Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020) Gao, Fei Wang, Jian‐Huan Watzinger, Hannes Hu, Hao Rančić, Marko J. Zhang, Jie‐Yin Wang, Ting Yao, Yuan Wang, Gui‐Lei Kukucka, Josip Vukušić, Lada ; https://orcid.org/0000-0003-2424-8636 Kloeffel, Christoph Loss, Daniel Liu, Feng Katsaros, Georgios ; https://orcid.org/0000-0001-8342-202X Zhang, Jian‐Jun ddc:530 The first wafer-scale growth of site-controlled Ge/Si nanowires is reported by Georgios Katsaros, Jian-Jun Zhang, and co-workers in article number 1906523. They are highly uniform and their position, distance, length, and even square- or L-shaped structures can all be precisely controlled. The electrically tunable spin-orbit coupling demonstrated by transport measurements and the charge sensing between quantum dots in closely spaced wires open a path toward scalable qubit devices using nanowires on silicon. Wiley 2020 info:eu-repo/semantics/other doc-type:other other_academic_publication other_academic_publication https://research-explorer.ista.ac.at/record/17444 Gao F, Wang J, Watzinger H, et al. <i>Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020)</i>. Vol 32. Wiley; 2020. doi:<a href="https://doi.org/10.1002/adma.202070122">10.1002/adma.202070122</a> eng info:eu-repo/semantics/altIdentifier/doi/10.1002/adma.202070122 info:eu-repo/semantics/altIdentifier/issn/0935-9648 info:eu-repo/semantics/altIdentifier/e-issn/1521-4095 info:eu-repo/semantics/openAccess