---
res:
  bibo_abstract:
  - Semiconductor nanowires have been playing a crucial role in the development of
    nanoscale devices for the realization of spin qubits, Majorana fermions, single
    photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled
    nanowires is a prerequisite toward the next generation of devices that will require
    addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up
    self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with
    controllable position, distance, length, and structure is reported. This is achieved
    by a novel growth process that uses a SiGe strain‐relaxation template and can
    be potentially generalized to other material combinations. Transport measurements
    show an electrically tunable spin–orbit coupling, with a spin–orbit length similar
    to that of III–V materials. Also, charge sensing between quantum dots in closely
    spaced wires is observed, which underlines their potential for the realization
    of advanced quantum devices. The reported results open a path toward scalable
    qubit devices using nanowires on silicon.@eng
  bibo_authorlist:
  - foaf_Person:
      foaf_givenName: Fei
      foaf_name: Gao, Fei
      foaf_surname: Gao
  - foaf_Person:
      foaf_givenName: Jian-Huan
      foaf_name: Wang, Jian-Huan
      foaf_surname: Wang
  - foaf_Person:
      foaf_givenName: Hannes
      foaf_name: Watzinger, Hannes
      foaf_surname: Watzinger
      foaf_workInfoHomepage: http://www.librecat.org/personId=35DF8E50-F248-11E8-B48F-1D18A9856A87
  - foaf_Person:
      foaf_givenName: Hao
      foaf_name: Hu, Hao
      foaf_surname: Hu
  - foaf_Person:
      foaf_givenName: Marko J.
      foaf_name: Rančić, Marko J.
      foaf_surname: Rančić
  - foaf_Person:
      foaf_givenName: Jie-Yin
      foaf_name: Zhang, Jie-Yin
      foaf_surname: Zhang
  - foaf_Person:
      foaf_givenName: Ting
      foaf_name: Wang, Ting
      foaf_surname: Wang
  - foaf_Person:
      foaf_givenName: Yuan
      foaf_name: Yao, Yuan
      foaf_surname: Yao
  - foaf_Person:
      foaf_givenName: Gui-Lei
      foaf_name: Wang, Gui-Lei
      foaf_surname: Wang
  - foaf_Person:
      foaf_givenName: Josip
      foaf_name: Kukucka, Josip
      foaf_surname: Kukucka
      foaf_workInfoHomepage: http://www.librecat.org/personId=3F5D8856-F248-11E8-B48F-1D18A9856A87
  - foaf_Person:
      foaf_givenName: Lada
      foaf_name: Vukušić, Lada
      foaf_surname: Vukušić
      foaf_workInfoHomepage: http://www.librecat.org/personId=31E9F056-F248-11E8-B48F-1D18A9856A87
    orcid: 0000-0003-2424-8636
  - foaf_Person:
      foaf_givenName: Christoph
      foaf_name: Kloeffel, Christoph
      foaf_surname: Kloeffel
  - foaf_Person:
      foaf_givenName: Daniel
      foaf_name: Loss, Daniel
      foaf_surname: Loss
  - foaf_Person:
      foaf_givenName: Feng
      foaf_name: Liu, Feng
      foaf_surname: Liu
  - foaf_Person:
      foaf_givenName: Georgios
      foaf_name: Katsaros, Georgios
      foaf_surname: Katsaros
      foaf_workInfoHomepage: http://www.librecat.org/personId=38DB5788-F248-11E8-B48F-1D18A9856A87
    orcid: 0000-0001-8342-202X
  - foaf_Person:
      foaf_givenName: Jian-Jun
      foaf_name: Zhang, Jian-Jun
      foaf_surname: Zhang
  bibo_doi: 10.1002/adma.201906523
  bibo_issue: '16'
  bibo_volume: 32
  dct_date: 2020^xs_gYear
  dct_identifier:
  - UT:000516660900001
  dct_isPartOf:
  - http://id.crossref.org/issn/0935-9648
  dct_language: eng
  dct_publisher: Wiley@
  dct_title: Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit
    coupling@
  fabio_hasPubmedId: '32105375'
...