{"month":"09","year":"2010","publisher":"American Chemical Society","day":"08","quality_controlled":0,"title":"Quantum transport in GaN/AlN double-barrier heterostructure nanowires","main_file_link":[{"url":"http://arxiv.org/abs/1005.3637","open_access":"1"}],"intvolume":"        10","date_published":"2010-09-08T00:00:00Z","extern":1,"citation":{"chicago":"Songmuang, Rudeeson, Georgios Katsaros, Eva Monroy, Panayotis Spathis, Catherine Bougerol, Massimo Mongillo, and Silvano De Franceschi. “Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires.” <i>Nano Letters</i>. American Chemical Society, 2010. <a href=\"https://doi.org/10.1021/nl1017578\">https://doi.org/10.1021/nl1017578</a>.","apa":"Songmuang, R., Katsaros, G., Monroy, E., Spathis, P., Bougerol, C., Mongillo, M., &#38; De Franceschi, S. (2010). Quantum transport in GaN/AlN double-barrier heterostructure nanowires. <i>Nano Letters</i>. American Chemical Society. <a href=\"https://doi.org/10.1021/nl1017578\">https://doi.org/10.1021/nl1017578</a>","ista":"Songmuang R, Katsaros G, Monroy E, Spathis P, Bougerol C, Mongillo M, De Franceschi S. 2010. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 10(9), 3545–3550.","short":"R. Songmuang, G. Katsaros, E. Monroy, P. Spathis, C. Bougerol, M. Mongillo, S. De Franceschi, Nano Letters 10 (2010) 3545–3550.","mla":"Songmuang, Rudeeson, et al. “Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires.” <i>Nano Letters</i>, vol. 10, no. 9, American Chemical Society, 2010, pp. 3545–50, doi:<a href=\"https://doi.org/10.1021/nl1017578\">10.1021/nl1017578</a>.","ama":"Songmuang R, Katsaros G, Monroy E, et al. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. <i>Nano Letters</i>. 2010;10(9):3545-3550. doi:<a href=\"https://doi.org/10.1021/nl1017578\">10.1021/nl1017578</a>","ieee":"R. Songmuang <i>et al.</i>, “Quantum transport in GaN/AlN double-barrier heterostructure nanowires,” <i>Nano Letters</i>, vol. 10, no. 9. American Chemical Society, pp. 3545–3550, 2010."},"_id":"1753","oa":1,"type":"journal_article","page":"3545 - 3550","doi":"10.1021/nl1017578","publication_status":"published","issue":"9","publication":"Nano Letters","acknowledgement":"This research was partly funded by the Agence Nationale de la Recherche through the COHESION project. G.K. acknowledges further support from the Deutsche Forschungsgemeinschaft (Grant KA 2922/1-1)","status":"public","date_created":"2018-12-11T11:53:49Z","author":[{"first_name":"Rudeeson","last_name":"Songmuang","full_name":"Songmuang, Rudeeson"},{"full_name":"Georgios Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","first_name":"Georgios","last_name":"Katsaros"},{"first_name":"Eva","last_name":"Monroy","full_name":"Monroy, Eva"},{"first_name":"Panayotis","last_name":"Spathis","full_name":"Spathis, Panayotis N"},{"first_name":"Catherine","last_name":"Bougerol","full_name":"Bougerol, Catherine"},{"first_name":"Massimo","last_name":"Mongillo","full_name":"Mongillo, Massimo"},{"full_name":"De Franceschi, Silvano","first_name":"Silvano","last_name":"De Franceschi"}],"volume":10,"abstract":[{"lang":"eng","text":"We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of ∼100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN dot in between. In the case of a 6 nm thick dot and 2 nm thick barriers, we observe characteristic signatures of Coulomb-blockaded transport in single quantum dots with discrete energy states. For thinner dots and barriers, Coulomb-blockade effects do not play a significant role while the onset of resonant tunneling via the confined quantum levels is accompanied by a negative differential resistance surviving up to ∼150 K."}],"date_updated":"2021-01-12T06:52:59Z","publist_id":"5371"}