---
_id: '7541'
abstract:
- lang: eng
  text: Semiconductor nanowires have been playing a crucial role in the development
    of nanoscale devices for the realization of spin qubits, Majorana fermions, single
    photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled
    nanowires is a prerequisite toward the next generation of devices that will require
    addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up
    self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with
    controllable position, distance, length, and structure is reported. This is achieved
    by a novel growth process that uses a SiGe strain‐relaxation template and can
    be potentially generalized to other material combinations. Transport measurements
    show an electrically tunable spin–orbit coupling, with a spin–orbit length similar
    to that of III–V materials. Also, charge sensing between quantum dots in closely
    spaced wires is observed, which underlines their potential for the realization
    of advanced quantum devices. The reported results open a path toward scalable
    qubit devices using nanowires on silicon.
acknowledged_ssus:
- _id: NanoFab
- _id: M-Shop
acknowledgement: 'This work was supported by the National Key R&D Program of China
  (Grant Nos. 2016YFA0301701 and 2016YFA0300600), the NSFC (Grant Nos. 11574356, 11434010,
  and 11404252), the Strategic Priority Research Program of CAS (Grant No. XDB30000000),
  the ERC Starting Grant No. 335497, the FWF P32235 project, and the European Union''s
  Horizon 2020 research and innovation program under Grant Agreement #862046. This
  research was supported by the Scientific Service Units of IST Austria through resources
  provided by the MIBA Machine Shop and the nanofabrication facility. F.L. thanks
  support from DOE (Grant No. DE‐FG02‐04ER46148). H.H. thanks the Startup Funding
  from Xi''an Jiaotong University.'
article_number: '1906523'
article_processing_charge: Yes (via OA deal)
article_type: original
author:
- first_name: Fei
  full_name: Gao, Fei
  last_name: Gao
- first_name: Jian-Huan
  full_name: Wang, Jian-Huan
  last_name: Wang
- first_name: Hannes
  full_name: Watzinger, Hannes
  id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
  last_name: Watzinger
- first_name: Hao
  full_name: Hu, Hao
  last_name: Hu
- first_name: Marko J.
  full_name: Rančić, Marko J.
  last_name: Rančić
- first_name: Jie-Yin
  full_name: Zhang, Jie-Yin
  last_name: Zhang
- first_name: Ting
  full_name: Wang, Ting
  last_name: Wang
- first_name: Yuan
  full_name: Yao, Yuan
  last_name: Yao
- first_name: Gui-Lei
  full_name: Wang, Gui-Lei
  last_name: Wang
- first_name: Josip
  full_name: Kukucka, Josip
  id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
  last_name: Kukucka
- first_name: Lada
  full_name: Vukušić, Lada
  id: 31E9F056-F248-11E8-B48F-1D18A9856A87
  last_name: Vukušić
  orcid: 0000-0003-2424-8636
- first_name: Christoph
  full_name: Kloeffel, Christoph
  last_name: Kloeffel
- first_name: Daniel
  full_name: Loss, Daniel
  last_name: Loss
- first_name: Feng
  full_name: Liu, Feng
  last_name: Liu
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
- first_name: Jian-Jun
  full_name: Zhang, Jian-Jun
  last_name: Zhang
citation:
  ama: Gao F, Wang J-H, Watzinger H, et al. Site-controlled uniform Ge/Si hut wires
    with electrically tunable spin-orbit coupling. <i>Advanced Materials</i>. 2020;32(16).
    doi:<a href="https://doi.org/10.1002/adma.201906523">10.1002/adma.201906523</a>
  apa: Gao, F., Wang, J.-H., Watzinger, H., Hu, H., Rančić, M. J., Zhang, J.-Y., …
    Zhang, J.-J. (2020). Site-controlled uniform Ge/Si hut wires with electrically
    tunable spin-orbit coupling. <i>Advanced Materials</i>. Wiley. <a href="https://doi.org/10.1002/adma.201906523">https://doi.org/10.1002/adma.201906523</a>
  chicago: Gao, Fei, Jian-Huan Wang, Hannes Watzinger, Hao Hu, Marko J. Rančić, Jie-Yin
    Zhang, Ting Wang, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically
    Tunable Spin-Orbit Coupling.” <i>Advanced Materials</i>. Wiley, 2020. <a href="https://doi.org/10.1002/adma.201906523">https://doi.org/10.1002/adma.201906523</a>.
  ieee: F. Gao <i>et al.</i>, “Site-controlled uniform Ge/Si hut wires with electrically
    tunable spin-orbit coupling,” <i>Advanced Materials</i>, vol. 32, no. 16. Wiley,
    2020.
  ista: Gao F, Wang J-H, Watzinger H, Hu H, Rančić MJ, Zhang J-Y, Wang T, Yao Y, Wang
    G-L, Kukucka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang J-J. 2020.
    Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling.
    Advanced Materials. 32(16), 1906523.
  mla: Gao, Fei, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically
    Tunable Spin-Orbit Coupling.” <i>Advanced Materials</i>, vol. 32, no. 16, 1906523,
    Wiley, 2020, doi:<a href="https://doi.org/10.1002/adma.201906523">10.1002/adma.201906523</a>.
  short: F. Gao, J.-H. Wang, H. Watzinger, H. Hu, M.J. Rančić, J.-Y. Zhang, T. Wang,
    Y. Yao, G.-L. Wang, J. Kukucka, L. Vukušić, C. Kloeffel, D. Loss, F. Liu, G. Katsaros,
    J.-J. Zhang, Advanced Materials 32 (2020).
corr_author: '1'
date_created: 2020-02-28T09:47:00Z
date_published: 2020-04-23T00:00:00Z
date_updated: 2026-04-08T07:27:13Z
day: '23'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.1002/adma.201906523
ec_funded: 1
external_id:
  isi:
  - '000516660900001'
  pmid:
  - '32105375'
file:
- access_level: open_access
  checksum: c622737dc295972065782558337124a2
  content_type: application/pdf
  creator: dernst
  date_created: 2020-11-20T10:11:35Z
  date_updated: 2020-11-20T10:11:35Z
  file_id: '8782'
  file_name: 2020_AdvancedMaterials_Gao.pdf
  file_size: 5242880
  relation: main_file
  success: 1
file_date_updated: 2020-11-20T10:11:35Z
has_accepted_license: '1'
intvolume: '        32'
isi: 1
issue: '16'
language:
- iso: eng
month: '04'
oa: 1
oa_version: Published Version
pmid: 1
project:
- _id: 25517E86-B435-11E9-9278-68D0E5697425
  call_identifier: FP7
  grant_number: '335497'
  name: Towards Spin qubits and Majorana fermions in Germanium self assembled hut-wires
- _id: 237B3DA4-32DE-11EA-91FC-C7463DDC885E
  call_identifier: FWF
  grant_number: P32235
  name: Towards scalable hut wire quantum devices
- _id: 237E5020-32DE-11EA-91FC-C7463DDC885E
  call_identifier: H2020
  grant_number: '862046'
  name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS
publication: Advanced Materials
publication_identifier:
  issn:
  - 0935-9648
publication_status: published
publisher: Wiley
quality_controlled: '1'
related_material:
  record:
  - id: '17444'
    relation: other
    status: public
  - id: '9222'
    relation: research_data
    status: public
  - id: '7996'
    relation: dissertation_contains
    status: public
scopus_import: '1'
status: public
title: Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit
  coupling
tmp:
  image: /images/cc_by.png
  legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
  name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
  short: CC BY (4.0)
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 32
year: '2020'
...