---
_id: '10626'
abstract:
- lang: eng
  text: "Owing to their wide tunability, multiple internal degrees of freedom, and
    low disorder, graphene heterostructures are emerging as a promising experimental
    platform for fractional quantum Hall (FQH) studies. Here, we report FQH thermal
    activation gap measurements in dual graphite-gated monolayer graphene devices
    fabricated in an edgeless Corbino geometry. In devices with substrate-induced
    sublattice splitting, we find a tunable crossover between single- and multicomponent
    FQH states in the zero energy Landau level. Activation gaps in the single-component
    regime show excellent agreement with numerical calculations using a single broadening
    parameter \r\nΓ≈7.2K. In the first excited Landau level, in contrast, FQH gaps
    are strongly influenced by Landau level mixing, and we observe an unexpected valley-ordered
    state at integer filling ν=−4."
acknowledgement: We thank Cory Dean, S. Chen, Y. Zeng, M. Yankowitz, and J. Li for
  discussing their unpublished data and for sharing the stack inversion technique.
  The authors acknowledge further discussions of the results with I. Sodemann, M.
  Zaletel, C. Nayak, and J. Jain. A. F. Y., H. P., H. Z., and E. M. S. were supported
  by the ARO under awards 69188PHH and MURI W911NF-17-1-0323. A portion of this work
  was performed at the National High Magnetic Field Laboratory, which is supported
  by National Science Foundation Cooperative Agreement No. DMR-1644779 and the State
  of Florida. K. W. and T. T. acknowledge support from the Elemental Strategy Initiative
  conducted by the MEXT, Japan, and JSPS KAKENHI Grant No. JP15K21722. E. M. S. acknowledges
  the support of the Elings Prize Fellowship in Science of the California Nanosystems
  Institute at the University of California, Santa Barbara. A. F. Y. acknowledges
  the support of the David and Lucile Packard Foundation.
article_number: '226801'
article_processing_charge: No
article_type: original
arxiv: 1
author:
- first_name: Hryhoriy
  full_name: Polshyn, Hryhoriy
  id: edfc7cb1-526e-11ec-b05a-e6ecc27e4e48
  last_name: Polshyn
  orcid: 0000-0001-8223-8896
- first_name: H.
  full_name: Zhou, H.
  last_name: Zhou
- first_name: E. M.
  full_name: Spanton, E. M.
  last_name: Spanton
- first_name: T.
  full_name: Taniguchi, T.
  last_name: Taniguchi
- first_name: K.
  full_name: Watanabe, K.
  last_name: Watanabe
- first_name: A. F.
  full_name: Young, A. F.
  last_name: Young
citation:
  ama: Polshyn H, Zhou H, Spanton EM, Taniguchi T, Watanabe K, Young AF. Quantitative
    transport measurements of fractional quantum Hall energy gaps in edgeless graphene
    devices. <i>Physical Review Letters</i>. 2018;121(22). doi:<a href="https://doi.org/10.1103/physrevlett.121.226801">10.1103/physrevlett.121.226801</a>
  apa: Polshyn, H., Zhou, H., Spanton, E. M., Taniguchi, T., Watanabe, K., &#38; Young,
    A. F. (2018). Quantitative transport measurements of fractional quantum Hall energy
    gaps in edgeless graphene devices. <i>Physical Review Letters</i>. American Physical
    Society. <a href="https://doi.org/10.1103/physrevlett.121.226801">https://doi.org/10.1103/physrevlett.121.226801</a>
  chicago: Polshyn, Hryhoriy, H. Zhou, E. M. Spanton, T. Taniguchi, K. Watanabe, and
    A. F. Young. “Quantitative Transport Measurements of Fractional Quantum Hall Energy
    Gaps in Edgeless Graphene Devices.” <i>Physical Review Letters</i>. American Physical
    Society, 2018. <a href="https://doi.org/10.1103/physrevlett.121.226801">https://doi.org/10.1103/physrevlett.121.226801</a>.
  ieee: H. Polshyn, H. Zhou, E. M. Spanton, T. Taniguchi, K. Watanabe, and A. F. Young,
    “Quantitative transport measurements of fractional quantum Hall energy gaps in
    edgeless graphene devices,” <i>Physical Review Letters</i>, vol. 121, no. 22.
    American Physical Society, 2018.
  ista: Polshyn H, Zhou H, Spanton EM, Taniguchi T, Watanabe K, Young AF. 2018. Quantitative
    transport measurements of fractional quantum Hall energy gaps in edgeless graphene
    devices. Physical Review Letters. 121(22), 226801.
  mla: Polshyn, Hryhoriy, et al. “Quantitative Transport Measurements of Fractional
    Quantum Hall Energy Gaps in Edgeless Graphene Devices.” <i>Physical Review Letters</i>,
    vol. 121, no. 22, 226801, American Physical Society, 2018, doi:<a href="https://doi.org/10.1103/physrevlett.121.226801">10.1103/physrevlett.121.226801</a>.
  short: H. Polshyn, H. Zhou, E.M. Spanton, T. Taniguchi, K. Watanabe, A.F. Young,
    Physical Review Letters 121 (2018).
date_created: 2022-01-14T12:15:47Z
date_published: 2018-11-28T00:00:00Z
date_updated: 2022-01-14T13:48:35Z
day: '28'
doi: 10.1103/physrevlett.121.226801
extern: '1'
external_id:
  arxiv:
  - '1805.04199'
fulldoi: https://doi.org/10.1103/physrevlett.121.226801
intvolume: '       121'
issue: '22'
keyword:
- general physics and astronomy
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://arxiv.org/abs/1805.04199
month: '11'
oa: 1
oa_version: Preprint
publication: Physical Review Letters
publication_identifier:
  eissn:
  - 1079-7114
  issn:
  - 0031-9007
publication_status: published
publisher: American Physical Society
quality_controlled: '1'
scopus_import: '1'
status: public
title: Quantitative transport measurements of fractional quantum Hall energy gaps
  in edgeless graphene devices
type: journal_article
user_id: 8b945eb4-e2f2-11eb-945a-df72226e66a9
volume: 121
year: '2018'
...