article published yes Fei Gao author Jian-Huan Wang author Hannes Watzinger author 35DF8E50-F248-11E8-B48F-1D18A9856A87 Hao Hu author Marko J. Rančić author Jie-Yin Zhang author Ting Wang author Yuan Yao author Gui-Lei Wang author Josip Kukucka author 3F5D8856-F248-11E8-B48F-1D18A9856A87 Lada Vukušić author 31E9F056-F248-11E8-B48F-1D18A9856A870000-0003-2424-8636 Christoph Kloeffel author Daniel Loss author Feng Liu author Georgios Katsaros author 38DB5788-F248-11E8-B48F-1D18A9856A870000-0001-8342-202X Jian-Jun Zhang author GeKa department Towards Spin qubits and Majorana fermions in Germanium self assembled hut-wires project Towards scalable hut wire quantum devices project TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS project Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain‐relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin–orbit coupling, with a spin–orbit length similar to that of III–V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon. https://research-explorer.ista.ac.at/download/7541/8782/2020_AdvancedMaterials_Gao.pdf application/pdfno Wiley2020 eng 0935-9648 32105375 00051666090000110.1002/adma.201906523 3216 https://research-explorer.ista.ac.at/record/9222 https://research-explorer.ista.ac.at/record/7996 https://research-explorer.ista.ac.at/record/17444 Gao, Fei, Jian-Huan Wang, Hannes Watzinger, Hao Hu, Marko J. Rančić, Jie-Yin Zhang, Ting Wang, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling.” <i>Advanced Materials</i>. Wiley, 2020. <a href="https://doi.org/10.1002/adma.201906523">https://doi.org/10.1002/adma.201906523</a>. Gao F, Wang J-H, Watzinger H, Hu H, Rančić MJ, Zhang J-Y, Wang T, Yao Y, Wang G-L, Kukucka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang J-J. 2020. Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. Advanced Materials. 32(16), 1906523. F. Gao, J.-H. Wang, H. Watzinger, H. Hu, M.J. Rančić, J.-Y. Zhang, T. Wang, Y. Yao, G.-L. Wang, J. Kukucka, L. Vukušić, C. Kloeffel, D. Loss, F. Liu, G. Katsaros, J.-J. Zhang, Advanced Materials 32 (2020). F. Gao <i>et al.</i>, “Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling,” <i>Advanced Materials</i>, vol. 32, no. 16. Wiley, 2020. Gao, Fei, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling.” <i>Advanced Materials</i>, vol. 32, no. 16, 1906523, Wiley, 2020, doi:<a href="https://doi.org/10.1002/adma.201906523">10.1002/adma.201906523</a>. Gao, F., Wang, J.-H., Watzinger, H., Hu, H., Rančić, M. J., Zhang, J.-Y., … Zhang, J.-J. (2020). Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. <i>Advanced Materials</i>. Wiley. <a href="https://doi.org/10.1002/adma.201906523">https://doi.org/10.1002/adma.201906523</a> Gao F, Wang J-H, Watzinger H, et al. Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. <i>Advanced Materials</i>. 2020;32(16). doi:<a href="https://doi.org/10.1002/adma.201906523">10.1002/adma.201906523</a> 75412020-02-28T09:47:00Z2026-06-18T17:54:46Z