{"date_published":"2011-09-27T00:00:00Z","oa":1,"title":"Joule-assisted silicidation for short-channel silicon nanowire devices","author":[{"full_name":"Mongillo, Massimo","last_name":"Mongillo","first_name":"Massimo"},{"last_name":"Spathis","full_name":"Spathis, Panayotis","first_name":"Panayotis"},{"first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","full_name":"Katsaros, Georgios"},{"first_name":"Pascal","full_name":"Gentile, Pascal","last_name":"Gentile"},{"first_name":"Marc","full_name":"Sanquer, Marc","last_name":"Sanquer"},{"full_name":"De Franceschi, Silvano","last_name":"De Franceschi","first_name":"Silvano"}],"_id":"1754","extern":"1","acknowledgement":"This work was supported by the Agence Nationale de la Recherche (ANR) through the ACCESS and COHESION projects and by the European Commission through the Chemtronics program MEST-CT-2005-020513","status":"public","language":[{"iso":"eng"}],"quality_controlled":"1","date_updated":"2021-01-12T06:52:59Z","external_id":{"arxiv":["1110.5668"]},"user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","month":"09","intvolume":"         5","type":"journal_article","oa_version":"Preprint","publication_status":"published","issue":"9","publisher":"American Chemical Society","main_file_link":[{"open_access":"1","url":"http://arxiv.org/abs/1110.5668"}],"volume":5,"page":"7117 - 7123","year":"2011","abstract":[{"lang":"eng","text":"We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel- silicide devices with controlled silicon channel length down to 8 nm. "}],"doi":"10.1021/nn202524j","citation":{"apa":"Mongillo, M., Spathis, P., Katsaros, G., Gentile, P., Sanquer, M., &#38; De Franceschi, S. (2011). Joule-assisted silicidation for short-channel silicon nanowire devices. <i>ACS Nano</i>. American Chemical Society. <a href=\"https://doi.org/10.1021/nn202524j\">https://doi.org/10.1021/nn202524j</a>","chicago":"Mongillo, Massimo, Panayotis Spathis, Georgios Katsaros, Pascal Gentile, Marc Sanquer, and Silvano De Franceschi. “Joule-Assisted Silicidation for Short-Channel Silicon Nanowire Devices.” <i>ACS Nano</i>. American Chemical Society, 2011. <a href=\"https://doi.org/10.1021/nn202524j\">https://doi.org/10.1021/nn202524j</a>.","ieee":"M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, M. Sanquer, and S. De Franceschi, “Joule-assisted silicidation for short-channel silicon nanowire devices,” <i>ACS Nano</i>, vol. 5, no. 9. American Chemical Society, pp. 7117–7123, 2011.","ama":"Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. Joule-assisted silicidation for short-channel silicon nanowire devices. <i>ACS Nano</i>. 2011;5(9):7117-7123. doi:<a href=\"https://doi.org/10.1021/nn202524j\">10.1021/nn202524j</a>","ista":"Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. 2011. Joule-assisted silicidation for short-channel silicon nanowire devices. ACS Nano. 5(9), 7117–7123.","mla":"Mongillo, Massimo, et al. “Joule-Assisted Silicidation for Short-Channel Silicon Nanowire Devices.” <i>ACS Nano</i>, vol. 5, no. 9, American Chemical Society, 2011, pp. 7117–23, doi:<a href=\"https://doi.org/10.1021/nn202524j\">10.1021/nn202524j</a>.","short":"M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, M. Sanquer, S. De Franceschi, ACS Nano 5 (2011) 7117–7123."},"date_created":"2018-12-11T11:53:50Z","publication":"ACS Nano","publist_id":"5370","day":"27"}