{"article_processing_charge":"No","_id":"5990","external_id":{"isi":["000450232800015"],"arxiv":["1809.08487"]},"oa_version":"Preprint","date_created":"2019-02-14T12:14:26Z","publication_status":"published","author":[{"last_name":"Ridderbos","first_name":"Joost","full_name":"Ridderbos, Joost"},{"full_name":"Brauns, Matthias","id":"33F94E3C-F248-11E8-B48F-1D18A9856A87","last_name":"Brauns","first_name":"Matthias"},{"first_name":"Jie","last_name":"Shen","full_name":"Shen, Jie"},{"full_name":"de Vries, Folkert K.","first_name":"Folkert K.","last_name":"de Vries"},{"full_name":"Li, Ang","first_name":"Ang","last_name":"Li"},{"full_name":"Bakkers, Erik P. A. M.","first_name":"Erik P. A. M.","last_name":"Bakkers"},{"full_name":"Brinkman, Alexander","first_name":"Alexander","last_name":"Brinkman"},{"full_name":"Zwanenburg, Floris A.","first_name":"Floris A.","last_name":"Zwanenburg"}],"quality_controlled":"1","volume":30,"intvolume":" 30","citation":{"apa":"Ridderbos, J., Brauns, M., Shen, J., de Vries, F. K., Li, A., Bakkers, E. P. A. M., … Zwanenburg, F. A. (2018). Josephson effect in a few-hole quantum dot. Advanced Materials. Wiley. https://doi.org/10.1002/adma.201802257","ieee":"J. Ridderbos et al., “Josephson effect in a few-hole quantum dot,” Advanced Materials, vol. 30, no. 44. Wiley, 2018.","ama":"Ridderbos J, Brauns M, Shen J, et al. Josephson effect in a few-hole quantum dot. Advanced Materials. 2018;30(44). doi:10.1002/adma.201802257","short":"J. Ridderbos, M. Brauns, J. Shen, F.K. de Vries, A. Li, E.P.A.M. Bakkers, A. Brinkman, F.A. Zwanenburg, Advanced Materials 30 (2018).","chicago":"Ridderbos, Joost, Matthias Brauns, Jie Shen, Folkert K. de Vries, Ang Li, Erik P. A. M. Bakkers, Alexander Brinkman, and Floris A. Zwanenburg. “Josephson Effect in a Few-Hole Quantum Dot.” Advanced Materials. Wiley, 2018. https://doi.org/10.1002/adma.201802257.","mla":"Ridderbos, Joost, et al. “Josephson Effect in a Few-Hole Quantum Dot.” Advanced Materials, vol. 30, no. 44, 1802257, Wiley, 2018, doi:10.1002/adma.201802257.","ista":"Ridderbos J, Brauns M, Shen J, de Vries FK, Li A, Bakkers EPAM, Brinkman A, Zwanenburg FA. 2018. Josephson effect in a few-hole quantum dot. Advanced Materials. 30(44), 1802257."},"type":"journal_article","month":"11","date_updated":"2023-09-19T14:29:58Z","scopus_import":"1","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","publication_identifier":{"issn":["0935-9648"]},"status":"public","doi":"10.1002/adma.201802257","title":"Josephson effect in a few-hole quantum dot","language":[{"iso":"eng"}],"day":"02","oa":1,"main_file_link":[{"open_access":"1","url":"https://arxiv.org/abs/1809.08487"}],"publication":"Advanced Materials","publisher":"Wiley","department":[{"_id":"GeKa"}],"abstract":[{"text":"A Ge–Si core–shell nanowire is used to realize a Josephson field‐effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single‐particle levels of a strongly coupled quantum dot operating in the few‐hole regime. These results establish Ge–Si nanowires as an important platform for hybrid superconductor–semiconductor physics and Majorana fermions.","lang":"eng"}],"issue":"44","isi":1,"date_published":"2018-11-02T00:00:00Z","year":"2018","article_number":"1802257"}