Joule-assisted silicidation for short-channel silicon nanowire devices Mongillo, Massimo Spathis, Panayotis Katsaros, Georgios Gentile, Pascal Sanquer, Marc De Franceschi, Silvano We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel- silicide devices with controlled silicon channel length down to 8 nm. American Chemical Society 2011 info:eu-repo/semantics/article doc-type:article text http://purl.org/coar/resource_type/c_2df8fbb1 https://research-explorer.ista.ac.at/record/1754 Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. Joule-assisted silicidation for short-channel silicon nanowire devices. <i>ACS Nano</i>. 2011;5(9):7117-7123. doi:<a href="https://doi.org/10.1021/nn202524j">10.1021/nn202524j</a> eng info:eu-repo/semantics/altIdentifier/doi/10.1021/nn202524j info:eu-repo/semantics/altIdentifier/arxiv/1110.5668 info:eu-repo/semantics/openAccess