{"publication_status":"published","scopus_import":"1","oa":1,"publisher":"American Association for the Advancement of Science","keyword":["multidisciplinary"],"oa_version":"Preprint","citation":{"ista":"Serlin M, Tschirhart CL, Polshyn H, Zhang Y, Zhu J, Watanabe K, Taniguchi T, Balents L, Young AF. 2019. Intrinsic quantized anomalous Hall effect in a moiré heterostructure. Science. 367(6480), 900–903.","ama":"Serlin M, Tschirhart CL, Polshyn H, et al. Intrinsic quantized anomalous Hall effect in a moiré heterostructure. <i>Science</i>. 2019;367(6480):900-903. doi:<a href=\"https://doi.org/10.1126/science.aay5533\">10.1126/science.aay5533</a>","mla":"Serlin, M., et al. “Intrinsic Quantized Anomalous Hall Effect in a Moiré Heterostructure.” <i>Science</i>, vol. 367, no. 6480, American Association for the Advancement of Science, 2019, pp. 900–03, doi:<a href=\"https://doi.org/10.1126/science.aay5533\">10.1126/science.aay5533</a>.","ieee":"M. Serlin <i>et al.</i>, “Intrinsic quantized anomalous Hall effect in a moiré heterostructure,” <i>Science</i>, vol. 367, no. 6480. American Association for the Advancement of Science, pp. 900–903, 2019.","chicago":"Serlin, M., C. L. Tschirhart, Hryhoriy Polshyn, Y. Zhang, J. Zhu, K. Watanabe, T. Taniguchi, L. Balents, and A. F. Young. “Intrinsic Quantized Anomalous Hall Effect in a Moiré Heterostructure.” <i>Science</i>. American Association for the Advancement of Science, 2019. <a href=\"https://doi.org/10.1126/science.aay5533\">https://doi.org/10.1126/science.aay5533</a>.","short":"M. Serlin, C.L. Tschirhart, H. Polshyn, Y. Zhang, J. Zhu, K. Watanabe, T. Taniguchi, L. Balents, A.F. Young, Science 367 (2019) 900–903.","apa":"Serlin, M., Tschirhart, C. L., Polshyn, H., Zhang, Y., Zhu, J., Watanabe, K., … Young, A. F. (2019). Intrinsic quantized anomalous Hall effect in a moiré heterostructure. <i>Science</i>. American Association for the Advancement of Science. <a href=\"https://doi.org/10.1126/science.aay5533\">https://doi.org/10.1126/science.aay5533</a>"},"type":"journal_article","publication_identifier":{"issn":["0036-8075"],"eissn":["1095-9203"]},"doi":"10.1126/science.aay5533","_id":"10619","issue":"6480","month":"12","title":"Intrinsic quantized anomalous Hall effect in a moiré heterostructure","year":"2019","date_published":"2019-12-19T00:00:00Z","article_processing_charge":"No","publication":"Science","date_created":"2022-01-13T14:21:32Z","user_id":"8b945eb4-e2f2-11eb-945a-df72226e66a9","page":"900-903","language":[{"iso":"eng"}],"author":[{"full_name":"Serlin, M.","first_name":"M.","last_name":"Serlin"},{"last_name":"Tschirhart","first_name":"C. L.","full_name":"Tschirhart, C. L."},{"full_name":"Polshyn, Hryhoriy","first_name":"Hryhoriy","orcid":"0000-0001-8223-8896","id":"edfc7cb1-526e-11ec-b05a-e6ecc27e4e48","last_name":"Polshyn"},{"full_name":"Zhang, Y.","first_name":"Y.","last_name":"Zhang"},{"last_name":"Zhu","full_name":"Zhu, J.","first_name":"J."},{"last_name":"Watanabe","first_name":"K.","full_name":"Watanabe, K."},{"full_name":"Taniguchi, T.","first_name":"T.","last_name":"Taniguchi"},{"full_name":"Balents, L.","first_name":"L.","last_name":"Balents"},{"last_name":"Young","full_name":"Young, A. F.","first_name":"A. F."}],"pmid":1,"volume":367,"article_type":"original","external_id":{"arxiv":["1907.00261"],"pmid":["31857492"]},"day":"19","quality_controlled":"1","date_updated":"2023-02-21T16:00:09Z","intvolume":"       367","status":"public","abstract":[{"text":"The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number C = 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.","lang":"eng"}],"related_material":{"record":[{"relation":"other","id":"10697","status":"public"},{"relation":"other","id":"10698","status":"public"},{"relation":"other","id":"10699","status":"public"}]},"main_file_link":[{"url":"https://arxiv.org/abs/1907.00261","open_access":"1"}],"acknowledgement":"The authors acknowledge discussions with A. Macdonald, Y. Saito, and M. Zaletel.","extern":"1"}