--- res: bibo_abstract: - SnSe, a wide-bandgap semiconductor, has attracted significant attention from the thermoelectric (TE) community due to its outstanding TE performance deriving from the ultralow thermal conductivity and advantageous electronic structures. Here, we promoted the TE performance of n-type SnSe polycrystals through bandgap engineering and vacancy compensation. We found that PbTe can significantly reduce the wide bandgap of SnSe to reduce the impurity transition energy, largely enhancing the carrier concentration. Also, PbTe-induced crystal symmetry promotion increases the carrier mobility, preserving large Seebeck coefficient. Consequently, a maximum ZT of ∼1.4 at 793 K is obtained in Br doped SnSe–13%PbTe. Furthermore, we found that extra Sn in n-type SnSe can compensate for the intrinsic Sn vacancies and form electron donor-like metallic Sn nanophases. The Sn nanophases near the grain boundary could also reduce the intergrain energy barrier which largely enhances the carrier mobility. As a result, a maximum ZT value of ∼1.7 at 793 K and an average ZT (ZTave) of ∼0.58 in 300–793 K are achieved in Br doped Sn1.08Se–13%PbTe. Our findings provide a novel strategy to promote the TE performance in wide-bandgap semiconductors.@eng bibo_authorlist: - foaf_Person: foaf_givenName: Lizhong foaf_name: Su, Lizhong foaf_surname: Su - foaf_Person: foaf_givenName: Tao foaf_name: Hong, Tao foaf_surname: Hong - foaf_Person: foaf_givenName: Dongyang foaf_name: Wang, Dongyang foaf_surname: Wang - foaf_Person: foaf_givenName: Sining foaf_name: Wang, Sining foaf_surname: Wang - foaf_Person: foaf_givenName: Bingchao foaf_name: Qin, Bingchao foaf_surname: Qin - foaf_Person: foaf_givenName: Mengmeng foaf_name: Zhang, Mengmeng foaf_surname: Zhang - foaf_Person: foaf_givenName: Xiang foaf_name: Gao, Xiang foaf_surname: Gao - foaf_Person: foaf_givenName: Cheng foaf_name: Chang, Cheng foaf_surname: Chang foaf_workInfoHomepage: http://www.librecat.org/personId=9E331C2E-9F27-11E9-AE48-5033E6697425 orcid: 0000-0002-9515-4277 - foaf_Person: foaf_givenName: Li Dong foaf_name: Zhao, Li Dong foaf_surname: Zhao bibo_doi: 10.1016/j.mtphys.2021.100452 bibo_volume: 20 dct_date: 2021^xs_gYear dct_identifier: - UT:000703159600010 dct_isPartOf: - http://id.crossref.org/issn/2542-5293 dct_language: eng dct_publisher: Elsevier@ dct_title: Realizing high doping efficiency and thermoelectric performance in n-type SnSe polycrystals via bandgap engineering and vacancy compensation@ ...