{"user_id":"8b945eb4-e2f2-11eb-945a-df72226e66a9","citation":{"ista":"Serlin M, Tschirhart CL, Polshyn H, Zhang Y, Zhu J, Watanabe K, Taniguchi T, Balents L, Young AF. 2019. Intrinsic quantized anomalous Hall effect in a moiré heterostructure. Science. 367(6480), 900–903.","chicago":"Serlin, M., C. L. Tschirhart, Hryhoriy Polshyn, Y. Zhang, J. Zhu, K. Watanabe, T. Taniguchi, L. Balents, and A. F. Young. “Intrinsic Quantized Anomalous Hall Effect in a Moiré Heterostructure.” Science. American Association for the Advancement of Science, 2019. https://doi.org/10.1126/science.aay5533.","ieee":"M. Serlin et al., “Intrinsic quantized anomalous Hall effect in a moiré heterostructure,” Science, vol. 367, no. 6480. American Association for the Advancement of Science, pp. 900–903, 2019.","short":"M. Serlin, C.L. Tschirhart, H. Polshyn, Y. Zhang, J. Zhu, K. Watanabe, T. Taniguchi, L. Balents, A.F. Young, Science 367 (2019) 900–903.","ama":"Serlin M, Tschirhart CL, Polshyn H, et al. Intrinsic quantized anomalous Hall effect in a moiré heterostructure. Science. 2019;367(6480):900-903. doi:10.1126/science.aay5533","apa":"Serlin, M., Tschirhart, C. L., Polshyn, H., Zhang, Y., Zhu, J., Watanabe, K., … Young, A. F. (2019). Intrinsic quantized anomalous Hall effect in a moiré heterostructure. Science. American Association for the Advancement of Science. https://doi.org/10.1126/science.aay5533","mla":"Serlin, M., et al. “Intrinsic Quantized Anomalous Hall Effect in a Moiré Heterostructure.” Science, vol. 367, no. 6480, American Association for the Advancement of Science, 2019, pp. 900–03, doi:10.1126/science.aay5533."},"title":"Intrinsic quantized anomalous Hall effect in a moiré heterostructure","external_id":{"pmid":["31857492"],"arxiv":["1907.00261"]},"article_processing_charge":"No","author":[{"full_name":"Serlin, M.","last_name":"Serlin","first_name":"M."},{"first_name":"C. L.","last_name":"Tschirhart","full_name":"Tschirhart, C. L."},{"first_name":"Hryhoriy","id":"edfc7cb1-526e-11ec-b05a-e6ecc27e4e48","full_name":"Polshyn, Hryhoriy","orcid":"0000-0001-8223-8896","last_name":"Polshyn"},{"first_name":"Y.","last_name":"Zhang","full_name":"Zhang, Y."},{"first_name":"J.","full_name":"Zhu, J.","last_name":"Zhu"},{"first_name":"K.","full_name":"Watanabe, K.","last_name":"Watanabe"},{"last_name":"Taniguchi","full_name":"Taniguchi, T.","first_name":"T."},{"first_name":"L.","full_name":"Balents, L.","last_name":"Balents"},{"first_name":"A. F.","last_name":"Young","full_name":"Young, A. F."}],"publication":"Science","day":"19","year":"2019","date_created":"2022-01-13T14:21:32Z","doi":"10.1126/science.aay5533","date_published":"2019-12-19T00:00:00Z","page":"900-903","acknowledgement":"The authors acknowledge discussions with A. Macdonald, Y. Saito, and M. Zaletel.","oa":1,"publisher":"American Association for the Advancement of Science","quality_controlled":"1","extern":"1","date_updated":"2023-02-21T16:00:09Z","_id":"10619","keyword":["multidisciplinary"],"status":"public","article_type":"original","type":"journal_article","language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"eissn":["1095-9203"],"issn":["0036-8075"]},"volume":367,"related_material":{"record":[{"status":"public","id":"10697","relation":"other"},{"relation":"other","id":"10698","status":"public"},{"status":"public","id":"10699","relation":"other"}]},"issue":"6480","pmid":1,"oa_version":"Preprint","abstract":[{"lang":"eng","text":"The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number C = 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory."}],"intvolume":" 367","month":"12","main_file_link":[{"url":"https://arxiv.org/abs/1907.00261","open_access":"1"}],"scopus_import":"1"}