---
res:
  bibo_abstract:
  - The epitaxial growth of a strained Ge layer, which is a promising candidate for
    the channel material of a hole spin qubit, has been demonstrated on 300 mm Si
    wafers using commercially available Si0.3Ge0.7 strain relaxed buffer (SRB) layers.
    The assessment of the layer and the interface qualities for a buried strained
    Ge layer embedded in Si0.3Ge0.7 layers is reported. The XRD reciprocal space mapping
    confirmed that the reduction of the growth temperature enables the 2-dimensional
    growth of the Ge layer fully strained with respect to the Si0.3Ge0.7. Nevertheless,
    dislocations at the top and/or bottom interface of the Ge layer were observed
    by means of electron channeling contrast imaging, suggesting the importance of
    the careful dislocation assessment. The interface abruptness does not depend on
    the selection of the precursor gases, but it is strongly influenced by the growth
    temperature which affects the coverage of the surface H-passivation. The mobility
    of 2.7 × 105 cm2/Vs is promising, while the low percolation density of 3 × 1010
    /cm2 measured with a Hall-bar device at 7 K illustrates the high quality of the
    heterostructure thanks to the high Si0.3Ge0.7 SRB quality.@eng
  bibo_authorlist:
  - foaf_Person:
      foaf_givenName: Yosuke
      foaf_name: Shimura, Yosuke
      foaf_surname: Shimura
  - foaf_Person:
      foaf_givenName: Clement
      foaf_name: Godfrin, Clement
      foaf_surname: Godfrin
  - foaf_Person:
      foaf_givenName: Andriy
      foaf_name: Hikavyy, Andriy
      foaf_surname: Hikavyy
  - foaf_Person:
      foaf_givenName: Roy
      foaf_name: Li, Roy
      foaf_surname: Li
  - foaf_Person:
      foaf_givenName: Juan L
      foaf_name: Aguilera Servin, Juan L
      foaf_surname: Aguilera Servin
      foaf_workInfoHomepage: http://www.librecat.org/personId=2A67C376-F248-11E8-B48F-1D18A9856A87
    orcid: 0000-0002-2862-8372
  - foaf_Person:
      foaf_givenName: Georgios
      foaf_name: Katsaros, Georgios
      foaf_surname: Katsaros
      foaf_workInfoHomepage: http://www.librecat.org/personId=38DB5788-F248-11E8-B48F-1D18A9856A87
    orcid: 0000-0001-8342-202X
  - foaf_Person:
      foaf_givenName: Paola
      foaf_name: Favia, Paola
      foaf_surname: Favia
  - foaf_Person:
      foaf_givenName: Han
      foaf_name: Han, Han
      foaf_surname: Han
  - foaf_Person:
      foaf_givenName: Danny
      foaf_name: Wan, Danny
      foaf_surname: Wan
  - foaf_Person:
      foaf_givenName: Kristiaan
      foaf_name: de Greve, Kristiaan
      foaf_surname: de Greve
  - foaf_Person:
      foaf_givenName: Roger
      foaf_name: Loo, Roger
      foaf_surname: Loo
  bibo_doi: 10.1016/j.mssp.2024.108231
  bibo_issue: '5'
  bibo_volume: 174
  dct_date: 2024^xs_gYear
  dct_identifier:
  - UT:001188520000001
  dct_isPartOf:
  - http://id.crossref.org/issn/1369-8001
  dct_language: eng
  dct_publisher: Elsevier@
  dct_subject:
  - Mechanical Engineering
  - Mechanics of Materials
  - Condensed Matter Physics
  - General Materials Science
  dct_title: Compressively strained epitaxial Ge layers for quantum computing applications@
...