---
res:
  bibo_abstract:
  - We report on a technique enabling electrical control of the contact silicidation
    process in silicon nanowire devices. Undoped silicon nanowires were contacted
    by pairs of nickel electrodes and each contact was selectively silicided by means
    of the Joule effect. By a realtime monitoring of the nanowire electrical resistance
    during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel-
    silicide devices with controlled silicon channel length down to 8 nm. @eng
  bibo_authorlist:
  - foaf_Person:
      foaf_givenName: Massimo
      foaf_name: Mongillo, Massimo
      foaf_surname: Mongillo
  - foaf_Person:
      foaf_givenName: Panayotis
      foaf_name: Spathis, Panayotis
      foaf_surname: Spathis
  - foaf_Person:
      foaf_givenName: Georgios
      foaf_name: Katsaros, Georgios
      foaf_surname: Katsaros
      foaf_workInfoHomepage: http://www.librecat.org/personId=38DB5788-F248-11E8-B48F-1D18A9856A87
  - foaf_Person:
      foaf_givenName: Pascal
      foaf_name: Gentile, Pascal
      foaf_surname: Gentile
  - foaf_Person:
      foaf_givenName: Marc
      foaf_name: Sanquer, Marc
      foaf_surname: Sanquer
  - foaf_Person:
      foaf_givenName: Silvano
      foaf_name: De Franceschi, Silvano
      foaf_surname: De Franceschi
  bibo_doi: 10.1021/nn202524j
  bibo_issue: '9'
  bibo_volume: 5
  dct_date: 2011^xs_gYear
  dct_language: eng
  dct_publisher: American Chemical Society@
  dct_title: Joule-assisted silicidation for short-channel silicon nanowire devices@
...