{"issue":"11","external_id":{"isi":["000451735700054"],"arxiv":["1804.09522"]},"language":[{"iso":"eng"}],"doi":"10.1063/1.5038258","related_material":{"record":[{"relation":"dissertation_contains","id":"10058","status":"public"}]},"_id":"5816","scopus_import":"1","publisher":"AIP Publishing","article_number":"114701","intvolume":"        89","status":"public","title":"30 GHz-voltage controlled oscillator operating at 4 K","date_created":"2019-01-10T14:22:23Z","publication":"Review of Scientific Instruments","author":[{"last_name":"Hollmann","full_name":"Hollmann, Arne","first_name":"Arne"},{"last_name":"Jirovec","id":"4C473F58-F248-11E8-B48F-1D18A9856A87","first_name":"Daniel","orcid":"0000-0002-7197-4801","full_name":"Jirovec, Daniel"},{"last_name":"Kucharski","full_name":"Kucharski, Maciej","first_name":"Maciej"},{"full_name":"Kissinger, Dietmar","first_name":"Dietmar","last_name":"Kissinger"},{"last_name":"Fischer","first_name":"Gunter","full_name":"Fischer, Gunter"},{"first_name":"Lars R.","full_name":"Schreiber, Lars R.","last_name":"Schreiber"}],"quality_controlled":"1","isi":1,"date_updated":"2025-07-01T22:30:19Z","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","month":"11","arxiv":1,"publication_status":"published","oa":1,"oa_version":"Preprint","day":"01","date_published":"2018-11-01T00:00:00Z","abstract":[{"lang":"eng","text":"Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and therefore a scalable quantum computer architecture. To solve signal-line bandwidth and fan-out problems, microwave sources required for qubit manipulation might be embedded close to the qubit chip, typically operating at temperatures below 4 K. Here, we perform the first low temperature measurements of a 130 nm BiCMOS based SiGe voltage controlled oscillator at cryogenic temperature. We determined the frequency and output power dependence on temperature and magnetic field up to 5 T and measured the temperature influence on its noise performance. The device maintains its full functionality from 300 K to 4 K. The carrier frequency at 4 K increases by 3% with respect to the carrier frequency at 300 K, and the output power at 4 K increases by 10 dB relative to the output power at 300 K. The frequency tuning range of approximately 20% remains unchanged between 300 K and 4 K. In an in-plane magnetic field of 5 T, the carrier frequency shifts by only 0.02% compared to the frequency at zero magnetic field."}],"department":[{"_id":"GeKa"}],"publication_identifier":{"issn":["0034-6748"]},"volume":89,"article_processing_charge":"No","year":"2018","main_file_link":[{"open_access":"1","url":"https://arxiv.org/abs/1804.09522"}],"type":"journal_article"}