TY - JOUR AB - The effects of substrate temperature, growth rate, and postgrowth annealing on the composition of Ge islands grown on Si(001) were investigated with a combination of selective wet chemical etching and atomic force microscopy. A simple kinetic model comprising only surface diffusion processes can explain all the experimentally observed compositional profiles for pyramid and dome islands grown in the 560-620°C range. From this model three-dimensional compositional maps were extracted. By performing annealing experiments a change in the composition of the domes was observed. This could be explained as the result of the islands' movement induced by alloying-driven energy minimization. Also in this case kinetically hindered bulk diffusion processes are not needed to explain the experimental observations. AU - Georgios Katsaros AU - Costantini, Giovanni AU - Stoffel, Mathieu AU - Esteban, Rubén AU - Bittner, Alexander M AU - Rastelli, Armando AU - Denker, Ulrich AU - Schmidt, Oliver G AU - Kern, Klaus ID - 1742 IS - 19 JF - Physical Review B - Condensed Matter and Materials Physics TI - Kinetic origin of island intermixing during the growth of Ge on Si (001) VL - 72 ER -