---
_id: '1754'
abstract:
- lang: eng
  text: 'We report on a technique enabling electrical control of the contact silicidation
    process in silicon nanowire devices. Undoped silicon nanowires were contacted
    by pairs of nickel electrodes and each contact was selectively silicided by means
    of the Joule effect. By a realtime monitoring of the nanowire electrical resistance
    during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel-
    silicide devices with controlled silicon channel length down to 8 nm. '
acknowledgement: This work was supported by the Agence Nationale de la Recherche (ANR)
  through the ACCESS and COHESION projects and by the European Commission through
  the Chemtronics program MEST-CT-2005-020513
arxiv: 1
author:
- first_name: Massimo
  full_name: Mongillo, Massimo
  last_name: Mongillo
- first_name: Panayotis
  full_name: Spathis, Panayotis
  last_name: Spathis
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
- first_name: Pascal
  full_name: Gentile, Pascal
  last_name: Gentile
- first_name: Marc
  full_name: Sanquer, Marc
  last_name: Sanquer
- first_name: Silvano
  full_name: De Franceschi, Silvano
  last_name: De Franceschi
citation:
  ama: Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. Joule-assisted
    silicidation for short-channel silicon nanowire devices. <i>ACS Nano</i>. 2011;5(9):7117-7123.
    doi:<a href="https://doi.org/10.1021/nn202524j">10.1021/nn202524j</a>
  apa: Mongillo, M., Spathis, P., Katsaros, G., Gentile, P., Sanquer, M., &#38; De
    Franceschi, S. (2011). Joule-assisted silicidation for short-channel silicon nanowire
    devices. <i>ACS Nano</i>. American Chemical Society. <a href="https://doi.org/10.1021/nn202524j">https://doi.org/10.1021/nn202524j</a>
  chicago: Mongillo, Massimo, Panayotis Spathis, Georgios Katsaros, Pascal Gentile,
    Marc Sanquer, and Silvano De Franceschi. “Joule-Assisted Silicidation for Short-Channel
    Silicon Nanowire Devices.” <i>ACS Nano</i>. American Chemical Society, 2011. <a
    href="https://doi.org/10.1021/nn202524j">https://doi.org/10.1021/nn202524j</a>.
  ieee: M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, M. Sanquer, and S. De Franceschi,
    “Joule-assisted silicidation for short-channel silicon nanowire devices,” <i>ACS
    Nano</i>, vol. 5, no. 9. American Chemical Society, pp. 7117–7123, 2011.
  ista: Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S.
    2011. Joule-assisted silicidation for short-channel silicon nanowire devices.
    ACS Nano. 5(9), 7117–7123.
  mla: Mongillo, Massimo, et al. “Joule-Assisted Silicidation for Short-Channel Silicon
    Nanowire Devices.” <i>ACS Nano</i>, vol. 5, no. 9, American Chemical Society,
    2011, pp. 7117–23, doi:<a href="https://doi.org/10.1021/nn202524j">10.1021/nn202524j</a>.
  short: M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, M. Sanquer, S. De Franceschi,
    ACS Nano 5 (2011) 7117–7123.
date_created: 2018-12-11T11:53:50Z
date_published: 2011-09-27T00:00:00Z
date_updated: 2021-01-12T06:52:59Z
day: '27'
doi: 10.1021/nn202524j
extern: '1'
external_id:
  arxiv:
  - '1110.5668'
intvolume: '         5'
issue: '9'
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: http://arxiv.org/abs/1110.5668
month: '09'
oa: 1
oa_version: Preprint
page: 7117 - 7123
publication: ACS Nano
publication_status: published
publisher: American Chemical Society
publist_id: '5370'
quality_controlled: '1'
status: public
title: Joule-assisted silicidation for short-channel silicon nanowire devices
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 5
year: '2011'
...