--- res: bibo_abstract: - Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existence of a preferential base width for longitudinal expansion, in quantitative agreement with the experimental findings. Despite the absence of intentional doping, the first transistor-type devices made from single wires show low-resistive electrical contacts and single-hole transport at sub-Kelvin temperatures. In view of their exceptionally small and self-defined cross section, these Ge wires hold promise for the realization of hole systems with exotic properties and provide a new development route for silicon-based nanoelectronics.@eng bibo_authorlist: - foaf_Person: foaf_givenName: Jianjun foaf_name: Zhang, Jianjun foaf_surname: Zhang - foaf_Person: foaf_givenName: Georgios foaf_name: Georgios Katsaros foaf_surname: Katsaros foaf_workInfoHomepage: http://www.librecat.org/personId=38DB5788-F248-11E8-B48F-1D18A9856A87 - foaf_Person: foaf_givenName: Francesco foaf_name: Montalenti, Francesco foaf_surname: Montalenti - foaf_Person: foaf_givenName: Daniele foaf_name: Scopece, Daniele foaf_surname: Scopece - foaf_Person: foaf_givenName: Roman foaf_name: Rezaev, Roman O foaf_surname: Rezaev - foaf_Person: foaf_givenName: Christine foaf_name: Mickel, Christine H foaf_surname: Mickel - foaf_Person: foaf_givenName: Bernd foaf_name: Rellinghaus, Bernd foaf_surname: Rellinghaus - foaf_Person: foaf_givenName: Leo foaf_name: Miglio, Leo P foaf_surname: Miglio - foaf_Person: foaf_givenName: Silvano foaf_name: De Franceschi, Silvano foaf_surname: De Franceschi - foaf_Person: foaf_givenName: Armando foaf_name: Rastelli, Armando foaf_surname: Rastelli - foaf_Person: foaf_givenName: Oliver foaf_name: Schmidt, Oliver G foaf_surname: Schmidt bibo_doi: 10.1103/PhysRevLett.109.085502 bibo_issue: '8' bibo_volume: 109 dct_date: 2012^xs_gYear dct_publisher: American Physical Society@ dct_title: Monolithic growth of ultrathin Ge nanowires on Si(001) @ ...