@misc{17444,
  abstract     = {The first wafer-scale growth of site-controlled Ge/Si nanowires is reported by Georgios Katsaros, Jian-Jun Zhang, and co-workers in article number 1906523. They are highly uniform and their position, distance, length, and even square- or L-shaped structures can all be precisely controlled. The electrically tunable spin-orbit coupling demonstrated by transport measurements and the charge sensing between quantum dots in closely spaced wires open a path toward scalable qubit devices using nanowires on silicon.},
  author       = {Gao, Fei and Wang, Jian‐Huan and Watzinger, Hannes and Hu, Hao and Rančić, Marko J. and Zhang, Jie‐Yin and Wang, Ting and Yao, Yuan and Wang, Gui‐Lei and Kukucka, Josip and Vukušić, Lada and Kloeffel, Christoph and Loss, Daniel and Liu, Feng and Katsaros, Georgios and Zhang, Jian‐Jun},
  booktitle    = {Advanced Materials},
  issn         = {1521-4095},
  number       = {16},
  publisher    = {Wiley},
  title        = {{Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020)}},
  doi          = {10.1002/adma.202070122},
  volume       = {32},
  year         = {2020},
}