article published Ulrich Denker author Armando Rastelli author Mathieu Stoffel author Jerry Tersoff author Georgios Katsaros author 38DB5788-F248-11E8-B48F-1D18A9856A870000-0001-8342-202X Giovanni Costantini author Klaus Kern author Neng Jin Phillipp author David Jesson author Oliver Schmidt author SiGe islands move laterally on a Si(001) substrate during in situ postgrowth annealing. This surprising behavior is revealed by an analysis of the substrate surface morphology after island removal using wet chemical etching. We explain the island motion by asymmetric surface-mediated alloying. Material leaves one side of the island by surface diffusion, and mixes with additional Si from the surrounding surface as it redeposits on the other side. Thus the island moves laterally while becoming larger and more dilute. American Physical Society2005 eng 0031-9007 1079-7114 1609033410.1103/PhysRevLett.94.216103 9421 yes U. Denker <i>et al.</i>, “Lateral motion of SiGe islands driven by surface-mediated alloying,” <i>Physical Review Letters</i>, vol. 94, no. 21. American Physical Society, 2005. Denker, U., Rastelli, A., Stoffel, M., Tersoff, J., Katsaros, G., Costantini, G., … Schmidt, O. (2005). Lateral motion of SiGe islands driven by surface-mediated alloying. <i>Physical Review Letters</i>. American Physical Society. <a href="https://doi.org/10.1103/PhysRevLett.94.216103">https://doi.org/10.1103/PhysRevLett.94.216103</a> Denker, Ulrich, Armando Rastelli, Mathieu Stoffel, Jerry Tersoff, Georgios Katsaros, Giovanni Costantini, Klaus Kern, Neng Jin Phillipp, David Jesson, and Oliver Schmidt. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.” <i>Physical Review Letters</i>. American Physical Society, 2005. <a href="https://doi.org/10.1103/PhysRevLett.94.216103">https://doi.org/10.1103/PhysRevLett.94.216103</a>. U. Denker, A. Rastelli, M. Stoffel, J. Tersoff, G. Katsaros, G. Costantini, K. Kern, N. Jin Phillipp, D. Jesson, O. Schmidt, Physical Review Letters 94 (2005). Denker U, Rastelli A, Stoffel M, Tersoff J, Katsaros G, Costantini G, Kern K, Jin Phillipp N, Jesson D, Schmidt O. 2005. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 94(21). Denker, Ulrich, et al. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.” <i>Physical Review Letters</i>, vol. 94, no. 21, American Physical Society, 2005, doi:<a href="https://doi.org/10.1103/PhysRevLett.94.216103">10.1103/PhysRevLett.94.216103</a>. Denker U, Rastelli A, Stoffel M, et al. Lateral motion of SiGe islands driven by surface-mediated alloying. <i>Physical Review Letters</i>. 2005;94(21). doi:<a href="https://doi.org/10.1103/PhysRevLett.94.216103">10.1103/PhysRevLett.94.216103</a> 17412018-12-11T11:53:46Z2026-08-13T07:52:01Z