA_place":"publisher","author":[{"first_name":"Hannes","full_name":"Watzinger, Hannes","last_name":"Watzinger","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87"}],"year":"2018","language":[{"iso":"eng"}],"ddc":["530"],"page":"77","day":"30","type":"dissertation","date_published":"2018-07-30T00:00:00Z","pubrep_id":"1033","publication_identifier":{"issn":["2663-337X"]},"publist_id":"8005","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)"},"has_accepted_license":"1","doi":"10.15479/AT:ISTA:th_1033","degree_awarded":"PhD","user_id":"ba8df636-2132-11f1-aed0-ed93e2281fdd","citation":{"chicago":"Watzinger, Hannes. “Ge Hut Wires - from Growth to Hole Spin Resonance.” Institute of Science and Technology Austria, 2018. <a href=\"https://doi.org/10.15479/AT:ISTA:th_1033\">https://doi.org/10.15479/AT:ISTA:th_1033</a>.","ista":"Watzinger H. 2018. Ge hut wires - from growth to hole spin resonance. Institute of Science and Technology Austria.","mla":"Watzinger, Hannes. <i>Ge Hut Wires - from Growth to Hole Spin Resonance</i>. Institute of Science and Technology Austria, 2018, doi:<a href=\"https://doi.org/10.15479/AT:ISTA:th_1033\">10.15479/AT:ISTA:th_1033</a>.","apa":"Watzinger, H. (2018). <i>Ge hut wires - from growth to hole spin resonance</i>. Institute of Science and Technology Austria. <a href=\"https://doi.org/10.15479/AT:ISTA:th_1033\">https://doi.org/10.15479/AT:ISTA:th_1033</a>","ieee":"H. Watzinger, “Ge hut wires - from growth to hole spin resonance,” Institute of Science and Technology Austria, 2018.","short":"H. Watzinger, Ge Hut Wires - from Growth to Hole Spin Resonance, Institute of Science and Technology Austria, 2018.","ama":"Watzinger H. Ge hut wires - from growth to hole spin resonance. 2018. doi:<a href=\"https://doi.org/10.15479/AT:ISTA:th_1033\">10.15479/AT:ISTA:th_1033</a>"},"file_date_updated":"2020-07-14T12:46:35Z","department":[{"_id":"GeKa"}],"supervisor":[{"orcid":"0000-0001-8342-202X","full_name":"Katsaros, Georgios","first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"}],"month":"07","file":[{"file_name":"2018_Thesis_Watzinger.pdf","relation":"main_file","access_level":"open_access","date_updated":"2020-07-14T12:46:35Z","file_id":"6249","content_type":"application/pdf","date_created":"2019-04-09T07:13:28Z","file_size":85539748,"creator":"dernst","checksum":"b653b5216251f938ddbeafd1de88667c"},{"file_id":"6250","date_created":"2019-04-09T07:13:27Z","file_size":21830697,"content_type":"application/zip","creator":"dernst","checksum":"39bcf8de7ac5b1bb516b11ce2f966785","file_name":"2018_Thesis_Watzinger_source.zip","relation":"source_file","access_level":"closed","date_updated":"2020-07-14T12:46:35Z"}],"abstract":[{"text":"Nowadays, quantum computation is receiving more and more attention as an alternative to the classical way of computing. For realizing a quantum computer, different devices are investigated as potential quantum bits. In this thesis, the focus is on Ge hut wires, which turned out to be promising candidates for implementing hole spin quantum bits. The advantages of Ge as a material system are the low hyperfine interaction for holes and the strong spin orbit coupling, as well as the compatibility with the highly developed CMOS processes in industry. In addition, Ge can also be isotopically purified which is expected to boost the spin coherence times. The strong spin orbit interaction for holes in Ge on the one hand enables the full electrical control of the quantum bit and on the other hand should allow short spin manipulation times. Starting with a bare Si wafer, this work covers the entire process reaching from growth over the fabrication and characterization of hut wire devices up to the demonstration of hole spin resonance. From experiments with single quantum dots, a large g-factor anisotropy between the in-plane and the out-of-plane direction was found. A comparison to a theoretical model unveiled the heavy-hole character of the lowest energy states. The second part of the thesis addresses double quantum dot devices, which were realized by adding two gate electrodes to a hut wire. In such devices, Pauli spin blockade was observed, which can serve as a read-out mechanism for spin quantum bits. Applying oscillating electric fields in spin blockade allowed the demonstration of continuous spin rotations and the extraction of a lower bound for the spin dephasing time. Despite the strong spin orbit coupling in Ge, the obtained value for the dephasing time is comparable to what has been recently reported for holes in Si. All in all, the presented results point out the high potential of Ge hut wires as a platform for long-lived, fast and fully electrically tunable hole spin quantum bits.","lang":"eng"}],"_id":"49","oa":1,"corr_author":"1","date_updated":"2026-04-08T14:02:40Z","alternative_title":["ISTA Thesis"]},{"issue":"11","pubrep_id":"1065","date_published":"2018-10-25T00:00:00Z","isi":1,"language":[{"iso":"eng"}],"scopus_import":"1","ddc":["530"],"day":"25","page":"7141 - 7145","type":"journal_article","pmid":1,"article_processing_charge":"No","title":"Single-shot readout of hole spins in Ge","oa_version":"Published Version","ec_funded":1,"author":[{"orcid":"0000-0003-2424-8636","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","last_name":"Vukušić","full_name":"Vukušić, Lada","first_name":"Lada"},{"first_name":"Josip","full_name":"Kukucka, Josip","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","last_name":"Kukucka"},{"first_name":"Hannes","full_name":"Watzinger, Hannes","last_name":"Watzinger","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Milem, Joshua M","first_name":"Joshua M","last_name":"Milem","id":"4CDE0A96-F248-11E8-B48F-1D18A9856A87"},{"last_name":"Schäffler","first_name":"Friedrich","full_name":"Schäffler, Friedrich"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios","full_name":"Katsaros, Georgios","orcid":"0000-0001-8342-202X"}],"year":"2018","status":"public","date_created":"2018-12-11T11:44:13Z","project":[{"grant_number":"335497","name":"Towards Spin qubits and Majorana fermions in Germanium self assembled hut-wires","call_identifier":"FP7","_id":"25517E86-B435-11E9-9278-68D0E5697425"}],"publication_status":"published","publisher":"American Chemical Society","oa":1,"related_material":{"record":[{"id":"7977","relation":"popular_science"},{"id":"7996","relation":"dissertation_contains","status":"public"},{"status":"public","relation":"dissertation_contains","id":"69"}]},"date_updated":"2026-04-08T14:09:47Z","external_id":{"pmid":["30359041"],"isi":["000451102100064"]},"volume":18,"publication":"Nano Letters","department":[{"_id":"GeKa"}],"file":[{"content_type":"application/pdf","file_size":1361441,"date_created":"2018-12-12T10:16:08Z","file_id":"5194","checksum":"3e6034a94c6b5335e939145d88bdb371","creator":"system","file_name":"IST-2018-1065-v1+1_ACS_nanoletters_8b03217.pdf","date_updated":"2020-07-14T12:45:37Z","access_level":"open_access","relation":"main_file"}],"_id":"23","abstract":[{"lang":"eng","text":"The strong atomistic spin–orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio frequency reflectometry setup, we were able to demonstrate single-shot readout of a germanium quantum dot hole spin and measure the spin lifetime. Hole spin relaxation times of about 90 μs at 500 mT are reported, with a total readout visibility of about 70%. By analyzing separately the spin-to-charge conversion and charge readout fidelities, we have obtained insight into the processes limiting the visibilities of hole spins. The analyses suggest that high hole visibilities are feasible at realistic experimental conditions, underlying the potential of hole spins for the realization of viable qubit devices."}],"intvolume":"        18","month":"10","quality_controlled":"1","citation":{"chicago":"Vukušić, Lada, Josip Kukucka, Hannes Watzinger, Joshua M Milem, Friedrich Schäffler, and Georgios Katsaros. “Single-Shot Readout of Hole Spins in Ge.” <i>Nano Letters</i>. American Chemical Society, 2018. <a href=\"https://doi.org/10.1021/acs.nanolett.8b03217\">https://doi.org/10.1021/acs.nanolett.8b03217</a>.","ista":"Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. 2018. Single-shot readout of hole spins in Ge. Nano Letters. 18(11), 7141–7145.","apa":"Vukušić, L., Kukucka, J., Watzinger, H., Milem, J. M., Schäffler, F., &#38; Katsaros, G. (2018). Single-shot readout of hole spins in Ge. <i>Nano Letters</i>. American Chemical Society. <a href=\"https://doi.org/10.1021/acs.nanolett.8b03217\">https://doi.org/10.1021/acs.nanolett.8b03217</a>","mla":"Vukušić, Lada, et al. “Single-Shot Readout of Hole Spins in Ge.” <i>Nano Letters</i>, vol. 18, no. 11, American Chemical Society, 2018, pp. 7141–45, doi:<a href=\"https://doi.org/10.1021/acs.nanolett.8b03217\">10.1021/acs.nanolett.8b03217</a>.","ieee":"L. Vukušić, J. Kukucka, H. Watzinger, J. M. Milem, F. Schäffler, and G. Katsaros, “Single-shot readout of hole spins in Ge,” <i>Nano Letters</i>, vol. 18, no. 11. American Chemical Society, pp. 7141–7145, 2018.","short":"L. Vukušić, J. Kukucka, H. Watzinger, J.M. Milem, F. Schäffler, G. Katsaros, Nano Letters 18 (2018) 7141–7145.","ama":"Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. Single-shot readout of hole spins in Ge. <i>Nano Letters</i>. 2018;18(11):7141-7145. doi:<a href=\"https://doi.org/10.1021/acs.nanolett.8b03217\">10.1021/acs.nanolett.8b03217</a>"},"file_date_updated":"2020-07-14T12:45:37Z","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","publist_id":"8032","publication_identifier":{"issn":["1530-6984"]},"acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"has_accepted_license":"1","doi":"10.1021/acs.nanolett.8b03217","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)"}},{"tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)"},"doi":"10.15479/AT:ISTA:TH_1047","has_accepted_license":"1","publist_id":"7985","publication_identifier":{"issn":["2663-337X"]},"degree_awarded":"PhD","user_id":"ba8df636-2132-11f1-aed0-ed93e2281fdd","citation":{"ama":"Vukušić L. Charge sensing and spin relaxation times of holes in Ge hut wires. 2018. doi:<a href=\"https://doi.org/10.15479/AT:ISTA:TH_1047\">10.15479/AT:ISTA:TH_1047</a>","short":"L. Vukušić, Charge Sensing and Spin Relaxation Times of Holes in Ge Hut Wires, Institute of Science and Technology Austria, 2018.","ieee":"L. Vukušić, “Charge sensing and spin relaxation times of holes in Ge hut wires,” Institute of Science and Technology Austria, 2018.","ista":"Vukušić L. 2018. Charge sensing and spin relaxation times of holes in Ge hut wires. Institute of Science and Technology Austria.","mla":"Vukušić, Lada. <i>Charge Sensing and Spin Relaxation Times of Holes in Ge Hut Wires</i>. Institute of Science and Technology Austria, 2018, doi:<a href=\"https://doi.org/10.15479/AT:ISTA:TH_1047\">10.15479/AT:ISTA:TH_1047</a>.","apa":"Vukušić, L. (2018). <i>Charge sensing and spin relaxation times of holes in Ge hut wires</i>. Institute of Science and Technology Austria. <a href=\"https://doi.org/10.15479/AT:ISTA:TH_1047\">https://doi.org/10.15479/AT:ISTA:TH_1047</a>","chicago":"Vukušić, Lada. “Charge Sensing and Spin Relaxation Times of Holes in Ge Hut Wires.” Institute of Science and Technology Austria, 2018. <a href=\"https://doi.org/10.15479/AT:ISTA:TH_1047\">https://doi.org/10.15479/AT:ISTA:TH_1047</a>."},"file_date_updated":"2020-07-14T12:47:44Z","month":"09","_id":"69","abstract":[{"lang":"eng","text":"A qubit, a unit of quantum information, is essentially any quantum mechanical two-level system which can be coherently controlled. Still, to be used for computation, it has to fulfill criteria. Qubits, regardless of the system in which they are realized, suffer from decoherence. This leads to loss of the information stored in the qubit. The upper bound of the time scale on which decoherence happens is set by the spin relaxation time. In this thesis I studied a two-level system consisting of a Zeeman-split hole spin confined in a quantum dot formed in a Ge hut wire. Such Ge hut wires have emerged as a promising material system for the realization of spin qubits, due to the combination of two significant properties: long spin coherence time as expected for group IV semiconductors due to the low hyperfine interaction and a strong valence band spin-orbit coupling. Here, I present how to fabricate quantum dot devices suitable for electrical transport measurements. Coupled quantum dot devices allowed the realization of a charge sensor, which is electrostatically and tunnel coupled to a quantum dot. By integrating the charge sensor into a radio-frequency reflectometry setup, I performed for the first time single-shot readout measurements of hole spins and extracted the hole spin relaxation times in Ge hut wires."}],"file":[{"content_type":"application/pdf","file_size":28452385,"date_created":"2019-04-09T07:00:40Z","file_id":"6247","checksum":"c570b656e30749cd65b1c7e13a9ce0a8","creator":"dernst","file_name":"2018_Thesis_Vukusic.pdf","date_updated":"2020-07-14T12:47:44Z","access_level":"open_access","relation":"main_file"},{"relation":"source_file","access_level":"closed","date_updated":"2020-07-14T12:47:44Z","file_name":"2018_Thesis_Vukusic_source.zip","creator":"dernst","checksum":"7856771d9cd401fe0b311191076db6e1","file_id":"6248","content_type":"application/zip","date_created":"2019-04-09T07:00:40Z","file_size":53058704}],"supervisor":[{"last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Katsaros, Georgios","first_name":"Georgios","orcid":"0000-0001-8342-202X"}],"department":[{"_id":"GeKa"},{"_id":"GradSch"}],"related_material":{"record":[{"relation":"part_of_dissertation","id":"23","status":"public"},{"relation":"part_of_dissertation","id":"840","status":"public"}]},"alternative_title":["ISTA Thesis"],"date_updated":"2026-04-08T14:09:47Z","corr_author":"1","oa":1,"publisher":"Institute of Science and Technology Austria","publication_status":"published","date_created":"2018-12-11T11:44:28Z","status":"public","OA_place":"publisher","year":"2018","author":[{"full_name":"Vukušić, Lada","first_name":"Lada","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","last_name":"Vukušić","orcid":"0000-0003-2424-8636"}],"oa_version":"Published Version","article_processing_charge":"No","title":"Charge sensing and spin relaxation times of holes in Ge hut wires","type":"dissertation","ddc":["530","600"],"page":"103","day":"01","language":[{"iso":"eng"}],"pubrep_id":"1047","date_published":"2018-09-01T00:00:00Z"},{"external_id":{"isi":["000451735700054"],"arxiv":["1804.09522"]},"related_material":{"record":[{"id":"10058","relation":"dissertation_contains","status":"public"}]},"date_updated":"2026-05-20T22:30:49Z","oa":1,"abstract":[{"text":"Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and therefore a scalable quantum computer architecture. To solve signal-line bandwidth and fan-out problems, microwave sources required for qubit manipulation might be embedded close to the qubit chip, typically operating at temperatures below 4 K. Here, we perform the first low temperature measurements of a 130 nm BiCMOS based SiGe voltage controlled oscillator at cryogenic temperature. We determined the frequency and output power dependence on temperature and magnetic field up to 5 T and measured the temperature influence on its noise performance. The device maintains its full functionality from 300 K to 4 K. The carrier frequency at 4 K increases by 3% with respect to the carrier frequency at 300 K, and the output power at 4 K increases by 10 dB relative to the output power at 300 K. The frequency tuning range of approximately 20% remains unchanged between 300 K and 4 K. In an in-plane magnetic field of 5 T, the carrier frequency shifts by only 0.02% compared to the frequency at zero magnetic field.","lang":"eng"}],"_id":"5816","intvolume":"        89","month":"11","volume":89,"department":[{"_id":"GeKa"}],"publication":"Review of Scientific Instruments","citation":{"short":"A. Hollmann, D. Jirovec, M. Kucharski, D. Kissinger, G. Fischer, L.R. Schreiber, Review of Scientific Instruments 89 (2018).","ama":"Hollmann A, Jirovec D, Kucharski M, Kissinger D, Fischer G, Schreiber LR. 30 GHz-voltage controlled oscillator operating at 4 K. <i>Review of Scientific Instruments</i>. 2018;89(11). doi:<a href=\"https://doi.org/10.1063/1.5038258\">10.1063/1.5038258</a>","ista":"Hollmann A, Jirovec D, Kucharski M, Kissinger D, Fischer G, Schreiber LR. 2018. 30 GHz-voltage controlled oscillator operating at 4 K. Review of Scientific Instruments. 89(11), 114701.","mla":"Hollmann, Arne, et al. “30 GHz-Voltage Controlled Oscillator Operating at 4 K.” <i>Review of Scientific Instruments</i>, vol. 89, no. 11, 114701, AIP Publishing, 2018, doi:<a href=\"https://doi.org/10.1063/1.5038258\">10.1063/1.5038258</a>.","apa":"Hollmann, A., Jirovec, D., Kucharski, M., Kissinger, D., Fischer, G., &#38; Schreiber, L. R. (2018). 30 GHz-voltage controlled oscillator operating at 4 K. <i>Review of Scientific Instruments</i>. AIP Publishing. <a href=\"https://doi.org/10.1063/1.5038258\">https://doi.org/10.1063/1.5038258</a>","chicago":"Hollmann, Arne, Daniel Jirovec, Maciej Kucharski, Dietmar Kissinger, Gunter Fischer, and Lars R. Schreiber. “30 GHz-Voltage Controlled Oscillator Operating at 4 K.” <i>Review of Scientific Instruments</i>. AIP Publishing, 2018. <a href=\"https://doi.org/10.1063/1.5038258\">https://doi.org/10.1063/1.5038258</a>.","ieee":"A. Hollmann, D. Jirovec, M. Kucharski, D. Kissinger, G. Fischer, and L. R. Schreiber, “30 GHz-voltage controlled oscillator operating at 4 K,” <i>Review of Scientific Instruments</i>, vol. 89, no. 11. AIP Publishing, 2018."},"article_number":"114701","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","main_file_link":[{"open_access":"1","url":"https://arxiv.org/abs/1804.09522"}],"quality_controlled":"1","doi":"10.1063/1.5038258","publication_identifier":{"issn":["0034-6748"]},"date_published":"2018-11-01T00:00:00Z","issue":"11","type":"journal_article","day":"01","language":[{"iso":"eng"}],"isi":1,"scopus_import":"1","year":"2018","author":[{"full_name":"Hollmann, Arne","first_name":"Arne","last_name":"Hollmann"},{"full_name":"Jirovec, Daniel","first_name":"Daniel","last_name":"Jirovec","id":"4C473F58-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-7197-4801"},{"last_name":"Kucharski","full_name":"Kucharski, Maciej","first_name":"Maciej"},{"first_name":"Dietmar","full_name":"Kissinger, Dietmar","last_name":"Kissinger"},{"last_name":"Fischer","full_name":"Fischer, Gunter","first_name":"Gunter"},{"full_name":"Schreiber, Lars R.","first_name":"Lars R.","last_name":"Schreiber"}],"arxiv":1,"oa_version":"Preprint","article_processing_charge":"No","title":"30 GHz-voltage controlled oscillator operating at 4 K","publication_status":"published","publisher":"AIP Publishing","date_created":"2019-01-10T14:22:23Z","status":"public"},{"date_published":"2017-08-10T00:00:00Z","pubrep_id":"865","issue":"9","type":"journal_article","day":"10","page":"5706 - 5710","ddc":["539"],"language":[{"iso":"eng"}],"isi":1,"scopus_import":"1","year":"2017","author":[{"first_name":"Lada","full_name":"Vukusic, Lada","last_name":"Vukusic","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0003-2424-8636"},{"last_name":"Kukucka","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","first_name":"Josip","full_name":"Kukucka, Josip"},{"last_name":"Watzinger","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","first_name":"Hannes","full_name":"Watzinger, Hannes"},{"orcid":"0000-0001-8342-202X","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","first_name":"Georgios","full_name":"Katsaros, Georgios"}],"oa_version":"Published Version","ec_funded":1,"title":"Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry","article_processing_charge":"No","publication_status":"published","publisher":"American Chemical Society","status":"public","date_created":"2018-12-11T11:48:47Z","project":[{"name":"Towards Spin qubits and Majorana fermions in Germanium self assembled hut-wires","grant_number":"335497","call_identifier":"FP7","_id":"25517E86-B435-11E9-9278-68D0E5697425"}],"external_id":{"isi":["000411043500078"]},"related_material":{"record":[{"id":"7977","relation":"popular_science"},{"status":"public","id":"7996","relation":"dissertation_contains"},{"id":"69","relation":"dissertation_contains","status":"public"}]},"date_updated":"2026-04-08T14:09:47Z","corr_author":"1","oa":1,"_id":"840","abstract":[{"text":"Heavy holes confined in quantum dots are predicted to be promising candidates for the realization of spin qubits with long coherence times. Here we focus on such heavy-hole states confined in germanium hut wires. By tuning the growth density of the latter we can realize a T-like structure between two neighboring wires. Such a structure allows the realization of a charge sensor, which is electrostatically and tunnel coupled to a quantum dot, with charge-transfer signals as high as 0.3 e. By integrating the T-like structure into a radiofrequency reflectometry setup, single-shot measurements allowing the extraction of hole tunneling times are performed. The extracted tunneling times of less than 10 μs are attributed to the small effective mass of Ge heavy-hole states and pave the way toward projective spin readout measurements.","lang":"eng"}],"intvolume":"        17","file":[{"file_id":"4951","date_created":"2018-12-12T10:12:33Z","file_size":2449546,"content_type":"application/pdf","creator":"system","checksum":"761371a0129b2aa442424b9561450ece","file_name":"IST-2017-865-v1+1_acs.nanolett.7b02627.pdf","relation":"main_file","access_level":"open_access","date_updated":"2020-07-14T12:48:13Z"}],"month":"08","volume":17,"department":[{"_id":"GeKa"}],"publication":"Nano Letters","citation":{"short":"L. Vukušić, J. Kukucka, H. Watzinger, G. Katsaros, Nano Letters 17 (2017) 5706–5710.","ama":"Vukušić L, Kukucka J, Watzinger H, Katsaros G. Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. <i>Nano Letters</i>. 2017;17(9):5706-5710. doi:<a href=\"https://doi.org/10.1021/acs.nanolett.7b02627\">10.1021/acs.nanolett.7b02627</a>","chicago":"Vukušić, Lada, Josip Kukucka, Hannes Watzinger, and Georgios Katsaros. “Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.” <i>Nano Letters</i>. American Chemical Society, 2017. <a href=\"https://doi.org/10.1021/acs.nanolett.7b02627\">https://doi.org/10.1021/acs.nanolett.7b02627</a>.","mla":"Vukušić, Lada, et al. “Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.” <i>Nano Letters</i>, vol. 17, no. 9, American Chemical Society, 2017, pp. 5706–10, doi:<a href=\"https://doi.org/10.1021/acs.nanolett.7b02627\">10.1021/acs.nanolett.7b02627</a>.","ista":"Vukušić L, Kukucka J, Watzinger H, Katsaros G. 2017. Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. Nano Letters. 17(9), 5706–5710.","apa":"Vukušić, L., Kukucka, J., Watzinger, H., &#38; Katsaros, G. (2017). Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. <i>Nano Letters</i>. American Chemical Society. <a href=\"https://doi.org/10.1021/acs.nanolett.7b02627\">https://doi.org/10.1021/acs.nanolett.7b02627</a>","ieee":"L. Vukušić, J. Kukucka, H. Watzinger, and G. Katsaros, “Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry,” <i>Nano Letters</i>, vol. 17, no. 9. American Chemical Society, pp. 5706–5710, 2017."},"file_date_updated":"2020-07-14T12:48:13Z","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","quality_controlled":"1","doi":"10.1021/acs.nanolett.7b02627","has_accepted_license":"1","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)"},"publication_identifier":{"issn":["1530-6984"]},"publist_id":"6808","acknowledged_ssus":[{"_id":"M-Shop"}]},{"project":[{"call_identifier":"FP7","_id":"25517E86-B435-11E9-9278-68D0E5697425","grant_number":"335497","name":"Towards Spin qubits and Majorana fermions in Germanium self assembled hut-wires"}],"acknowledgement":"The work was supported by the EC FP7 ICT project SiSPIN no. 323841, the EC FP7 ICT project PAMS no. 610446, the ERC Starting Grant no. 335497, the FWF-I-1190-N20 project, and the Swiss NSF. We acknowledge F. Schäffler for fruitful discussions related to the hut wire growth and for giving us access to the molecular beam epitaxy system, M. Schatzl for her support in electron beam lithography, and V. Jadris ̌ko for helping us with the COMSOL simulations. Finally, we thank G. Bauer for his continuous support. ","date_created":"2018-12-11T11:51:24Z","status":"public","publisher":"American Chemical Society","publication_status":"published","title":"Heavy-hole states in germanium hut wires","article_processing_charge":"No","oa_version":"Published Version","ec_funded":1,"author":[{"last_name":"Watzinger","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","first_name":"Hannes","full_name":"Watzinger, Hannes"},{"first_name":"Christoph","full_name":"Kloeffel, Christoph","last_name":"Kloeffel"},{"orcid":"0000-0003-2424-8636","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","last_name":"Vukusic","full_name":"Vukusic, Lada","first_name":"Lada"},{"first_name":"Marta","full_name":"Rossell, Marta","last_name":"Rossell"},{"first_name":"Violetta","full_name":"Sessi, Violetta","last_name":"Sessi"},{"last_name":"Kukucka","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","first_name":"Josip","full_name":"Kukucka, Josip"},{"first_name":"Raimund","full_name":"Kirchschlager, Raimund","last_name":"Kirchschlager"},{"full_name":"Lausecker, Elisabeth","first_name":"Elisabeth","last_name":"Lausecker","id":"33662F76-F248-11E8-B48F-1D18A9856A87"},{"id":"49CBC780-F248-11E8-B48F-1D18A9856A87","last_name":"Truhlar","full_name":"Truhlar, Alisha","first_name":"Alisha"},{"first_name":"Martin","full_name":"Glaser, Martin","last_name":"Glaser"},{"last_name":"Rastelli","first_name":"Armando","full_name":"Rastelli, Armando"},{"last_name":"Fuhrer","full_name":"Fuhrer, Andreas","first_name":"Andreas"},{"last_name":"Loss","first_name":"Daniel","full_name":"Loss, Daniel"},{"orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios","full_name":"Katsaros, Georgios"}],"year":"2016","scopus_import":"1","isi":1,"language":[{"iso":"eng"}],"day":"22","ddc":["539"],"page":"6879 - 6885","type":"journal_article","issue":"11","pubrep_id":"664","date_published":"2016-09-22T00:00:00Z","publist_id":"5941","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)"},"has_accepted_license":"1","doi":"10.1021/acs.nanolett.6b02715","quality_controlled":"1","user_id":"317138e5-6ab7-11ef-aa6d-ffef3953e345","citation":{"chicago":"Watzinger, Hannes, Christoph Kloeffel, Lada Vukušić, Marta Rossell, Violetta Sessi, Josip Kukucka, Raimund Kirchschlager, et al. “Heavy-Hole States in Germanium Hut Wires.” <i>Nano Letters</i>. American Chemical Society, 2016. <a href=\"https://doi.org/10.1021/acs.nanolett.6b02715\">https://doi.org/10.1021/acs.nanolett.6b02715</a>.","apa":"Watzinger, H., Kloeffel, C., Vukušić, L., Rossell, M., Sessi, V., Kukucka, J., … Katsaros, G. (2016). Heavy-hole states in germanium hut wires. <i>Nano Letters</i>. American Chemical Society. <a href=\"https://doi.org/10.1021/acs.nanolett.6b02715\">https://doi.org/10.1021/acs.nanolett.6b02715</a>","mla":"Watzinger, Hannes, et al. “Heavy-Hole States in Germanium Hut Wires.” <i>Nano Letters</i>, vol. 16, no. 11, American Chemical Society, 2016, pp. 6879–85, doi:<a href=\"https://doi.org/10.1021/acs.nanolett.6b02715\">10.1021/acs.nanolett.6b02715</a>.","ista":"Watzinger H, Kloeffel C, Vukušić L, Rossell M, Sessi V, Kukucka J, Kirchschlager R, Lausecker E, Truhlar A, Glaser M, Rastelli A, Fuhrer A, Loss D, Katsaros G. 2016. Heavy-hole states in germanium hut wires. Nano Letters. 16(11), 6879–6885.","ieee":"H. Watzinger <i>et al.</i>, “Heavy-hole states in germanium hut wires,” <i>Nano Letters</i>, vol. 16, no. 11. American Chemical Society, pp. 6879–6885, 2016.","short":"H. Watzinger, C. Kloeffel, L. Vukušić, M. Rossell, V. Sessi, J. Kukucka, R. Kirchschlager, E. Lausecker, A. Truhlar, M. Glaser, A. Rastelli, A. Fuhrer, D. Loss, G. Katsaros, Nano Letters 16 (2016) 6879–6885.","ama":"Watzinger H, Kloeffel C, Vukušić L, et al. Heavy-hole states in germanium hut wires. <i>Nano Letters</i>. 2016;16(11):6879-6885. doi:<a href=\"https://doi.org/10.1021/acs.nanolett.6b02715\">10.1021/acs.nanolett.6b02715</a>"},"file_date_updated":"2020-07-14T12:44:44Z","publication":"Nano Letters","department":[{"_id":"GeKa"}],"volume":16,"month":"09","file":[{"checksum":"b63feece90d7b620ece49ca632e34ff3","creator":"system","content_type":"application/pdf","date_created":"2018-12-12T10:14:04Z","file_size":535121,"file_id":"5053","date_updated":"2020-07-14T12:44:44Z","access_level":"open_access","relation":"main_file","file_name":"IST-2016-664-v1+1_acs.nanolett.6b02715.pdf"}],"_id":"1328","abstract":[{"lang":"eng","text":"Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so-far unexplored type of nanostructure. Low-temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large anisotropy originates from a confined wave function of heavy-hole character. A light-hole admixture of less than 1% is estimated for the states of lowest energy, leading to a surprisingly large reduction of the out-of-plane g-factors compared with those for pure heavy holes. Given this tiny light-hole contribution, the spin lifetimes are expected to be very long, even in isotopically nonpurified samples."}],"intvolume":"        16","oa":1,"corr_author":"1","related_material":{"record":[{"id":"7977","relation":"popular_science"},{"status":"public","relation":"dissertation_contains","id":"7996"}]},"date_updated":"2026-04-08T07:27:13Z","external_id":{"isi":["000387625000025"]}}]