---
_id: '9068'
abstract:
- lang: eng
  text: We report the temperature-dependent resistivity ρ(T) of chalcogenide NiS2-xSex
    (x = 0.1) using hydrostatic pressure as a control parameter in the temperature
    range of 4–300 K. The insulating behavior of ρ(T) survives at low temperatures
    in the pressure regime below 7.5 kbar, whereas a clear insulator-to-metallic transition
    is observed above 7.5 kbar. Two types of magnetic transitions, from the paramagnetic
    (PM) to the antiferromagnetic (AFM) state and from the AFM state to the weak ferromagnetic
    (WF) state, were evaluated and confirmed by magnetization measurement. According
    to the temperature–pressure phase diagram, the WF phase survives up to 7.5 kbar,
    and the transition temperature of the WF transition decreases as the pressure
    increases, whereas the metal–insulator transition temperature increases up to
    9.4 kbar. We analyzed the metallic behavior and proposed Fermi-liquid behavior
    of NiS1.9Se0.1.
article_processing_charge: No
article_type: original
author:
- first_name: Tayyaba
  full_name: Hussain, Tayyaba
  last_name: Hussain
- first_name: Myeong-jun
  full_name: Oh, Myeong-jun
  last_name: Oh
- first_name: Muhammad
  full_name: Nauman, Muhammad
  id: 32c21954-2022-11eb-9d5f-af9f93c24e71
  last_name: Nauman
  orcid: 0000-0002-2111-4846
- first_name: Younjung
  full_name: Jo, Younjung
  last_name: Jo
- first_name: Garam
  full_name: Han, Garam
  last_name: Han
- first_name: Changyoung
  full_name: Kim, Changyoung
  last_name: Kim
- first_name: Woun
  full_name: Kang, Woun
  last_name: Kang
citation:
  ama: 'Hussain T, Oh M, Nauman M, et al. Pressure-induced metal–insulator transitions
    in chalcogenide NiS2-Se. <i>Physica B: Condensed Matter</i>. 2018;536:235-238.
    doi:<a href="https://doi.org/10.1016/j.physb.2017.11.032">10.1016/j.physb.2017.11.032</a>'
  apa: 'Hussain, T., Oh, M., Nauman, M., Jo, Y., Han, G., Kim, C., &#38; Kang, W.
    (2018). Pressure-induced metal–insulator transitions in chalcogenide NiS2-Se.
    <i>Physica B: Condensed Matter</i>. Elsevier. <a href="https://doi.org/10.1016/j.physb.2017.11.032">https://doi.org/10.1016/j.physb.2017.11.032</a>'
  chicago: 'Hussain, Tayyaba, Myeong-jun Oh, Muhammad Nauman, Younjung Jo, Garam Han,
    Changyoung Kim, and Woun Kang. “Pressure-Induced Metal–Insulator Transitions in
    Chalcogenide NiS2-Se.” <i>Physica B: Condensed Matter</i>. Elsevier, 2018. <a
    href="https://doi.org/10.1016/j.physb.2017.11.032">https://doi.org/10.1016/j.physb.2017.11.032</a>.'
  ieee: 'T. Hussain <i>et al.</i>, “Pressure-induced metal–insulator transitions in
    chalcogenide NiS2-Se,” <i>Physica B: Condensed Matter</i>, vol. 536. Elsevier,
    pp. 235–238, 2018.'
  ista: 'Hussain T, Oh M, Nauman M, Jo Y, Han G, Kim C, Kang W. 2018. Pressure-induced
    metal–insulator transitions in chalcogenide NiS2-Se. Physica B: Condensed Matter.
    536, 235–238.'
  mla: 'Hussain, Tayyaba, et al. “Pressure-Induced Metal–Insulator Transitions in
    Chalcogenide NiS2-Se.” <i>Physica B: Condensed Matter</i>, vol. 536, Elsevier,
    2018, pp. 235–38, doi:<a href="https://doi.org/10.1016/j.physb.2017.11.032">10.1016/j.physb.2017.11.032</a>.'
  short: 'T. Hussain, M. Oh, M. Nauman, Y. Jo, G. Han, C. Kim, W. Kang, Physica B:
    Condensed Matter 536 (2018) 235–238.'
date_created: 2021-02-02T15:52:43Z
date_published: 2018-05-01T00:00:00Z
date_updated: 2021-02-04T07:18:57Z
day: '01'
doi: 10.1016/j.physb.2017.11.032
extern: '1'
intvolume: '       536'
language:
- iso: eng
month: '05'
oa_version: None
page: 235-238
publication: 'Physica B: Condensed Matter'
publication_identifier:
  issn:
  - 0921-4526
publication_status: published
publisher: Elsevier
quality_controlled: '1'
status: public
title: Pressure-induced metal–insulator transitions in chalcogenide NiS2-Se
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 536
year: '2018'
...