thesis published yes Fei Gao author Jian‐Huan Wang author Hannes Watzinger author 35DF8E50-F248-11E8-B48F-1D18A9856A87 Hao Hu author Marko J. Rančić author Jie‐Yin Zhang author Ting Wang author Yuan Yao author Gui‐Lei Wang author Josip Kukucka author 3F5D8856-F248-11E8-B48F-1D18A9856A87 Lada Vukušić author 31E9F056-F248-11E8-B48F-1D18A9856A870000-0003-2424-8636 Christoph Kloeffel author Daniel Loss author Feng Liu author Georgios Katsaros author 38DB5788-F248-11E8-B48F-1D18A9856A870000-0001-8342-202X Jian‐Jun Zhang author GeKa department The first wafer-scale growth of site-controlled Ge/Si nanowires is reported by Georgios Katsaros, Jian-Jun Zhang, and co-workers in article number 1906523. They are highly uniform and their position, distance, length, and even square- or L-shaped structures can all be precisely controlled. The electrically tunable spin-orbit coupling demonstrated by transport measurements and the charge sensing between quantum dots in closely spaced wires open a path toward scalable qubit devices using nanowires on silicon. Wiley2020 eng 0935-9648 1521-409510.1002/adma.202070122 3216 https://research-explorer.ista.ac.at/record/7541 Gao, Fei, et al. “Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020).” <i>Advanced Materials</i>, vol. 32, no. 16, 2070122, Wiley, 2020, doi:<a href="https://doi.org/10.1002/adma.202070122">10.1002/adma.202070122</a>. Gao, Fei, Jian‐Huan Wang, Hannes Watzinger, Hao Hu, Marko J. Rančić, Jie‐Yin Zhang, Ting Wang, et al. <i>Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020)</i>. <i>Advanced Materials</i>. Vol. 32. Wiley, 2020. <a href="https://doi.org/10.1002/adma.202070122">https://doi.org/10.1002/adma.202070122</a>. Gao, F., Wang, J., Watzinger, H., Hu, H., Rančić, M. J., Zhang, J., … Zhang, J. (2020). <i>Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020)</i>. <i>Advanced Materials</i> (Vol. 32). Wiley. <a href="https://doi.org/10.1002/adma.202070122">https://doi.org/10.1002/adma.202070122</a> F. Gao, J. Wang, H. Watzinger, H. Hu, M.J. Rančić, J. Zhang, T. Wang, Y. Yao, G. Wang, J. Kukucka, L. Vukušić, C. Kloeffel, D. Loss, F. Liu, G. Katsaros, J. Zhang, Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020), Wiley, 2020. F. Gao <i>et al.</i>, <i>Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020)</i>, vol. 32, no. 16. Wiley, 2020. Gao F, Wang J, Watzinger H, et al. <i>Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020)</i>. Vol 32. Wiley; 2020. doi:<a href="https://doi.org/10.1002/adma.202070122">10.1002/adma.202070122</a> Gao F, Wang J, Watzinger H, Hu H, Rančić MJ, Zhang J, Wang T, Yao Y, Wang G, Kukucka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang J. 2020. Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020), Wiley,p. 174442024-08-20T08:22:42Z2026-06-18T17:54:47Z