{"publist_id":"6857","external_id":{"isi":["000406779700031"]},"date_published":"2017-07-01T00:00:00Z","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","oa":1,"quality_controlled":"1","language":[{"iso":"eng"}],"department":[{"_id":"JoFi"}],"publication_status":"published","date_updated":"2023-09-27T12:13:36Z","publisher":"American Institute of Physics","type":"journal_article","article_number":"042603","article_processing_charge":"No","year":"2017","citation":{"ieee":"A. J. Keller, P. Dieterle, M. Fang, B. Berger, J. M. Fink, and O. Painter, “Al transmon qubits on silicon on insulator for quantum device integration,” <i>Applied Physics Letters</i>, vol. 111, no. 4. American Institute of Physics, 2017.","apa":"Keller, A. J., Dieterle, P., Fang, M., Berger, B., Fink, J. M., &#38; Painter, O. (2017). Al transmon qubits on silicon on insulator for quantum device integration. <i>Applied Physics Letters</i>. American Institute of Physics. <a href=\"https://doi.org/10.1063/1.4994661\">https://doi.org/10.1063/1.4994661</a>","mla":"Keller, Andrew J., et al. “Al Transmon Qubits on Silicon on Insulator for Quantum Device Integration.” <i>Applied Physics Letters</i>, vol. 111, no. 4, 042603, American Institute of Physics, 2017, doi:<a href=\"https://doi.org/10.1063/1.4994661\">10.1063/1.4994661</a>.","short":"A.J. Keller, P. Dieterle, M. Fang, B. Berger, J.M. Fink, O. Painter, Applied Physics Letters 111 (2017).","ista":"Keller AJ, Dieterle P, Fang M, Berger B, Fink JM, Painter O. 2017. Al transmon qubits on silicon on insulator for quantum device integration. Applied Physics Letters. 111(4), 042603.","chicago":"Keller, Andrew J, Paul Dieterle, Michael Fang, Brett Berger, Johannes M Fink, and Oskar Painter. “Al Transmon Qubits on Silicon on Insulator for Quantum Device Integration.” <i>Applied Physics Letters</i>. American Institute of Physics, 2017. <a href=\"https://doi.org/10.1063/1.4994661\">https://doi.org/10.1063/1.4994661</a>.","ama":"Keller AJ, Dieterle P, Fang M, Berger B, Fink JM, Painter O. Al transmon qubits on silicon on insulator for quantum device integration. <i>Applied Physics Letters</i>. 2017;111(4). doi:<a href=\"https://doi.org/10.1063/1.4994661\">10.1063/1.4994661</a>"},"issue":"4","date_created":"2018-12-11T11:48:33Z","author":[{"first_name":"Andrew J","last_name":"Keller","full_name":"Keller, Andrew J"},{"first_name":"Paul","full_name":"Dieterle, Paul","last_name":"Dieterle"},{"full_name":"Fang, Michael","last_name":"Fang","first_name":"Michael"},{"first_name":"Brett","last_name":"Berger","full_name":"Berger, Brett"},{"first_name":"Johannes M","orcid":"0000-0001-8112-028X","last_name":"Fink","full_name":"Fink, Johannes M","id":"4B591CBA-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Painter, Oskar","last_name":"Painter","first_name":"Oskar"}],"intvolume":"       111","scopus_import":"1","title":"Al transmon qubits on silicon on insulator for quantum device integration","day":"01","acknowledgement":"This work was supported by the AFOSR MURI Quantum Photonic Matter (Grant No. 16RT0696), the AFOSR MURI Wiring Quantum Networks with Mechanical Transducers (Grant No. FA9550-15-1-0015), the Institute for Quantum Information and Matter, an NSF Physics Frontiers Center (Grant No. PHY-1125565) with the support of the Gordon and Betty Moore Foundation, and the Kavli Nanoscience Institute at Caltech. A.J.K. acknowledges the IQIM Postdoctoral Fellowship.","main_file_link":[{"url":"https://arxiv.org/abs/1703.10195","open_access":"1"}],"isi":1,"abstract":[{"text":"We present the fabrication and characterization of an aluminum transmon qubit on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon oxide buried underneath the silicon device layer. For a 5.6 GHz qubit measured dispersively by a 7.1 GHz resonator, we find T1 = 3.5 μs and T∗2 = 2.2 μs. This process in principle permits the co-fabrication of silicon photonic and mechanical elements, providing a route towards chip-scale integration of electro-opto-mechanical transducers for quantum networking of superconducting microwave quantum circuits. The additional processing steps are compatible with established fabrication techniques for aluminum transmon qubits on silicon.","lang":"eng"}],"month":"07","publication_identifier":{"issn":["00036951"]},"doi":"10.1063/1.4994661","volume":111,"publication":"Applied Physics Letters","_id":"796","oa_version":"Submitted Version","status":"public"}