---
res:
  bibo_abstract:
  - We replace the established aluminium gates for the formation of quantum dots in
    silicon with gates made from palladium. We study the morphology of both aluminium
    and palladium gates with transmission electron microscopy. The native aluminium
    oxide is found to be formed all around the aluminium gates, which could lead to
    the formation of unintentional dots. Therefore, we report on a novel fabrication
    route that replaces aluminium and its native oxide by palladium with atomic-layer-deposition-grown
    aluminium oxide. Using this approach, we show the formation of low-disorder gate-defined
    quantum dots, which are reproducibly fabricated. Furthermore, palladium enables
    us to further shrink the gate design, allowing us to perform electron transport
    measurements in the few-electron regime in devices comprising only two gate layers,
    a major technological advancement. It remains to be seen, whether the introduction
    of palladium gates can improve the excellent results on electron and nuclear spin
    qubits defined with an aluminium gate stack.@eng
  bibo_authorlist:
  - foaf_Person:
      foaf_givenName: Matthias
      foaf_name: Brauns, Matthias
      foaf_surname: Brauns
      foaf_workInfoHomepage: http://www.librecat.org/personId=33F94E3C-F248-11E8-B48F-1D18A9856A87
  - foaf_Person:
      foaf_givenName: Sergey
      foaf_name: Amitonov, Sergey
      foaf_surname: Amitonov
  - foaf_Person:
      foaf_givenName: Paul
      foaf_name: Spruijtenburg, Paul
      foaf_surname: Spruijtenburg
  - foaf_Person:
      foaf_givenName: Floris
      foaf_name: Zwanenburg, Floris
      foaf_surname: Zwanenburg
  bibo_doi: 10.1038/s41598-018-24004-y
  bibo_issue: '1'
  bibo_volume: 8
  dct_date: 2018^xs_gYear
  dct_identifier:
  - UT:000429404300013
  dct_language: eng
  dct_publisher: Nature Publishing Group@
  dct_title: Palladium gates for reproducible quantum dots in silicon@
...