---
OA_type: closed access
_id: '1740'
abstract:
- lang: eng
  text: 'A systematic study of the morphology of self-organized islands in the InAs/GaAs(0
    0 1) and Ge/Si(0 0 1) systems is presented, based on high-resolution scanning
    tunneling microscopy measurements. We demonstrate that in both cases two main
    island families coexist: smaller pyramids bound by one type of shallow facets
    and larger multifaceted domes. Their structure and facet orientation are precisely
    determined, thus solving a highly debated argument in the case of InAs/GaAs(0
    0 1). The comparison between the two material systems reveals the existence of
    striking similarities that extend even to the nature of island precursors and
    to the islands that form when depositing InGaAs or GeSi alloys. The implications
    of these observations on a possible universal description of the Stranski-Krastanow
    growth mode are discussed with respect to recent theoretical results.'
article_processing_charge: No
article_type: original
author:
- first_name: Giovanni
  full_name: Costantini, Giovanni
  last_name: Costantini
- first_name: Armando
  full_name: Rastelli, Armando
  last_name: Rastelli
- first_name: Carlos
  full_name: Manzano, Carlos
  last_name: Manzano
- first_name: P
  full_name: Acosta Diaz, P
  last_name: Acosta Diaz
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
- first_name: Rudeeson
  full_name: Songmuang, Rudeeson
  last_name: Songmuang
- first_name: Oliver
  full_name: Schmidt, Oliver
  last_name: Schmidt
- first_name: Hans
  full_name: Von Känel, Hans
  last_name: Von Känel
- first_name: Klaus
  full_name: Kern, Klaus
  last_name: Kern
citation:
  ama: Costantini G, Rastelli A, Manzano C, et al. Pyramids and domes in the InAs/GaAs
    (0 0 1) and Ge/Si (0 0 1) systems. <i>Journal of Crystal Growth</i>. 2005;278(1-4):38-45.
    doi:<a href="https://doi.org/10.1016/j.jcrysgro.2004.12.047">10.1016/j.jcrysgro.2004.12.047</a>
  apa: Costantini, G., Rastelli, A., Manzano, C., Acosta Diaz, P., Katsaros, G., Songmuang,
    R., … Kern, K. (2005). Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0
    0 1) systems. <i>Journal of Crystal Growth</i>. Elsevier. <a href="https://doi.org/10.1016/j.jcrysgro.2004.12.047">https://doi.org/10.1016/j.jcrysgro.2004.12.047</a>
  chicago: Costantini, Giovanni, Armando Rastelli, Carlos Manzano, P Acosta Diaz,
    Georgios Katsaros, Rudeeson Songmuang, Oliver Schmidt, Hans Von Känel, and Klaus
    Kern. “Pyramids and Domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) Systems.”
    <i>Journal of Crystal Growth</i>. Elsevier, 2005. <a href="https://doi.org/10.1016/j.jcrysgro.2004.12.047">https://doi.org/10.1016/j.jcrysgro.2004.12.047</a>.
  ieee: G. Costantini <i>et al.</i>, “Pyramids and domes in the InAs/GaAs (0 0 1)
    and Ge/Si (0 0 1) systems,” <i>Journal of Crystal Growth</i>, vol. 278, no. 1–4.
    Elsevier, pp. 38–45, 2005.
  ista: Costantini G, Rastelli A, Manzano C, Acosta Diaz P, Katsaros G, Songmuang
    R, Schmidt O, Von Känel H, Kern K. 2005. Pyramids and domes in the InAs/GaAs (0
    0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 278(1–4), 38–45.
  mla: Costantini, Giovanni, et al. “Pyramids and Domes in the InAs/GaAs (0 0 1) and
    Ge/Si (0 0 1) Systems.” <i>Journal of Crystal Growth</i>, vol. 278, no. 1–4, Elsevier,
    2005, pp. 38–45, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2004.12.047">10.1016/j.jcrysgro.2004.12.047</a>.
  short: G. Costantini, A. Rastelli, C. Manzano, P. Acosta Diaz, G. Katsaros, R. Songmuang,
    O. Schmidt, H. Von Känel, K. Kern, Journal of Crystal Growth 278 (2005) 38–45.
date_created: 2018-12-11T11:53:45Z
date_published: 2005-05-01T00:00:00Z
date_updated: 2026-08-14T07:55:34Z
day: '01'
doi: 10.1016/j.jcrysgro.2004.12.047
extern: '1'
intvolume: '       278'
issue: 1-4
language:
- iso: eng
month: '05'
oa_version: None
page: 38 - 45
publication: Journal of Crystal Growth
publication_status: published
publisher: Elsevier
publist_id: '5384'
status: public
title: Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems
type: journal_article
user_id: 317138e5-6ab7-11ef-aa6d-ffef3953e345
volume: 278
year: '2005'
...