{"volume":14,"external_id":{"arxiv":["1403.2093"]},"quality_controlled":"1","day":"05","abstract":[{"lang":"eng","text":"Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2* ∼ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing."}],"status":"public","date_updated":"2021-01-12T08:22:24Z","intvolume":" 14","main_file_link":[{"url":"https://arxiv.org/abs/1403.2093","open_access":"1"}],"extern":"1","acknowledgement":"Funding from the Department of Energy, Office of Science & SCGF, the EC FP7-ICT project SiSPIN no. 323841, and the Danish National Research Foundation is acknowledged.","publication_status":"published","oa":1,"publisher":"American Chemical Society","citation":{"mla":"Higginbotham, Andrew P., et al. “Hole Spin Coherence in a Ge/Si Heterostructure Nanowire.” Nano Letters, vol. 14, no. 6, American Chemical Society, 2014, pp. 3582–86, doi:10.1021/nl501242b.","chicago":"Higginbotham, Andrew P, Thorvald Larsen, Jun Yao, Hao Yan, Charles Lieber, Charles Marcus, and Ferdinand Kuemmeth. “Hole Spin Coherence in a Ge/Si Heterostructure Nanowire.” Nano Letters. American Chemical Society, 2014. https://doi.org/10.1021/nl501242b.","ieee":"A. P. Higginbotham et al., “Hole spin coherence in a Ge/Si heterostructure nanowire,” Nano Letters, vol. 14, no. 6. American Chemical Society, pp. 3582–3586, 2014.","ama":"Higginbotham AP, Larsen T, Yao J, et al. Hole spin coherence in a Ge/Si heterostructure nanowire. Nano Letters. 2014;14(6):3582-3586. doi:10.1021/nl501242b","ista":"Higginbotham AP, Larsen T, Yao J, Yan H, Lieber C, Marcus C, Kuemmeth F. 2014. Hole spin coherence in a Ge/Si heterostructure nanowire. Nano Letters. 14(6), 3582–3586.","apa":"Higginbotham, A. P., Larsen, T., Yao, J., Yan, H., Lieber, C., Marcus, C., & Kuemmeth, F. (2014). Hole spin coherence in a Ge/Si heterostructure nanowire. Nano Letters. American Chemical Society. https://doi.org/10.1021/nl501242b","short":"A.P. Higginbotham, T. Larsen, J. Yao, H. Yan, C. Lieber, C. Marcus, F. Kuemmeth, Nano Letters 14 (2014) 3582–3586."},"type":"journal_article","oa_version":"Preprint","issue":"6","month":"05","title":"Hole spin coherence in a Ge/Si heterostructure nanowire","doi":"10.1021/nl501242b","_id":"98","date_published":"2014-05-05T00:00:00Z","year":"2014","date_created":"2018-12-11T11:44:37Z","publication":"Nano Letters","page":"3582 - 3586","user_id":"3E5EF7F0-F248-11E8-B48F-1D18A9856A87","author":[{"first_name":"Andrew P","orcid":"0000-0003-2607-2363","full_name":"Higginbotham, Andrew P","id":"4AD6785A-F248-11E8-B48F-1D18A9856A87","last_name":"Higginbotham"},{"full_name":"Larsen, Thorvald","first_name":"Thorvald","last_name":"Larsen"},{"last_name":"Yao","first_name":"Jun","full_name":"Yao, Jun"},{"first_name":"Hao","full_name":"Yan, Hao","last_name":"Yan"},{"last_name":"Lieber","full_name":"Lieber, Charles","first_name":"Charles"},{"first_name":"Charles","full_name":"Marcus, Charles","last_name":"Marcus"},{"last_name":"Kuemmeth","full_name":"Kuemmeth, Ferdinand","first_name":"Ferdinand"}],"publist_id":"7956","language":[{"iso":"eng"}]}