article published yes Nara Lee author Eunjung Ko author Hwan Young Choi author Yun Jeong Hong author Muhammad Nauman author 32c21954-2022-11eb-9d5f-af9f93c24e710000-0002-2111-4846 Woun Kang author Hyoung Joon Choi author Young Jai Choi author Younjung Jo author The novel electronic state of the canted antiferromagnetic (AFM) insulator, strontium iridate (Sr2IrO4) has been well described by the spin-orbit-entangled isospin Jeff = 1/2, but the role of isospin in transport phenomena remains poorly understood. In this study, antiferromagnet-based spintronic functionality is demonstrated by combining unique characteristics of the isospin state in Sr2IrO4. Based on magnetic and transport measurements, large and highly anisotropic magnetoresistance (AMR) is obtained by manipulating the antiferromagnetic isospin domains. First-principles calculations suggest that electrons whose isospin directions are strongly coupled to in-plane net magnetic moment encounter the isospin mismatch when moving across antiferromagnetic domain boundaries, which generates a high resistance state. By rotating a magnetic field that aligns in-plane net moments and removes domain boundaries, the macroscopically-ordered isospins govern dynamic transport through the system, which leads to the extremely angle-sensitive AMR. As with this work that establishes a link between isospins and magnetotransport in strongly spin-orbit-coupled AFM Sr2IrO4, the peculiar AMR effect provides a beneficial foundation for fundamental and applied research on AFM spintronics. Wiley2018 eng Mechanical EngineeringGeneral Materials ScienceMechanics of Materials 0935-9648 1521-4095 1811.0456210.1002/adma.201805564 3052 yes Lee N, Ko E, Choi HY, et al. Antiferromagnet‐based spintronic functionality by controlling isospin domains in a layered perovskite iridate. <i>Advanced Materials</i>. 2018;30(52). doi:<a href="https://doi.org/10.1002/adma.201805564">10.1002/adma.201805564</a> Lee, N., Ko, E., Choi, H. Y., Hong, Y. J., Nauman, M., Kang, W., … Jo, Y. (2018). Antiferromagnet‐based spintronic functionality by controlling isospin domains in a layered perovskite iridate. <i>Advanced Materials</i>. Wiley. <a href="https://doi.org/10.1002/adma.201805564">https://doi.org/10.1002/adma.201805564</a> N. Lee <i>et al.</i>, “Antiferromagnet‐based spintronic functionality by controlling isospin domains in a layered perovskite iridate,” <i>Advanced Materials</i>, vol. 30, no. 52. Wiley, 2018. Lee, Nara, et al. “Antiferromagnet‐based Spintronic Functionality by Controlling Isospin Domains in a Layered Perovskite Iridate.” <i>Advanced Materials</i>, vol. 30, no. 52, 1805564, Wiley, 2018, doi:<a href="https://doi.org/10.1002/adma.201805564">10.1002/adma.201805564</a>. N. Lee, E. Ko, H.Y. Choi, Y.J. Hong, M. Nauman, W. Kang, H.J. Choi, Y.J. Choi, Y. Jo, Advanced Materials 30 (2018). Lee N, Ko E, Choi HY, Hong YJ, Nauman M, Kang W, Choi HJ, Choi YJ, Jo Y. 2018. Antiferromagnet‐based spintronic functionality by controlling isospin domains in a layered perovskite iridate. Advanced Materials. 30(52), 1805564. Lee, Nara, Eunjung Ko, Hwan Young Choi, Yun Jeong Hong, Muhammad Nauman, Woun Kang, Hyoung Joon Choi, Young Jai Choi, and Younjung Jo. “Antiferromagnet‐based Spintronic Functionality by Controlling Isospin Domains in a Layered Perovskite Iridate.” <i>Advanced Materials</i>. Wiley, 2018. <a href="https://doi.org/10.1002/adma.201805564">https://doi.org/10.1002/adma.201805564</a>. 90662021-02-02T15:50:58Z2021-02-03T13:58:39Z