---
res:
bibo_abstract:
- 'Recently a new high-mobility Dirac material, trilayer graphene, was realized
experimentally. The band structure of ABA-stacked trilayer graphene consists of
a monolayer-like and a bilayer-like pair of bands. Here we study electronic properties
of ABA-stacked trilayer graphene biased by a perpendicular electric field. We
find that the combination of the bias and trigonal warping gives rise to a set
of new Dirac points: In each valley, seven species of Dirac fermions with small
masses of order of a few meV emerge. The positions and masses of the emergent
Dirac fermions are tunable by bias, and one group of Dirac fermions becomes massless
at a certain bias value. Therefore, in contrast to bilayer graphene, the conductivity
at the neutrality point is expected to show nonmonotonic behavior, becoming of
the order of a few e2/h when some Dirac masses vanish. Further, we analyze the
evolution of the Landau level spectrum as a function of bias. The emergence of
new Dirac points in the band structure translates into new threefold-degenerate
groups of Landau levels. This leads to an anomalous quantum Hall effect, in which
some quantum Hall steps have a height of 3e2/h. At an intermediate bias, the degeneracies
of all Landau levels get lifted, and in this regime all quantum Hall plateaus
are spaced by e2/h. Finally, we show that the pattern of Landau level crossings
is very sensitive to certain band structure parameters, and can therefore provide
a useful tool for determining their precise values.@eng'
bibo_authorlist:
- foaf_Person:
foaf_givenName: Maksym
foaf_name: Maksym Serbyn
foaf_surname: Serbyn
foaf_workInfoHomepage: http://www.librecat.org/personId=47809E7E-F248-11E8-B48F-1D18A9856A87
orcid: 0000-0002-2399-5827
- foaf_Person:
foaf_givenName: Dmitry
foaf_name: Abanin, Dmitry A
foaf_surname: Abanin
bibo_doi: 10.1103/PhysRevB.87.115422
bibo_issue: '11'
bibo_volume: 87
dct_date: 2013^xs_gYear
dct_publisher: American Physical Society@
dct_title: New Dirac points and multiple Landau level crossings in biased trilayer
graphene@
...