Hole spin coherence in a Ge/Si heterostructure nanowire

article Hole spin coherence in a Ge/Si heterostructure nanowire published yes Andrew P Higginbotham author 4AD6785A-F248-11E8-B48F-1D18A9856A870000-0003-2607-2363 Thorvald Larsen author Jun Yao author Hao Yan author Charles Lieber author Charles Marcus author Ferdinand Kuemmeth author Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2* ∼ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing. American Chemical Society2014 eng Nano Letters 1403.209310.1021/nl501242b 1463582 - 3586 yes Higginbotham, A. P., Larsen, T., Yao, J., Yan, H., Lieber, C., Marcus, C., & Kuemmeth, F. (2014). Hole spin coherence in a Ge/Si heterostructure nanowire. Nano Letters. American Chemical Society. <a href="https://doi.org/10.1021/nl501242b">https://doi.org/10.1021/nl501242b</a> Higginbotham, Andrew P, Thorvald Larsen, Jun Yao, Hao Yan, Charles Lieber, Charles Marcus, and Ferdinand Kuemmeth. “Hole Spin Coherence in a Ge/Si Heterostructure Nanowire.” Nano Letters. American Chemical Society, 2014. <a href="https://doi.org/10.1021/nl501242b">https://doi.org/10.1021/nl501242b</a>. Higginbotham AP, Larsen T, Yao J, Yan H, Lieber C, Marcus C, Kuemmeth F. 2014. Hole spin coherence in a Ge/Si heterostructure nanowire. Nano Letters. 14(6), 3582–3586. A. P. Higginbotham et al., “Hole spin coherence in a Ge/Si heterostructure nanowire,” Nano Letters, vol. 14, no. 6. American Chemical Society, pp. 3582–3586, 2014. Higginbotham, Andrew P., et al. “Hole Spin Coherence in a Ge/Si Heterostructure Nanowire.” Nano Letters, vol. 14, no. 6, American Chemical Society, 2014, pp. 3582–86, doi:<a href="https://doi.org/10.1021/nl501242b">10.1021/nl501242b</a>. A.P. Higginbotham, T. Larsen, J. Yao, H. Yan, C. Lieber, C. Marcus, F. Kuemmeth, Nano Letters 14 (2014) 3582–3586. Higginbotham AP, Larsen T, Yao J, et al. Hole spin coherence in a Ge/Si heterostructure nanowire. Nano Letters. 2014;14(6):3582-3586. doi:<a href="https://doi.org/10.1021/nl501242b">10.1021/nl501242b</a> 982018-12-11T11:44:37Z2021-01-12T08:22:24Z