---
_id: '17444'
abstract:
- lang: eng
  text: The first wafer-scale growth of site-controlled Ge/Si nanowires is reported
    by Georgios Katsaros, Jian-Jun Zhang, and co-workers in article number 1906523.
    They are highly uniform and their position, distance, length, and even square-
    or L-shaped structures can all be precisely controlled. The electrically tunable
    spin-orbit coupling demonstrated by transport measurements and the charge sensing
    between quantum dots in closely spaced wires open a path toward scalable qubit
    devices using nanowires on silicon.
article_number: '2070122'
article_processing_charge: No
author:
- first_name: Fei
  full_name: Gao, Fei
  last_name: Gao
- first_name: Jian‐Huan
  full_name: Wang, Jian‐Huan
  last_name: Wang
- first_name: Hannes
  full_name: Watzinger, Hannes
  id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
  last_name: Watzinger
- first_name: Hao
  full_name: Hu, Hao
  last_name: Hu
- first_name: Marko J.
  full_name: Rančić, Marko J.
  last_name: Rančić
- first_name: Jie‐Yin
  full_name: Zhang, Jie‐Yin
  last_name: Zhang
- first_name: Ting
  full_name: Wang, Ting
  last_name: Wang
- first_name: Yuan
  full_name: Yao, Yuan
  last_name: Yao
- first_name: Gui‐Lei
  full_name: Wang, Gui‐Lei
  last_name: Wang
- first_name: Josip
  full_name: Kukucka, Josip
  id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
  last_name: Kukucka
- first_name: Lada
  full_name: Vukušić, Lada
  id: 31E9F056-F248-11E8-B48F-1D18A9856A87
  last_name: Vukušić
  orcid: 0000-0003-2424-8636
- first_name: Christoph
  full_name: Kloeffel, Christoph
  last_name: Kloeffel
- first_name: Daniel
  full_name: Loss, Daniel
  last_name: Loss
- first_name: Feng
  full_name: Liu, Feng
  last_name: Liu
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
- first_name: Jian‐Jun
  full_name: Zhang, Jian‐Jun
  last_name: Zhang
citation:
  ama: 'Gao F, Wang J, Watzinger H, et al. <i>Nanowires: Site‐controlled Uniform Ge/Si
    Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020)</i>.
    Vol 32. Wiley; 2020. doi:<a href="https://doi.org/10.1002/adma.202070122">10.1002/adma.202070122</a>'
  apa: 'Gao, F., Wang, J., Watzinger, H., Hu, H., Rančić, M. J., Zhang, J., … Zhang,
    J. (2020). <i>Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically
    tunable spin–orbit coupling (Adv. Mater. 16/2020)</i>. <i>Advanced Materials</i>
    (Vol. 32). Wiley. <a href="https://doi.org/10.1002/adma.202070122">https://doi.org/10.1002/adma.202070122</a>'
  chicago: 'Gao, Fei, Jian‐Huan Wang, Hannes Watzinger, Hao Hu, Marko J. Rančić, Jie‐Yin
    Zhang, Ting Wang, et al. <i>Nanowires: Site‐controlled Uniform Ge/Si Hut Wires
    with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020)</i>. <i>Advanced
    Materials</i>. Vol. 32. Wiley, 2020. <a href="https://doi.org/10.1002/adma.202070122">https://doi.org/10.1002/adma.202070122</a>.'
  ieee: 'F. Gao <i>et al.</i>, <i>Nanowires: Site‐controlled uniform Ge/Si Hut wires
    with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020)</i>, vol.
    32, no. 16. Wiley, 2020.'
  ista: 'Gao F, Wang J, Watzinger H, Hu H, Rančić MJ, Zhang J, Wang T, Yao Y, Wang
    G, Kukucka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang J. 2020.
    Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit
    coupling (Adv. Mater. 16/2020), Wiley,p.'
  mla: 'Gao, Fei, et al. “Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with
    Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020).” <i>Advanced Materials</i>,
    vol. 32, no. 16, 2070122, Wiley, 2020, doi:<a href="https://doi.org/10.1002/adma.202070122">10.1002/adma.202070122</a>.'
  short: 'F. Gao, J. Wang, H. Watzinger, H. Hu, M.J. Rančić, J. Zhang, T. Wang, Y.
    Yao, G. Wang, J. Kukucka, L. Vukušić, C. Kloeffel, D. Loss, F. Liu, G. Katsaros,
    J. Zhang, Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with Electrically
    Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020), Wiley, 2020.'
date_created: 2024-08-20T08:22:42Z
date_published: 2020-04-23T00:00:00Z
date_updated: 2026-06-18T17:54:47Z
day: '23'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.1002/adma.202070122
fulldoi: https://doi.org/10.1002/adma.202070122
intvolume: '        32'
issue: '16'
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://doi.org/10.1002/adma.202070122
month: '04'
oa: 1
oa_version: Published Version
publication: Advanced Materials
publication_identifier:
  eissn:
  - 1521-4095
  issn:
  - 0935-9648
publication_status: published
publisher: Wiley
quality_controlled: '1'
related_material:
  record:
  - id: '7541'
    relation: other
    status: public
status: public
title: 'Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable
  spin–orbit coupling (Adv. Mater. 16/2020)'
type: other_academic_publication
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 32
year: '2020'
...