{"_id":"5816","arxiv":1,"title":"30 GHz-voltage controlled oscillator operating at 4 K","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","date_updated":"2026-01-15T23:30:23Z","oa_version":"Preprint","status":"public","publication":"Review of Scientific Instruments","department":[{"_id":"GeKa"}],"intvolume":"        89","day":"01","date_created":"2019-01-10T14:22:23Z","article_processing_charge":"No","main_file_link":[{"open_access":"1","url":"https://arxiv.org/abs/1804.09522"}],"date_published":"2018-11-01T00:00:00Z","author":[{"last_name":"Hollmann","first_name":"Arne","full_name":"Hollmann, Arne"},{"orcid":"0000-0002-7197-4801","first_name":"Daniel","full_name":"Jirovec, Daniel","last_name":"Jirovec","id":"4C473F58-F248-11E8-B48F-1D18A9856A87"},{"last_name":"Kucharski","full_name":"Kucharski, Maciej","first_name":"Maciej"},{"full_name":"Kissinger, Dietmar","first_name":"Dietmar","last_name":"Kissinger"},{"full_name":"Fischer, Gunter","first_name":"Gunter","last_name":"Fischer"},{"last_name":"Schreiber","first_name":"Lars R.","full_name":"Schreiber, Lars R."}],"publisher":"AIP Publishing","year":"2018","month":"11","citation":{"ista":"Hollmann A, Jirovec D, Kucharski M, Kissinger D, Fischer G, Schreiber LR. 2018. 30 GHz-voltage controlled oscillator operating at 4 K. Review of Scientific Instruments. 89(11), 114701.","apa":"Hollmann, A., Jirovec, D., Kucharski, M., Kissinger, D., Fischer, G., &#38; Schreiber, L. R. (2018). 30 GHz-voltage controlled oscillator operating at 4 K. <i>Review of Scientific Instruments</i>. AIP Publishing. <a href=\"https://doi.org/10.1063/1.5038258\">https://doi.org/10.1063/1.5038258</a>","chicago":"Hollmann, Arne, Daniel Jirovec, Maciej Kucharski, Dietmar Kissinger, Gunter Fischer, and Lars R. Schreiber. “30 GHz-Voltage Controlled Oscillator Operating at 4 K.” <i>Review of Scientific Instruments</i>. AIP Publishing, 2018. <a href=\"https://doi.org/10.1063/1.5038258\">https://doi.org/10.1063/1.5038258</a>.","ama":"Hollmann A, Jirovec D, Kucharski M, Kissinger D, Fischer G, Schreiber LR. 30 GHz-voltage controlled oscillator operating at 4 K. <i>Review of Scientific Instruments</i>. 2018;89(11). doi:<a href=\"https://doi.org/10.1063/1.5038258\">10.1063/1.5038258</a>","short":"A. Hollmann, D. Jirovec, M. Kucharski, D. Kissinger, G. Fischer, L.R. Schreiber, Review of Scientific Instruments 89 (2018).","mla":"Hollmann, Arne, et al. “30 GHz-Voltage Controlled Oscillator Operating at 4 K.” <i>Review of Scientific Instruments</i>, vol. 89, no. 11, 114701, AIP Publishing, 2018, doi:<a href=\"https://doi.org/10.1063/1.5038258\">10.1063/1.5038258</a>.","ieee":"A. Hollmann, D. Jirovec, M. Kucharski, D. Kissinger, G. Fischer, and L. R. Schreiber, “30 GHz-voltage controlled oscillator operating at 4 K,” <i>Review of Scientific Instruments</i>, vol. 89, no. 11. AIP Publishing, 2018."},"related_material":{"record":[{"relation":"dissertation_contains","status":"public","id":"10058"}]},"article_number":"114701","issue":"11","isi":1,"doi":"10.1063/1.5038258","volume":89,"publication_status":"published","quality_controlled":"1","language":[{"iso":"eng"}],"abstract":[{"text":"Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and therefore a scalable quantum computer architecture. To solve signal-line bandwidth and fan-out problems, microwave sources required for qubit manipulation might be embedded close to the qubit chip, typically operating at temperatures below 4 K. Here, we perform the first low temperature measurements of a 130 nm BiCMOS based SiGe voltage controlled oscillator at cryogenic temperature. We determined the frequency and output power dependence on temperature and magnetic field up to 5 T and measured the temperature influence on its noise performance. The device maintains its full functionality from 300 K to 4 K. The carrier frequency at 4 K increases by 3% with respect to the carrier frequency at 300 K, and the output power at 4 K increases by 10 dB relative to the output power at 300 K. The frequency tuning range of approximately 20% remains unchanged between 300 K and 4 K. In an in-plane magnetic field of 5 T, the carrier frequency shifts by only 0.02% compared to the frequency at zero magnetic field.","lang":"eng"}],"external_id":{"isi":["000451735700054"],"arxiv":["1804.09522"]},"scopus_import":"1","oa":1,"type":"journal_article","publication_identifier":{"issn":["0034-6748"]}}