{"author":[{"last_name":"Wan","first_name":"Shanhong","full_name":"Wan, Shanhong"},{"full_name":"Xiao, Shanshan","last_name":"Xiao","first_name":"Shanshan"},{"full_name":"Li, Mingquan","last_name":"Li","first_name":"Mingquan"},{"full_name":"Wang, Xin","last_name":"Wang","first_name":"Xin"},{"full_name":"Lim, Khak Ho","last_name":"Lim","first_name":"Khak Ho"},{"last_name":"Hong","first_name":"Min","full_name":"Hong, Min"},{"orcid":"0000-0001-5013-2843","last_name":"Ibáñez","first_name":"Maria","id":"43C61214-F248-11E8-B48F-1D18A9856A87","full_name":"Ibáñez, Maria"},{"last_name":"Cabot","first_name":"Andreu","full_name":"Cabot, Andreu"},{"first_name":"Yu","orcid":"0000-0001-7313-6740","last_name":"Liu","full_name":"Liu, Yu","id":"2A70014E-F248-11E8-B48F-1D18A9856A87"}],"language":[{"iso":"eng"}],"day":"28","publication":"Small Methods","external_id":{"pmid":["38152986"]},"year":"2023","publisher":"Wiley","abstract":[{"text":"Developing cost-effective and high-performance thermoelectric (TE) materials to assemble efficient TE devices presents a multitude of challenges and opportunities. Cu3SbSe4 is a promising p-type TE material based on relatively earth abundant elements. However, the challenge lies in its poor electrical conductivity. Herein, an efficient and scalable solution-based approach is developed to synthesize high-quality Cu3SbSe4 nanocrystals doped with Pb at the Sb site. After ligand displacement and annealing treatments, the dried powders are consolidated into dense pellets, and their TE properties are investigated. Pb doping effectively increases the charge carrier concentration, resulting in a significant increase in electrical conductivity, while the Seebeck coefficients remain consistently high. The calculated band structure shows that Pb doping induces band convergence, thereby increasing the effective mass. Furthermore, the large ionic radius of Pb2+ results in the generation of additional point and plane defects and interphases, dramatically enhancing phonon scattering, which significantly decreases the lattice thermal conductivity at high temperatures. Overall, a maximum figure of merit (zTmax) ≈ 0.85 at 653 K is obtained in Cu3Sb0.97Pb0.03Se4. This represents a 1.6-fold increase compared to the undoped sample and exceeds most doped Cu3SbSe4-based materials produced by solid-state, demonstrating advantages of versatility and cost-effectiveness using a solution-based technology.","lang":"eng"}],"publication_status":"epub_ahead","month":"12","date_created":"2024-01-07T23:00:51Z","_id":"14734","scopus_import":"1","article_type":"original","pmid":1,"status":"public","date_published":"2023-12-28T00:00:00Z","quality_controlled":"1","type":"journal_article","date_updated":"2024-01-08T09:17:04Z","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","project":[{"_id":"9B8F7476-BA93-11EA-9121-9846C619BF3A","name":"HighTE: The Werner Siemens Laboratory for the High Throughput Discovery of Semiconductors for Waste Heat Recovery"}],"doi":"10.1002/smtd.202301377","oa_version":"None","department":[{"_id":"MaIb"}],"publication_identifier":{"eissn":["2366-9608"]},"acknowledgement":"Y.L. acknowledges funding from the National Natural Science Foundation of China (NSFC) (Grants No. 22209034), the Innovation and Entrepreneurship Project of Overseas Returnees in Anhui Province (Grant No. 2022LCX002). K.H.L. acknowledges financial support from the National Natural Science Foundation of China (NSFC) (Grant No. 22208293). M.I. acknowledges financial support from ISTA and the Werner Siemens Foundation.","title":"Band engineering through Pb-doping of nanocrystal building blocks to enhance thermoelectric performance in Cu3SbSe4","citation":{"mla":"Wan, Shanhong, et al. “Band Engineering through Pb-Doping of Nanocrystal Building Blocks to Enhance Thermoelectric Performance in Cu3SbSe4.” <i>Small Methods</i>, Wiley, 2023, doi:<a href=\"https://doi.org/10.1002/smtd.202301377\">10.1002/smtd.202301377</a>.","ista":"Wan S, Xiao S, Li M, Wang X, Lim KH, Hong M, Ibáñez M, Cabot A, Liu Y. 2023. Band engineering through Pb-doping of nanocrystal building blocks to enhance thermoelectric performance in Cu3SbSe4. Small Methods.","ieee":"S. Wan <i>et al.</i>, “Band engineering through Pb-doping of nanocrystal building blocks to enhance thermoelectric performance in Cu3SbSe4,” <i>Small Methods</i>. Wiley, 2023.","short":"S. Wan, S. Xiao, M. Li, X. Wang, K.H. Lim, M. Hong, M. Ibáñez, A. Cabot, Y. Liu, Small Methods (2023).","apa":"Wan, S., Xiao, S., Li, M., Wang, X., Lim, K. H., Hong, M., … Liu, Y. (2023). Band engineering through Pb-doping of nanocrystal building blocks to enhance thermoelectric performance in Cu3SbSe4. <i>Small Methods</i>. Wiley. <a href=\"https://doi.org/10.1002/smtd.202301377\">https://doi.org/10.1002/smtd.202301377</a>","chicago":"Wan, Shanhong, Shanshan Xiao, Mingquan Li, Xin Wang, Khak Ho Lim, Min Hong, Maria Ibáñez, Andreu Cabot, and Yu Liu. “Band Engineering through Pb-Doping of Nanocrystal Building Blocks to Enhance Thermoelectric Performance in Cu3SbSe4.” <i>Small Methods</i>. Wiley, 2023. <a href=\"https://doi.org/10.1002/smtd.202301377\">https://doi.org/10.1002/smtd.202301377</a>.","ama":"Wan S, Xiao S, Li M, et al. Band engineering through Pb-doping of nanocrystal building blocks to enhance thermoelectric performance in Cu3SbSe4. <i>Small Methods</i>. 2023. doi:<a href=\"https://doi.org/10.1002/smtd.202301377\">10.1002/smtd.202301377</a>"},"article_processing_charge":"No"}