---
_id: '1742'
abstract:
- lang: eng
  text: The effects of substrate temperature, growth rate, and postgrowth annealing
    on the composition of Ge islands grown on Si(001) were investigated with a combination
    of selective wet chemical etching and atomic force microscopy. A simple kinetic
    model comprising only surface diffusion processes can explain all the experimentally
    observed compositional profiles for pyramid and dome islands grown in the 560-620°C
    range. From this model three-dimensional compositional maps were extracted. By
    performing annealing experiments a change in the composition of the domes was
    observed. This could be explained as the result of the islands' movement induced
    by alloying-driven energy minimization. Also in this case kinetically hindered
    bulk diffusion processes are not needed to explain the experimental observations.
acknowledgement: G. K. acknowledges the financial support of DAAD (Deutscher Akademischer
  Austausch Dienst)
author:
- first_name: Georgios
  full_name: Georgios Katsaros
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
- first_name: Giovanni
  full_name: Costantini, Giovanni
  last_name: Costantini
- first_name: Mathieu
  full_name: Stoffel, Mathieu
  last_name: Stoffel
- first_name: Rubén
  full_name: Esteban, Rubén
  last_name: Esteban
- first_name: Alexander
  full_name: Bittner, Alexander M
  last_name: Bittner
- first_name: Armando
  full_name: Rastelli, Armando
  last_name: Rastelli
- first_name: Ulrich
  full_name: Denker, Ulrich
  last_name: Denker
- first_name: Oliver
  full_name: Schmidt, Oliver G
  last_name: Schmidt
- first_name: Klaus
  full_name: Kern, Klaus
  last_name: Kern
citation:
  ama: Katsaros G, Costantini G, Stoffel M, et al. Kinetic origin of island intermixing
    during the growth of Ge on Si (001). <i>Physical Review B - Condensed Matter and
    Materials Physics</i>. 2005;72(19). doi:<a href="https://doi.org/10.1103/PhysRevB.72.195320">10.1103/PhysRevB.72.195320</a>
  apa: Katsaros, G., Costantini, G., Stoffel, M., Esteban, R., Bittner, A., Rastelli,
    A., … Kern, K. (2005). Kinetic origin of island intermixing during the growth
    of Ge on Si (001). <i>Physical Review B - Condensed Matter and Materials Physics</i>.
    American Physical Society. <a href="https://doi.org/10.1103/PhysRevB.72.195320">https://doi.org/10.1103/PhysRevB.72.195320</a>
  chicago: Katsaros, Georgios, Giovanni Costantini, Mathieu Stoffel, Rubén Esteban,
    Alexander Bittner, Armando Rastelli, Ulrich Denker, Oliver Schmidt, and Klaus
    Kern. “Kinetic Origin of Island Intermixing during the Growth of Ge on Si (001).”
    <i>Physical Review B - Condensed Matter and Materials Physics</i>. American Physical
    Society, 2005. <a href="https://doi.org/10.1103/PhysRevB.72.195320">https://doi.org/10.1103/PhysRevB.72.195320</a>.
  ieee: G. Katsaros <i>et al.</i>, “Kinetic origin of island intermixing during the
    growth of Ge on Si (001),” <i>Physical Review B - Condensed Matter and Materials
    Physics</i>, vol. 72, no. 19. American Physical Society, 2005.
  ista: Katsaros G, Costantini G, Stoffel M, Esteban R, Bittner A, Rastelli A, Denker
    U, Schmidt O, Kern K. 2005. Kinetic origin of island intermixing during the growth
    of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics.
    72(19).
  mla: Katsaros, Georgios, et al. “Kinetic Origin of Island Intermixing during the
    Growth of Ge on Si (001).” <i>Physical Review B - Condensed Matter and Materials
    Physics</i>, vol. 72, no. 19, American Physical Society, 2005, doi:<a href="https://doi.org/10.1103/PhysRevB.72.195320">10.1103/PhysRevB.72.195320</a>.
  short: G. Katsaros, G. Costantini, M. Stoffel, R. Esteban, A. Bittner, A. Rastelli,
    U. Denker, O. Schmidt, K. Kern, Physical Review B - Condensed Matter and Materials
    Physics 72 (2005).
date_created: 2018-12-11T11:53:46Z
date_published: 2005-11-15T00:00:00Z
date_updated: 2021-01-12T06:52:55Z
day: '15'
doi: 10.1103/PhysRevB.72.195320
extern: 1
intvolume: '        72'
issue: '19'
month: '11'
publication: Physical Review B - Condensed Matter and Materials Physics
publication_status: published
publisher: American Physical Society
publist_id: '5382'
quality_controlled: 0
status: public
title: Kinetic origin of island intermixing during the growth of Ge on Si (001)
type: journal_article
volume: 72
year: '2005'
...