{"publication":"Nanomaterials","year":"2022","date_updated":"2023-10-17T11:41:28Z","publication_identifier":{"issn":["2079-4991"]},"tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","short":"CC BY (4.0)","image":"/images/cc_by.png"},"article_type":"original","citation":{"short":"A. Shuvaev, U. Dziom, J. Gospodarič, E.G. Novik, A.A. Dobretsova, N.N. Mikhailov, Z.D. Kvon, A. Pimenov, Nanomaterials 12 (2022).","ama":"Shuvaev A, Dziom U, Gospodarič J, et al. Band structure near the Dirac Point in HgTe quantum wells with critical thickness. <i>Nanomaterials</i>. 2022;12(14). doi:<a href=\"https://doi.org/10.3390/nano12142492\">10.3390/nano12142492</a>","ista":"Shuvaev A, Dziom U, Gospodarič J, Novik EG, Dobretsova AA, Mikhailov NN, Kvon ZD, Pimenov A. 2022. Band structure near the Dirac Point in HgTe quantum wells with critical thickness. Nanomaterials. 12(14), 2492.","mla":"Shuvaev, Alexey, et al. “Band Structure near the Dirac Point in HgTe Quantum Wells with Critical Thickness.” <i>Nanomaterials</i>, vol. 12, no. 14, 2492, MDPI, 2022, doi:<a href=\"https://doi.org/10.3390/nano12142492\">10.3390/nano12142492</a>.","ieee":"A. Shuvaev <i>et al.</i>, “Band structure near the Dirac Point in HgTe quantum wells with critical thickness,” <i>Nanomaterials</i>, vol. 12, no. 14. MDPI, 2022.","chicago":"Shuvaev, Alexey, Uladzislau Dziom, Jan Gospodarič, Elena G. Novik, Alena A. Dobretsova, Nikolay N. Mikhailov, Ze Don Kvon, and Andrei Pimenov. “Band Structure near the Dirac Point in HgTe Quantum Wells with Critical Thickness.” <i>Nanomaterials</i>. MDPI, 2022. <a href=\"https://doi.org/10.3390/nano12142492\">https://doi.org/10.3390/nano12142492</a>.","apa":"Shuvaev, A., Dziom, U., Gospodarič, J., Novik, E. G., Dobretsova, A. A., Mikhailov, N. N., … Pimenov, A. (2022). Band structure near the Dirac Point in HgTe quantum wells with critical thickness. <i>Nanomaterials</i>. MDPI. <a href=\"https://doi.org/10.3390/nano12142492\">https://doi.org/10.3390/nano12142492</a>"},"file":[{"file_name":"2022_Nanomaterials_Shuvaev.pdf","file_size":464840,"date_updated":"2023-01-30T11:16:54Z","relation":"main_file","access_level":"open_access","content_type":"application/pdf","creator":"dernst","success":1,"file_id":"12459","date_created":"2023-01-30T11:16:54Z","checksum":"efad6742f89f39a18bec63116dd689a0"}],"date_created":"2023-01-16T10:02:31Z","abstract":[{"lang":"eng","text":"Mercury telluride (HgTe) thin films with a critical thickness of 6.5 nm are predicted to possess a gapless Dirac-like band structure. We report a comprehensive study on gated and optically doped samples by magnetooptical spectroscopy in the THz range. The quasi-classical analysis of the cyclotron resonance allowed the mapping of the band dispersion of Dirac charge carriers in a broad range of electron and hole doping. A smooth transition through the charge neutrality point between Dirac holes and electrons was observed. An additional peak coming from a second type of holes with an almost density-independent mass of around 0.04m0 was detected in the hole-doping range and attributed to an asymmetric spin splitting of the Dirac cone. Spectroscopic evidence for disorder-induced band energy fluctuations could not be detected in present cyclotron resonance experiments."}],"type":"journal_article","intvolume":"        12","article_processing_charge":"Yes","month":"07","language":[{"iso":"eng"}],"keyword":["General Materials Science","General Chemical Engineering"],"ddc":["530"],"acknowledgement":"This work was supported by the Austrian Science Funds (W1243, I 3456-N27, I 5539-N).\r\nOpen Access Funding by the Austrian Science Fund (FWF).","status":"public","has_accepted_license":"1","scopus_import":"1","day":"20","date_published":"2022-07-20T00:00:00Z","_id":"12278","quality_controlled":"1","department":[{"_id":"ZhAl"}],"volume":12,"file_date_updated":"2023-01-30T11:16:54Z","oa_version":"Published Version","author":[{"last_name":"Shuvaev","full_name":"Shuvaev, Alexey","first_name":"Alexey"},{"full_name":"Dziom, Uladzislau","last_name":"Dziom","orcid":"0000-0002-1648-0999","first_name":"Uladzislau","id":"6A9A37C2-8C5C-11E9-AE53-F2FDE5697425"},{"full_name":"Gospodarič, Jan","last_name":"Gospodarič","first_name":"Jan"},{"first_name":"Elena G.","full_name":"Novik, Elena G.","last_name":"Novik"},{"first_name":"Alena A.","last_name":"Dobretsova","full_name":"Dobretsova, Alena A."},{"last_name":"Mikhailov","full_name":"Mikhailov, Nikolay N.","first_name":"Nikolay N."},{"full_name":"Kvon, Ze Don","last_name":"Kvon","first_name":"Ze Don"},{"last_name":"Pimenov","full_name":"Pimenov, Andrei","first_name":"Andrei"}],"doi":"10.3390/nano12142492","external_id":{"isi":["000834401600001"]},"user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","publication_status":"published","publisher":"MDPI","article_number":"2492","issue":"14","isi":1,"title":"Band structure near the Dirac Point in HgTe quantum wells with critical thickness","oa":1}