--- res: bibo_abstract: - The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.@eng bibo_authorlist: - foaf_Person: foaf_givenName: B. foaf_name: Severin, B. foaf_surname: Severin - foaf_Person: foaf_givenName: D. T. foaf_name: Lennon, D. T. foaf_surname: Lennon - foaf_Person: foaf_givenName: L. C. foaf_name: Camenzind, L. C. foaf_surname: Camenzind - foaf_Person: foaf_givenName: F. foaf_name: Vigneau, F. foaf_surname: Vigneau - foaf_Person: foaf_givenName: F. foaf_name: Fedele, F. foaf_surname: Fedele - foaf_Person: foaf_givenName: Daniel foaf_name: Jirovec, Daniel foaf_surname: Jirovec foaf_workInfoHomepage: http://www.librecat.org/personId=4C473F58-F248-11E8-B48F-1D18A9856A87 orcid: 0000-0002-7197-4801 - foaf_Person: foaf_givenName: A. foaf_name: Ballabio, A. foaf_surname: Ballabio - foaf_Person: foaf_givenName: D. foaf_name: Chrastina, D. foaf_surname: Chrastina - foaf_Person: foaf_givenName: G. foaf_name: Isella, G. foaf_surname: Isella - foaf_Person: foaf_givenName: M. de foaf_name: Kruijf, M. de foaf_surname: Kruijf - foaf_Person: foaf_givenName: M. J. foaf_name: Carballido, M. J. foaf_surname: Carballido - foaf_Person: foaf_givenName: S. foaf_name: Svab, S. foaf_surname: Svab - foaf_Person: foaf_givenName: A. V. foaf_name: Kuhlmann, A. V. foaf_surname: Kuhlmann - foaf_Person: foaf_givenName: F. R. foaf_name: Braakman, F. R. foaf_surname: Braakman - foaf_Person: foaf_givenName: S. foaf_name: Geyer, S. foaf_surname: Geyer - foaf_Person: foaf_givenName: F. N. M. foaf_name: Froning, F. N. M. foaf_surname: Froning - foaf_Person: foaf_givenName: H. foaf_name: Moon, H. foaf_surname: Moon - foaf_Person: foaf_givenName: M. A. foaf_name: Osborne, M. A. foaf_surname: Osborne - foaf_Person: foaf_givenName: D. foaf_name: Sejdinovic, D. foaf_surname: Sejdinovic - foaf_Person: foaf_givenName: Georgios foaf_name: Katsaros, Georgios foaf_surname: Katsaros foaf_workInfoHomepage: http://www.librecat.org/personId=38DB5788-F248-11E8-B48F-1D18A9856A87 orcid: 0000-0001-8342-202X - foaf_Person: foaf_givenName: D. M. foaf_name: Zumbühl, D. M. foaf_surname: Zumbühl - foaf_Person: foaf_givenName: G. A. D. foaf_name: Briggs, G. A. D. foaf_surname: Briggs - foaf_Person: foaf_givenName: N. foaf_name: Ares, N. foaf_surname: Ares bibo_doi: 10.48550/arXiv.2107.12975 dct_date: 2021^xs_gYear dct_language: eng dct_title: Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning@ ...