{"publisher":"American Physical Society","external_id":{"isi":["001012022600004"],"arxiv":["2206.05746"]},"acknowledged_ssus":[{"_id":"NanoFab"},{"_id":"M-Shop"}],"date_created":"2023-07-23T22:01:12Z","oa":1,"department":[{"_id":"AnHi"},{"_id":"OnHo"}],"month":"06","day":"09","article_type":"original","issue":"6","language":[{"iso":"eng"}],"author":[{"id":"29C8C0B4-F248-11E8-B48F-1D18A9856A87","first_name":"Duc T","last_name":"Phan","full_name":"Phan, Duc T"},{"full_name":"Falthansl-Scheinecker, Paul","last_name":"Falthansl-Scheinecker","first_name":"Paul","id":"85b43b21-15b2-11ec-abd3-e2c252cc2285"},{"id":"4328fa4c-f128-11eb-9611-c107b0fe4d51","last_name":"Mishra","full_name":"Mishra, Umang","first_name":"Umang"},{"last_name":"Strickland","full_name":"Strickland, W. M.","first_name":"W. M."},{"first_name":"D.","full_name":"Langone, D.","last_name":"Langone"},{"full_name":"Shabani, J.","last_name":"Shabani","first_name":"J."},{"id":"4AD6785A-F248-11E8-B48F-1D18A9856A87","first_name":"Andrew P","orcid":"0000-0003-2607-2363","last_name":"Higginbotham","full_name":"Higginbotham, Andrew P"}],"year":"2023","publication_identifier":{"eissn":["2331-7019"]},"publication":"Physical Review Applied","abstract":[{"text":"We build a parametric amplifier with a Josephson field-effect transistor (JoFET) as the active element. The resonant frequency of the device is field-effect tunable over a range of 2 GHz. The JoFET amplifier has 20 dB of gain, 4 MHz of instantaneous bandwidth, and a 1-dB compression point of -125.5 dBm when operated at a fixed resonance frequency.\r\n\r\n","lang":"eng"}],"oa_version":"Preprint","citation":{"ieee":"D. T. Phan <i>et al.</i>, “Gate-tunable superconductor-semiconductor parametric amplifier,” <i>Physical Review Applied</i>, vol. 19, no. 6. American Physical Society, 2023.","mla":"Phan, Duc T., et al. “Gate-Tunable Superconductor-Semiconductor Parametric Amplifier.” <i>Physical Review Applied</i>, vol. 19, no. 6, 064032, American Physical Society, 2023, doi:<a href=\"https://doi.org/10.1103/PhysRevApplied.19.064032\">10.1103/PhysRevApplied.19.064032</a>.","ama":"Phan DT, Falthansl-Scheinecker P, Mishra U, et al. Gate-tunable superconductor-semiconductor parametric amplifier. <i>Physical Review Applied</i>. 2023;19(6). doi:<a href=\"https://doi.org/10.1103/PhysRevApplied.19.064032\">10.1103/PhysRevApplied.19.064032</a>","ista":"Phan DT, Falthansl-Scheinecker P, Mishra U, Strickland WM, Langone D, Shabani J, Higginbotham AP. 2023. Gate-tunable superconductor-semiconductor parametric amplifier. Physical Review Applied. 19(6), 064032.","chicago":"Phan, Duc T, Paul Falthansl-Scheinecker, Umang Mishra, W. M. Strickland, D. Langone, J. Shabani, and Andrew P Higginbotham. “Gate-Tunable Superconductor-Semiconductor Parametric Amplifier.” <i>Physical Review Applied</i>. American Physical Society, 2023. <a href=\"https://doi.org/10.1103/PhysRevApplied.19.064032\">https://doi.org/10.1103/PhysRevApplied.19.064032</a>.","short":"D.T. Phan, P. Falthansl-Scheinecker, U. Mishra, W.M. Strickland, D. Langone, J. Shabani, A.P. Higginbotham, Physical Review Applied 19 (2023).","apa":"Phan, D. T., Falthansl-Scheinecker, P., Mishra, U., Strickland, W. M., Langone, D., Shabani, J., &#38; Higginbotham, A. P. (2023). Gate-tunable superconductor-semiconductor parametric amplifier. <i>Physical Review Applied</i>. American Physical Society. <a href=\"https://doi.org/10.1103/PhysRevApplied.19.064032\">https://doi.org/10.1103/PhysRevApplied.19.064032</a>"},"intvolume":"        19","scopus_import":"1","related_material":{"record":[{"status":"public","id":"14547","relation":"dissertation_contains"}]},"user_id":"4359f0d1-fa6c-11eb-b949-802e58b17ae8","status":"public","isi":1,"article_number":"064032","date_updated":"2023-11-30T10:56:03Z","publication_status":"published","type":"journal_article","volume":19,"quality_controlled":"1","title":"Gate-tunable superconductor-semiconductor parametric amplifier","article_processing_charge":"No","date_published":"2023-06-09T00:00:00Z","acknowledgement":"We thank Shyam Shankar for helpful feedback on the manuscript. We gratefully acknowledge the support of the ISTA nanofabrication facility, the Miba Machine Shop, and the eMachine Shop. The NYU team acknowledges support from Army Research Office Grant No. W911NF2110303.","main_file_link":[{"open_access":"1","url":"https://arxiv.org/abs/2206.05746"}],"doi":"10.1103/PhysRevApplied.19.064032","_id":"13264"}