{"language":[{"iso":"eng"}],"issue":"6","doi":"10.1021/nl501242b","date_created":"2018-12-11T11:44:37Z","date_published":"2014-05-05T00:00:00Z","day":"05","publication_status":"published","page":"3582 - 3586","oa_version":"Preprint","volume":14,"type":"journal_article","year":"2014","date_updated":"2021-01-12T08:22:24Z","user_id":"3E5EF7F0-F248-11E8-B48F-1D18A9856A87","_id":"98","status":"public","title":"Hole spin coherence in a Ge/Si heterostructure nanowire","external_id":{"arxiv":["1403.2093"]},"citation":{"ama":"Higginbotham AP, Larsen T, Yao J, et al. Hole spin coherence in a Ge/Si heterostructure nanowire. <i>Nano Letters</i>. 2014;14(6):3582-3586. doi:<a href=\"https://doi.org/10.1021/nl501242b\">10.1021/nl501242b</a>","short":"A.P. Higginbotham, T. Larsen, J. Yao, H. Yan, C. Lieber, C. Marcus, F. Kuemmeth, Nano Letters 14 (2014) 3582–3586.","ista":"Higginbotham AP, Larsen T, Yao J, Yan H, Lieber C, Marcus C, Kuemmeth F. 2014. Hole spin coherence in a Ge/Si heterostructure nanowire. Nano Letters. 14(6), 3582–3586.","chicago":"Higginbotham, Andrew P, Thorvald Larsen, Jun Yao, Hao Yan, Charles Lieber, Charles Marcus, and Ferdinand Kuemmeth. “Hole Spin Coherence in a Ge/Si Heterostructure Nanowire.” <i>Nano Letters</i>. American Chemical Society, 2014. <a href=\"https://doi.org/10.1021/nl501242b\">https://doi.org/10.1021/nl501242b</a>.","apa":"Higginbotham, A. P., Larsen, T., Yao, J., Yan, H., Lieber, C., Marcus, C., &#38; Kuemmeth, F. (2014). Hole spin coherence in a Ge/Si heterostructure nanowire. <i>Nano Letters</i>. American Chemical Society. <a href=\"https://doi.org/10.1021/nl501242b\">https://doi.org/10.1021/nl501242b</a>","mla":"Higginbotham, Andrew P., et al. “Hole Spin Coherence in a Ge/Si Heterostructure Nanowire.” <i>Nano Letters</i>, vol. 14, no. 6, American Chemical Society, 2014, pp. 3582–86, doi:<a href=\"https://doi.org/10.1021/nl501242b\">10.1021/nl501242b</a>.","ieee":"A. P. Higginbotham <i>et al.</i>, “Hole spin coherence in a Ge/Si heterostructure nanowire,” <i>Nano Letters</i>, vol. 14, no. 6. American Chemical Society, pp. 3582–3586, 2014."},"oa":1,"extern":"1","abstract":[{"text":"Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2* ∼ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.","lang":"eng"}],"main_file_link":[{"url":"https://arxiv.org/abs/1403.2093","open_access":"1"}],"author":[{"last_name":"Higginbotham","orcid":"0000-0003-2607-2363","first_name":"Andrew P","id":"4AD6785A-F248-11E8-B48F-1D18A9856A87","full_name":"Higginbotham, Andrew P"},{"full_name":"Larsen, Thorvald","last_name":"Larsen","first_name":"Thorvald"},{"first_name":"Jun","last_name":"Yao","full_name":"Yao, Jun"},{"full_name":"Yan, Hao","first_name":"Hao","last_name":"Yan"},{"full_name":"Lieber, Charles","first_name":"Charles","last_name":"Lieber"},{"first_name":"Charles","last_name":"Marcus","full_name":"Marcus, Charles"},{"full_name":"Kuemmeth, Ferdinand","first_name":"Ferdinand","last_name":"Kuemmeth"}],"publisher":"American Chemical Society","publist_id":"7956","month":"05","acknowledgement":"Funding from the Department of Energy, Office of Science & SCGF, the EC FP7-ICT project SiSPIN no. 323841, and the Danish National Research Foundation is acknowledged.","intvolume":"        14","publication":"Nano Letters","quality_controlled":"1"}